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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
SN75424N Texas Instruments 0.5A, 100V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR, PLASTIC, DIP-18 visit Texas Instruments
PMP4677 Texas Instruments low pwr boost w/ cassoded NPN visit Texas Instruments
ULN2004AIDE4 Texas Instruments 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, MS-012AC, GREEN, PLASTIC, SOIC-16 visit Texas Instruments
ULN2004AIDRE4 Texas Instruments 0.5A, 50V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR, MS-012AC, GREEN, PLASTIC, SOIC-16 visit Texas Instruments

RF NPN POWER TRANSISTOR 1000 WATT

Catalog Datasheet MFG & Type PDF Document Tags

rohm mtbf

Abstract: CAPACITOR chip murata mtbf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15030 Motorola Preferred Device NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common , , Emitter Ballasted for Long Life and Resistance to Metal Migration 30 W, 1.5 GHz RF POWER TRANSISTOR NPN , Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x , Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP
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rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 GX-0300-55-22

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Phoenix, AZ. MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON · · · · · · · CASE 395C , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed , Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola , R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola , Volts, 1490 MHz, Class AB Characteristics: Output Power - 30 Watts Gain - 9 dB Min
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capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ bd136 equivalent 1000 watt Motorola power supply 100 watt transistor

CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , ) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN , Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt, Chip Resistor Rohm 500 , 1 , POWER (WATTS) 10.3 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL
Motorola
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CAPACITOR chip mtbf IrL 1540 N RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 electrolytic capacitor MURATA ERIE CAPACITOR MRF15030/D

178 09T

Abstract: 1000 watt Motorola power supply :1 Load VSWR @ 28 Vdc, at Rated Output Power 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON · Gold , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed , , Industrial Devices 3 Turn, 20 AWG, 0.126" ID Choke Type N Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x 330 £2,1/8 Watt Chip , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Si, 1/8 Watt
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178 09T transistor MTBF Mallory Capacitor Mallory surface mount Capacitor
Abstract: NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave largeâ'"signal, common , ) Intermodulation Distortion â'" â'"30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Transistor, NPN, Motorola (MJD47) 2 x 330 â"¦, 1/8 Watt Chip Resistors in Parallel, Rohm 100 â"¦, 1/8 Watt , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 â"¦, 1/8 Watt , 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 5th â Motorola
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bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Mount RF 55-22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar , RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power - 60 Watts , Designed for FM, TDMA, CDMA and Multi-Carrier Applications MRF20060 MRF20060S 60 W, 2000 MHz RF POWER , dB IRL 12 19 dB ¥ No Degradation in Output Power MOTOROLA RF DEVICE DATA
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motorola rf power transistors mtbf mallory trimmer CHIP - X 0934 2779, transistor transistor bd135 transistor APPLICATIONS Hf 12 v 150 watt IS22I

bd135 equivalent

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power - 60 Watts , for FM, TDMA, CDMA and Multi-Carrier Applications M RF20060 M RF20060S 60 W, 2000 MHz RF POWER , , Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon®, Arlon GX , , Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 270 Q, Chip Resistor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar
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bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ mrf2006 Arlon mallory 170

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR MAXIMUM RATINGS Rating , Flange Mount RF 55-22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP , Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband , modulated and multi-carrier base station RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz , No Degradation in Output Power MRF20060 MRF20060S 2 MOTOROLA RF DEVICE DATA B1 C1 C2, C4
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FL 032 PIF pl 032 pif MRF20060/D

t 3866 power transistor

Abstract: t 3866 transistor POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45 , : Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver , 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS FUNCTIONAL Symbol Test , RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND
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t 3866 power transistor t 3866 transistor t 3866 TRANSISTOR D 471 C 3866 3866A 672-557T

RF 2N3866

Abstract: Transistor 2N3866 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 , -8 POWER MACRO MRF555 NPN 470 Type Device Packag Device GPE VCC 18 1000 MACRO T , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF
Microsemi
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2N4427 MRF4427 RF 2N3866 Transistor 2N3866 RF NPN POWER TRANSISTOR 1000 WATT npn UHF transistor 2N3866 equivalent UHF power TRANSISTOR PNP TO-39 MSC1067 BFR91 MRF914 MRF581 MRF586 MRF951

2N3866

Abstract: Transistor 2N3866 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400 POWER MACRO , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , 900 1 12 50 POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
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low cost BFR90 transistor 2N3866 application note data 2n3866 BFR91 parameter S 2N3866/2N3866A MRF555T MRF559 MRF8372 MRF557 MRF557T

2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND
Advanced Power Technology
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for transistor bfr96 npn power amplifier circuit 2N5179 2N6255 MRF607 BFR90 MRF545 MRF544 MRF5812

2N3866

Abstract: mrf571 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum , . Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications , RFC 0.9-7 3-35 12 RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER , capacitors are air variable 059-7001 Rev - 9-2002 2N3866 / 2N3866A RF Low Power PA, LNA, and
Advanced Power Technology
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mrf571 MRF5943 MRF571

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: TRANSISTOR 12 GHZ 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To , (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , -30 -35 -46 -76 -94 -115 -145 176 140 122 053-7004 Rev - 9-2002 2N5109 RF Low Power PA, LNA , MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN 512 512 400 400 470 470 0.5 0.5 1 1 , 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER
Advanced Power Technology
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TRANSISTOR 12 GHZ

2n4427 MOTOROLA

Abstract: motorola 2N4427 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector , Type SO-8 TO-39 Package GPE Freq (MHz) RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 1300 3.5 11.4 1000 20 400 30 400 30 400 POWER MACRO MRF553 NPN 175 , DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier
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MSC1301 2n4427 MOTOROLA motorola 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 BFR96 LOW POWER TRANSISTOR

MM8009

Abstract: 1031W MM8009 (silicon) NPN SILICON RF POWER TRANSISTOR . designed for amplifier, frequency , '¢ High Output Power - Pout = 0.9 Watt (Min) @ f = 1.0 GHz â'¢ High Current-Gain-Bandwidth Product - fy - 1000 MHz (Min) @ lc = 50 mAdc â'¢ Ideal for Radio Sonde Applications â'" Pout (Oscillator) = 300 mW (Typ) @ f = 1.68 GHz NPN SILICON RF POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit , 28 Vdc, f - 1.0 GHz) pout 0 s â'" Watt Power Output (Oscillator) (Figure 2) (VcE - 20 Vdc, VEB =
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MM8010 MM8011 MM8008 1031W 38-to-38

RF 2N3866

Abstract: 2N3866 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 1300 3.5 11.4 1000 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF , SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN
Microsemi
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MRF581A BFY90

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , . Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: Silicon NPN transistor , POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500 SO-8 MRF5943, R1, R2 , 1.5 6 17 900 1 12 50 POWER MACRO MRF553T NPN 175 1.5 11.5 50 , 50 12.5 18 1000 TO-72 11 TO-72 2N5179 NPN 200 6 12 50 MA C R O X
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MSC1304 RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 transistor 2N4427 transistor NPN 30 watt RF NPN POWER TRANSISTOR 2.5 GHZ MRF904

pepi c

Abstract: TRANSISTOR D 2627 ´ I T-33-cR MOTb MRF427 MRF427A The RF Line NPN SILICON RF POWER TRANSISTOR . . . designed , % Tested for Load Mismatch at all Phase Angles with 30:1 VSWR 25 W (PEP)-30 MHz RF POWER TRANSISTOR NPN , marine and base station equipment. â'¢ Specified 50 Volt, 30 MHz Characteristics - Output Power = 25 W , 0.177 T 211 2.54 0.083 0.100 U 2.49 3.35 0.098 0.132 CASE 145A-10 MOTOROLA RF DEVICE DATA 2-624 , Common-Emitter Amplifier Power Gain (VCC - 50 Vdc. Poui = 25 WIPEP), f = 30 MHz) Gpe IS 20 - dB Intermodulation
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pepi c TRANSISTOR D 2627 pepi cr transistor D 2624 arco 469 trimmer capacitor pepi T-33- T-33-09

2N5109

Abstract: transistor 2N5109 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , . Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: Silicon NPN transistor , .PDF 3-10-99 2N5109 10 15 12 1200 3.4 30 15 11.4 1000 30 400 POWER , 17 900 1 12 50 POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 , 18 1000 TO-72 11 TO-72 2N5179 NPN 200 6 12 50 MA C R O X MRF559
Microsemi
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transistor 2N5109 2n5109 transistor
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