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LTC3444EDD#PBF Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3444EDD#TRPBF Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3444EDD Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3444EDD#TR Linear Technology LTC3444 - Micropower Synchronous Buck-Boost DC/DC Converter for WCDMA Applications; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6362CDD#PBF-ES Linear Technology LTC6362 - Precision, Low Power Rail-to-Rail Input/Output Differential Op Amp/SAR ADC Driver; Package: DFN; Pins: 8; Temperature: C visit Linear Technology - Now Part of Analog Devices
LTC5544IUF#PBF Linear Technology LTC5544 - 4GHz to 6GHz High Dynamic Range Downconverting Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

RF MMIC MARK CODE AS

Catalog Datasheet MFG & Type PDF Document Tags

MGF 1200

Abstract: mitsubishi mgf RF OUT (Po) & Vd2 7 GND 8 GND Case:GND 4.1 2 - (0.1) 8 - (4.9) Note1 : 1 pin mark Note2 , MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , Amplifier External matching circuit is required Vd1 GND Ext Po / Vd2 Vg Pi : RF input Po : RF output Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg : Gate bias(positive bias) GND , designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use
Mitsubishi
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MGF 1200 mitsubishi mgf 715GH

1715G

Abstract: 17-15G IN (Pi) GND Vd1 Ext Vg RF OUT (Po) & Vd2 GND GND Case:GND Notel : 1 pin mark Note2 : The values , MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change , matching circuit is required Pi Po Vd1 Vd2 APPLICATION 1 ,9G H z band handheld phone RF input RF , measures such as (i) placem ent of substitutive, auxiliary, circuits, (ii) use of non-flammable material or , ) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND G aAs POWER AMPLIFIER
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OCR Scan
1715G 17-15G MGF7170A
Abstract: Functional Block Diagram Vcc(10) RF Input (2) Input Match DA Inter Stage Match PA Output Match RF Output (8) Bias Circuit & Control Logic Vbias(1) MMIC MODULE Vcont(4) 2 Vref(5) WM , ) The WS2512, a Wide-band Code Division Multiple Access(WCDMA) Power Amplifier (PA), is a fully matched , Transistor) MMIC (Microwave Monolithic Integrated Circuit) technology offering state-of-the-art reliability , (1920-1980MHz) Table 1. Absolute Maximum Ratings Parameter RF Input Power DC Supply Voltage DC Reference WAVICS
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UMTS2100 1920-1980MH WM-0409-05

TRANSISTOR WM 9

Abstract: TRANSISTOR SMD MARKING CODE WM handset Functional Block Diagram Vcc(10) RF Input (2) Input Match DA Inter Stage Match PA Output Match RF Output (8) Bias Circuit & Control Logic Vbias(1) MMIC MODULE Vcont(4) 2 , ) The WS2411, a Wide-band Code Division Multiple Access(WCDMA) Power Amplifier (PA), is a fully matched , Bipolar Transistor) MMIC (Microwave Monolithic Integrated Circuit) technology offering state-of-the-art , Module for UMTS1900 (1850-1910MHz) Table 1. Absolute Maximum Ratings Parameter RF Input Power DC
WAVICS
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TRANSISTOR WM 9 TRANSISTOR SMD MARKING CODE WM smd electrolytic capacitors marking 1850-1910MH WM-0409-06

UMTS800

Abstract: Diagram Vcc1(1) Vcc2(10) RF Input (2) Input Match DA Inter Stage Match PA Output Match RF Output (8) Bias Circuit & Control Logic MMIC MODULE Vcont(4) 2 Vref(5) WM , WS2111, a Wide-band Code Division Multiple Access(WCDMA) Power Amplifier (PA), is a fully matched 10 , range. The WS2111 is manufactured on an advanced InGaP HBT (Hetero-junction Bipolar Transistor) MMIC , (824-849MHz) Table 1. Absolute Maximum Ratings Parameter RF Input Power DC Supply Voltage DC Reference
WAVICS
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UMTS800 824-849MH WM-0409-07

MGF 1200

Abstract: mitsubishi mgf ) 4.1 1 Vd1 4 MC 5 Vg2 6 RF OUT (Po) & Vd2 7 GND 8 GND Case:GND Note1 : 1 pin mark Note2 , MITSUBISHI SEMICONDUCTOR MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER , Vd1 GND MC Vd2 / Po Vg2 : RF input Pi : RF output Po Vd1 : Drain bias 1 Vd2 : Drain , safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive , mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR
Mitsubishi
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RF MMIC MARK CODE AS 2SP53 mitsubishi microwave HPA 1200 RF MMIC MARK CODE -03 7169C

Hitachi DSA0015

Abstract: HA22040 =-30dBm,fLo=1.619GHz, PLo=-12dBm 2 HA22040 Pin Arrangement 1 Mark type : GH Yearly code : a to d Monthly code : e to h 6 f 2 g h GH e 3 a b 5 c d 4 Top View Yearly code Year a Monthly code Mark b c 1999 2000 2001 2002 d Month e , HA22040 GaAs MMIC Down Converter for Micro Wave Application ADE-207-318(Z) 1st. Edition , is requested. CAUTION This product ues GaAs. Since dust or fume of As,which is a component of
Hitachi Semiconductor
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Hitachi DSA0015 hitachi a january b february 1489MH 1619MH 130MH D-85622
Abstract: MITSUBISHI SEMICONDUCTOR MGF7170AC Technical Note UHF BAND GaAs POWER , External m atching circuit is required G ND Po / Vd2 Pi : RF input Po : RF output Vd1 : Drain , give due consideration to safety when making your circuit designs, with appropriate measures such as , SEMICONDUCTOR MGF7170AC Preliminary information UHF BAND GaAs POWER AMPLIFIER ABSOLUTE , am age No oscillation S purious level < -6 0 d B c *C D M A is code division m ultiple A ccess -
OCR Scan
F7170A

WS1111

Abstract: J-STD-020A ) Bias Circuit & Control Logic RF Input (4) Input Match DA Inter Stage Match PA Output Match MMIC RF Output (8) MODULE 2 Vcc1(5) Vcc2(6) Preliminary Information , (824-849MHz) The WS1111 is a CDMA(Code Division Multiple Access) and AMPS(Advanced Mobile Phone Service , manufactured on an advanced InGaP HBT(Hetero-junction Bipolar Transistor) MMIC(Microwave Monolithic Integrated , ) Table 1. Absolute Maximum Ratings*1 Parameter Symbol Minimum Nominal Maximum Unit RF
Agilent Technologies
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J-STD-033 J-STD-020A WR20310-001 CDMA2000-1X/EVDO

transistor wm

Abstract: smd transistor marking 1 da (887-925MHz) Power Amplifier Module for J-CDMA(887-925MHz) The WS1213 is a CDMA(Code Division Multiple , manufactured on an advanced InGaP HBT (Hetero-junction Bipolar Transistor) MMIC(Microwave Monolithic Integrated , Control Logic Vbias (3) Input Match MMIC MODULE Vcc1(5) 2 Preliminary Information Vcc2(6) WM-0410-02 DA Inter Stage Match PA Output Match RF Input (4) RF Output (8) !" ELECTRICAL SPECIFICATIONS WS1213 Power Amplifier Module for J-CDMA(887-925MHz) Table 1. Absolute Maximum Ratings Parameter RF
WAVICS
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transistor wm smd transistor marking 1 da 887-925MH

RF MMIC MARK CODE E4

Abstract: icc 312 MMIC amplifier is a lowcost, high-performance solution for general purpose RF and microwave , to ground plane. Same as pin 1. Same as pin 1. RF input pin. This pin is NOT internally DC blocked , and cause temperature instability. Same as pin 1. Same as pin 1. Same as pin 1. RF output and bias , NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product , 1 Indicator 1 2 3 RF OUT Ground 8 9 4 Ground RF IN 7 6 5
RF Micro Devices
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NBB-310 NBB-312-T1 NBB-312-E RF MMIC MARK CODE E4 icc 312 MATERIAL DECLARATION inductor GaN Bias 25 watt NBB-300 DS080807 2002/95/EC

ERA-1 MAR

Abstract: MMIC marking code R alphanumeric code on case. See specification data sheet. Special Tolerances: Biasing MMIC Amplifiers , 1.50 1.90 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) Pin Connections Port RF in RF Out DC Case GND Not Used cb 1 3 3 2,4 Notes: · Model number designated by alphanumeric code marking. · , , NF, IP3 at 2 GHz. · fU is the upper frequency limit for each model as shown in the table. · Absolute , Finish: Case material: plastic. Lead finish: tin-lead plate or tin plate. Marking: RF input lead (1
Mini-Circuits
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ERA-1 MAR MMIC marking code R DC-8000 VV105

MMIC MAV 11

Abstract: VV105 1.30 1.80 120 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) Pin Connections Port RF in RF Out DC Case GND Not Used cb 1 3 3 2,4 Notes: · Model number designated by alphanumeric code marking. · , Maximum Power, NF, IP3 at 1 GHz. · fU is the upper frequency limit for each model as shown in the table. · , Finish: Case material: plastic. Lead finish: tin-lead plate or tin plate. Marking: RF input lead (1 , ) in either direction; (b) orientation mark on the case. Model dash number identified by color dot or
Mini-Circuits
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MMIC MAV 11 DC-4000

era2

Abstract: alphanumeric code on case. See specification data sheet. Special Tolerances: Biasing MMIC Amplifiers , 1.20 1.60 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) Pin Connections Port RF in RF Out DC Case GND Not Used cb 1 3 3 2,4 Notes: · Model number designated by alphanumeric code marking. · , , NF, IP3 at 2 GHz. · fU is the upper frequency limit for each model as shown in the table. · Absolute , Finish: Case material: plastic. Lead finish: tin-lead plate or tin plate. Marking: RF input lead (1
Mini-Circuits
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era2 DC-6000

MMIC marking code R

Abstract: RF MMIC MARK CODE -03 to fU/2) U=upper range(fU/2 to fU) Pin Connections Port RF in RF Out DC Case GND Not Used cb 1 3 3 2,4 Notes: · Model number designated by alphanumeric code marking. · Permanent damage may occur if , at 2 GHz. · fU is the upper frequency limit for each model as shown in the table. · Absolute maximum , : plastic. Lead finish: tin-lead plate or tin plate. Marking: damage. See Biasing MMIC Amplifiers , without notice. RF input lead (1) identified by one or both of the following at factory option: (a
Mini-Circuits
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vv105 mini ERA-3 DC-3000

MMIC marking code U

Abstract: ) orientation mark on the case. Model dash number identified by color dot or alphanumeric code on case. See , 1.60 1.80 120 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) Pin Connections Port RF in RF Out DC , designated by alphanumeric code marking. · Permanent damage may occur if any of these limits are exceeded , frequency limit for each model as shown in the table. · Non-hermetic · Absolute maximum ratings: Operating , . Lead finish: tin-lead plate or tin plate. Marking: RF input lead (1) identified by one or both of the
Mini-Circuits
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MMIC marking code U
Abstract: 1.20 1.30 120 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU) Pin Connections Port RF in RF Out DC , designated by alphanumeric code marking. · Permanent damage may occur if any of these limits are exceeded , Maximum Power, NF, IP3 at 1 GHz. · fU is the upper frequency limit for each model as shown in the table. · , : RF input lead (1) identified by one or both of the following at factory option: (a) diagonally cut lead, which may be 45°(ref) in either direction; (b) orientation mark on the case. Model dash number Mini-Circuits
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murata COG capacitor

Abstract: CGB241 RF input 3 NC No connection; It is recommended to ground this pad as short as possible e.g , GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 , Home RF · Cordless Phones · IEEE 802.11b · ISM-band Spread Spectrum Package , 1 Max. Total Power Dissipation ) PTOT 0.5 W Max. RF Input Power 2) PIN,MAX +10 , 1 ) Thermal resistance between junction and pad 7 ( = heatsink ): RTHCH = 100 K/W. ) No RF input
TriQuint Semiconductor
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CGB241 murata COG capacitor MARKING pg SMA capacitor 22 pf

12M05019A73

Abstract: grounded as the preferred user configuration. RF performance figures are quoted with n/c; Note 5: The , Features · · · · · · · · · · · · pHEMT GaAs MMIC Die Excellent Cross-Modulation Performance 108 dBm Typ , pole three throw (SP3T) configuration. The die utilizes TriQuint's PHEMT MMIC switch process to provide , cellular, PCS, AWS and GPS to ports RF1, RF2 or RF3 as desired. Applications · CDMA Handset Antenna , ,2 Test Conditions Antenna to Selected RF Port (824 ­ 894 MHz) Antenna to Selected RF Port (1574 ­
TriQuint Semiconductor
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12M05019A73 TQP4M3019 J-STD-020

CX77133

Abstract: linearity requirements of Code Division Multiple Access (CDMA) PCS transmission with high power added , Integrated Circuit (MMIC) contains all the active circuitry in the module. The MMIC contains on-board bias circuitry, as well as input and interstage matching circuits. Output match is realized off-chip within the , reference pin to zero volts. No external supply side switch is needed as typical "off" leakage is a few , RF Input (2) Input Match Inter Stage Match DA PA Output Match RF Output (5
Conexant Systems
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CX77133
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