BCR5PM-14LG REJ03G1558-0100 E223904 E80271 PRSS0003AA-A C/150 SC-67 - Datasheet Archive

 

Triac Medium Power Use REJ03G1558-0100 Rev.1.00 Jul 06, 2007 Features · · · · · The Product

 

BCR5PM-14LG BCR5PM-14LG Triac Medium Power Use REJ03G1558-0100 REJ03G1558-0100 Rev.1.00 Jul 06, 2007 Features · · · · · The Product guaranteed maximum junction temperature 150°C · Insulated Type · Planar Type · UL Recognized: Yellow Card No. E223904 E223904 File No. E80271 E80271 IT (RMS) : 5 A VDRM : 800 V (Tj = 125°C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications Switching mode power supply, Washing machine, small motor controller, copying machine, electric heater control, and other general controlling devices Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM REJ03G1558-0100 REJ03G1558-0100 Page 1 of 7 Rev.1.00 Jul 06, 2007 Voltage class 14 800 700 840 Unit Conditions V V V Tj = 125°C Tj = 150°C BCR5PM-14LG BCR5PM-14LG Parameter RMS on-state current Symbol IT (RMS) Ratings 5 Unit A Surge on-state current ITSM 50 A I2 t 10.4 A2s PGM PG (AV) VGM IGM Tj Tstg - Viso 5 0.5 10 2 ­ 40 to +150 ­ 40 to +150 2.0 2000 W W V A °C °C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 113°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 · T2 · G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. - - Typ. - - Max. 2.0 1.8 Unit mA V Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 7 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT - - - - - - 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT - - - - - - 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2/0.1 - - - - 4.9 V °C/W Tj = 125°C/150 C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5/1 - - V/µs Tj = 125°C/150 C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150 C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = ­ 2.5 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1558-0100 REJ03G1558-0100 Page 2 of 7 Rev.1.00 Jul 06, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR5PM-14LG BCR5PM-14LG Performance Curves 102 7 5 3 2 100 1 10 7 5 3 2 Tj = 150°C 0 10 7 5 3 2 10 Rated Surge On-State Current Tj = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics ­1 90 80 70 60 50 40 30 20 10 0 0 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 3 5 7 10 1 2 3 5 7 10 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 5 3 2 VGM = 10V PGM = 5W Gate Voltage (V) 1 10 7 5 3 2 PG(AV) = 0.5W IGM = 2A VGT = 1.5V 0 10 7 5 3 2 10­1 VGD = 0.1V 7 IFGT I IRGT I, IRGT III 5 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) On-State Voltage (V) 2 103 7 5 3 2 Typical Example IRGT III 102 7 5 3 2 IFGT I IRGT I 1 10 7 5 3 2 100 ­60 ­40­20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 2 10 7 5 3 2 101 ­60 ­40­20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G1558-0100 REJ03G1558-0100 Page 3 of 7 Rev.1.00 Jul 06, 2007 Transient Thermal Impedance (°C/W) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Current (mA) 102 2 3 5 7103 2 3 5 7104 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10­1 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) BCR5PM-14LG BCR5PM-14LG Maximum On-State Power Dissipation 3 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10­1 1 10 No Fins On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 9 8 7 6 5 4 3 2 360° Conduction Resistive, inductive loads 1 0 0 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 1 2 3 4 5 6 7 8 9 10 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 7 160 Ambient Temperature (°C) Case Temperature (°C) 160 140 60 × 60 × t2.3 120 100 × 100 × t2.3 80 60 40 Curves apply regardless All fins are black painted aluminum and greased of conduction angle 20 Resistive, inductive loads Natural convection 0 0 8 120 × 120 × t2.3 100 1 2 3 4 5 6 7 8 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Ambient Temperature (°C) 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) REJ03G1558-0100 REJ03G1558-0100 Page 4 of 7 Rev.1.00 Jul 06, 2007 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) RMS On-State Current (A) 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example ­60 ­40­20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR5PM-14LG BCR5PM-14LG Holding Current vs. Junction Temperature 3 VD = 12V Distribution 3 2 Typical Example 101 7 5 3 2 Latching Current (mA) Holding Current (mA) 102 7 5 Latching Current vs. Junction Temperature 100 ­60 ­40­20 0 20 40 60 80 100 120 140 160 10 7 5 3 2 T2+, G+ Typical Example T2­, G­ Distribution 102 7 5 3 2 T2+, G­ Typical Example 101 7 5 3 2 10 0 ­60 ­40­20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 ­60 ­40­20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 80 60 III Quadrant 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 80 60 III Quadrant 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) REJ03G1558-0100 REJ03G1558-0100 Page 5 of 7 Rev.1.00 Jul 06, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 102 7 5 III Quadrant 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 1 10 7 5 I Quadrant 3 2 Minimum Characteristics Value Typical Example Tj = 125°C IT = 4A = 500µs VD = 200V f = 3Hz 100 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Rate of Decay of On-State Commutating Current (A/ms) BCR5PM-14LG BCR5PM-14LG Gate Trigger Current vs. Gate Current Pulse Width 102 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=150°C) Typical Example Tj = 150°C IT = 4A = 500µs VD = 200V f = 3Hz 1 10 7 5 I Quadrant 3 Minimum 2 Characteristics III Quadrant Value 0 10 0 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 710 Rate of Decay of On-State Commutating Current (A/ms) Typical Example IRGT III 3 IRGT I 2 102 7 5 IFGT I 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6 3 10 7 5 Recommended Circuit Values Around The Triac Load 6 C1 A 6V V Test Procedure I V A V 330 Test Procedure III REJ03G1558-0100 REJ03G1558-0100 Page 6 of 7 Rev.1.00 Jul 06, 2007 C0 R0 330 Test Procedure II 6 6V R1 A 6V 330 C1 = 0.1 to 0.47µF C0 = 0.1µF R1 = 47 to 100 R0 = 100 BCR5PM-14LG BCR5PM-14LG Package Dimensions Package Name TO-220F JEITA Package Code SC-67 SC-67 Previous Code RENESAS Code PRSS0003AA-A PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name ­ Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G1558-0100 REJ03G1558-0100 Page 7 of 7 Rev.1.00 Jul 06, 2007 Standard order code example BCR5PM-14LG BCR5PM-14LG BCR5PM-14LG-A8 BCR5PM-14LG-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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