FX70SMJ-03 REJ03G1456-0200 MEJ02G0271-0101 PRSS0004ZB-A SC-65 FX70SMJ-03-A8 - Datasheet Archive

 

High-Speed Switching Use Pch Power MOS FET REJ03G1456-0200 (Previous: MEJ02G0271-0101) Rev.2.00 Aug 07, 2006 Features ·

 

FX70SMJ-03 FX70SMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1456-0200 REJ03G1456-0200 (Previous: MEJ02G0271-0101 MEJ02G0271-0101) Rev.2.00 Aug 07, 2006 Features · · · · · Drive voltage : 4 V VDSS : ­30 V rDS(ON) (max) : 12.3 m ID : ­70 A Integrated Fast Recovery Diode (TYP.) : 70 ns Outline RENESAS Package code: PRSS0004ZB-A PRSS0004ZB-A (Package name: TO-3P) 4 3 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 2, 4 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Symbol VDSS VGSS ID IDM Ratings ­30 ±20 ­70 ­280 Unit V V A A IDA IS ISM PD Tch Tstg - ­70 ­70 ­280 150 ­ 55 to +150 ­ 55 to +150 4.8 A A A W °C °C g Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value FX70SMJ-03 FX70SMJ-03 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min ­30 - - ­1.3 - - - - - - - - - - - - - Typ - - - ­1.8 10.0 19 ­0.35 55.8 11140 2300 1000 85 228 751 360 ­1.0 - Max - ±0.1 0.1 ­2.3 12.3 25 ­0.43 - - - - - - - - ­1.5 0.83 Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W trr - 70 - ns Reverse recovery time Rev.2.00 Aug 07, 2006 page 2 of 6 Test Conditions ID = ­1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = ­30 V, VGS = 0 V ID = ­1 mA, VDS = ­10 V ID = ­35 A, VGS = ­10 V ID = ­26 A, VGS = ­4 V ID = ­35 A, VGS = ­10 V ID = ­35 A, VDS = ­10 V VDS = ­10 V, VGS = 0 V, f = 1MHz VDD = ­15 V, ID = ­35 A, VGS = ­10 V, RGEN = RGS = 50 IS = ­35 A, VGS = 0 V Channel to case IS = ­35 A, dis/dt = 50 A/µs FX70SMJ-03 FX70SMJ-03 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve ­3 ­2 200 Drain Current ID (A) Power Dissipation PD (W) 250 150 100 50 0 0 50 100 150 tw = 100µs ­102 ­7 ­5 1ms ­3 ­2 ­10 1 ­7 ­5 DC Tc = 25°C Single Pulse ­3 ­2 ­10 0 ­7 ­5 ­2 ­3 ­5­7­100 ­2 ­3 ­5­7­101 ­2 ­3 ­5­7­102 ­2 200 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) ­100 ­50 ­80 VGS = ­10V ­6V ­8V PD = 150W ­5V ­60 ­4V ­40 Tc = 25°C Pulse Test ­20 Drain Current ID (A) Drain Current ID (A) VGS = ­10V ­6V ­8V ­40 ­4V ­30 ­20 ­3V ­10 Tc = 25°C Pulse Test ­3V 0 0 ­0.4 ­0.8 ­1.2 ­1.6 ­5V 0 ­2.0 0 ­0.2 ­0.4 ­0.6 ­0.8 ­1.0 Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) ­2.0 Tc = 25°C Pulse Test ­1.6 ID = ­100A ­1.2 ­0.8 ­70A ­0.4 0 ­35A 0 ­2 ­4 ­6 ­8 Gate-Source Voltage VGS (V) Rev.2.00 Aug 07, 2006 page 3 of 6 ­10 Drain-Source On-State Resistance rDS(ON) (m) Drain-Source On-State Voltage VDS(ON) (V) Drain-Source Voltage VDS (V) 40 Tc = 25°C Pulse Test 32 24 VGS = ­4V 16 ­10V 8 0 ­100 ­2 ­3 ­5 ­7­101 ­2 ­3 ­5­7 ­102 ­2 ­3 ­5 ­7­103 Drain Current ID (A) FX70SMJ-03 FX70SMJ-03 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) ­100 Tc = 25°C VDS = ­10V Pulse Test ­80 ­60 ­40 ­20 0 0 ­2 ­4 ­6 ­8 ­10 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 102 VDS = ­10V Pulse Test 7 5 4 3 2 TC = 125°C 75°C 25°C 101 7 5 4 3 2 100 0 ­10 ­2 ­3 ­5 ­7 ­101 ­2 ­3 ­5 ­7 ­102 Gate-Source Voltage VGS (V) Drain Current ID (A) Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 103 2 Capacitance C (pF) 7 5 Switching Time (ns) Tch = 25°C f = 1MHz VGS = 0V 105 3 2 Ciss 104 7 5 Coss 3 2 Crss 103 7 5 td(off) 7 5 4 3 tf 2 tr td(on) 102 7 5 4 3 Tch = 25°C VGS = ­10V VDD = ­15V RGEN = RGS = 50 2 3 2 ­3 ­5 ­7 ­100 ­2 ­3 ­5 ­7 ­101 101 ­5 ­7 ­100 ­2 ­3 ­5 ­7 ­101 ­2 ­3 ­5 ­7 ­102 ­2 ­3 ­5 ­2 ­3 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) ­100 VGS = 0V Pulse Test Tch = 25°C ID = ­70A Source Current IS (A) Gate-Source Voltage VGS (V) ­10 ­8 VDS = ­10V ­20V ­25V ­6 ­4 ­2 0 0 40 80 120 160 Gate Charge Qg (nC) Rev.2.00 Aug 07, 2006 page 4 of 6 200 ­80 ­60 TC = 25°C 75°C 125°C ­40 ­20 0 0 ­0.4 ­0.8 ­1.2 ­1.6 ­2.0 Source-Drain Voltage VSD (V) On-State Resistance vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) FX70SMJ-03 FX70SMJ-03 101 7 5 4 3 VGS = ­10V ID = ­35A Pulse Test 2 100 7 5 4 3 2 10­1 ­50 0 50 100 150 Threshold Voltage vs. Channel Temperature (Typical) ­4.0 ­3.2 VDS = ­10V ID = ­1mA ­2.4 ­1.6 ­0.8 0 ­50 0 50 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics 1.4 VGS = 0V ID = ­1mA 1.2 1.0 0.8 0.6 0.4 ­50 0 50 100 150 Transient Thermal Impedance Zth(ch­c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Channel Temperature Tch (°C) 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2 0.1 PDM 10­1 tw 7 5 T 0.05 0.02 0.01 Single Pulse 3 2 D= tw T 10­2 ­4 10 2 3 5 710­3 2 3 5 710­2 2 3 5 710­1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. RGEN 90% RL 90% 90% VDD RGS Vout td(on) Rev.2.00 Aug 07, 2006 page 5 of 6 10% 10% tr td(off) tf FX70SMJ-03 FX70SMJ-03 Package Dimensions JEITA Package Code SC-65 SC-65 Package Name TO-3P* RENESAS Code PRSS0004ZB-A PRSS0004ZB-A Previous Code MASS[Typ.] 4.8g Unit: mm 4.5 15.9Max 4 2 3.2 20.0 5.0 1.5 2 19.5Min 4.4 1.0 0.6 2.8 5.45 5.45 4 Order Code Lead form Standard packing Quantity Standard order code Straight type Static electricity prevention bag 20 Type name Lead form Plastic Magazine (Tube) 30 Type name ­ Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FX70SMJ-03 FX70SMJ-03 FX70SMJ-03-A8 FX70SMJ-03-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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