RDN100N20 0000E-6 1207E-6 000E-3 0000E6 0000E-3 00E-6 67E-15 324E-3 83E-12

RDN100N20 by ROHM TR Div. * RDN100N20 NMOSFET model * Date: 2007/08/10 *D G S .SUBCKT RDN100N20 1 2 3 M1 11 22 3 3 MOS_N C1 1 3

SPICE PARAMETER RDN100N20 RDN100N20 by ROHM TR Div. * RDN100N20 RDN100N20 NMOSFET model * Date: 2007/08/10 *D G S .SUBCKT RDN100N20 RDN100N20 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 10p D1 3 1 DDS R1 1 11 RTH .171 D2 11 21 DDG D3 22 21 DDG R2 2 22 10.5 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=1 + KP=3.1207E-6 1207E-6 + RS=10.000E-3 000E-3 + RD=0 + VTO=2.8198 + RDS=8.0000E6 0000E6 + TOX=2.0000E-6 0000E-6 + CGSO=700p + CGDO=20p + CBD=0 + RG=0 + N=2 + RB=1.0000E-3 0000E-3 + GAMMA=0 + ETA=100.00E-6 00E-6 + KAPPA=0 .MODEL DDS D + IS=281.67E-15 67E-15 + N=.94633 + RS=16.324E-3 324E-3 + IKF=.50607 + CJO=239.83E-12 83E-12 + M=1.0633 + VJ=11.825 + BV=200 + TT=135n .MODEL DDG D + CJO=1.4956E-9 4956E-9 + M=1.0808 + VJ=.9816 + BV=200 .MODEL RTH RES + TC1=0.009 + TC2=0.00003 .ENDS RDN100N20 RDN100N20