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Part Manufacturer Description Datasheet BUY
ISL80510IRAJZ Intersil Corporation High Performance 1A LDO; DFN8; Temp Range: -40° to 125°C visit Intersil
HS0-5104ARH-Q Intersil Corporation QUAD OP-AMP, 3000uV OFFSET-MAX, 8MHz BAND WIDTH, UUC14, DIE-14 visit Intersil
ISL80510IRAJZ-T Intersil Corporation High Performance 1A LDO; DFN8; Temp Range: -40° to 125°C visit Intersil
ISL80510IRAJZ-T7A Intersil Corporation High Performance 1A LDO; DFN8; Temp Range: -40° to 125°C visit Intersil
LMR10510XMF Texas Instruments IC 1 A SWITCHING REGULATOR, 1.95 kHz SWITCHING FREQ-MAX, PDSO5, 2.92 X 1.6 MM, PLASTIC, SOT23-5, Switching Regulator or Controller visit Texas Instruments
LMR10510YSDX Texas Instruments IC 1 A SWITCHING REGULATOR, 3.75 kHz SWITCHING FREQ-MAX, PDSO6, 3 X 3 MM, PLASTIC, LLP-6, Switching Regulator or Controller visit Texas Instruments

RAS 0510

Catalog Datasheet MFG & Type PDF Document Tags

RAS 0510

Abstract: RAS 0510 connection diagram (RAS, CAS, WE, OE) Data Input/Output Capacitance (DQ0-DQ3) 5 7 7 PF pF PF " 1A D 05-10 , (L-part) 2048 refresh cycles / 32ms VC C DQ0 Q fil JME RAS NC A10 A0 A1 A2 A3 VCC 10 , 3 4 5 6 â¡ VC C d DQO d DQ1 nW E a RAS oN C 9 QA10 10 nAO 1 o A1 1 12 a A2 13 oA 3 14 DVC C DQ0 DQ1 DQ2 DQ3 PIN DESCRIPTION RÃ"S CÃ"5 WE ÃE A0-A10 DQ0-DQ3 , D 05-10-A P R 93 4fc.750flû O O O l b O S 5Tb «HYUNDAI HY5117400 Series DC
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RAS 0510 RAS 0510 connection diagram 05-10-AP HY5117400JC HY5117400LJC HY5117400TC HY5117400LTC HY5117400RC

QML-38535

Abstract: SMD AH 04.09 45 05.10 40 Access time from RAS low la , 20 05.10 18 All 10 us Pulse duration,_ page-mode, RAS low 6/ *w(RL)P 9,10,11 , 04.09 10 05.10 10 Puise duration, RAS high (préchargé) *w(RH) 9,10,11 01.06 100 , 04.09 20 05.10 18 Setup time. W low 'su(WRH) 9,10,11 01.06 40 ns before RAS high 02.07 30 , 05.10 55 Hold time, column address after RAS low 10/ lh(RLCA) 9,10,11 01.06 100 ns
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QML-38535 SMD AH stc 1740 SMJ44C256-12JDM SMJ44C256-15JDM MT4C4256C 5962-R049-93 5962-E532-98 TD047D6 4256EC-10883C 5962-9061708MRA 0EU86
Abstract: 2faE D August 6, 1990 â  05547^3 0000510 0 â  â'˜ ADVANCED ELECTRONIC PK G AEPDX256K9 DYNAMIC RAM MODULE > > 262,144 x 9 Organization > > Low 0.510 inch stand-off height > > 30 , dimensions are 0.510 in. high (including the I/O pin stand-off) by 3.00 in. long by 0.340 in. wide , : (714) 536-0936 T) C T > 0 : 340 MAX. -3 . â¡ â¡ â¡ 0.510 1"UUUUU * \ 0.100 , * VSS DQ7 PODD* DQ8 Q9 RAS* CAS9* D9 VCC ' A0 - A8 DQ1 - DQ8 D9 Q9 RAS* CAS* CAS 9 -
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256KX9

RAS 0510

Abstract: dynamic ram module AEPDX1M8LB DYNAMIC RAM MODULE > > 1,048,576 x 8 Organization > > Low 0.510 inch stand-off , - - CAS* dq, V \ 1 3 \_ M _ V_2*_ \_ 2 Z _ AO A1 A3 A4 A5 AS A7 A8 A9 RAS CAS we -1MX1 , AO A1 A2 A3 A4 A5 AS A7 A0 A9 RAS CAS we Dl DO - o ^ - - - - DQ3 A4 A5 dq4 A6 A7 , A4 AS AS A7 A8 AO RAS CAS WE DRAM 1M X1 DRAM Dl DO ~w IB" " 52" 13" I T 1 3 " 17 18 19 20 21 22 23 24 25 26 27 28 - - - - - - - - - - RAS CA5 VE 1M X 1 WE* VSS DQ7 NC
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dynamic ram module

RAS 0510

Abstract: STOL76 DRAWING No. REV. DATE R E V IS IO N RECORD DR CK APPR 1214730 SHEET I OF I L/O A B 13JA94 08MR94 13SE97 DESENHO ADOTADO PELA DELPHI-P. ADOTADA REV I SAO 12 DO FORNECEDOR. ADOTADO DESENHO MAIS RECENTE E ADICIONADO 0 P/N 15327182. RAS RAS VS VS VS VS tí/- - j LL jl ,¡'3. ; Feld Zone r Index lfd Nr Indexnunbef 2 .' 1 Üatum Düte Name , i 400 791 FLY FLY FLY FLY FLY 1,5-2.5 0.5-1.0 4.0 1.5-2.5 0.5-1.0 sealed sealed unsealed unsealed
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STOL76 029/K 09N094 ST0L76

RAS 0510

Abstract: aepdx1m9l AEPDX1M9L DYNAMIC RAM MODULE > > 1,048,576 x 9 Organization > > 3 0 pin SIP > > Low 0.510 inch , A3 A4 AS A6 A7 A0 A9 RAS CAS VE DI DO Ao A1 VJtB_ AO A7 AS A9 RAS GAG VE 1M K-1 1C AO A1 , A4 A5 AO A7 AS AS RAS CAS VE 1M k 1 O ID 2 OPW M DI DO "= ÎB " ·15 DQ4 A6 A7 dq5 , A2 A3 A4 A5 AO A7 A8 AS RAS CAS VE 1M X1 tC 7 AQ A1 AZ A3 A4 AS A fi \ 10 \_ 1 1 AO A1 A2 A3 A4 A5 A fi A7 AB AQ RAS CAS VE DI DO v3 T \_13_ \Z 2 _ 23 24 25 26 27 28 29 30 $9 RAS* CAS
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aepdx1m9l 74F280
Abstract: ET >> 1,048,576 x 9 Organization > > 3 0 p in SIP > > Low 0.510 in ch stand-off height » O , , 12 13 14 15 16 17 18 19 AO A1 A2 A3 A4 A5 AS A7 A8 A3 RAS CAS VE A3 â'" T-Vh -2 3 -/i?' FUNCTIONAL DIAGRAM dq5 RAS DRAM \ _9 Dl \ 10 DO \ N J1 \ i5 vze: \ -1 7 V 2Ia RAS CAS VE A8 IC 4 s r 1 *1 DQ6 15 WE* VSS , A7 A8 AS Dl CO RAS CAS VE Dl \ \ DO 10 11 sqrar \_1Z_ \ZE \ SZ -
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RAS 0510

Abstract: AEPDX4M8LB DYNAMIC RAM MODULE >> 4,194,304 x 8 Organization > > Low 0.510 inch stand-off , 6 7 2 2 8 9 10 K ^ "W 15 1B \ 17 TT AÛ A1 A3 A4 A5 AB A7 A6 A9 A1Q RAS CAS WE 4 W , A2 A3 A4 A3 AO A7 A8 A9 A1Q RAS CAS WE Dl DO DRAM *fc* , A2 A3 A4 AS A6 A7 AB A9 A10 RAS CAS WE DI DO \ 11 \ i» \ 1B * AC T I V E W H E N LOW * ANC FOR , DRAM IC AO A1 A2 A3 A4 AS A6 A7 AS AÛ A1Q RAS CAS WE 7 Dl DO AO A1 A2 A3 A4 AS AO A7 A8 AQ A10
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1mx1 DRAM

Abstract: DYNAMIC RAM MODULE 7~-Â¥6-e3 '-/$ > > 1,048,576 x 8 Organization > > Low 0.510 in ch stand-off heig , A7 AS A9 di DO RAS CAS ve 25 we 1MX1 DRAM vss 10 11 12 13 14 15 16 17 18 19 FUNCTIONAL DIAGRAM 1 X OA M*1 R M RAS CAS ic a dq 4 Dl \ 21 DQ6 RAS GAS VE HAS CAS WE WE* 1MX1 DRAM 1MX1 DRAM 22 VSS 23 24 25 26 27 28 NC DQ8 NC RAS* VCC 20 â'" \ 1 -1 \1±- A. 7 DQS \_li_ \ *ia
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1mx1 DRAM
Abstract: DYNAMIC RAM MODULE T '- V 6 - Z 3 - i8 > > 4,194,304 x 8 Organization > > Low 0.510 in ch stand-off h e , S N S \ Ao A, dq2 *2 A3 AO A1 AZ A3 A4 AS AO A7 A0 A9 A1Û RAS CAS WE , RAS* VCC DO 1 ZS V j o15 V _ \ \3 I DRAM M * ACTIVE WHEN LOW ⡠I DO , A3 A4 AS A6 " A7 AS A9 A10 RAS ri CAS WE DO A3 A4 AS AO A7 Aa AS A10 RA5 CAS , \J£_ AQ A1 AZ A3 A4 AS AO A7 AS A9 A1Q RAS CAS VE 5 AQ A1 A2 A3 A4 AS AO -
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Abstract: MODULE > > 4,194,304 x 9 Organization » 3 0 p in SIP > > Low 0.510 inch stand-off height > > O , 4M k 1 DbAM TS- A1 7 AO A4 A2 A3 AH A5 AO A7 A0 AS A iQ RAS CAS VE A2 , 23 24 25 26 27 28 29 30 dq AQ A i T3 â'ïT" 7 A10* * * DQ8 ^9 RAS , i A2 A3 A4 AS AS A7 AS Ad A iQ RAS C AS WE Dl \_I_ Vü \ _15L VZE l/gAS'a , A fl A iQ RAS C AS VS Dl DO ORAM Dl DO 4fcfc -
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RAS 0510

Abstract: 1 DRAWING No. REV L/O A DATE 27JL95 30AU96 REVISION RECORD D E S E N H O AD O T ADO P E L A D E L P H I - P . D E S E N H O AD O T ADO EM NOVO FO R M A T O . DR RAS CK AK APPR 12185272 SH EET 1 OF i 0 / )fP /I 1 Feld Zone Index lfd N r. Indexnum ber Änderung / Revision Datum Date Name Geprüft Checked 8 , 3 5 -«.is 2 . 8 -0.15 B-B A-A Nur zur , /Sfol 76 K 62/Stol 76 K 62/Stol 76 Werkstoff FLY FLY FLY 4,0-6.0 15-2,5 0.5-1.0 unsealed
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061/K

RAS 0510

Abstract: Perform ance: -70 I rac RAS Access Time tcAC CA S Access Tim e tAA Access Tim e From Address tRC Cycle , All inputs buffered except RAS and DATA inputs M ultiple RAS inputs for x16 or x32 selectability 11/10 , , CAS before RAS and BBU (Battery Backup) 2048 refresh cycles distributed across 256m s Polarized C , allow the sys tem d e signer to w o rk w ith a sim pler interface. The DQ and RAS signals are not buffered, which pre serves th e access specification o f 70ns. M ultiple RAS inputs are used to conserve
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IBM11J2320HN 1J2320H 64G1721 MMDI16DSU-00 11J2320HN

RAS 0510 connection diagram

Abstract: RAS 0510 ) PARAMETER GM71C4256(nsj -85 -10 -12 *RAC RAS Access Time 85 100 120 *AA Column Adress Access Time 45 , Inputs RAS Row Address Strobe CAS Column Address Strobe WRITE Read/Write Input OE Output Enable 1 , RAS vcc GND II & No. 2 CLOCK GENERATOR Vi I n COLUMN ADDRESS BUFFER (9) Hi ROW ADDRESS BUFFER , Current Power Supply Standby Current (RAS=CAS=V,h) â'" 3 mA 'c03 RAS Only Refresh Current Average Power Supply Current RAS Only Mode (RAS Cycling, CAS=VIH: tRn=tRR MIN) 85 â'" 75 mA 3 100 â'" 65 120 â
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GM71C4256-85 GM71C4256-12 GoldStar 40267 GOLDSTAR TECHNOLOGY INC 402A7S7 OODS57 144X4 T-90-20

GoldStar

Abstract: GM71C4256-85 â¡ A4 PARAMETER GM71C4256(ns) -85 -10 -12 *RAC RAS Access Time 85 100 120 'aa Column , /8ms â'¢ Industry standard 20 pin Plastic DIP a0-a8 Address Inputs RAS Row Address Strobe CAS , 120 â'" 55 'CC2 Standby Current Power Supply Standby Current (RAS=CAS=V,H) â'" 3 mA 'CC3 RAS Only Refresh Current Average Power Supply Current RAS Only Mode (RAS Cycling, CAS=V,H: tRO=tRO MIN) 85 , Capacitance (RAS, CAS, WRITE, OE) â'" 7 PF Co Output Capacitance (I/OH/O4) â'" 7 PF 89 GOLDSTAR TECHNOLOGY
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104 csk 14 tv goldstar 1/02C T-Y6-23-/7 GM71C4256-1

71c1000

Abstract: GA032 (Max) · Single Power Supply of 5V ± 1 0 % with a built-in V bb generator GM71C1000(n>) Din WE RÂS TFM PARAMETER tRAC tAA tCAC tRC -80 80 40 25 160 55 -10 100 45 25 -12 120 55 30 RÂS , , CAS Before RAS Refresh and Fast page Mode Capability ·A ll input and output TTL compatible · 5 1 2 , 4G2Ô757 QDQ32Q3 3 * G S T T -4 6 -2 3 -1 5 GM71C1000 Pin Description A o ~ Ao RÂS Ca s we , Operating Current (RAS, CAS, Address Cycling: tRc =tRc MIN) Standby Current (TTL) Power Supply Standby
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GM71C1000-80 GM71C1000-12 71c1000 GA032 trw 1014 71C1000 GM71C1000-10

RAS 0510

Abstract: HB56AW172E Series / 3.93 W (max) Standby mode (TTL) : 166 mW (max) Buffered input except /RAS and DQ 4 byte interleave , of refresh /RAS - only refresh /CAS - before - RAS refresh TTL compatible Ordering Information , SupPlY voltage relative to Vss Vcc -0.510 +4.6 v Short circuit output current Iout 50 , /CAS=ViH to disable Dout. I/O capacitance Notre : I C12 Input capacitance (/RAS) Max , Cycles (Common parameters) ~56AW172E Parameter Random , read or write cycle time /RAS precharge
Hitachi
Original
HB56AW172E-6B HB56AW172E Series Hitachi DSA0088 HB56AW172E-7B HB56AW172E-8B ms1j HB56AW172E 576-W HM51W4400BTT 74LVT16244DGG D-656

GM71C464A

Abstract: of the CAS, DT/OE, WB/WE and SE signals sampled at the falling edge of RAS at the beginning of a , increasing address direction. Pin Configuration tra" W3/103 SKD2 v ss SIOO DT/ÖE W1/I01 RAS A5 2 p 4 6 7 , rite E nable D ata T ransfer/O utput E nable SAM Port E nable Pow er Supply G round SlOO ~ S I03 RÄS , 4) 256K MEMORY ARRAY H CONTROL TIMING RAS CÁS W B/W Ê * SC Vcc 1 Vss A D D RESS POINTER , Signals (Sampled at the falling edge of RAS CAS Read W rite Bit M asked W rite M ode not affected M ode
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GM71C464A GM53C261-12 GM53C261
Abstract: WA0-WA19 OE â'"CE (1Mx8) WAO-WA19 AQ-A9 DROE DRWE RAS CAS Schematic & Layout Review Service CS4112 ROM Confirm Optimum WD0-WD7 CS9233 ÃE WE RÃ"S CAS Crystal , NCHES MIN NOM MAX 0.390 0.400 0.410 0.490 0.500 0.510 0.590 0.600 0.610 0.690 0.700 0.710 -
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CS4112-CS MPU-401 DS177PP5
Abstract: AEPDX4M9L DYNAMIC RAM MODULE >> 4,194,304 x 9 Organization > > 3 0 pin SIP > > Low 0.510 inch stand-off height » Optional PARITY CHECKER on board > > Single + 5 V p o w er supply > > TTL compatible > > Pin for pin com patible with standard modules (without parity checker) > > Available in 1M x 9 organization 4 MEGAWORD BY 9 BIT LOW PROFILE DYNAMIC RAM MODULE WITH PARITY CHECKER DESCRIPTION: The , 4M K 1 I C A Q A -1 6 D l D O O R A M RAS* CAS,* D9 VCC -*r ^5~ IT A 2 A A A A A A A A 3 -
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