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RA08N1317M RA08N1317M-01 D-40880 F-92741 I-20041 - Datasheet Archive
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=9.6V, VGG=0V) · Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H46S · T>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW · Broadband Frequency Range: 135-175MHz · Low-Power Control Current IGG=1mA (typ) at VGG=3.5V · Module Size: 30 x 10 x 5.4 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA08N1317M-01 RA08N1317M-01 Antistatic tray, 25 modules/tray RA08N1317M RA08N1317M MITSUBISHI ELECTRIC 1/9 5 April 2004 ELECTROSTATIC SENSITIVE DEVICE MITSUBISHI RF POWER MODULE RA08N1317M RA08N1317M OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDD Drain Voltage RATING 16 VGG=0V, Pin=0W UNIT V VDD Drain Voltage VGG