RA07H4452M 07H4452 RA07H4452M-101

ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M RA07H4452M 07H4452 RoHS Compliance ,440-520MHz 7W 12.5V, 2

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M RA07H4452M RA07H4452M RA07H4452M 07H4452 07H4452 RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. BLOCK DIAGRAM 2 3 1 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW 1 RF Ground (Case) PACKAGE CODE: H46S · T>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW · Broadband Frequency Range: 440-520MHz · Low-Power Control Current IGG=1mA (typ) at VGG=3.5V · Module Size: 30 x 10 x 5.4 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE · RA07H4452M-101 RA07H4452M-101 is a is a RoHS compliant products. · RoHS compliance is indicate by the letter "G" after the Lot Marking. · This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA07H4452M-101 RA07H4452M-101 Antistatic tray, 50 modules/tray RA07H4452M RA07H4452M 28 Jun 2010 1/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M RA07H4452M RA07H4452M RA07H4452M 07H4452 07H4452 RoHS COMPLIANCE MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDD Drain Voltage VGG=0V, Pin=0W VDD Drain Voltage VGG