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R77/02/

Catalog Datasheet MFG & Type PDF Document Tags

BB164

Abstract: SC-76 rights. Printed in The Netherlands R77/02/pp7 Date of release: 2004 Mar 02 Document order , specification Supersedes data of 1997 Dec 17 2004 Mar 02 Philips Semiconductors Product specification , continuous reverse voltage VRM peak reverse voltage IF 2004 Mar 02 in series with a 10 k , = 1 to 28 V; in a sequence of 15 diodes (gliding) - 2 2004 Mar 02 3 % Philips , .3 Reverse current as a function of junction temperature; maximum values. 2004 Mar 02 4 Temperature
Philips Semiconductors
Original
BB164 SC-76 SCA76 R77/02/

BB190

Abstract: SC-76 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp6 , 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode
Philips Semiconductors
Original
BB190
Abstract: other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp7 Date of , 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 Note 1. The marking Philips Semiconductors
Original
BB153

marking code PB

Abstract: BB152 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp7 , 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates
Philips Semiconductors
Original
BB152 marking code PB BB152,115

BB155

Abstract: BB156 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp7 , 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the
Philips Semiconductors
Original
BB155 BB156 diode smd marking code 76

smd DIODE code marking Q

Abstract: BB147 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp7 , 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates
Philips Semiconductors
Original
BB147 smd DIODE code marking Q

BB146

Abstract: SC-76 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp7 , 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE
Philips Semiconductors
Original
BB146 M3D049

smd diode marking code bb156

Abstract: BB156 rights. Printed in The Netherlands R77/02/pp7 Date of release: 2004 Mar 01 Document order , 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2
Philips Semiconductors
Original
smd diode marking code bb156

DIODE smd marking pl

Abstract: 60134 rights. Printed in The Netherlands R77/02/pp7 Date of release: 2004 Mar 01 Document order , 0.15 Q 0.25 0.15 v 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323
Philips Semiconductors
Original
DIODE smd marking pl 60134 BB149A

BFR106

Abstract: MSB003 R77/02/pp10 Date of release: September 1995 NXP Semiconductors , transistor BFR106 1 handbook, full pagewidth 0.5 2 0.2 2000 MHz 1200 1000 +j 0.2 0 ­j 5 1500 10 800 0.5 500 1 2 5 10 200 10 100 0.2 5 , 0.2 0.1 500 200 + 100 40 MHz 0° - 30° 150° 60° 120° MEA402 90 , 1 handbook, full pagewidth 0.5 2 0.2 5 +j 0 0.2 ­j 10 800 MHz 0.5 1
NXP Semiconductors
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MSB003

MSB003

Abstract: BFT25 R77/02/pp10 Date of release: November 1992 NXP Semiconductors , Cc (pF) h FE 0.8 40 0.6 0.4 20 0.2 0 10 ­3 10 ­2 10 ­1 0 1 I C (mA , , full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 ­j 10 200 10 500 800 MHz 0.2 5 2 0.5 MEA916 1 IC = 1 mA; VCE = 1 V; Tamb = 25 C. Zo = , ). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5
NXP Semiconductors
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BFT25

BFT25

Abstract: The Netherlands R77/02/pp10 Date of release: November 1992 NXP Semiconductors , , halfpage Cc (pF) h FE 0.8 40 0.6 0.4 20 0.2 0 10 â'"3 10 â'"2 10 â'"1 0 1 , 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 â'"j 10 ➠200 10 500 800 MHz 0.2 5 2 0.5 MEA916 1 IC = 1 mA; VCE = , pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 â'"j ➠200
NXP Semiconductors
Original

BFR106

Abstract: transistor BFR106 handbook, full pagewidth 1 0.5 2 0.2 1200 +j 0 ­j 1000 0.2 200 2000 MHz 1500 800 0.5 500 1 2 5 10 5 10 10 0.2 100 40 MHz 5 0.5 1 IC = 30 mA; VCE = 6 V , BFR106 handbook, full pagewidth 90° 120° 60° 150° 1200 800 0.5 0.4 0.3 0.2 0.1 200 2000 MHz , , full pagewidth 1 0.5 2 0.2 5 10 2 5 10 +j 0 ­j 0.2 800 MHz 0.5 1 500 200 10 5 0.2 100 40 MHz 0.5 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Zo = 50 . 2 MEA401 1 Fig.9 Common
NXP Semiconductors
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771-BFR106-T/R

PMBF4391

Abstract: PMBF4392 industrial or intellectual property rights. Printed in The Netherlands R77/02/9 Date of release: April , nA VDS = 0 V; VGS = 20 V; Tamb = 150 C IGSS 0.2 A PMBF4392 PMBF4393 IG = 1 , IDSX 0.2 A VGS = 7 V IDSX 0.2 A VGS = 5 V IDSX 0.2 A April 1995 VDS = 20 V; Tamb = 150 C 3 NXP Semiconductors Product , 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23
NXP Semiconductors
Original
PMBF4391 MBK288 MAM385 R77/02/9
Abstract: The Netherlands R77/02/pp8 Date of release: 2001 Apr 17 NXP Semiconductors , DISCRETE SEMICONDUCTORS DAT ok, halfpage M3D102 BAP50-05W General purpose PIN diode Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 NXP Semiconductors Product specification General purpose PIN diode BAP50-05W FEATURES PINNING ï'· Two elements in common , 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Apr 17 REFERENCES IEC JEDEC NXP Semiconductors
Original
MAM382
Abstract: patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp9 , DISCRETE SEMICONDUCTORS DAT ok, halfpage M3D102 BAP64-06W Silicon PIN diode Product specification Supersedes data of 2001 Feb 02 2001 Apr 17 NXP Semiconductors Product specification Silicon PIN diode BAP64-06W FEATURES PINNING ï'· High voltage, current controlled PIN , 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Apr 17 REFERENCES IEC JEDEC NXP Semiconductors
Original
MGU320
Abstract: The Netherlands R77/02/pp10 Date of release: September 1995 NXP Semiconductors , wideband transistor BFR106 1 handbook, full pagewidth 0.5 2 0.2 2000 MHz 1200 1000 +j 0.2 0 â'"j 5 1500 10 800 0.5 500 1 2 5 10 ➠200 10 100 0.2 5 40 MHz 2 0.5 MEA400 1 IC = 30 mA; VCE = 6 V; Tamb = 25 ï'°C. Zo = 50 , 1200 1000 800 0.5 180° 0.4 0.3 0.2 0.1 500 200 +ϕ 100 40 MHz 0 NXP Semiconductors
Original

MARKING CODE V4

Abstract: MGU320 industrial or intellectual property rights. Printed in The Netherlands R77/02/pp9 Date of release , DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAP64-06W Silicon PIN diode Product specification Supersedes data of 2001 Feb 02 2001 Apr 17 NXP Semiconductors Product specification Silicon PIN diode BAP64-06W FEATURES PINNING High voltage, current controlled , 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Apr 17 REFERENCES IEC JEDEC
NXP Semiconductors
Original
MARKING CODE V4 a/a/DIODE s212 1rd10 DIODE marking S4 06

SOT23 W1P NXP

Abstract: The Netherlands R77/02/pp10 Date of release: November 1992 NXP Semiconductors , Cc (pF) fT (GHz) 0.8 4 0.6 0.4 2 0.2 0 0 10 â'"V CB (V) 0 20 0 , 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE
NXP Semiconductors
Original
SOT23 W1P NXP BFT92 BFR92 BFR92A

BF510

Abstract: BF511 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp9 , CHARACTERISTICS Tamb = 25 C BF510 511 512 513 Gate cut-off current VGS = 0.2 V; VDS = 0 IGSS , 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 December 1997
NXP Semiconductors
Original
BF511 BF512 BF513
Abstract: rights. Printed in The Netherlands R77/02/pp7 Date of release: 2004 Mar 01 Document order Linear Technology
Original
VDD33 VDD25 RJK0305DPB RJK0330DPB LT1129CS8-3 LT1129CS8-5

PMBFJ174

Abstract: patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp7
NXP Semiconductors
Original
PMBFJ174 MAM386 R77/02/8
Abstract: industrial or intellectual property rights. Printed in The Netherlands R77/02/pp10 Date of release NXP Semiconductors
Original
BFS17

W1p TRANSISTOR

Abstract: BFT92 industrial or intellectual property rights. Printed in The Netherlands R77/02/9 Date of release: April
NXP Semiconductors
Original
W1p TRANSISTOR transistor w1P w1p npn SOT23 W1P BFR92 application note w1p 60
Abstract: industrial or intellectual property rights. Printed in The Netherlands R77/02/pp8 Date of release NXP Semiconductors
Original
M3D088 BAP50-04 MAM232

BF996S

Abstract: dual-gate R77/02/pp9 Date of release: September1995 NXP Semiconductors
NXP Semiconductors
Original
BF996S dual-gate marking code cig MAM039

BFS17A

Abstract: MSB003 patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp8
NXP Semiconductors
Original
BFS17A E2p transistor
Abstract: patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp8 NXP Semiconductors
Original
BF994S
Abstract: industrial or intellectual property rights. Printed in The Netherlands R77/02/pp8 Date of release NXP Semiconductors
Original
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