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R5016ANJTL ROHM Semiconductor Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3 PIN visit Digikey Buy

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Part : R5016ANJTL Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $1.59 Price Each : $1.99
Part : R5016ANJTL Supplier : ROHM Manufacturer : Chip1Stop Stock : 100 Best Price : $1.90 Price Each : $3.57
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R5016ANJ Datasheet

Part Manufacturer Description PDF Type
R5016ANJTL ROHM 10V Drive Nch MOSFET; Package: LPTS; Constitution materials list: Packing style: taping; Package quantity: 1000; Original

R5016ANJ

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3 , (pieces) Taping TL 1000 zInner circuit R5016ANJ 1 zAbsolute maximum ratings (Ta , resistance Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit °C/W 1/3 R5016ANJ Transistors , . - Typ. - Max. 1.5 Unit V Conditions IS= 16A, VGS=0V 2/3 R5016ANJ Transistors ROHM
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Abstract: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ Dimensions (Unit : mm) Structure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast , Inner circuit Package Taping TL Code Type 1000 Basic ordering unit (pieces) R5016ANJ , Channel to case Symbol Limits Unit Rth(ch-c) 1.25 °C/W 1/3 R5016ANJ Transistors , =0V Pulsed 2/3 R5016ANJ Transistors Switching characteristics measurement circuit Fig.1 Switching ROHM
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Abstract: 10V Drive Nch MOSFET R5016ANJ Dimensions (Unit : mm) Structure Silicon N-channel MOSFET , simple. 6) Parallel use is easy. 4.5 1000 Basic ordering unit (pieces) R5016ANJ (1) (1 , www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. c 1/5 2009.02 - Rev.A Data Sheet R5016ANJ , /5 2009.02 - Rev.A Data Sheet R5016ANJ Electrical characteristics curves 30 PW = 100us , ) REVERSE DRAIN CURRENT : IDR (A) R5016ANJ Fig.14 Switching Characteristics 1 Ta = 25°C Single ROHM
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00E-6

Abstract: BV500 SPICE PARAMETER R5016ANJ by ROHM TR Div. * R5016ANJ NMOSFET model * Date: 2008/01/28 *D G S .SUBCKT R5016ANJ 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH .186 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=23.244E-6 + RS=10.000E-3 + RD=0 + VTO=3.5882 + RDS=5.0000E6 + TOX=2.0000E-6 + CGSO=1.7n + CGDO=20p + CBD=0 + RG=0 + N , =0.00005 .ENDS R5016ANJ -
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00E-6 BV500 000E-3 0000E6 0000E-3 86E-12 7785E-3
Abstract: 10V Drive Nch MOSFET R5016ANJ Dimensions (Unit : mm) Structure Silicon N-channel MOSFET , simple. 6) Parallel use is easy. 4.5 1000 Basic ordering unit (pieces) R5016ANJ (1) (1 , . 1/5 2009.02 - Rev.A Data Sheet R5016ANJ Electrical characteristics (Ta=25°C) Parameter , rights reserved. 2/5 2009.02 - Rev.A Data Sheet R5016ANJ Electrical characteristics curves , CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) R5016ANJ 1 Ta = 25°C Single Pulse : 1Unit ROHM
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Abstract: R5016ANJ 10V Drive Nch MOSFET R5016ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit , ) Taping TL 1000 (1) (1) Gate (2) Drain (3) Source 1 R5016ANJ (2) (3) 1 Body Diode , 1/5 2009.02 - Rev.A R5016ANJ zElectrical characteristics (Ta=25°C) Parameter Gate-source , 2009.02 - Rev.A R5016ANJ zElectrical characteristics curves 100 Operation in this area is limited by , www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A R5016ANJ REVERSE DRAIN ROHM
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Abstract: 10V Drive Nch MOSFET R5016ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS , ) Taping TL 1000 (1) (1) Gate (2) Drain (3) Source 1 R5016ANJ (2) (3) 1 Body Diode , 1/5 2009.02 - Rev.A R5016ANJ zElectrical characteristics (Ta=25°C) Parameter Gate-source , 2009.02 - Rev.A R5016ANJ zElectrical characteristics curves 100 Operation in this area is limited by , www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A R5016ANJ REVERSE DRAIN ROHM
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bd622d

Abstract: BD623d 40 Nch r5007anj 500 7 0.8 13 LPTS 50 Nch r5009anj 500 9 0.55 21 100 Nch r5016anj 500 16 0.21 50
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OCR Scan
BA6287F BD6221F RPI-441C1E bd622d BD623d BD6222 BA6287 BD621 BD622D BD623D PMR03/10/18/25/50/100

RQW130N03

Abstract: rqw200n03 0.55 21 100 Nch R5016ANJ 500 16 0.21 50 4 P.10 ECOMOS Low Voltage , R6008ANX R5007ANJ R5009ANJ R5016ANJ 10 ID(A) 7 9 13 16 8 7 9 16 SW RDS(on) Typ
ROHM
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RQW130N03 rqw200n03 sp8k10s SP8K10 mosfet rqw 130 RQA200N03 2007-D SC-63 50P5842E

RSD130P10

Abstract: rsd220n06 R4008AND(N) R5007ANJ(N) R5009ANJ(N) R5011ANJ(N) R5013ANJ(N) R5016ANJ(N) R5019ANJ(N , 500 13 0.29 35 R5016ANJ 500 16 0.21 50 500 19 0.18 55 R5021ANJ
ROHM
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RZL025P01 RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P RCD040N25 RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05

sp8k10s

Abstract: SP8K10 (N) R5013ANJ(N) R5016ANJ(N) R5019ANJ(N) R5021ANJ(N) LPT R5007ANX(N) R5009ANX(N , 30 R5013ANJ 500 13 0.29 35 R5016ANJ 500 16 0.21 50 R5019ANJ 500
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RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 R6010ANX RZF013P01 RZR020P01 RW1A013ZP RZL035P01 RW1A020ZP RZQ045P01

RSD130P10

Abstract: RDR005N25 Package Page CPT3 R4008AND(N) R5007ANJ(N) R5009ANJ(N) R5011ANJ(N) R5013ANJ(N) R5016ANJ(N , 500 11 0.38 30 R5013ANJ 500 13 0.29 35 R5016ANJ 500 16 0.21 50
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RSY200N05 RSD050N10 RCX100N25 R5207AND rsy200 RCX330N25 RZF030P01 R0039A 52P6214E