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R5016ANJ Datasheet

Part Manufacturer Description PDF Type Ordering
R5016ANJTL ROHM 10V Drive Nch MOSFET; Package: LPTS; Constitution materials list: Packing style: taping; Package quantity: 1000;
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6 pages,
266.04 Kb

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R5016ANJ

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Abstract: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3 , (pieces) Taping TL 1000 zInner circuit R5016ANJ 1 zAbsolute maximum ratings (Ta , resistance Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit °C/W 1/3 R5016ANJ Transistors , . - Typ. - Max. 1.5 Unit V Conditions IS= 16A, VGS=0V 2/3 R5016ANJ Transistors ... ROHM
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4 pages,
147.67 Kb

R5016ANJ TEXT
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Abstract: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ Dimensions (Unit : mm) Structure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast , Inner circuit Package Taping TL Code Type 1000 Basic ordering unit (pieces) R5016ANJ , Channel to case Symbol Limits Unit Rth(ch-c) 1.25 °C/W 1/3 R5016ANJ Transistors , =0V Pulsed 2/3 R5016ANJ Transistors Switching characteristics measurement circuit Fig.1 Switching ... ROHM
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4 pages,
162.08 Kb

R5016ANJ TEXT
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Abstract: 10V Drive Nch MOSFET R5016ANJ Dimensions (Unit : mm) Structure Silicon N-channel MOSFET , simple. 6) Parallel use is easy. 4.5 1000 Basic ordering unit (pieces) R5016ANJ (1) (1 , www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. c 1/5 2009.02 - Rev.A Data Sheet R5016ANJ , /5 2009.02 - Rev.A Data Sheet R5016ANJ Electrical characteristics curves 30 PW = 100us , ) REVERSE DRAIN CURRENT : IDR (A) R5016ANJ Fig.14 Switching Characteristics 1 Ta = 25°C Single ... ROHM
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6 pages,
196.62 Kb

R5016ANJ TEXT
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Abstract: SPICE PARAMETER R5016ANJ by ROHM TR Div. * R5016ANJ NMOSFET model * Date: 2008/01/28 *D G S .SUBCKT R5016ANJ 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH .186 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 0000E-6 + W=1 + KP=23.244E-6 244E-6 + RS=10.000E-3 000E-3 + RD=0 + VTO=3.5882 + RDS=5.0000E6 0000E6 + TOX=2.0000E-6 0000E-6 + CGSO=1.7n + CGDO=20p + CBD=0 + RG=0 + N , =0.00005 .ENDS R5016ANJ - ... Original
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1 pages,
2.86 Kb

BV500 00E-6 R5016ANJ TEXT
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Abstract: 10V Drive Nch MOSFET R5016ANJ Dimensions (Unit : mm) Structure Silicon N-channel MOSFET , simple. 6) Parallel use is easy. 4.5 1000 Basic ordering unit (pieces) R5016ANJ (1) (1 , . 1/5 2009.02 - Rev.A Data Sheet R5016ANJ Electrical characteristics (Ta=25°C) Parameter , rights reserved. 2/5 2009.02 - Rev.A Data Sheet R5016ANJ Electrical characteristics curves , CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) R5016ANJ 1 Ta = 25°C Single Pulse : 1Unit ... ROHM
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6 pages,
266.04 Kb

R5016ANJ TEXT
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Abstract: R5016ANJ 10V Drive Nch MOSFET R5016ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit , ) Taping TL 1000 (1) (1) Gate (2) Drain (3) Source 1 R5016ANJ (2) (3) 1 Body Diode , 1/5 2009.02 - Rev.A R5016ANJ zElectrical characteristics (Ta=25°C) Parameter Gate-source , 2009.02 - Rev.A R5016ANJ zElectrical characteristics curves 100 Operation in this area is limited by , www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A R5016ANJ REVERSE DRAIN ... ROHM
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6 pages,
266.99 Kb

R5016ANJ TEXT
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Abstract: 10V Drive Nch MOSFET R5016ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS , ) Taping TL 1000 (1) (1) Gate (2) Drain (3) Source 1 R5016ANJ (2) (3) 1 Body Diode , 1/5 2009.02 - Rev.A R5016ANJ zElectrical characteristics (Ta=25°C) Parameter Gate-source , 2009.02 - Rev.A R5016ANJ zElectrical characteristics curves 100 Operation in this area is limited by , www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A R5016ANJ REVERSE DRAIN ... ROHM
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6 pages,
217.66 Kb

R5016ANJ TEXT
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Abstract: 40 Nch r5007anj 500 7 0.8 13 LPTS 50 Nch r5009anj 500 9 0.55 21 100 Nch r5016anj 500 16 0.21 50 ... OCR Scan
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2 pages,
2078.25 Kb

RPI-579 BD6211F BD6222FP BD6210HFP BD6210F bd62 BD6230HFP BD6231 BD6232HFP BD6237FM BD6220HFP BD6387 BD6222 BD6222HFP BD6230F BD621 BD622D BA6287 BD621 BD622D BD6221F BD621 BD622D RPI-441C1E BD621 BD622D BD623d BD621 BD622D bd622d BD621 BD622D BD621 BD621 BD622D BD622D BD623D TEXT
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Abstract: 0.55 21 100 Nch R5016ANJ 500 16 0.21 50 4 P.10 ECOMOS Low Voltage , R6008ANX R6008ANX R5007ANJ R5007ANJ R5009ANJ R5009ANJ R5016ANJ 10 ID(A) 7 9 13 16 8 7 9 16 SW RDS(on) Typ ... ROHM
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20 pages,
3217.1 Kb

SP8M3 mosfet rqa130n03 RSY200N05 RSY300N05 RTR011P02 RRS100N03 SP8M41 RQA180N03 rqw180n03 RQW200 RQW 130 RQA130N03 RQW130 mosfet rqa 130 RQA200N03 mosfet rqw 130 SP8K10 rqw200n03 sp8k10s RQW130N03 TEXT
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Abstract: (N) R5013ANJ R5013ANJ(N) R5016ANJ(N) R5019ANJ R5019ANJ(N) R5021ANJ R5021ANJ(N) LPT R5007ANX R5007ANX(N) R5009ANX R5009ANX(N , 30 R5013ANJ R5013ANJ 500 13 0.29 35 R5016ANJ 500 16 0.21 50 R5019ANJ R5019ANJ 500 ... Original
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20 pages,
1725.48 Kb

R4008AND R5005CNX r6006and SP8K23 RRS050P03 SP8J62 RSY300N04 R5207AND SP8K32 "SP8K10S" R6010ANX rss065n06 RRS075P03 RRR035N03 RRS100P03 SP8M41 RTR011P02 rsd220n06 SP8K10 sp8k10s TEXT
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