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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

R2j diode

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R2j diode

Abstract: transistor bul 39 specification, 0.04%/V line regulation, and 0.01 %/mA load regulation. When used as a zener diode/resistor , . Vout - 5V + (5V/R1 + l0) R2 5V/R1 = 3 l0 load regulation (L.) [(R1 TL/H/7782-' R2J/R1] (L, of LM140LA
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LM140L LM78LXX R2j diode transistor bul 39 LM340LA12 LM340LA-5 LM117L T-5S-U-13 LM140L/LM340L LM140LA/ LM340LA

A723C

Abstract: Volt regulator 723 10 Pin required, an external 6.2 volt zener diode should be connected in series < ) with VoUT. 5-73 This , (Figures 1, 5, 6, 9, 12, (4) ) r R2 -i VOUT-|VREFX R1 +r2j Outputs from +4 to +250 volts (Figure 7) Vout
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A723C MA723DC A723DM Volt regulator 723 10 Pin MA723 adjustable regulated power supply 3 to 12 volt M723M M723HC A723HM
Abstract: VD V,. R0 Rv 2 Vgm 0.4 R gm R,1 BW = 0.4 R, Kâ'ž Kt A « b t . 2ti RV M R2J G , SWITCH BACK EMF FROM SPINDLE MOTOR DIODE FOR RETRACT FUNCTION OTHERWISE SHORT TO SUPPLY Dwg. EP -
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A8932CLW PP-042 MS-013AE

LM78L0S

Abstract: LM78L05ACH National Semiconductor LM78LXX Series 3-Terminal General Description The LM78LXX series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of applications. When used as a ze-ner diode/resistor combination replacement, the LM78LXX usually results in an effective output impedance improvement of two orders of magnitude, and lower quiescent , = 5V + (5V/R1 + Iq) R2 5V/R1 > 3 Iq, load regulation (L,) = [(R1 + R2J/R1] (L, of LM78L0S) 1-166
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LM78L05ACH H03A LM78L12ACZ LM78L05ACM LM78L12ACH LM78L12ACM LM78LXXAC TL/H/7744-7 TL/H/7744-9 TL/H/7744-10 TL/H/7744-12 LM78L05

R2j diode

Abstract: Zener Diode SOD-323 smd code UM , diode capacitance C apacitance of load capacitor Frequency Frequency of input voltage fin fmax fP , voltage. Basically, a silicon capacitance diode has the same construction as any normal alloyed or diffused semi conductor diode: the depletion layer of the PN junction contains only very few free charge , matched groups. Another important parameter of a capacitance diode is the Q factor, which should be high. At high frequencies, the Q factor of a capacitance diode is Q a -2 rtfC totrs where Ctot
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Zener Diode SOD-323 smd code UM r2u zener melf zener diode smd General Semiconductor diodes 89a bly ayz smd

2178BWM

Abstract: R2j diode the N-channel turns on, its on-resistance is low enough to create a short across the output diode. As , significantly lower than a diode forward voltage. This reduces power dissipation and improves efficiency to , turns off and the other turns on. Asa result, inductor current briefly flows through the output diode , swings from V iN to 0.4V below ground, and IL1 flows through the Schottky diode. L1 discharges its energy , VQUT, and the voltage rating of an electrolytic must be 1.4 x VOUT. Output Diode Selection 2
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2178BWM 10 amp H-bridge Mosfet M1C2178 MIC2178 IC2178

philips tea charger 14 pin

Abstract: SMPS battery tea1100 external voltage regulator diode to increase the sensitivity. May 1992 959 â  711002b DCmEflS TM^ â , current has to be sensed by means of a low-ohmic resistor in series with diode D1. The waveform on , the opto-coupler. The maximum current through the opto-coupler diode is 2 mA. The voltage gain of , '. However, by applying a voltage regulator diode in the battery voltage sense-line (see Fig. 7) an increased , position of the Zener diode is shown in Fig.7. The TEA1100 now senses the voltage VR| which is the battery
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TEA1100T philips tea charger 14 pin SMPS battery tea1100 7 pin dil smps power control ic LED Drive smps circuit diagram battery charging through smps PLVA45QA MKA19A

lm780sc

Abstract: National Semiconductor voltage regulator lm7812 = 5V + (5V/R1 + Iq> R2 5V/R1 > 3 Iq, load regulation (L,) = [(R1 + R2J/R1] (Lf of LM340-5). AIq = , regulators, a protection diode connected input to output (Figure 1) may be required if the input is shorted to ground. Without the protection diode, an input short will cause the input to rapidly approach , large output capacitor. The capacitor will then discharge through a large internal input to output diode and parasitic transistors. If the energy released by the capacitor is large enough, this diode, low
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LM781SCT LM7805S lm780sc National Semiconductor voltage regulator lm7812 ic LM7812 LM7800 regulator ic lm7812 LM7812 TO-3 LM140A/LM140/LM340A/LM340/LM7800C LM340A/LM340/LM7800C LM7805 LM7812 LM140A/LM340A TL/H/7781-11
Abstract: Reference The reference regulator of the UC1526 is based on a tem­ perature compensated zener diode. The , * ) R1R2 V o u t â'¢ V ref \ / (â =â ) R1R2 \ â' (^R + R 1 Zj " (^R1 ♦ R2J -
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UC2526 UC3526 UC1S26

CERAMIC DISK CAPACITOR

Abstract: 8th order highpass butterworth filter /R1 + R2/R3+ R2/R4) - VOS3(R2/R3)] x [R4/(R2 + R4)] + VOS2[R2J(R2 + R4)] Vos3 VOSN - VOS2 3 Vqs2 VqS3 , supply reversal during power-up. A clamp diode from each supply to ground will prevent reversal and latch
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LTC1164 LTC1164AM LTC1164M LTC1164AC LTC1164C LTC1164AMJ CERAMIC DISK CAPACITOR 8th order highpass butterworth filter switched capacitor 8th order highpass butterworth LTC1164ACJ 24-LEAD
Abstract: R3 R2 [R4/(R2 + R4)] + V OS2[R2J(R2 + R4)] 3 V qS2 J \/ - VoS3© 4 / T U , to 1/2 supply and it should be bypassed clam p diode from each supply to ground will prevent with a -
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LTC1164CS LTC1164CJ LTC1164ACN LTC1164CN
Abstract: ; V0UT + VD Vd = Catch diode forward voltage ( = 0.5V) f = Switching frequency At f = 100kHz, toN , sh 11+R1 R2 ) LT1074 < R1 R2j (2 .3 5 -0 .8 )(l2 .5 ) 12.5 2 0 -2 .3 5 1+ 2.32 , clamp voltage is approximately one diode drop (= 0 .7 V - 2mV/°C). Note that both the FB pin and the -
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LT1Q74/LT1076 LT1076 LT1074/LT1076 MOTOROLA-MBR745 NICHICON-UPL1C221MRH6 NICHIC0N-UPL1A102MRH6
Abstract: resistance) capacitor is best, mounted close to the device. Optional 16V zener diode recommended in , , an external 16V zener diode placed from gate-to-source is recommended for MOSFET protection. All , (4a). Simply leave the â'Sâ' terminal open. A 16V zener diode from the gate to the source of the , R4 D EN G MIC5158 g R1 EA GND R2J Figure 5. Battery Charger Concept -
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MIC5156/5157/5158 MIC5156 MIC5157 MIC5156/7/8 MIC5156-3 MIC5156-5
Abstract: R i , V 1 , n 2 r2J 4 a oc in r2 (2) As shown in Equation 2, as the , amplifier used in this circuit has a diode on its output. This means for the diodes to conduct, the output , then only the output of the bot­ tom amplifier will be positive. As a result, the diode on the , ­ sulting in the diode on the output of the top amplifier conduct­ ing and delivering the signal from the -
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SM73307 SNOSB88A VIP50
Abstract: parallel diode and a large PMOS switch. The switch carries the entire current load for currents less than 250mA. The parallel diode carries any current in excess of 250mA. Both the switch and the diode have , c input except the PMO.S switch and parallel diode are much smaller. Accordingly, the on resistances of the diode and the switch are each approximately 10i2. Con­ tinuous current should be limited , VBATT and through a diode to V cc, if V c c quickly changes from 5.4V to 4.9V, the capacitor -
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MAX800L/M MAX691ACPE MAX691ACSE MAX691ACWE MAX691AC/D MAX691AEPE

LM3578N

Abstract: LM2578N continuous operation and is generally in the 10 to 30 pF range. D1 should be a Schottky type diode, such as , In Figure 1. C2ilp(Vo-Vln)/(fosoVoVnpp,e). D1 is a Schottky type diode such as a IN5818 or IN5819 , effectively multiplies the sense voltage by (1 + R1/R2). Also, Ri can be replaced by a diode to increase current limit sense voltage to about 800 mV (diode Vf + 110 mV). Current Limit Sense Voltage , turned off. This occurs because diode D1 will then become forward biased, allowing resistor R3 to sink a
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LM1578 LM2578H LM2578N LM3578N PE-64287 LM3578 b227S S7114 LM1578/LM2578/LM3578 TL/H/8711 TL/H/8711-24 1N914 TL/H/8711-25

el2020cn

Abstract: 3131S Information â'" Contd. Summing Amplifier R2J EL2020 Typical Inverting Amplifier Characteristics 10V , Schottky diode clamps from input to supply be used if a fast recovery from large input overloads is
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EL2020CJ EL2020J EL2020J/883B EL2020CM EL2020L el2020cn 3131S BV-1 501 pot 100K smd EL2020/EL2020C EL2020CN MDP0031 MDP0010
Abstract: R2J/R2. For example, at a program med output voltage of 5V, the Error output is guaranteed to go low , OUTPUT OPERATION: REG. #1â'™S V ^ IS PROGRAMMED ONE DIODE DROP ABOVE 5 V. ITS ERROR FLAG BECOMES ACTIVE -
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LP2950/2951 LP2950 LP2951 LP2950/LP2951 0G14E1 1N457

TL 494 CL

Abstract: 230v 12v 1A switching â'¢See Application Hints vâ'žu, = vRef(i+5i) R2J "Drive with TTL-high to shut down. Ground or leave , Operation: Reg. * 1 's Vout is programmed one diode drop above 5V. Its error flag becomes active when Vjn
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TL 494 CL 230v 12v 1A switching tl 3042 LP2950Z lp29s1c lp2950z50 LP2950/A-XX LP2950-5 TL/H/8546 TL/H/8546-15 SD1124 TL/H/8549-16

h bridge sg3524

Abstract: sg3524 inverters schematic diagram , CA3524 O v0 s5 V I / V0R2 \ Imax» R-s^TH+RI + R2J VTH iscs-r;- where Vth = 200 mV 92cs-32677ri Fig. 17 â , stages. {Note: Diode D1 is necessary to prevent reverse emitter-base breakdown of transistor switch Sa).
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CA1524 CA2524 RCA-CA1524 SG1524 SG2524 SG3524 h bridge sg3524 sg3524 inverters schematic diagram isolated converter using SG3524 sg3524 applications CA3162
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