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R2150 Datasheet

Part Manufacturer Description PDF Type
R2150 Syntron Silicon Rectifier Data Book 1971 Scan

R2150

Catalog Datasheet MFG & Type PDF Document Tags

1595E

Abstract: 4 3 2 1 1595E Enclosure 215.00 [8.465] 75.50 [2.972] A 6.75 [.266] D D R21.50 [.846] ENCLOSURE n5.50 [.217] n2.40 AVERAGE WALL THICKNESS 2.00 [.079] [.094] 6.50 [.256] 116.50 [4.587] 130.00 [5.118] ENCLOSURE LID 82.00 [3.228] LID FASTENERS n8.00 10.15 [.400] [.315] C C M3 X 0.5 - 6H x 5.75 THREADED INSERT A 6.85 [.270] 51.10 [2.012] 171.60 [6.756] 201.30 [7.925] SECTION A-A SCALE 3 / 4 ENCLOSURE
Hammond Manufacturing
Original
1595C 1595CBK 1595CGY 1595MS100 1598ATS100

smrr2

Abstract: 13851 SMRR2-S-{50 REEDRELAY REED RE LAYS TT*R2-'-150 GENERAL SPECIFICATIONS VOLTAGE (MAXTMUM SWTTCH|NG) VOLTAGE (MTNTMUM BREAKDOWN) CURRENT (MAXTMUM SWTTCHTNG) (MAX|MUM CURRENT GATTNG CARRY) OR POWER (RESTSTTVE LOAD) (TYPTCAL) CAPACITANCE CONTACTRESESTANCE (MAXTMUM tNtTtAL) (TYPTCAL) OPERATETIME LI F E (MTLLTONSOPEMTTONS OF TTL) OPEMTING TEMPERATURE SHOCK TNSULAflON RESTSTANCE (OHMS) VIBRATION 250VDC 400vDc O.SAMPS 1 . 0A M P 15 WATTS 1 . 0P F O . lO H M S .35 MS 750 .55DEGC TO
-
Original
smrr2 13851 85DEGC 11MSDURATTON 0-2000H2 075LEADSPACING 018DIAMETER

IT4 tube

Abstract: R1 =330, R2=150 331 151 M A N U FA C TU R E R 'S TR A D E M A R K Non-Standard
-
OCR Scan
IT4 tube NBS16J
Abstract: 1= 3 3 0 , R2=150 Resistance Code 331 151 PIN 1 IN DICATOR (M O LD ED INDENT) ''NBS16J -
OCR Scan

C547* transistor

Abstract: BFP420 =22pF C6=22pF R2=150 Ohm R1=10k TrL4 TrL1 RFin C2=0.8pF C1=0.5pF Tr1=BFP420 TrL2
Siemens
Original
BCR400W C547* transistor R3150 SIEMENS BFP420 BFP420 application note RF TRANSISTOR A04 RF amplifier D-81541

C547* transistor

Abstract: transistor C4 016 =1nF C3=22pF C6=22pF R2=150 Ohm R1=1k TrL4 TrL1 RFin C2=1.2pF C1=1.5pF Tr1=BFP420
Siemens
Original
transistor C4 016 C547u SOT343 C5 transistor bfp420 C322pF

AN015

Abstract: BCR400W =22pF R2=150 Ohm R1=10k RFin +3V 3 4 RFout TrL4 TrL1 C2=0.8pF C1
Infineon Technologies
Original
AN015

IN4508

Abstract: DIODE 1N1206 1N1205, 1N1205A, 1N2256 S2145 S2150 R2145 R2150 450 500 1N1206, 1N3966, 1N1206A, 1N2258, IN4508 S2160
-
OCR Scan
DIODE 1N1206 IN3673 DIODE S2145 R2130 R2105 S2110

EN60947-5-1

Abstract: SCHEMA -1jjS 30 x 30 +0,15 Dia. 4 0 R2.15±0,05 Profondeur : 5 Cf. Rem. 2 ci­dessus Modèles 2 conduits D4DS-5jjS 30 x 30 Protection R2.15±0,05 +0,15 56 max. Cf. Rem. 2 ci­dessus
OMRON
Original
EN60947-5-1 GS-ET-15 E76675 D4DS-15FS D4DS-55FS SCHEMA EN60947 montage electrique norme UL csa EN60529 UL508 R9551708

889R-F3ACA-2

Abstract: 802PR-LBAC1 : Load can be switched to Pin 3. R2­150 Inductive Proximity Sensors 802PR 2-Wire AC/DC, Micro
Allen-Bradley
Original
802PR-XBAB1-S6 802PR-XBAH1-S6 889R-F3ACA-2 802PR-LBAC1 802PR-XBAR1-12 802pr-lbaa1 1/2-14NPT 14NPT 802PR-XBAB1 802PR-LBAB1 802PR-LBAB1-S6

STR9012

Abstract: variable output voltage Characteristics of Fine Output Voltage Adjustment STR9005 5.4 STR9012 (Ta=25°C) R1=150 k R2=150 k
Sanken Electric
Original
STR9000 STR9015 variable output voltage variable resistor 500k resistor variable 50k 1M variable resistor STR9012/9015

C547* transistor

Abstract: BCR400W R3=150 Ohm C7=1nF C3=22pF C6=22pF R2=150 Ohm R1=1k RFin +3V 3 RFout TrL4
Infineon Technologies
Original
AN016

acrian RF POWER TRANSISTOR

Abstract: F627-8Q1 diameter) R1, R2.150 '¿-Watt carbon BOARD MATERIAL is 1/16" Teflon glass, 2 oz. Cu
-
OCR Scan
VTV-075 VTV075 VTV150 VTV-075-4 F627-8Q1 acrian RF POWER TRANSISTOR VTV-075-2 F627-8 acrian inc 175-22S T-33-11

dRIVER AMPLIFIER AT 5GHz

Abstract: AH315 current or operating current under small-signal conditions with bias resistor R1=70 off pin 1 and R2=150
WJ Communications
Original
AH315 JESD22-A114 dRIVER AMPLIFIER AT 5GHz AH315-PCB AH315-G JESD22-C101 J-STD-020 1-800-WJ1-4401

AH315-G

Abstract: current under small-signal conditions with bias resistor R1=70 off pin 1 and R2=150 off pin 16. 4
WJ Communications
Original
AH315G

stripline

Abstract: INFINEON SERDES =100 R1 (2) *) depends on SER-output on SER-output Short Striplines (< 3 cm) no R1 R2=150 W
Infineon Technologies
Original
stripline INFINEON SERDES c373 r2 137 D-13623

QAM-64

Abstract: with bias resistor R1=68 off pin 1 and R2=150 off pin 16. 4. Typical parameters reflect performance
WJ Communications
Original
QAM-64 AH314 AH314-G AH314G

STR9005

Abstract: STR9012 STR9005 5.4 STR9012 (Ta=25°C) R1=150 k R2=150 k STR9015 (Ta=25°C) 14 (Ta
-
Original
variable resistor 100k with 3 terminals 303A20

17095

Abstract: QAM 1024, OFDM bias resistor R1=68 off pin 1 and R2=150 off pin 16. Parameter Units Vcc=5V Vcc=6V GHz
WJ Communications
Original
17095 QAM 1024, OFDM AH314-PCB

Transformer DB-1.5

Abstract: L3=560 nH (Coil Inductor) L4=68 nH R2=150  C6=1 uF Vs=8 V S-parameters -5 15
Advanced Semiconductor Business
Original
Transformer DB-1.5 ASL572 MABA-007159

AN1541

Abstract: nh060 =22pF R2=150 Ohm R1=10k RFin +3V 3 4 RFout TrL4 TrL1 C2=0.8pF C1
STMicroelectronics
Original
AN1541 START499 nh060 3C910 L239 SC-70

ABWD

Abstract: marking Z0 SOT23-6 =100 R1 (2) *) depends on SER-output on SER-output Short Striplines (< 3 cm) no R1 R2=150 W
Maxim Integrated Products
Original
ABWD marking Z0 SOT23-6 MAX9504AELT-T MAX9504BELT-T marking AAK SOT23-6 MAX9504A/MAX9504B MAX9504B L622-1 L822-1 L1022-1

AN1541

Abstract: 30mils R3=150 Ohm C7=1nF C3=22pF C6=22pF R2=150 Ohm R1=1k RFin +3V 3 RFout TrL4
STMicroelectronics
Original
30mils L239N transistor 22p transistor k 316
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