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QS5U23TR ROHM Semiconductor Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT5, 5 PIN visit Digikey

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Part : QS5U23TR Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.1271 Price Each : $0.1567
Part : QS5U23TR Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : €0.0901 Price Each : €0.1803
Part : QS5U23TR Supplier : ROHM Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.3230 Price Each : $0.3230
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QS5U23 Datasheet

Part Manufacturer Description PDF Type
QS5U23 ROHM Small switching (-20V, -1.5A) Original
QS5U23 ROHM Small switching Original
QS5U23TR ROHM TRANS MOSFET P-CH 20V 1.5A 5TSMT5 T/R Original
QS5U23TR ROHM Small Switching (-20 V, -1.5 A) Original

QS5U23

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SPICE PARAMETER QS5U23 by ROHM TR Div. * QS5U23 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U23 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=13.581E-6 + RS=10.000E-3 + RD=.11448 + VTO=-1.3037 + RDS=1.0000E6 + TOX=2.0000E-6 + CGSO=388.00E-12 + CGDO=72.201E-12 + CBD , =5.7174E-12 + N=1.1584 + RS=.15244 + IKF=.18244 .ENDS QS5U23 * D_QS5U23 D model (Schottky barrier Diode -
Original
000E-3 0000E6 00E-12 72E-12 0000E-3 7341E-6
Abstract: QS5U23 Transistor Small switching (­20V, ­1.5A) QS5U23 External dimensions (Units : mm) 2.9+0.1 - 1.9 +0.2 - 1.0MAX 0.85+0.1 - 0.30.6 Features 1) The QS5U23 conbines Pch MOSFET , ordering unit (pieces) 3000 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE QS5U23 , MOUNTED ON A CERAMIC BOARD °C 1/4 QS5U23 Transistor Electrical characteristics (Ta , drop Reverse leakage VF IR 2/4 QS5U23 Transistor Electrical characteristic curves 1000 ROHM
Original
Abstract: QS5U23 QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS , 0.7 zFeatures 1) The QS5U23 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package , Basic ordering unit (pieces) QS5U23 2 (1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE 1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE 0.3~0.6 Rev.A 1/4 QS5U23 Transistor , =-0.75A/ VGS=0V 0.36 0.47 100 V V uA IF=0.1A IF=0.5A VR=20V Rev.A 2/4 QS5U23 Transistor ROHM
Original
Abstract: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 Structure Silicon P-channel MOS FET , ) 0.7 (4) (3) 1.6 2.8 Features 1) The QS5U23 combines Pch MOS FET with a Schottky barrier , ) Equivalent circuit Taping (5) (4) TR 3000 QS5U23 2 (1)ANODE (2)SOURCE (3)GATE (4)DRAIN , QS5U23 Transistor Absolute maximum ratings (Ta=25°C) Symbol VDSS VGSS ID IDP 1 IS ISP , )> Forward voltage < Di > Foward voltage drop VF Reverse current IR Rev.A 2/4 QS5U23 ROHM
Original
ONM10
Abstract: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 Structure Silicon P-channel MOS FET , ) 0.7 (4) (3) 1.6 2.8 Features 1) The QS5U23 combines Pch MOS FET with a Schottky barrier , ) Equivalent circuit Taping (5) (4) TR 3000 QS5U23 â—2 (1)ANODE (2)SOURCE (3)GATE (4 , 1/4 QS5U23 Transistor Absolute maximum ratings (Ta=25°C) Symbol VDSS VGSS ID , current IR Rev.A 2/4 QS5U23 Transistor Electrical characteristic curves Ta=125°C 75 ROHM
Original
Abstract: QS5U23 Transistor Small switching (­20V, ­1.5A) QS5U23 External dimensions (Units : mm) 2.9+0.1 - 1.9 +0.2 - 1.0MAX 0.85+0.1 - 0.30.6 Features 1) The QS5U23 conbines Pch MOSFET , ordering unit (pieces) 3000 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE QS5U23 , MOUNTED ON A CERAMIC BOARD °C 1/4 QS5U23 Transistor Electrical characteristics (Ta , drop Reverse leakage VF IR 2/4 QS5U23 Transistor Electrical characteristic curves 1000 ROHM
Original
Abstract: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET , zFeatures 1) The QS5U23 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package. 2) Low , zPackaging specifications Package Type Code Basic ordering unit (pieces) QS5U23 Taping TR 3000 , ) 1 ESD PROTECTION DIODE 2 BODY DIODE 0.3~0.6 Rev.A 1/4 QS5U23 Transistor zAbsolute , =0V 0.36 0.47 100 V V uA IF=0.1A IF=0.5A VR=20V Rev.A 2/4 QS5U23 Transistor zElectrical ROHM
Original
Abstract: 500 300 1.7* QS5U17 QS5U21 TSMT5 QS5U27 QS5U23 +SBD(0.5A) QS5U26 +SBD(1A ROHM
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2SK3541 RJK002N06 2SK3807 2sk3808 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSS140N03 RTM002P02 RTE002P02 2SK3019 RTU002P02
Abstract: QS5U13 Nch+SBD(1A) ­30 ­2 ­ ­ ­ 160 145 95 3.4 QS5U23 ­20 ­1.5 , Nch+SBD(1A) QS5U23 ­20 ­1.5 ­ ­ 260 180 160 ­ 4.2 QS5U26 ­20 ­1.5 ROHM
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RQW130N03 rqw200n03 sp8k10s SP8K10 mosfet rqw 130 RQA200N03 2007-D SC-63 50P5842E
Abstract: FET Series Package QS5U21 QS5U23 TSMT5 QS5U26 QS5U27 QS5U28 TSMT6 QS6U22 QS6U24 -
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2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 RTQ020N03 RTQ035N03 RTQ040P02 RTR030P02 RSR015P03 RSQ025P03
Abstract: Nch+Nch QS5K2 QS5U12 QS5U17 QS5U13 QS5U16 QS5U28 QS5U21 QS5U27 QS5U33 QS5U23 QS5U26 Nch -
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rsd220n06 RTR011P02 RRS100P03 SP8M41 RRS075P03 RRR035N03 RUM002N02 RZM002P02 RUE002N02 RZE002P02 RZF013P01 RZL025P01
Abstract: QS5U23 QS5U33 QS6U22 QS6U24 VDSS(V) MOSFET Polarity VDSS(V) ID(A) 60 2 30 3 ROHM
Original
RSD130P10 RDR005N25 RP1E090 RSD130P RCD040N25 R6015 RUM002N05 RUE002N05 RZR020P01 RW1A013ZP RW1A020ZP RZF030P01
Abstract: :2.5V Package Note) Internal circuit:P.9 Part No. US5U29 TUMT5 US5U30 QS5U21 QS5U23 ROHM
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2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RLA130N03 47P4869E
Abstract: QS5U36 QS5U34 QS5U13 QS5U16 QS5U12 QS5U17 QS5U28 QS5U26 QS5U21 QS5U27 QS5U23 QS5U33 QS6U22 -
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RSY200N05 RSD050N10 RCX100N25 R5207AND rsy200 RCX330N25 R0039A 52P6214E