QCA100BA60 E76102 - Datasheet Archive

 

Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE,

 

TRANSISTOR MODULE Hi- QCA100BA60 QCA100BA60 UL;E76102 E76102 M QCA100BA60 QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction, IC 100A, VCEX 600V Low saturation voltage for higher efficiency. ULTRA HIGH DC current gain hFE. hFE 750 Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Ratings Conditions QCA100BA60 QCA100BA60 Unit VCBO Collector-Base Voltage 600 V VCEX Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage IC IC VBE 2V 10 Collector Current =pw 1ms 100 200 100 Reverse Collector Current IB Base Current PT Total power dissipation V A A 6 A 620 TC 25 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M5 Recommended Value 1.5 2.5 15 25 2.7 28 Terminal M5 Recommended Value 1.5 2.5 15 25 Typical Value 2.7 28 360 Mounting Torque Mass 150 V N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Ratings Conditions ICBO Collector Cut-off Current VCB VCBO IEBO Emitter Cut-off Current VEB VEBO VCEO SUS Unit 1.0 mA 400 mA 450 Collector Emitter Sustaning Voltage Ic 1A D.C. Current Gain Ic 100A VCE 2.5V sat Collector-Emitter Saturation Voltage Ic 100A IB 130mA 2.5 V VBE sat Base-Emitter Saturation Voltage Ic 100A IB 130mA 3.0 V VCEX SUS hFE VCE ton ts tf VECO trr Rth j-c 35 Ic 20A IB2 V 600 5A 750 On Time Switching Time Storage Time Fall Time 2.0 Vcc 300V Ic 100A 2A IB1 0.2A IB2 Collector-Emitter Reverse Voltage Ic Reverse Recovery time Vcc 300V Ic 100A di/dt=100/ s VBE Transistor part Thermal Impedance (junction to case) 8.0 1.8 100A Diode part s 2.0 5V 200 V ns 0.2 0.6 /W QCA100BA60 QCA100BA60 36