Q67220-C1447 OHL00437 OHL01382 OHL01505 OHL01506 OHL00436 D-93049 - Datasheet Archive

 

InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data

 

InGaAlP-High Brightness-Lumineszenzdiode (617 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 µm2 · Typ. Wellenlänge: 617 nm · Typ. Lichtstärke: 150 mcd @ 20 mA (in TO18 Gehäuse) · Typ. Lichtfluß: 3.5 lm @ 70 mA ( in Power TOPLED® Geh.) · Optimized light extraction due to surface structuring and current distribution · Chip size 300 x 300 µm2 · Wavelength (typ.): 617 nm · Typ. luminous intensity: 150 mcd @ 20 mA (TO18 package) · Typ. luminous flux: 3.5 lm @ 70 mA (in Power TOPLED® pack.) Anwendungen Applications · Ampeln · Optischer Indikator · Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays, Werbebeleuchtung, Allgemeinbeleuchtung) · Beleuchtung im Automobilbereich (z.B. Instrumentenbeleuchtung, Bremslichter und Blinklichter) · Ersatz von Kleinst-Glühlampen · Markierungsbeleuchtung · Signal- und Symbolleuchten · Traffic lights · Optical indicators · Backlighting (LCD, cellular phones, switches, keys, displays, illuminated advertising,general lighting) · Automotive lighting (e.g. dashboard backlighting, brake lights, turn signal lamps, etc.) · Substitution of micro incandescent lamps · Marker lights · Signal and symbol luminaire Typ Type Bestellnummer Ordering Code Beschreibung Description F 2000A Q67220-C1447 Q67220-C1447 Rot emittierender Chip mit optimierter Lichtauskopplung durch Oberflächenstrukturierung, Oberseite Anodenanschluss Red emitting chip with optimized light extraction due to surface structuring, top side anode connection 2002-04-05 1 F 2000A Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header without resin, TA = 25 °C) Bezeichnung Parameter Wert1) Value1) Symbol Symbol Einheit Unit min. typ. max. 613 617 623 Dominantwellenlänge Dominant wavelength IF = 20 mA dom Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 20 mA Sperrspannung Reverse voltage VR Durchlaspannung Forward voltage IF = 20 mA VF Lichtstärke4) Luminous intensity4) IF = 20 mA IV 105 150 mcd Lichtfluß4) Luminous flux4) IF = 20 mA V 350 500 mlm Temperaturkoeffizient2) von dom Temperature coefficient2) of dom IF = 50 mA; -10°C < T < 100°C TCdom 0.07 nm/K Temperaturkoeffizient2) von VF Temperature coefficient2) of VF IF = 50 mA; -10°C < T < 100°C TCV -2.9 mV/K 2002-04-05 2 20 nm nm 12 V 2.0 2.2 V F 2000A Mechanische Werte Mechanical values Bezeichnung Parameter Wert1) Value1) Symbol Symbol Einheit Unit min. typ. max. Chipkantenlänge (x-Richtung) Length of chip edge (x-direction) Lx 0.26 0.3 0.34 mm Chipkantenlänge (y-Richtung) Length of chip edge (y-direction) Ly 0.26 0.3 0.34 mm Durchmesser des Wafers Diameter of the wafer D Chiphöhe Die height H 200 220 240 µm Bondpaddurchmesser Diameter of bondpad d 109 114 119 µm Bezeichnung Parameter Wert Value Vorderseitenmetallisierung Metallization frontside Aluminium Aluminum Rückseitenmetallisierung Metallization backside Goldlegierung Gold alloy Trennverfahren Dicing Sägen Sawing Verbindung Chip - Träger Die bonding Kleben Epoxy bonding 2002-04-05 3 100 mm F 2000A f Grenzwert3) ( TA = 25°C) Maximum Ratings3) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Maximaler Betriebstemperaturbereich Maximum operating temperature range Top -40.+100 °C Maximaler Lagertemperaturbereich Maximum storage temperature range Tstg -40.+100 °C Maximaler Durchlaßstrom Maximum forward current IF 70 mA Maximaler Pulsstrom, Maximum surge current tp = 10 µs, D = 0.05 Ipeak 100 mA Maximale Sperrschichttemperatur Maximum junction temperature Tj 125 °C 2002-04-05 4 F 2000A Durchlassstrom2) IF = f (VF) Forward Current TA = 25 °C Relative Lichtstärke2) IV/IV(50mA) = f (IF) Relative Luminous Intensity TA = 25 °C OHL00437 OHL00437 10 1 OHL01382 OHL01382 10 2 IV IF mA I V (50 mA) 10 1 10 0 5 10 0 10 -1 5 10 -1 10 -2 10 -2 5 10 -3 1.3 1.5 1.7 1.9 2.1 10 -3 -1 10 2.3 V 2.5 5 10 0 5 10 1 IF VF Zulassige Impulsbelastbarkeit2) IF = f (tP) Permissible Pulse Handling Capability Duty cycle D = parameter, TA = 25 °Cr Zulassige Impulsbelastbarkeit2) IF = f (tP) Permissible Pulse Handling Capability Duty cycle D = parameter, TA = 85 °Cr OHL01505 OHL01505 0.12 A IF 0.1 0.08 OHL01506 OHL01506 0.12 A IF mA 10 2 0.005 0.05 0.5 0.10 0.08 0.06 0.06 0.04 0.04 0.02 0.005 0.05 0.5 0.02 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 2002-04-05 tp 5 F 2000A Relative spektrale Emission2) Irel = f (), TA= 25 °C, IF = 50 mA Relative Spectral Emission V () = spektrale Augenempfindlichkeit Standard eye response curve OHL00436 OHL00436 100 Irel % 80 V amber 60 40 20 0 400 450 500 550 600 650 nm 2002-04-05 6 700 F 2000A 0.3(0.0118) p-contact 0.22(0.0087) 0.114(0.0045) Maßzeichnung Chip Outlines n-contact Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as follows: mm (inch). 2002-04-05 7 F 2000A Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 D-93049 Regensburg © All Rights Reserved. Attention please! The information generally describes the type of component and shall not be considered as assured characteristics or detailed specification. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our sales organization. Packing Please use the recycling operators known to you. We can also help you ­ get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized by us for such purpose! Critical components5), may only be used in life-support devices or systems6) with the express written approval of OSRAM OS. 1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value. For final electrical testing a spot check with sufficient statistical accuracy is carried out. Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement. 2) Based on data measured in OSRAM Opto Semiconductor's PowerTOPLED® package. They represent typical1) data. 3) Maximum ratings are strongly package dependent and may differ between different packages. The values given represent the chip in an OSRAM OS PowerTOPLED® package and are only valid for this package. 4) Value is referenced to the vendor's measurement system (correlation to customer product(s) is required). 5) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 6) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-04-05 8