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Part Manufacturer Description Datasheet BUY
LT1160CN Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1160CN#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1336IS#TR Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1160IN#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1162CSW#TRPBF Linear Technology LT1162 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1162CSW Linear Technology LT1162 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

Power MOSFET 50V 20A

Catalog Datasheet MFG & Type PDF Document Tags

HUF76639

Abstract: MOSFET 60V 75A . 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET , , N-Channel Logic Level, Power MOSFETs. 20A, 30V, 0.052 Ohm , , Logic LevelUltraFET Power M OSFET. 20A, 60V, 0.056 Ohm, N-Channel , , Logic LevelUltraFET Power MOSFET. 27A, 60V, 0.040 Ohm, N-Channel, Logic LevelUltraFET Power M OSFET. 20A, 60V, 0.037 Ohm, N-Channel, Logic
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OCR Scan

4134 mosfet

Abstract: Power MOSFET 50V 20A 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET. 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET , . . 4-183 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET , . 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET
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OCR Scan

Power MOSFET 50V 20A

Abstract: Power MOSFET 50V 10A =1.0MHz VDS=80V, VGS=5.0V, ID=2.0A VDS=80V, VGS=5.0V, ID=2.0A VDS=80V, VGS=5.0V, ID=2.0A VDD=50V, VGS=5.0V, ID , CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c , enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high , -89 CASE APPLICATIONS: · Load/Power switches · Power supply converter circuits · Battery powered portable , (Steady State) Maximum Pulsed Drain Current, tp=10s Power Dissipation Operating and Storage Junction
Central Semiconductor
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Power MOSFET 50V 20A Power MOSFET 50V 10A mosfet 50v 20a

mosfet vgs 5v vds 100v

Abstract: SSD50N10-18D 43A , 100V , RDS(ON) 18m N-Ch Enhancement Mode Power MOSFET Elektronische , , RDS(ON) 18m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL , =5.5V ID=20A nS VDS=50V ID=20A VGEN=10V RL=2.5 RGEN=6 pF VGS =0 VDS=15 V f =1.0MHz , 43A , 100V , RDS(ON) 18m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http , Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 16-Apr-2013 Rev. A Any changes
SeCoS
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mosfet vgs 5v vds 100v

100v 20a fast recovery power diode

Abstract: Power MOSFET 50V 20A Condition Integral reverse PN diode in The MOSFET IS=1A,VGS=0V VGS = 0V, IDS =20A, dISD / dt = 100A/uS - -0.7 80 160 - Rev.0, Feb. 2012 LTP40N10 N-Channel 100V Power MOSFET IDS=20A Rev.0, Feb. 2012 LTP40N10 N-Channel 100V Power MOSFET VGS=10V IDS=20A VDS=50V IDS=20A , LTP40N10 N-Channel 100V Power MOSFET Features: · Avalanche energy specified · Diode is , Units °C/W Rev.0, Feb. 2012 LTP40N10 N-Channel 100V Power MOSFET Electrical Characteristics
Lite-On Technology
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100v 20a fast recovery power diode MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET

LTP120N06

Abstract: LTP120N06 N-Channel 60V Power MOSFET Features: · Avalanche energy specified · Diode is , LTP120N06 N-Channel 60V Power MOSFET Electrical Characteristics (TA =25Unless Otherwise Specified) Symbol , , IDS = 1A VGS=0V, VDS=30V, f=1MHz VGS=10V, IDS=20A VDD=50V, Drain-Source Breakdown Voltage Gate , . 2012 LTP120N06 N-Channel 60V Power MOSFET Typical Characteristics Power Capability 130 300 , LTP120N06 N-Channel 60V Power MOSFET Typical Characteristics (Cont.) Output Characteristics 100 90 80
Lite-On Technology
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100V, 200 A MOSFET

Abstract: Power MOSFET 50V 20A 100A/uS Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET IDS=20A Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET VGS=10V IDS=20A VDS=50V IDS=20A Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET Rev , LTD35N10 N-Channel 100V Power MOSFET Features: · Avalanche energy specified · Diode is , Units °C/W Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET Electrical Characteristics
Lite-On Technology
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100V, 200 A MOSFET

OPTOCOUPLER 4-PIN

Abstract: ZENER 11V Undervoltage lockout Short-circuit protection Overvoltage protection Nominal Vout Imin 0A to 20A 36V to 75V 1A to 20A 48V nominal Power up Power down Yes Yes 3.3V 80%-110% 0% 1% 0.1% 0.1% 36V to 75V 32V 30V , HV9608DB1 HV9608DB1 3.3V/20A DC/DC Converter for Telecommunication Systems Introduction The , IC includes an integrated voltsecond clamp circuit that limits the duty ratio protecting the power , uF, 100V, Ceramic X7R 1.0 uF, 100V, Ceramic X7R 15uF, 16V, 10%, Tantalum .1 uF, 50V, Ceramic X7R .1
Supertex
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OPTOCOUPLER 4-PIN ZENER 11V SMD7343 IRF6216 pwm lm2904 PA1393 HV9608 A121704 SOIC-16 SMD0805 PA0457 CT319-100
Abstract: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTCâ'™s advanced , Packing Tube 1 of 2 QW-R502-607.a UTT50P10 Preliminary Power MOSFET ABSOLUTE MAXIMUM , Diode Forward Voltage VSD duty cycle d≤2% TJ=25°C, IF=-20A, VR=-50V, Body Diode Reverse Recovery , =-10V, ID=-20A * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free Unisonic Technologies
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UTT50P10L-TA3-T UTT50P10G-TA3-T

UTC 225

Abstract: UTT70P10 UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT70P10 70A, 100V P-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC UTT70P10 is a P-channel power MOSFET using UTC's advanced technology to provide , 1 of 2 QW-R502-725.a UTT70P10 PARAMETER Gate-Source Voltage Preliminary Power MOSFET , , VGS=0V, Pulse test, Drain-Source Diode Forward Voltage VSD t300s, duty cycle d2% TJ=25°C, IF=-20A, VR=-50V , energy in the avalanche. FEATURES * RDS(ON)=0.03 @ VGS=-10V, ID=-20A * High Switching Speed
Unisonic Technologies
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UTC 225 UTT70P10L-TA3-T UTT70P10G-TA3-T

OPTOCOUPLER 4-PIN

Abstract: 1N4148 sod123 2.4uH, 20A PA1393.252 Pulse Eng. 28. M1 N-Channel MosFet, 150V, 29A, 0.054 DPAK , HV9608DB1 3.3V/20A DC/DC Converter for Telecom Systems Introduction The Supertex HV9608 PWM , (HV9608DB1) in an industry standard quarter-brick footprint that provides up to 66W of output power. The , adjustability Vout 80%-110% Minimum load Imin 0% Ripple 0A to 20A 1% or 33mV Line regulation 36V to 75V 0.1% Load regulation 1A to 20A 1% Input voltage 48V nominal 36V
Supertex
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1N4148 sod123 zener 8w PWM DRIVE control 100V 20A SMD-7343 1n4148 any 1N4148 SOD323 75VDC A091004
Abstract: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications , FUJI POWER MOSFET Characteristics Safe operating area ID=f(VDS):Single Pulse,Tc=25°C Allowable , [A] 2 2SK3338-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS , . starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV) Fuji Electric
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mosfet 20a 300v

Abstract: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications , . Typ. Max. Units 0.368 50.0 °C/W °C/W 1 2SK3338-01 FUJI POWER MOSFET , POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-Source On-state , 10 1 10 2 ID [A] 3 2SK3338-01 FUJI POWER MOSFET Transient Thermal impedance
Fuji Electric
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mosfet 20a 300v

L356

Abstract: (starting Tch):Vcc=50V,I(AV) , 2SK3338-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET 11.6±0.2 Applications , Power Dissipation PD=f(Tc) 400 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc , ):ID=10A,VGS=10V 0.8 5.0 4.5 0.7 4.0 0.6 3.5 0.5 max. 0.4 FUJI POWER MOSFET Gate Threshold Voltage
Fuji Electric
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L356
Abstract: (starting Tch):Vcc=50V,I(AV) , 2SK3338-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET 11.6±0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and , ) 400 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 10 300 2 t= 1µs Fuji Electric
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L356

Abstract: 2SK3338-01 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High , . Units 0.368 50.0 °C/W °C/W 1 2SK3338-01 FUJI POWER MOSFET Characteristics Safe , 60 ID [A] 2 2SK3338-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch , 10 0 10 10 1 2 10 ID [A] 3 2SK3338-01 FUJI POWER MOSFET Transient , (starting Tch):Vcc=50V,I(AV)
Fuji Electric
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Abstract: UNISONIC TECHNOLOGIES CO., LTD UT60T03 Power MOSFET 30V, 45A N-CHANNEL ENHANCEMENT MODE , Reel 1 of 5 QW-R502-183.C UT60T03 Power MOSFET PIN CONFIGURATION DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-183.C UT60T03 Power MOSFET , 3.4 1.24 6 UNIT °C/W °C/W 3 of 7 QW-R502-183.C UT60T03 Power MOSFET ELECTRICAL , ns 1.3 23.3 16 V V ns nC 4 of 7 QW-R502-183.C UT60T03 Power MOSFET TYPICAL Unisonic Technologies
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UT60T03L-TF3-T UT60T03G-TF3-T UT60T03L-TF3-R UT60T03G-TF3-R UT60T03L-TN3-R UT60T03G-TN3-R
Abstract: UNISONIC TECHNOLOGIES CO., LTD UT60T03 Power MOSFET 30V, 45A N-CHANNEL ENHANCEMENT MODE ï , ® Power MOSFET MARKING TO-220F / TO-252 / TO-262  DFN-8(5×6) PIN CONFIGURATION Source , QW-R502-183.D UT60T03  Power MOSFET ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise , 7 QW-R502-183.D UT60T03  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless , ,RDS(ON) (mΩ) 10V 8.0V Drain Current,ID (A)  Power MOSFET UNISONIC TECHNOLOGIES CO Unisonic Technologies
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UT60T03L-TQ2-R UT60T03G-TQ2-R UT60T03L-TQ2-T UT60T03G-TQ2-T UT60T03G-K08-5060-R
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., UTT70P10 Preliminary Power MOSFET 7 0 A, 1 0 0 V P-CH AN N EL POWER M OSFET Ì DESCRI PT I ON The UTC UTT70P10 is a P-channel power MOSFET using , QW-R502-725.a UTT70P10 Ì Preliminary Power MOSFET ABSOLU T E M AX I M U M RAT I N GS (TC , =-10V, ID=-20A * High Switching Speed Ì SY M BOL 2.Drain 1.Gate 3.Source Ì ORDERI N G , Continuous ID -70 A Drain Current Pulsed IDM -90 A Power Dissipation PD 225 W Junction Unisonic Technologies
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NT 407F

Abstract: SM0603 ), gate supply requirements and thermal management requirements. The total power loss on MOSFET consists , gate charge for fast switching transition and low-side MOSFET with low rDS(ON). The budget power , . (EQ. 12) where ttr is the combined ON and OFF MOSFET transition times. The total power , = 1.8V, IOUT = 20A EN VOUT SS FIGURE 3. ISL8104EVAL2Z Power and Load Connections , ISL8104 is a simple single-phase PWM controller for a synchronous buck converter with integrated MOSFET
Intersil
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ISL8104EVAL1Z NT 407F SM0603 TB417 35ME330AX SANYO RoHS BSC030N03LS AN1416
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