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Photodiode Datasheet

Part Manufacturer Description PDF Type
Photodiode EMCORE 1 x 4 GaAs PIN Photodiode Array Original

Photodiode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: , 33 S3590-01 Si PIN , 1962 . .GaP , 45 G 1963 . .GaP , 45 G 2 1 1 9 . . , ). 20, 21 S2506-02 Si PIN , 27 S2506-04 Si PIN , 27 S2551 . Si Photodiode -
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GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode GaP photodiode S1087 S1087-01 G1115 G1116 G1117 G1118
Abstract: .24, 25 S5821-02 . .Si PIN , ). .22,23 S1223. . Si PIN .30, 31 S1223-01 . . Si PIN .30, 31 S1226 , .,G aP ,44, 45 G 1962 . .GaP ,44, 45 G 1963 . .GaP -
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schottky photodiode PIN 38 PHOTODIODE Si apd photodiode 800 nm Si PIN PHOTODIODE G1120 G1126-02 G1127-02 S1133 S1133-01 S1133-14
Abstract: MCP6031 Photodiode PICtailTM Plus Demo Board User's Guide © 2008 Microchip Technology Inc , . MCP6031 PHOTODIODE PICtailTM PLUS DEMO BOARD USER'S GUIDE Table of Contents Preface , . 5 1.2 MCP6031 Photodiode PICtailTM Plus Demo Board Kit Contents . 5 1.3 MCP6031 Photodiode PICtailTM Plus Demo Board Description . 6 Chapter 2. Installation , . 9 2.3 MCP6031 Photodiode PICtailTM Plus Demo Board Set-up . 9 2.4 Microchip Technology
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DS21825 AN951 DS00951 dspic demo board dspic schematic PIC32 DS51763A DS51763A-
Abstract: , enhanced performance monitor photodiode. For long reach applications, this eliminates the need for a , eliminates the need for 3 fusion splices as well as a discrete VOA, tap coupler, and monitor photodiode. , be controlled to < ± 0.2 dB using the photodiode. Power stabilization of < ± 0.65 dB can be achieved , Photodiodes Introduction When designing high-performance transmitters for optical communications at 2.5 and , Uniphase has been manufacturing LiNbO3 modulators with integrated photodiodes for bias control of the JDS Uniphase
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JDS uniphase intensity modulator JDSU Modulator linbo3 modulator JDSU x5 jdsu modulator bias long range transmitter block diagram 1-800-498-JDSU 800-5378-JDSU
Abstract: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The , antireflective coating deposited on the photodiode active areas. The low dark current is good for high , Name AK BK BA CA CK DK BG DA EK EA FA FK AA Function Photodiode A Cathode Photodiode B Cathode Photodiode B Anode Photodiode C Anode Photodiode C Cathode Photodiode D Cathode Optoi Microelectronics
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OID10S06
Abstract: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product (S5668 series). The back-illuminated photodiode array is also simple to Hamamatsu
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S11212 D-82211 SE-171 KMPD1128E01
Abstract: 560 MCLK cycles are used for the reset period of trigger photodiode. e.g.) When the f(MCLK) is 20 , Photodiode placed outside the active area to monitor x-ray irradiation General ratings Parameter Pixel , photodiode*3 4 Digital output voltage* Digital output rise time*4 *5 Digital output fall time*4 *5 Image sensor*6 Video data rate Trigger photodiode Start pulse interval*7 Image sensor*8 Integration time Trigger photodiode*9 Image sensor*10 Consumption current Trigger photodiode*11 Symbol f(MCLK) f(DO Hamamatsu Photonics
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S10830 S10835 CMOS image sensor with global shutter 1000 hz cmos Image Sensors x-ray cmos image sensor Photodiode, TO-5, dental x-ray sensor heat maximum S10834 S10831 KMPD1113E04
Abstract: photodiodes Any single-element photodiode with a terminal capacitance below 15 nF can be used. In , photodiodes. For detailed information refer to individual data sheets for our photodiodes. NOTE) C9051 cannot , ), photo IC diodes and reverse-biased photodiodes. 1 Photosensor amplifier I Connection example DC , BNC PLUG (See "Typical connection to photodiode") BNC-BNC COAXIAL CABLE + 5 V INPUT A/D DC LIGHT , the cable. · To improve measurement accuracy, provide a shield around the photodiode. Do not use a Hamamatsu Photonics
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KACC1080E01
Abstract: coupled version, do not connect RF output to a DC voltage greater than the photodiodeâ'™s bias voltage , 2522 Microwave Packaged Photodiode MICROWAVE The 2522 packaged photodiode incorporates a high-speed planar PIN photodiode to provide a highly reliable, high-power photodiode component. This , Highlights Parameter Highly reliable planar photodiode technology Typical Max Units -40 25 , Hermetically sealed Photodiode Bias Voltage - 5 12 V -40 - +85 °C Storage EMCORE
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2522B 2522C 2522B-SF-AC-SA 2522C-SF-AC-SA 2522B-SF-DC-SA 2522C-SF-DC-SA
Abstract: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product (S5668 series). The back-illuminated photodiode array is also simple to handle and easily couples to Hamamatsu
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KMPD1127E01
Abstract: reset period of trigger photodiode. e.g.) When the f(MCLK) is 20 MHz: Integration time = 6608/20 M = , , Vss, MCLK and MST only Global shutter operation Photodiode placed outside the active area to monitor , frequency Trigger photodiode*3 4 Digital output voltage* Digital output rise time*4 *5 Digital output fall time*4 *5 Image sensor*6 Video data rate Trigger photodiode Start pulse interval*7 Image sensor*8 Integration time Trigger photodiode*9 Image sensor*10 Consumption current Trigger photodiode*11 *2: *3: *4: *5 Hamamatsu
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KMPD1114E05
Abstract: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The , antireflective coating deposited on the photodiode active areas. The low dark current is good for high , 10 11 12 13 Name AK BK BA CA CK DK BG DA EK EA FA FK AA Function Photodiode A Cathode Photodiode B Cathode Photodiode B Anode Photodiode C Anode Photodiode C Cathode Photodiode D Optoi Microelectronics
Original
Abstract: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type S11299-021 The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product (S5668 series). The back-illuminated photodiode array is also Hamamatsu
Original
KMPD1128E03
Abstract: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product (S5668 series). The back-illuminated photodiode array is also simple to handle and easily couples to Hamamatsu
Original
KMPD1127E03
Abstract: greater than the photodiodeâ'™s bias voltage. +1 626-293-3400 satcom-sales@emcore.com , 2522 Microwave Packaged Photodiode DATASHEET | NOVEMBER 2014 MICROWAVE The 2522 packaged photodiode incorporates a high-speed planar PIN photodiode to provide a highly reliable, high-power photodiode component. This package is well suited for receiver applications with optical preamplification , Breakdown Voltage (IR = 10 ÂuA) Â"Â" Units Delay Lines Optical Return Loss Photodiode Bias EMCORE
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2522B-SF-AC-FA 2522C-SF-AC-FA 2522B-SF-DC-FA 2522C-SF-DC-FA
Abstract: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product (S5668 series). The back-illuminated photodiode array is also simple to Hamamatsu
Original
Abstract: Photodiode arrays with amplifiers S11865-64G/-128G/-256G S11866-64G-02/-128G-02 Photodiode , photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray , configuration simple. Note that a photodiode with better X-ray tolerance than the previous product is used. A , using a charge amplifier array Low dark current due to zero-bias photodiode operation Integrated , following figure. H Enlarged drawing of photosensitive area Photodiode W P KMPDC0072EA Hamamatsu
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S11865/S11866 S8865/S8866 C9118 S11865-256G S11865-64G S11865-128G
Abstract: conversion coefficient is constant and depends on the given photodiode. Note! Before purchasing the PCB-preamp board, please notify us about the exact photodiode model to be used with the preamplifier, since the preamplifier board should be tuned for the appropriate photodiode type. Principal Scheme , PDs. It works in photovoltaic mode, which means the current generated by photodiode is amplified and , resulting output voltage. That means, if the photocurrent from the photodiode is changing, the converted Roithner LaserTechnik
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photodiode preamplifier
Abstract: photodiode. Because most photodiodes are operated near the bias point where V = 0 this condition will be used to characterize the photodiode. Photodiodes may be represented by the Norton or the Thevenin , will generate one free charge carrier in the theoretical photodiode. This is the basis of the term - , gap energy is "wasted". 351 Application Note Photodiodes Therefore, the photodiode is most , theoretical photodiode shown in Figure 2 must be expanded to make it more like an actual photodiode. Figure Honeywell
Original
IR photodiode noise diode generator QUANTUM CAPACITIVE PN generator circuit simple Photodiode
Abstract: characterize the photodiode. Photodiodes may be represented by the Norton or the Thevenin equivalent circuit , examining equation (2), an equivalent circuit can be constructed which will characterize the photodiode. , charge carrier in the theoretical photodiode. This is the basis of the term - Isc in equation (2), and is , Photodiodes Therefore, the photodiode is most energy efficient at the band gap energy point or long , make it more like an actual photodiode. Figure 5 shows the expanded model of the photodiode. Three -
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photodiode bias circuit
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