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OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP ri BuyFREE Buy
OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP ri BuyFREE Buy
OPT101P Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP ri Buy

Photodiode Datasheet

Part Manufacturer Description PDF Type Ordering
Photodiode EMCORE Corporation 1 x 4 GaAs PIN Photodiode Array
ri

1 pages,
22.01 Kb

Original Buy
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Photodiode

Catalog Datasheet Results Type PDF Document Tags
Abstract: 8 .5 .017 = = = = = = = = Offset Adj Inv In / Photodiode Cathode N-Inv In / Photodiode Anode -V Gain Select Output +V Offset Adj Note: Dimensions in Inches 1 2 3 4 8 7 6 5 .225 .075 .600 OPERATING INSTRUCTIONS: This unit is a high performance photodiode , photodiode responsivity in A/W and the feedback resistance in ohms. The unit is DC-coupled and should be , dia 5mm dia Operating Wavelength 900 ­ 1700 nm Photodiode Shunt Resistance (M) 100. ... Original
datasheet

1 pages,
148.99 Kb

photodiode Responsivity 5mm photodiode photodiode 1100 nm Photodiode datasheet abstract
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Abstract: 8 .5 .017 = = = = = = = = Offset Adj Inv In / Photodiode Cathode N-Inv In / Photodiode Anode -V Gain Select Output +V Offset Adj Note: Dimensions in Inches OPERATING INSTRUCTIONS: 1 2 3 4 8 7 6 5 .225 .075 .600 This unit is a high performance photodiode , photodiode responsivity in A/W and the feedback resistance in ohms. The unit is DC-coupled and should be , 5mm dia 5.8mm x 5.8mm + Operating Wavelength 200 ­ 1000 nm Photodiode Shunt Resistance (M ... Original
datasheet

1 pages,
48.82 Kb

UVS02 UVS-058-E8 UVS-010-E8 uv photodiode photodiode 1000 nm photodiode 650nm UVS-025-E8 5mm photodiode photodiode 5mm 650NM photodiode photodiode 650nm nep Photodiode datasheet abstract
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Abstract: photodiode. The VCSEL can be attached to the photodiode with Au/Sn solder or with conductive epoxy. The photodiode bottom (cathode) can also be attached with Au/Sn solder or with conductive epoxy. The photodiode , SD150-14-002 SD150-14-002 VCSEL Monitor Photodiode Features · · VCSEL Mounting Pad Solderable Metalization Applications The SD150-14-002 SD150-14-002 monitor photodiode was designed to monitor the optical power of an 850 nm VCSEL. The photodiode has a metal pad on its top surface to mount the VCSEL die to ... Original
datasheet

2 pages,
177.98 Kb

monitor photodiode SD150-14-002-S4 TO46 TO46 package ACTIVE LOAD PHOTODIODE vcsel nm VCSEL die Photodiode, nm NEP SD150-14-002 850 photodiode photodiode 1000 nm VCSEL photodiode VCSEL SD150-14-002 abstract
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Abstract: .24, 25 S5821-02 S5821-02 . .Si PIN 24, 25 , ). .22,23 S1223 S1223. . Si PIN .30, 31 S1223-01 S1223-01 . . Si PIN .30, 31 S1226-18BK S1226-18BK. , .,G aP ,44, 45 G 1962 . .GaP ,44, 45 G 1963 . .GaP ,44, 45 G ... OCR Scan
datasheet

2 pages,
191.39 Kb

uv photodiode Si PIN PHOTODIODE Si apd photodiode 800 nm uv photodiode, GaP schottky photodiode photodiode GaP photodiode APD G1115 G1116 G1117 G1118 G1120 G1126-02 G1115 abstract
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Abstract: mi SEME SMP900G-KP SMP900G-KP LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES · HIGH SENSITIVITY · PHOTODIODE ISOLATED FROM PACKAGE · EXCELLENT LINEARITY · LOW NOISE · WIDE , The SMP900G-KP SMP900G-KP is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The , photodiode is electrically isolated from the package, which has a separate earth lead. The larger photodiode , in speed. The photodiode structure has been optimised for high sensitivity, light measurement ... OCR Scan
datasheet

2 pages,
69.18 Kb

rise time of silicon photodiode Photodiode pin sensitivity photodiode SMP900G-KP SMP900G-KP abstract
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Abstract: output of 10mW. ML725B8F ML725B8F is a hermetically sealed device having the photodiode for optical output monitoring. FEATURES -Low threshold and operating current -Built-in monitor photodiode -MQW* active , power Reverse voltage (Laser Diode) Reverse voltage (Photodiode) Forward current (Photodiode) Case , (Photodiode) Dark current (Photodiode) Capacitance (Photodiode) Unit mW V V mA °C °C CW CW ... Original
datasheet

2 pages,
204.36 Kb

photodiode dark current ML725B8F diode 366 nm AlGaAs laser diode mitsubishi thyristors 2 Wavelength Laser Diode photodiode with voltage output 1310nm photodiode photodiode ML725B8F abstract
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Abstract: , 27 S3399 S3399.Si PIN 30, 31 , 1962 . .GaP , 45 G 1963 . .GaP , 45 G 2 1 1 9 . . , ). 20, 21 S2506-02 S2506-02 Si PIN , 27 S2506-04 S2506-04 Si PIN , 27 S2551 S2551 . Si Photodiode ... OCR Scan
datasheet

2 pages,
155.56 Kb

PIN Photodiode GaP photodiode PIN uv photodiode, GaP GaP photodiode APD S1087 S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02 S1133 S1087 abstract
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Abstract: 16 NC NC GND PD2PD2+ NC LDLD- Ground monitor photodiode Input monitor photodiode cathode Input monitor photodiode anode Not connected Pump laser diode anode Pump laser diode anode Pump , connected Ground monitor photodiode Output monitor photodiode anode Output monitor photodiode cathode , PD2+ PD2TECTECLDLD+ Function Input monitor photodiode cathode Input monitor photodiode anode , Output monitor photodiode cathode Output monitor photodiode anode Pump thermoelectric cooler cathode ... Original
datasheet

2 pages,
292.98 Kb

Thermoelectric Cooler edfa booster GAIN EDFA MODULE laser based communication laser diode laser diode application monitor pump PD1 laser pump laser EDFA PIN photodiode ps edfa module amplifer GR-1312CORE GR-1312CORE abstract
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Abstract: Built-in PIN Photodiode Characteristics r x x % x x x x x x x x x x x x x x x x x Rg. 95-1 Photodiode Frequecy Response Characteristic 1 Load res[ I 20 3; [rice RL=50( I -. i I - ­+. ­ . I I 5 10 Photodjode 40 11 reverse voltage VR (V) Fig. 95-2 Photodiode Temperature , Photodiode ~~ Dual power supply (M H A) 96 2 laser q \\ Photodiode n ? S!ngle ... Original
datasheet

2 pages,
70.96 Kb

dual photodiode Photodiode datasheet abstract
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Abstract: PDCA12-68 PDCA12-68 12 Channel InGaAs p-i-n Photodiode REV 09/01 Features Specifications T=25°C 1x12 p-i-n- photodiode array Parameter Sym Min Typ Max Unit Array pitch 250 µm , each photodiode = 1300 nm 0.85 High Speed Response: tr/tf 80 ps = 1550 nm A/W 0.85 , PDCA12-68 PDCA12-68 is a linear 1 x 12 InGaAs photodiode array based on a top-illuminated p-i-n structure. The 68 µm , high-speed response. The photodiode pitch of 250 µm is suitable for coupling to fibre ribbon cable. The ... Original
datasheet

1 pages,
194.15 Kb

CH-6805 PDCA12-68 photodiode linear array Opto Speed SA pin Photodiode 2 GHz photodiode array InGaas PIN photodiode, 1550 inGaAs photodiode 1550 pin photodiode 10 ghz PIN photodiode 850 nm p-i-n photodiode 10 Ghz PIN photodiode ps pin Photodiode 1300 nm PDCA12-68 abstract
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Data Conversion Signal Conditioning Power Management High Frequency & Optical Interface Timing Space & Harsh Environment Home > Applications > Sensor Interface & Bias > Photodiode Interface & Transimpedance Amps Photodiode Interface & Transimpedance Amps
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Data Conversion Signal Conditioning Power Management High Frequency & Optical Interface Timing Space & Harsh Environment Photodiode Interface & Transimpedance Amps Home > Applications > Sensor Interface & Bias > Photodiode Interface & Transimpedance Amps
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Product Details Photodiode Description: A high speed PIN photodiode designed to operate in photodiode chip is moulded in a 5mm half round black infrared transmissive plastic package. This device is
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and current monitoring device optimized for use with avalanche photodiodes. With the provision of a representing the optical power incident upon the photodiode. The photodiode anode may be connected to a Avalanche Photodiode Bias Controller and Wide-range (5 nA - 5 mA) Current Monitor Features Accurately sets avalanche photodiode bias voltage Wide bias range from 6 V to 75 V set using 3 V compatible control interface Monitors photodiode current (5:1 ratio) over 6 decades Linearity 0.5% from
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photodiode and an output photodiode in a bifurcated arrangement. The feedback photodiode captures a LED. The output-side photodiode produces an output signal that is linearly proportional to the amplifier as the input to drive the LED. The feedback photodiode sources current through R1, which is
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Product Details BPW41N BPW41N BPW41N BPW41N Photodiode Detector 13387 Click on the above image for a full view Description: A fast PIN silicon photodiode housed in a compact
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Product Tree Master Product Index Keyword Search Web Links LIGHT TO VOLTAGE Device Name Description Dark Voltage (max) (V) Maximum Output Voltage (typ) (V) Output Voltage (typ) (uV/rtHz) Photodiode Active Area (typ) (mm^2) Rise / Fall Time Monolithic Photodiode and Single-Supply Transimpedance Amplifier 5.2 28 2.58 OPT301 OPT301 OPT301 OPT301 Integrated Photodiode and Amplifier 5.1 90 10.72 *Budgetary
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Texas Instruments 03/07/2002 3.72 Kb HTML light_to_voltage_6.html
Product Tree Master Product Index Keyword Search Web Links LIGHT TO VOLTAGE Device Name Description Dark Voltage (max) (V) Maximum Output Voltage (typ) (V) Output Voltage (typ) (uV/rtHz) Photodiode Active Area (typ) (mm^2) Rise / Fall Time Integrated Photodiode and Amplifier 5.1 90 10.72 OPT101 OPT101 OPT101 OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier 5.2 28 2.58 *Budgetary
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Product Tree Master Product Index Keyword Search Web Links LIGHT TO VOLTAGE Device Name Description Dark Voltage (max) (V) Maximum Output Voltage (typ) (V) Output Voltage (typ) (uV/rtHz) Photodiode Active Area (typ) (mm^2) Rise / Fall Time Integrated Photodiode and Amplifier 5.1 90 10.72 OPT101 OPT101 OPT101 OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier 5.2 28 2.58 *Budgetary
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Product Tree Master Product Index Keyword Search Web Links LIGHT TO VOLTAGE Device Name Description Dark Voltage (max) (V) Maximum Output Voltage (typ) (V) Output Voltage (typ) (uV/rtHz) Photodiode Active Area (typ) (mm^2) Rise / Fall Time Integrated Photodiode and Amplifier 5.1 90 10.72 OPT101 OPT101 OPT101 OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier 5.2 28 2.58 *Budgetary
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