NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ; BVCB0-30 BVCB0-30; lc-2mA max. Pc-30mW max;BVCEO-30Vmax;lc-200uA max; Photo-Sens-1uA/500 Lumen. Pc-30mW max;BVCE0-30Vmax;lc-200uA max; Photo-Sens-4uA/500 Lumen. 88# 89 90 OS 17 PD3L PD6 7 7 7 N Si Ge Gft X1 Pc-30mW ... | OCR Scan |
2 pages, |
SMT102 SD5050 SD5015 TIL78 em transistor l54 SD5014 SD5013 SD5010 SD5012 FPN100 TR20U Sens-100uA MRD200 BVCBO-120 GS614 datasheet abstract |
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| Abstract: 85# 86# OS 13 0S15 OS 16 7 7 7 P N N Ge Si Si X1 X1 X1 Pc-15mW max; BVCB0-30 BVCB0-30; lc-2mA max. Pc-30mW max;BVCEO-30Vmax;lc-200uA max; Photo-Sens-1uA/500 Lumen. Pc-30mW max;BVCE0-30Vmax;lc-200uA max; Photo-Sens-4uA/500 Lumen. 88# 89 90 OS 17 PD3L PD6 7 7 7 N Si Ge Gft X1 Pc-30mW max;BVCEO-30Vmax;lc-200uA max ... | OCR Scan |
4 pages, |
FPM100 GT34 2N300 2SA124 MAS22 OC53 2N1664 OC612 OCP71 photo transistor til78 2N138B 2N534 2n1750 1N4378 MA520 datasheet abstract |
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| Abstract: sl8a 85# 86# OS 13 0S15 OS 16 7 7 7 P N N Ge Si Si X1 X1 X1 Pc-15mW max; BVCB0-30 BVCB0-30; lc-2mA max. Pc-30mW max;BVCEO-30Vmax;lc-200uA max; Photo-Sens-1uA/500 Lumen. Pc-30mW max;BVCE0-30Vmax;lc-200uA max; Photo-Sens-4uA/500 Lumen. 88# 89 90 OS 17 PD3L PD6 7 7 7 N Si Ge Gft X1 Pc-30mW max;BVCEO-30Vmax;lc-200uA max ... | OCR Scan |
4 pages, |
transistor BC x36 1N4378 bc 107 npn transistor BC199B BFY47 D10B1055 D10G1051 D10G1052 photo transistor til78 RT-930H 10G1051 MRD100 TIL78 datasheet abstract |
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| Abstract: 85# 86# OS 13 0S15 OS 16 7 7 7 P N N Ge Si Si X1 X1 X1 Pc-15mW max; BVCB0-30 BVCB0-30; lc-2mA max. Pc-30mW max;BVCEO-30Vmax;lc-200uA max; Photo-Sens-1uA/500 Lumen. Pc-30mW max;BVCE0-30Vmax;lc-200uA max; Photo-Sens-4uA/500 Lumen. 88# 89 90 OS 17 PD3L PD6 7 7 7 N Si Ge Gft X1 Pc-30mW max;BVCEO-30Vmax;lc-200uA max ... | OCR Scan |
4 pages, |
PMT222 400M 2SC430 2SC287 2SC286 sk 110 19 20n photo transistor til78 photo transistor til 78 TIL78 datasheet abstract |
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| Abstract: ; BVCB0-30 BVCB0-30; lc-2mA max. Pc-30mW max;BVCEO-30Vmax;lc-200uA max; Photo-Sens-1uA/500 Lumen. Pc-30mW max;BVCE0-30Vmax;lc-200uA max; Photo-Sens-4uA/500 Lumen. 88# 89 90 OS 17 PD3L PD6 7 7 7 N Si Ge Gft X1 Pc-30mW ... | OCR Scan |
4 pages, |
A498 F.E.T DFNA3-100 FPT100 phototransistor HSC3921 SL360 T018 SP8303 OCP71 3SK33 DG-34 transistor C682A 2SK19Y 2SK19GR 2n318 NPN110 NPN110 abstract |
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| Abstract: u2066 ; BVCB0-30 BVCB0-30; lc-2mA max. Pc-30mW max;BVCEO-30Vmax;lc-200uA max; Photo-Sens-1uA/500 Lumen. Pc-30mW max;BVCE0-30Vmax;lc-200uA max; Photo-Sens-4uA/500 Lumen. 88# 89 90 OS 17 PD3L PD6 7 7 7 N Si Ge Gft X1 Pc-30mW ... | OCR Scan |
6 pages, |
A190 A192 A193 A390 CM602 FPN100 ft06 200S T072 photo transistor til78 til78 phototransistor JAN2N491 phototransistor OCP71 SA2739 TIL78 NPN110 NPN110 abstract |
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| Abstract: MT4S101U MT4S101U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101U MT4S101U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1�1 FEATURES 1.25�1 � Low Noise Figure :NF=0.8dB (@f=2GHz) � High Gain:|S21e| =16.0dB (@f=2GHz) 1 Type name +0.05 0.95 �15 2 +0.1 0.2 �05 3 4 1 2 1.3�1 00.1 P 7 0.15�05 Marking 0.7 2.0�2 2 3 4 1.BASE 2.EMITTER 3.COLLECTOR 4.EMITTER Maximum Ratings (Ta = 25癈) Characteristics ... | Original |
4 pages, |
MT4S101U MT4S101U abstract |
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| Abstract: MT4S101T MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB (@f=2GHz) · High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking Type name 0.8±0.05 2 1 4 2 3 0.2±0.05 · 0.52±0.05 3 0.12±0.05 P 7 4 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base v ... | Original |
4 pages, |
MT4S101T MT4S101T abstract |
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| Abstract: MT4S104T MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2�05 FEATURES 0.9�05 Low Noise Figure :NF=1.25dB (@f=5.2GHz) � High Gain:|S21e| =10.5dB (@f=5.2GHz) 4 3 P 1 1 2 0.8�05 1.2�05 2 0.2�05 � 1 P 3 0.52�05 2 1 1. 2. 3. 4. 4 Maximum Ratings (Ta = 25癈) Characteristics 0.12�05 Marking Symbol Rating Unit Collector-Base voltage V ... | Original |
5 pages, |
TOSHIBA MICROWAVE AMPLIFIER MT4S104T MT4S104T abstract |
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| Abstract: MT4S104T MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2�05 FEATURES 0.9�05 0.52�05 3 4 P1 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings (Ta = 25癈) Characteristics 0.12�05 Marking 0.8�05 Leed (Pb)-free. 2 � 1 High Gain:|S21e|2=10.5dB (@f=5.2GHz) 4 � 3 Low Noise Figure :NF=1.25dB (@f=5.2GHz) 1.2�05 � Symbol Rating ... | Original |
5 pages, |
MT4S104T 60GHz transistor 60Ghz MT4S104T abstract |
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