PTMA180402EL PTMA180402FL H-33265-8 H-34265-8 JESD22-A114F IS-95 PTMA18040 - Datasheet Archive

 

PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ­ 2000 MHz

 

PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ­ 2000 MHz Description The PTMA180402EL PTMA180402EL and PTMA180402FL PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices are offered in thermally-enhanced ceramic packages for cool and reliable operation. PTMA180402EL PTMA180402EL Package H-33265-8 H-33265-8 PTMA180402FL PTMA180402FL Package H-34265-8 H-34265-8 Features · · Typical 2-tone performance, 1960 MHz, 28 V - Output power (PEP) = 50 W at IM3 = ­30 dBc - Efficiency = 33% · Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power · Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F JESD22-A114F High-performance, thermally-enhanced packages, Pb-free and RoHS compliant, with solder-friendly plating 0 Gain -5 25 -10 20 -15 Return Loss 15 10 5 1700 -20 Return Loss (dB) 30 Gain (dB) Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 4 W - Linear gain = 30 dB - Efficiency = 14% - Adjacent channel power = ­53 dBc · 35 On-chip matching, integrated input DC block, 50-ohm input and > 5-ohm output · VDD = 28 V, IDQ1 = 110 mA, IDQ1 = 330 mA Designed for wide RF and modulation bandwidths and low memory effects · Broadband Performance -25 1800 1900 2000 2100 -30 2200 Frequency (MHz) All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device-observe handling precautions! Data Sheet 1 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution RF Characteristics CDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA, POUT = 4 W average, = 1960 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 28.5 30 - dB Drain Efficiency D 13 14 - % ACPR - ­53 ­50 dBc Adjacent Channel Power Ratio DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 - - V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS - - 1.0 µA VDS = 63 V, V GS = 0 V IDSS - - 10.0 µA RDS(on) - 0.21 - IDQ2 = 330 mA VGS 2.0 2.5 3.0 V VGS = 10 V, V DS = 0 V IGSS - - 1.0 µA Final Stage On-state Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ1 = 160 mA, Gate Leakage Current Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS ­0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W 1.0 W/°C TSTG ­40 to +150 °C 1st Stage RJC 5.0 °C/W 2nd Stage RJC 1.1 °C/W Above 25°C derate by Storage Temperature Range Overall Thermal Resistance (TCASE = 70°C) POUT = 40 W, IDQ1 = 160 mA, IDQ2 = 330 mA Ordering Information Type and Version Package Type Package Description Shipping Marking PTMA180402EL PTMA180402EL V1 H-33265-8 H-33265-8 Themally-enhanced, slotted flange Tray PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL V1 H-34265-8 H-34265-8 Themally-enhanced, earless flange Tray PTMA180402FL PTMA180402FL Data Sheet 2 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) CW Performance Two-tone at Selected Frequencies VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 330 mA VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 330 mA Gain 30 30 29 20 = 1930 MHz = 1960 MHz = 1990 MHz 28 10 27 -20 35 -25 30 -30 25 -35 35 40 45 -40 IMD3 15 10 0 50 -45 -50 = 1930 MHz = 1960 MHz = 1990 MHz 5 0 30 Efficiency 20 30 35 Output Power (dBm) 40 -55 -60 45 Output Power, avg. (dBm) IS-95 IS-95 at Selected Frequencies IS-95 IS-95 at Selected Temperatures VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz 25 Efficiency 20 -45 15 -50 10 -55 ACPR 5 -60 -65 Gain (dB), Power Added Efficiency (%) -40 2 4 6 8 35 -45 25 +25ºC ­25ºC +90ºC 15 -50 PAE -55 ACPR 5 -60 -5 0 0 -40 Gain Power Added Efficiency (%) = 1930 MHz = 1960 MHz = 1990 MHz -65 0 10 Output Power (W) Adj. Ch. Power Ratio (dBc) -35 ACPR (dBc) IMD3 (dBc) 40 PAE (%) Efficiency 31 Gain (dB) 40 50 Power Added Efficiency (%) 32 2 4 6 8 10 Output Power, avg. (W) *See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Typical Performance (cont.) Gate ­ Source Voltage vs. Temperature WCDMA Performance VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, Test Mode 1 w/64 DPCH, PAR = 7.5 dB = 1930 MHz = 1960 MHz = 1990 MHz -35 1.05 ACPR (dBc) 1.00 Slope = ­1.3 mV/°C 0.95 20 Efficiency -40 15 10 -45 5 -50 0.90 ACPR 0.85 0 -55 -30 -10 10 30 50 70 90 1 3 5 Temperature (°C) 7 9 11 Output Power (W) EDGE EVM Performance EDGE Modulation Spectrum Performance VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz VDD = 28 V, IDQ! = 160 mA, IDQ2 = 330 mA, = 1960 MHz Efficiency 20 2 15 EVM 10 1 5 0 32 34 36 38 40 42 -55 32 24 400 kHz -65 16 8 600 kHz -85 0 30 44 32 34 36 38 40 42 44 Output Power (dBm) Output Power (dBm) Data Sheet Efficiency -75 0 30 40 -45 ACPR (dB) . 25 Drain Efficiency (%) -35 3 EVM RMS (average %). 30 Efficiency (%) Normalized Gate ­ Source Voltage (threshold), V 1.10 25 Power Added Efficiency (%) -30 1.15 4 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Typical Performance (cont.) Six-carrier TD-SCDMA Drive-up VDD = 28 V, IDQ1 = 230 mA, IDQ2 = 335 mA, = 2017.5 MHz 25 -30 Adj Low er Adj Upper 20 ACPR (dBc) Alt Low er Alt Upper -40 15 Effciency -45 10 -50 Efficiency (%) -35 5 0 -55 31 32 33 34 35 36 37 38 39 Output Power (dBm) Broadband Circuit Impedance Z Load Frequency Z Load D 5.14 ­0.27 4.89 0.67 0.5 ­1.19 0.4 5.59 0.2 0.1 0.0 ­2.13 2200 DTOW ARD LOA GTHS 6.26 1700 MHz 0.1 W LEN A VE - W AV ELE NGT H ST ­2.99 2100 Z Load 7.27 2000 2200 MHz ­3.62 1900 Z0 = 50 8.89 1800 S jX 1700 IN R 0.3 MHz Data Sheet 5 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Reference Circuit VD1 VD2 C1 100µF 50V C2 10µF C3 1µF C4 0.1µF C19 12pF C5 12pF C21 1µF C20 0.1µF C22 10µF C23 100µF 50V l8 DUT 1 2 3 J1 4 l1 PTMA18040 PTMA18040 C31 12pF 8 l2 5 6 7 VG1 C6 10µF C7 1µF C8 0.1µF C9 12pF C11 1µF C12 0.1µF C13 12pF l6 l7 C27 10µF J2 C28 100µF 50V C14 12pF l9 C16 1µF C10 10µF l5 C30 2.7pF C29 2.2pF C15 0.1µF VG2 l4 l3 C17 10µF C18 100µF 50V C24 12pF C25 0.1µF C26 1µF Reference circuit schematic for = 1930 ­ 1990 MHz Circuit Assembly Information DUT PCB PTMA180402EL PTMA180402EL or PTMA180402FL PTMA180402FL 0.76 mm [.030"] thick, r = 3.48 LDMOS IC Rogers RO4350 RO4350 1 oz. copper Microstrip Electrical Characteristics at 1960 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8, l9 Data Sheet 0.224 0.022 0.027 0.035 0.048 0.153 0.046 0.136 , 49.8 , 10.4 , 10.4 , 34.1 , 34.1 , 44.5 , 49.8 , 61.1 20.75 x 1.70 1.85 x 13.00 2.26 x 13.00 3.18 x 3.00 4.29 x 3.00 14.07 x 2.03 4.27 x 1.70 12.83 x 1.19 6 of 11 0.817 0.073 0.089 0.125 0.169 0.554 0.168 0.505 x x x x x x x x 0.067 0.512 0.512 0.118 0.118 0.080 0.067 0.047 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Reference circuit asembly diagram* (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C18, C23, C28 C2, C6, C10, C17, C22, C27 C3, C7, C11, C16, C21, C26 C4, C8, C12, C15, C20, C25 C5, C9, C13, C14, C19, C24, C31 C29 C30 Electrolytic capacitor, 100 µF, 50 V Ceramic capacitor, 10 µF Ceramic capacitor, 1 µF Capacitor, 0.1 µF Ceramic capacitor, 12 pF Digi-Key Murata Digi-Key Digi-Key ATC PCE3718CT-ND PCE3718CT-ND GRM422Y5V106Z050AL GRM422Y5V106Z050AL 445-1411-2-ND 445-1411-2-ND 399-1267-2-ND 399-1267-2-ND 600S120JT 600S120JT Ceramic capacitor, 2.2 pF Ceramic capacitor, 2.7 pF ATC ATC 600S2R2CT 600S2R2CT 600S2R7BT 600S2R7BT *Gerber files for this circuit available on request Data Sheet 7 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Package Specifications Package H-33265-8 H-33265-8 Outline 15.24 [.600] 7.11 [.280] (45° X 2.03 [.08]) 4X R 0.13 [.05] MAX LID C L 2.54±0.51 [.100±.020] 8 10.16 [.400] WINDOW FRAME & LID C L 1 2 3 4 9.78 [.385] FLANGE 15.24±0.51 [.600±.020] 5 6 7 4X R 0.63 [.025] MAX WINDOW FRAME 6X 0.406 [.016] 2X R1.59 [R.063] 0.76 [.030] 2X 4.57 [.180] 4X R1.52 [R.060] 2X 3.48 [.137] 2X 2.21 [.087] 9.55 [.376] REF 10.16 [.400] C L SPH 1.57 [.062] 1.02 [.040] 0.038 [.0015] -Ah-33+34265_POs_33265-8_0801 3.68±.38 [.145±.015] 20.32 [.800] S Diagram Notes-unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 5M-1994. 2. Pins: S = source; see page 11 for complete list and diagram. 3. Lead thickness: 0.127±0.025 [.005±0.001] 4. Gold plating less than 0.25 micron [10 microinch]. 5. All tolerances ± 0.127 [.005] unless specified otherwise. 6. Primary dimensions are mm. Alternate dimensions are inches. Data Sheet 8 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Package Specifications (cont.) Package H-34265-8 H-34265-8 Outline 7.11 [.280] C L (45° X 2.03 [.08]) 2.54±0.51 [.100±.020] 4X R 0.13 [.05] MAX LID 8 10.16 [.400] SQ FLANGE & LID 15.24±0.51 [.600±.020] C L 1 2 3 4 5 6 7 4X R 0.63 [.025] MAX FLANGE 6X 0.406 [.016] 0.76 [.030] 2X 4.57 [.180] 2X 3.48 [.137] 2X 2.21 [.087] 9.55 [.376] REF 10.16 [.400] C L SPH 1.57 [.062] 1.02 [.040] 0.038 [.0015] -Ah-33+34265_POs_34265-8_0801 3.68±.38 [.145±.015] 10.16 [.400] S Diagram Notes-unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 5M-1994. 2. Pins: S = source; see page 11 for complete list and diagram. 3. Lead thickness: 0.127±0.025 [.005±0.001] 4. Gold plating less than 0.25 micron [10 microinch]. 5. All tolerances ± 0.127 [.005] unless specified otherwise. 6. Primary dimensions are mm. Alternate dimensions are inches. Data Sheet 9 of 11 Rev. 08, 2009-08-31 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Package Specifications (cont.) Package H-3X265-8 H-3X265-8 Pin Diagram Thermal FET 1 2 Pin # 3 4 8 5 6 7 NC 1st 2nd a180402efl PD pi nout 2007 12 12 Function S (flange, see Package Outlines) 1 2 3 4 5 6 7 8 Source Drain 1 FET_D FET_G RF In Gate 1 Gate 2 NC RFOut/D2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 08, 2009-08-31 PTMA180402EL/FL PTMA180402EL/FL Confidential, Limited Internal Distribution Revision History: 2009-08-31 2009-04-01, Data Sheet Previous Version: Page Subjects (major changes since last revision) 1 Data Sheet Revised VSWR rating We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS 1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-08-31 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 08, 2009-08-31