PTFB212503EL PTFB212503FL H-34288-4/2 H-33288-6 TL104 TL138 TL120 TL110 TL129 - Datasheet Archive

 

PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ­ 2170 MHz

 

PTFB212503EL PTFB212503EL PTFB212503FL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ­ 2170 MHz Description The PTFB212503EL PTFB212503EL and PTFB212503FL PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. · Broadband internal input and output matching VDD = 30 V, IDQ = 1.85 A, = 2170 MHz, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz · Enhanced for use in DPD error correction systems · Wide video bandwidth -15 40 ACPR IMD (dBc) IMD Up 30 -30 Efficiency 25 -35 20 -40 15 -45 10 -50 Efficiency (%) 35 IMD Low -25 5 -55 0 32 34 36 38 40 42 44 46 48 PTFB212503FL PTFB212503FL Package H-34288-4/2 H-34288-4/2 Features Two-carrier WCDMA Drive-up -20 PTFB212503EL PTFB212503EL Package H-33288-6 H-33288-6 50 Output Power (dBm) · Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = ­33 dBc · Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 % · Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers · Integrated ESD protection: Human Body Model, Class 2 (minimum) · Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power · Pb-free, RoHS-compliant RF Characteristics Two-carrier WCDMA Specifications (not subject to production test-verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 55 W average, 1 = 2160 MHz, 2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps - 18.0 - dB Drain Efficiency hD - 31 - % IMD - ­33 - dBc Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device-observe handling precautions! Data Sheet 1 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503EL PTFB212503FL PTFB212503FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Specifications (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 200 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 - dB Drain Efficiency hD 39 40 - % Intermodulation Distortion IMD - ­30 ­28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 - - V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS - - 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS - - 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) - 0.05 - W Operating Gate Voltage VDS = 30 V, IDQ = 1.85 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS - - 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS ­6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG ­40 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.26 °C/W Ordering Information Type and Version Package Outline Description Shipping PTFB212503EL PTFB212503EL V1 H-33288-6 H-33288-6 Thermally-enhanced slotted flange, single-ended Tray PTFB212503EL PTFB212503EL V1 R250 H-33288-6 H-33288-6 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs PTFB212503FL PTFB212503FL V2 Thermally-enhanced earless flange, single-ended Tray H-34288-4/2 H-34288-4/2 PTFB212503FL PTFB212503FL V2 R250 H-34288-4/2 H-34288-4/2 Data Sheet Thermally-enhanced earless flange, single-ended 2 of 14 Tape & Reel, 250 pcs Rev. 07, 2010-11-04 PTFB212503EL PTFB212503EL PTFB212503FL PTFB212503FL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz VDD = 30 V, IDQ = 1.85 A = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 20 50 19 -25 40 2170 MHz Up -35 2140 MHz Up Gain (dB) IMD (dBc) 2140 MHz Low 2110 MHz Low -40 2110 MHz Up -45 Gain 18 30 17 20 Efficiency 16 -50 -55 15 32 34 36 38 40 42 44 46 48 50 0 33 35 37 CW Power Sweep Gain & Efficiency vs. Output Power 55 45 Gain 35 16 25 Efficiency Gain (dB) / Efficiency (%) 18 15 14 5 42 44 46 48 50 49 51 52 -10 RL 50 -15 45 -20 Efficiency 40 35 -25 -30 IMD 3 30 25 -35 -40 Gain 20 -45 15 54 -50 2070 Output Power (dBm) Data Sheet 47 -5 55 Drain Efficiency (%) 19 40 45 60 65 38 43 VDD = 30 V, IDQ = 1.85 A, PO UT = 100 W 20 15 41 Two-tone Broadband Performance VDD = 30 V, IDQ = 1.85 A, = 2170 MHz 17 39 Output Power (dBm) Output Power (dBm) Gain (dB) 10 Return Loss (dB), IMD (dBc) -30 Efficiency (%) 2170 MHz Low 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) 3 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503EL PTFB212503FL PTFB212503FL Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up Two-tone Drive-up VDD = 30 V, IDQ = 1.85 A, 1 = 2170 MHz, 2 = 2169 MHz VDD = 30 V, IDQ = 1.85 A, 1 = 2170 MHz, 2 = 2169 MHz 45 -25 40 Efficiency -40 25 -45 20 15 IMD 3rd -55 18 30 17 20 16 10 -60 40 Gain Gain (dB) 30 -50 19 35 -35 50 Efficiency Efficiency (%) IMD (dBc) -30 20 10 5 -65 15 0 37 39 41 43 45 47 49 51 53 0 37 55 39 41 43 45 47 49 51 53 55 Output Power, PEP (dBm) Output Power, PEP (dBm) Third Order Intermodulation Distortion vs. Output Power Intermodulation Distortion VDD = 30 V, IDQ = 1.85 A, 1 = 2170 MHz, 2 = 2169 MHz VDD = 30 V, IDQ = 1.85 A, -20 -20 -25 -35 2140 MHz -40 3rd Order -30 2110 MHz IMD (dBc) -30 IMD (dBc) Efficiency (%) -20 2170 MHz -45 -50 5th -40 7th -50 -60 -55 -60 -70 35 40 45 50 55 35 Output Power, PEP (dBm) Data Sheet 40 45 50 55 Output Power, PEP (dBm) 4 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503EL PTFB212503FL PTFB212503FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Gain vs. Output Power CW Performance VDD = 30 V, IDQ = 1.85 A, = 2170 MHz VDD = 30 V, = 2170 MHz 21 60 Efficiency 19 18 IDQ = 2.11 A 50 40 30 Gain 17 20 16 Power Gain (dB) 18 IDQ = 1.85 A 17 10 15 16 0 35 40 45 50 IDQ = 1.30 A 35 55 40 Output Power (dBm) VDD = 30 V, IDQ = 1.85 A, PO UT = 63 W 60 50 -40 40 IM3 30 20 Efficiency -70 10 -80 Gain (dB) / Efficiency (%) IM3 (dBc) -30 60 Drain Efficiency (%) -20 0 33 35 37 39 41 43 45 47 49 0 55 RL 50 -5 -10 45 40 -15 -20 Efficiency 35 -25 IM3 30 -30 25 20 -35 Gain -40 15 -45 10 51 -50 1960 2020 2080 2140 2200 2260 2320 Frequency (MHz) Output Power (dBm) Data Sheet 55 Single-carrier WCDMA, 3GGP Broadband VDD = 30 V, IDQ = 1.85 A = 2170 MHz, 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -60 50 Output Power (dBm) Single-carrier WCDMA -50 45 Return Loss (dB) / IM3 (dBc) Gain (dB) 20 19 Drain Efficiency (%) +25°C +85° C ­10° C 5 of 14 Rev. 07, 2010-11-04 Z Load Z Load G S 2200 MHz 0. 1 Z Source Z Source W Frequency W