PTFB183404F H-37275-6/2 TL151 TL160 TL101 TL167 TL138 TL136 TL120 TL137 TL158 - Datasheet Archive

 

Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 ­ 1880 MHz Description

 

PTFB183404F PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 ­ 1880 MHz Description The PTFB183404F PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183404F PTFB183404F Package H-37275-6/2 H-37275-6/2 Features · Broadband internal input and output matching Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz · Wide video bandwidth 30 -35 IMD Up -40 25 IMD Low 20 -45 15 -50 10 ACPR -55 5 Efficiency -60 Drain Efficiency (%) 35 -30 IMD & ACPR (dBc) -25 0 36 38 40 42 44 46 48 50 · Typical single-carrier WCDMA performance, 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz = ­37 dBc · Increased negative gate-source voltage range for improved performance in Doherty amplifiers · Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power · Integrated ESD protection : Human Body Model, Class 2 (minimum) · Excellent thermal stability 52 · Pb-free and RoHS compliant Average Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, 1 = 1870 MHz, 2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 - dB Drain Efficiency hD 24 25.5 - % Intermodulation Distortion IMD - ­35 ­32 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device-observe handling precautions! Data Sheet 1 of 17 Rev. 03, 2010-07-23 PTFB183404F PTFB183404F Confidential, Limited Internal Distribution RF Characteristics (cont.) Single-carrier WCDMA Performance (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Conditions Symbol 1805 MHz 1842 MHz 1880 MHz (Typ) (Typ) (Typ) 17.1 17.3 17.5 17.0 17.15 17.4 25 24.5 24 Gain POUT (AVG) = 49 dBm Gps POUT (AVG) = 51 dBm Drain Efficiency POUT (AVG) = 49 dBm POUT (AVG) = 51 dBm 31 30 30 Output PAR at 0.01% POUT (AVG) = 49 dBm 6.5 6.5 6.5 POUT (AVG) = 51 dBm 5.5 5.5 5.5 Adjacent Channel Power Ratio POUT (AVG) = 49 dBm ­43 ­42.5 ­41 POUT (AVG) = 51 dBm ­36 ­35 ­34 hD dB ACPR Two-tone Specifications (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, = 1880 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps - 17.5 - dB Drain Efficiency hD - 35 - % Intermodulation Distortion IMD - 30 - dBc Symbol Min Typ Max Unit V(BR)DSS 65 - - V DC Characteristics Characteristic Conditions Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS - - 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS - - 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) - 0.05 - W Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS - - 1.0 µA Data Sheet 2 of 17 Rev. 03, 2010-07-23 PTFB183404F PTFB183404F Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS ­6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG ­40 to +150 °C Thermal Resistance (TCASE = 70°C, 340 W CW) RqJC 0.2 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB183404F PTFB183404F V2 H-37275-6/2 H-37275-6/2 Ceramic open-cavity, earless push-pull Tray PTFB183404F PTFB183404F V2 R250 H-37275-6/2 H-37275-6/2 Ceramic open-cavity, earless push-pull Tape & Reel, 250 pcs Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84MHz VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 1880 Lower -30 1842.5 Lower 19 18 30 1805 Lower Gain (dB) 1805 Upper Gain -45 17 20 16 -40 10 -50 Drain Efficiency (%) 1842.5 Upper -35 IMD (dBc) 40 1880 Upper Efficiency 15 -55 36 38 40 42 44 46 48 50 38 40 42 44 46 48 50 52 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 0 36 52 3 of 17 Rev. 03, 2010-07-23 PTFB183404F PTFB183404F Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz VDD = 30 V, IDQ = 2.6 A, PO UT = 170 W Efficiency 30 -20 -30 IMD3 Gain 20 -40 10 -50 1730 1767.5 1805 1842.5 1880 1917.5 35 -35 30 -40 20 -50 15 -55 10 -60 -65 1955 0 39 41 43 45 47 49 51 53 55 Output Power, PEP (dBm) Two-tone Drive-up (over temp) Two-tone Drive-up (PO UT -max 3rd order IMD @ -30dBc) VDD = 30 V, IDQ = 2.6 A, 1 = 1842.5 MHz, 2 = 1841.5 MHz VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz 40 16 17 20 Efficiency 15 10 Gain (dB) 17 18 30 Gain 19 Efficiency (%) 50 19 Gain (dB) 5 Efficiency Frequency (MHz) 18 25 IMD3 -45 50 40 Gain 30 16 Efficiency 15 20 +85°C +25°C Efficiency (%) 40 40 -30 IMD (dBc) -10 Return Loss (dB), IMD (dBc) Gain (dB) / Efficiency (%) RL 50 -25 Efficiency (%) 0 60 10 -30°C 14 0 40 42 44 46 48 50 52 54 14 56 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 0 39 4 of 17 Rev. 03, 2010-07-23 PTFB183404F PTFB183404F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz -20 -20 1842.5MHz -30 3rd Order -30 1805MHz IMD (dBc) -40 -50 -40 5th -50 7th -60 -70 -60 39 41 43 45 47 49 51 53 55 39 57 41 45 47 49 51 53 55 57 Output Power, PEP (dBm) Output Power, PEP (dBm) Intermodulation Distortion vs. Tone Spacing Single-carrier Drive-up, 1880 MHz VDD = 30 V, IDQ = 2.6 A, = 1880 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz = 1842.5 MHz, PO UT = 330 W (PEP), VDD = 30 V, IDQ = 2.6 A -10 -25 -15 35 -30 IMD Lower IMD Upper -20 30 Efficiency -35 -25 ACP (dBc) -30 IMD (dBc) 43 IMD3 -35 -40 IMD5 -45 -50 -55 -60 1 20 -45 15 -50 10 ACP Low ACP Up 5 -60 10 100 0 36 Two Tone Spacing (MHz) Data Sheet -40 -55 IMD7 25 Drain Efficiency (%) IMD 3rd Order (dBc) 1880MHz 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) 5 of 17 Rev. 03, 2010-07-23 PTFB183404F PTFB183404F Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier Drive-up, 1880 MHz Single-carrier Broadband Performance V DD = 30 V, IDQ = 2.6 A, = 1880 MHz, 0 30 20 -5 -10 RL Gain 20 -15 15 -20 10 -25 PARC 5 -30 0 -35 ACP -5 1693 1768 -40 1843 1918 16 12 0 PARC @ .01% CCDF 8 4 -60 36 38 20 48 50 52 54 20 12 0 PARC @ .01% CCDF -20 -40 ACP 0 PARC & PARC Gain (dB) 20 Efficiency (%) / ACP(dBc) PARC & PARC Gain (dB) 46 40 Gain Efficiency 40 42 44 46 48 50 52 16 20 Efficiency 12 0 PARC @ .01% CCDF 8 4 -20 -40 ACP 0 -60 -60 36 54 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 44 VDD = 30 V, IDQ = 2.6 A, = 1805 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 40 38 42 Single-carrier Drive-up, 1805 MHz Gain 36 40 Average Output Power (dBm) VDD = 30 V, IDQ = 2.6 A, = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 4 -40 0 1993 Single-carrier Drive-up, 1842 MHz 8 -20 ACP Frequency (MHz) 16 20 Efficiency Efficiency (%) / ACP(dBc) 25 40 Gain Efficiency (%) / ACP (dBc) Efficiency PARC & PARC Gain (dB) 35 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz Return Loss (dB) / ACP (dBc) Gain & PARC (dB) / Efficiency (%) VDD = 30 V, IDQ = 2.6 A, PO UT = 125 W 6 of 17 Rev. 03, 2010-07-23 .7 0. 6 5 Z0 = 50 R -> RD G E NE RA T O R jX R jX 1730 1.86 ­4.25 0.55 ­2.78 1768 1.77 ­4.06 0.54 ­2.66 1805 1.68 ­3.88 0.53 ­7.54 1843 1.61 ­3.70 0.52 ­2.43 1880 1.56 ­3.53 0.51 ­2.32 1918 1.51 ­3.37 0.51 ­2.21 1955 1.47 ­3.22 0.5 Z Load 0.4 0.3 ­2.11 1730 MHz 1955 MHz Z Source 1955 MHz 1730 MHz 0.1