NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| PTF080101M | Infineon Technologies | Transistor Mosfet 65V 0.18A 10TSSOP |
5 pages, |
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| PTF080101M | Infineon Technologies | 700 MHz to 1000 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 450.0 - 960.0 MHz; P<sub>1dB</sub> (typ): 10.0 W; Supply Voltage: 28.0 V; |
8 pages, |
Original | |
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| PTF080101MV1 | Infineon Technologies | Transistor Mosfet N-CH 65V 0.18A 10TSSOP |
5 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the 860 to 960 MHz band. This LDMOS device operates at 50% efficiency (P1dB). PTF080101M , Preliminary PTF080101M DC Characteristics Characteristic Conditions Symbol Min Typ Max , PTF080101M* TSSOP-10 TSSOP-10 Molded plastic, SMD PTF080101M *See Infineon distributor for future ... | Original |
5 pages, |
smd transistor infineon PTF080101M infineon smd TSSOP-10 TSSOP10 PTF080101M abstract |
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| Abstract: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 450 , a small footprint. PTF080101M Package PG-RFP-10 PG-RFP-10 Features Gain & Efficiency vs. Output Power , , 2005-12-16 PTF080101M DC Characteristics Characteristic Conditions Symbol Min Typ Max , PTF080101M PG-RFP-10 PG-RFP-10 Molded plastic, SMD 0081 *See Infineon distributor for future availability. ... | Original |
8 pages, |
transistor smd marking ND LM7805 marking us capacitor pf l1 PTF080101M BCP56 smd transistor marking l6 TRANSISTOR circuit of lm7805 C5 MARKING TRANSISTOR LM7805 05 SMD package marking ab l16 LM7805 M SMD smd lm7805 PTF080101M abstract |
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| Abstract: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 450 , a small footprint. PTF080101M Package PG-RFP-10 PG-RFP-10 Features Gain & Efficiency vs. Output Power , , 2009-02-18 PTF080101M DC Characteristics Characteristic Conditions Symbol Min Typ Max , PTF080101M PG-RFP-10 PG-RFP-10 Molded plastic, SMD 0081 *See Infineon distributor for future availability. ... | Original |
8 pages, |
transistor smd marking ND LM7805 LM7805 smd PTF080101M smd lm7805 smd transistor marking C14 BCP56 SMD package marking ab l16 smd transistor marking l7 LM7805 smd 8 pin PG-RFP-10 PTF080101M abstract |
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| Abstract: PTF080101M 860-960 10 19 28 PG-RFP-10 PG-RFP-10 TF210 TF210 104 PTF2104 PTF2104 51F 2110-2170 45 14 , 45 14 28 H-30265-2 H-30265-2 PTF080101M 860-960 10 19 28 PG-RFP-10 PG-RFP-10 TF210 TF210 104 ... | Original |
4 pages, |
TMA210 A211801E ER 2680 PG642 PTF080101M PTF080101S PTF140451E PTF180101S "RF Power Transistors" A0912 datasheet abstract |
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| Abstract: MRF377 MPAL2731M15 BLF7G10-300p RF14 RF20105 RF20105 RF14 3 RF RF RFRF &RF RF, VSAT, MoCA () NIM () () SiGeC QUBiCLDMOS 67SiGe C LNA STBLNAMOSFET GPS LNA LOCATV (Doherty) JESD204A-DACADC JESD204A-DACADC 40% 1200 RF RF RF RF CATV /ISMRF JESD204A- JESD204A- IP LDMOS CMOS RF MMICICSiGe (QUBiC4) C 6500 8 AEC100 AEC100 4 RF14 RF 1963 0.75 1964 1.5 GHzRF 1970 BFR90 BFR90 5 GHzRF 1978 BFQ33 BFQ33 14 GHzRF 1989 1992 ... | Original |
114 pages, |
transistor MRF317 BLF574 BLF888 BLF573 BFG480W Datasheets for BB132 varicap MRF6VP11KH SOT89 marking HY Skyworks LTE RF Transceiver MRF9030L MS1051 bgu7051 GP 809 DIODE RF20105 RF20105 abstract |
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| Abstract: MRF151G MPAL2731M15 BFU610F RF14 RF 20105 NXPRF14 NXPRF14 3 RF NXPRF RF NXPRF RF RF RF VSAT MoCA (Multimedia over Coax Alliance) NIM (Network Interface Module for TV reception) () RF SiGe:C QUBiCLDMOS 4 6 7SiGe:C LNA STBMOSFETLNA GPS LNA LOCATV LNA JESD204A JESD204A DACADC 1200 40% RF RFNXP RF NXPRF /ISM RF NXP JESD204A JESD204A NXP LDMOS CMOS RF MMICICSiGe:C (QUBiC4) NXP 16500 ... | Original |
114 pages, |
RFBFR90 MRF6VP11KH x-band AGC "RF MOSFET" 300W PTF180101 88-108 HSMP3814 transistor MRF317 BFU730F BFG480W TAN250A 100MHz SMD RF Mixer BLF578 fm band 2SK163 NXPRF14 NXPRF14 abstract |
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| Abstract: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 © 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property r ... | Original |
110 pages, |
matsushita tuner vcr u hfet SMD MARKING CODE X-BAND SMD ISOLATOR MRF421 HANDBOOK Cell Phone Jammers project kit RF TRANSISTOR 10GHZ BFG135 2SK163-L gsm mobile jammer BF256B spice model MARKING d5 SOT363 MRF6V2300N datasheet abstract |
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| Abstract: bfp740 RF 12 RF 20096 Experience high-performance analog () RF RFRF (NXP Semiconductors) RF 12RF RF RF RF GPS LNA LO 1-GHz CATV MMIC IF /ISM RF RF www.nxp.com/rfmanual "RF" RF RF 12 John Croteau RF www.nxp.com/rfmanual RF 12 3 1. & 8 1.1 (GPS) _ ... | Original |
96 pages, |
RF NPN POWER TRANSISTOR C 10-12 GHZ SGA8343Z radar 77 ghz sige BLF571 MRF19125 smd code marking NEC rf transistor 2SK163 BFG135 amplifier BFG480W smd code marking 2A sot23 RF LNB C band chipset Dect antenna datasheet abstract |
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| Abstract: Experience high-performance analog NXP's RF Manual makes design work much easier NXP's RF Manual one of the most important reference tools on the market for today's RF designers features our complete range of RF products, from low to high power. With the new 12th edition of the RF Manual, we've made a great design tool even better. We've broadened the scope of the document, adding new material that makes RF design simpler than ever. We've updated the content on RF small-signal pr ... | Original |
97 pages, |
matsushita tuner vcr smd transistor marking WB BFP67-GS08 smd code marking NEC rf transistor BGA7133 BGD502 nxp Standard Marking BLF6G21-10G 2SK163 GP 809 DIODE mesfet lnb blf574 BLF578 datasheet abstract |
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| Abstract: RF 12 RF 20096 NXP RF RF NXP RF RF RF RF 12 RF RF RF GPS LNA LO 1GHz CATV MMIC IF /ISM RF RF NXP web www.nxp.com/rfmanual "RF Manual" "RF 12RF " John Croteau RF web www.nxp.com/rfmanual NXP RF 12 3 1. 8 1.1 (GPS) 8 ... | Original |
96 pages, |
blf177 BGA7133 bga2714 smd code marking NEC g N4 MMIC NXP 12NC ending HSMP3814 BFG480W blf881 GP 809 DIODE Datasheets for BB132 varicap TEA 2025 equivalent 2SK163 radar amplifier s-band datasheet abstract |
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| Abstract: 2006/2007 Published by Infineon Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Communication Edition July 2006 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to ... | Original |
29 pages, |
adm 6999 PEF 22624 E PEF 4268 DVB-C docsis PEF 24628 PEB 3164 PEF 3304 PEF 4365 PSB 21473 F tDA 2055 PEF 22552 E V1.1 PEF 24628 E PEF 22628 PEB 83000 datasheet abstract |
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