PS2605 PS2606 PS2605L PS2606L E72422 PS2605L-E3 PS2606L-E3 P11286EJ4V0DS00

PHOTOCOUPLER PS2605,PS2606,PS2605L,PS2606L HIGH ISOLATION VOLTAGE AC INPUT TYPE 6-PIN PHOTOCOUPLER -NEPOC TM Series- DESCRIPTION

DATA SHEET PHOTOCOUPLER PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L HIGH ISOLATION VOLTAGE AC INPUT TYPE 6-PIN PHOTOCOUPLER -NEPOC TM Series- DESCRIPTION The PS2605 PS2605, PS2606 PS2606, PS2605L PS2605L, PS2606L PS2606L are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). The PS2605L PS2605L, PS2606L PS2606L are lead bending type (Gull-wing) for surface mount. FEATURES · High Isolation voltage (BV = 5 000 Vr.m.s.) · AC input response · High collector to emitter voltage (VCEO = 80 V) · High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) · High current transfer ratio (CTR = 300 % TYP.) · UL approved: File No. E72422 E72422 (S) · Ordering number of taping product: PS2605L-E3 PS2605L-E3, E4, PS2606L-E3 PS2606L-E3, E4 APPLICATIONS · Telephone, Exchange equipment · FAX/OA equipment · AC/DC line interface · Measurement equipment The information in this document is subject to change without notice. Document No. P11286EJ4V0DS00 P11286EJ4V0DS00 (4th edition) Date Published April 1998 NS CP(K) Printed in Japan The mark · shows major revised points. © 1988 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L PACKAGE DIMENSIONS (in millimeters) PS2605 PS2605, PS2606 PS2606 PS2605L PS2605L, PS2606L PS2606L DIP type Lead bending type 10.16 MAX. 10.16 MAX. 3.8 MAX. 0.65 0 to 15° 1.34±0.10 2.54 2.54 MAX. 0.25 M 0.9±0.25 9.60±0.4 2.54 2.54 MAX. 0.50±0.10 0.25 M 1.34 PIN CONNECTIONS (TOP VIEW) PS2605 PS2605, PS2605L PS2605L 6 5 4 PS2606 PS2606, PS2606L PS2606L 6 5 4 1. Anode, Cathode 2. Cathode, Anode 3. NC 4. Emitter 5. Collector 6. Base 1 2 2 3 1. Anode, Cathode 2. Cathode, Anode 3. NC 4. Emitter 5. Collector 6. NC 1 2 3 0.05 to 0.2 6.5 3.8 MAX. 7.62 6.5 2.8 MIN. 4.55 MAX. 7.62 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF ±80 mA PD/°C 1.5 mW/°C PD 150 mW IFP ±1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA PC/°C 1.5 mW/°C PC 150 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA -55 to +100 °C Storage Temperature Tstg -55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 3 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit 1.4 V VF IF = ±10 mA 1.1 Ct V = 0 V, f = 1.0 MHz 60 ICEO VCE = 80 V, IF = 0 mA hFE IC = 2 mA, VCE = 5 V Current Transfer Ratio (IC/IF) CTR IF = ±5 mA, VCE = 5 V 80 *2 CTR1/ CTR2 IC = ±5 mA, VCE = 5 V 0.3 Collector Saturation Voltage VCE (sat) IF = ±10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance Transistor Forward Voltage Terminal Capacitance Diode CI-O V = 0 V, f = 1.0 MHz *3 tr Collector to Emitter Dark Current DC Current Gain Coupled CTR Ratio Rise Time Fall Time *1 *3 *2 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1 IC1 VCE IC2 *3 Test circuit for switching time VCC (PW = 100 µs, Duty cycle = 1/10) IF 50 4 300 600 % 1.0 3.0 700 0.3 VOUT RL = 100 V 0.6 pF 3 µs 5 *1 PS2605 PS2605, PS2605L PS2605L only Pulse input nA 11 tf IF2 100 10 VCC = 5 V, IC = 2 mA, RL = 100 pF PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 200 150 100 50 0 25 50 75 200 150 100 50 0 100 25 50 75 100 Ambient Temperature TA (°C) Ambient Temperature TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 80 TA = +100 °C +75 °C +50 °C 60 Forward Current IF (mA) Forward Current IF (mA) 100 10 +25 °C 0 °C 25 °C 55 °C 1 0.1 40 20 0 20 40 60 0.01 0.6 0.8 1.0 1.2 1.4 80 1.6 1.2 0.8 0.4 1.6 0 0.4 0.8 1.2 1.6 Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 000 100 IF = 50 mA 20 mA 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) Forward Voltage VF (V) VCE = 80 V 40 V 24 V 10 V 5V 100 10 1 0.1 60 40 20 0 20 40 60 Ambient Temperature TA (°C) 80 100 10 10 mA 5 mA 2 mA 1 mA 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) 5 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Normalized Current Transfer Ratio CTR 70 Collector Current IC (mA) 60 50 mA 40 50 mA 20 mA 10 30 IF = 5 mA 20 10 0 2 4 6 8 10 , , , , , 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 °C, IF = 5 mA, VCE = 5 V 0.2 0.0 50 25 0 25 50 75 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (°C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 100 SWITCHING TIME vs. LOAD RESISTANCE 100 200 400 150 Switching Time t (µs) Current Transfer Ratio CTR (%) VCE = 5 V 300 100 200 50 100 VCC = 5 V, 50 IC = 2 mA, Sample 30 CTR = 290 % 10 5 3 ts 1 0 0.5 0.5 1 0.05 0.1 5 10 0.3 10 50 SWITCHING TIME vs. LOAD RESISTANCE 100 500 1 k IF = 5 mA, VCC = 5 V, Sample CTR = 290 % Normalized Gain Gv ts 50 10 tr 5 1 0.1 td 0.5 1 5 10 Load Resistance RL (k) IF = 5 mA, VCE = 5 V 0 tf 100 5k FREQUENCY RESPONSE 5 1 000 500 50 Load Resistance RL () Forward Current IF (mA) Switching Time t (µs) tf tr 0.5 0 6 td 5 RL = 1 k 100 10 15 20 50 25 0.5 1 5 10 50 100 Frequency f (kHz) 300 500 1 000 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L LONG TERM CTR DEGRADATION 1.2 CTR (Relative Value) 1.0 IF = 5 mA 20 mA 0.8 40 mA 0.6 0.4 0.2 0.0 CTR Test condition IF = 5 mA, VCE = 5 V 1 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. 7 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering · Peak reflow temperature 235 °C (package surface temperature) · Time of temperature higher than 210 °C 30 seconds or less · Number of reflows Three · Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 °C (peak temperature) 210 °C to 30 s 120 to 160 °C 60 to 90 s (preheating) Time (s) Caution Please avoid removing the residual flux by water after the first reflow process. Peak temperature 235 °C or below (2) Dip soldering · Temperature 260 °C or below (molten solder temperature) · Time 10 seconds or less · Number of times One · Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 8 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L [MEMO] 9 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L [MEMO] 10 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L [MEMO] 11 PS2605 PS2605,PS2606 PS2606,PS2605L PS2605L,PS2606L PS2606L CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5