PS2502 PS2502L PS2502-1 PS2502L-1 PS2502-2 PS2502-4 PS2502- PS2502L-2 PS2502L-4

HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PS2502 PS2502 -1, -2, -4 PS2502L PS2502L -1, -2, -4 FEATURES DESCRIPTION · HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2502-1 PS2502-1, -2, -4 and PS2502L-1 PS2502L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington phototransistor. PS2502-1 PS2502-1, -2, and -4 are in a plastic DIP (Dual In-line Package) and PS2502L-1 PS2502L-1, -2, and -4 are lead bending type (Gull-wing) for surface mount. · HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP · HIGH SPEED SWITCHING tr, tf = 100 µs TYP APPLICATIONS · LOW COST Interface circuit for various instrumentations and control equipment. · ISOLATED CHANNELS PER EACH PACKAGE · AC LINE / DIGITAL LOGIC · DIGITAL LOGIC / DIGITAL LOGIC · TWISTED PAIR LINE RECEIVER · TELEPHONE / TELEGRAPH LINE RECEIVER · HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL · RELAY CONTACT MONITOR · POWER SUPPLY MONITOR ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER SYMBOLS PS2502-1 PS2502-1, -2, -4, PS2502L-1 PS2502L-1, -2, -4 PARAMETERS UNITS MIN TYP MAX 1.17 1.4 Diode Forward Voltage, IF = 10 mA V IR Reverse Current, VR = 5 V µA C Transistor VF Junction Capacitance, V= 0, f = 1.0 MHz pF Collector to Emitter Dark Current, Vce = 40 V, IF = 0 nA BVCEO Collector to Emitter Breakdown Voltage, IC = 1mA, IB = 0 V BVECO Emitter to Collector Breakdown Voltage, IE = 100 µA, IB = 0 V 6 8 Current Transfer Ratio1, IF = 1mA, VCE = 2 V % 200 2000 Collector Saturation Voltage, IF = 1 mA, IC = 2 mA Isolation Resistance, Vin-out = 1.0 kV V 1011 ICEO Coupled CTR VCE (sat) R1-2 C1-2 5 50 400 40 60 1.0 Isolation Capacitance, V = 0, f = 1.0 MHZ pF 0.5 tr Rise Time2, VCC = 10 V, IC = 10mA, RL = 100 µs 100 tf Fall Time2, VCC = 10 V, IC =10mA, RL = 100 µs 100 Notes: 1. CTR rank (PS2502-1 PS2502-1, PS2502L-1 PS2502L-1 only) K: 2000 % L: 700 to 3400 % M: 200 to 1000 % 2.Test Circuit for Switching Time PULSE INPUT 4 3 8 7 6 5 16 15 14 13 12 11 10 9 ( PW = 1 ms Duty Cycle = 1/10 VCC ) IF VOUT 1 2 1 2 3 4 1 2 3 4 5 6 7 8 PS2502-1 PS2502-1 PS2502-2 PS2502-2 PS2502-4 PS2502-4 50 RL = 100 California Eastern Laboratories PS2502- PS2502- 1, -2, -4, PS2502L PS2502L -1, -2, -4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS Diode IF VR PD PARAMETERS UNITS Forward Current Reverse Voltage Power Dissipation mA V mW/ch RATINGS PS2502 PS2502 -1 PS2502 PS2502 -2, 4 PS2502L-1 PS2502L-1 PS2502L-2 PS2502L-2,4 80 6 150 IF (PEAK) Peak Forward Current A 1 (PW = 100 µs, Duty Cycle 1%) Transistor V 40 VCEO Collector to Emitter Voltage VECO Emitter to Collector Voltage V 6 IC Collector Current mA 200 PC Power Dissipation mW/ch 200 Coupled BV Isolation Voltage2 Vr.m.s. 5000 Tstg Storage Temperature °C -55 to +150 Topt Operating Temperature °C -55 to +100 Tsol Lead Temperature °C 260 (Soldering 10 s) PT Total Power Dissipation mW/ch 250 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput. 80 6 120 1 40 6 160 160 5000 -55 to +150 -55 to +100 260 200 TYPICAL PERFORMANCE CURVES (TA = 25 °C) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 150 PS2502-1 PS2502-1 PS2502L-1 PS2502L-1 100 1.5 mW / °C PS2502-2 PS2502-2 PS2502-4 PS2502-4 PS2502L-2 PS2502L-2 PS2502L-4 PS2502L-4 50 1.2 mW / °C 0 25 50 75 100 125 PS2502-1 PS2502-1 PS2502L-1 PS2502L-1 2 mW /°C PS2502-2 PS2502-2 PS2502-4 PS2502-4 PS2502L-2 PS2502L-2 PS2502L-4 PS2502L-4 100 0 150 20 1.6 mW /°C 40 60 80 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 COLLECTOR CURRENT vs. COLLECTOR to EMITTER VOLTAGE 100 160 5 mA 140 100 °C 60 °C 25 °C 0 °C -25 °C -50 °C 10 5 Collector Current, IC (mA) Forward Current, IF (mA) 50 1 0.5 120 100 80 2 mA 60 40 1 mA 20 IF = 0.5 mA 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Forward Voltage, VF (V) 1.4 1.5 0 2 4 6 8 Collector to Emitter Voltage, VCE (V) 10 PS2502-1 PS2502-1, -2, -4, PS2502L-1 PS2502L-1, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 200 100 10000 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 1000 VCE = 2 V VCE = 5 V VCE = 10 V VCE = 24 V 100 VCE = 40 V 10 10 mA 5 mA 50 1 mA 0.5 mA 10 5 0.2 mA 1 IF = 0.1 mA 0.5 1 0.2 -50 -25 0 25 75 50 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature, TA (°C) Collector Saturation Voltage, VCE(sat) (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 8000 Normalized to 1.0 at TA = 25 °C IF = 1 mA VCE = 2 V 1.2 VCE = 2 V Current Transfer Ratio, CTR (%) CTR, Normalized Output Current 1.4 1.0 0.8 0.6 0.4 0.2 7000 6000 5000 4000 3000 2000 1000 0 -50 -25 0 25 75 50 100 0.1 0.5 1 5 10 Ambient Temperature, TA (°C) Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1000 3000 VCC = 5 V IC = 2 mA CTR = 2280% VCE = 2 V Current Transfer Ratio, CTR (%) Switching Time, t (µs) 500 tr tf 100 td 50 ts 10 5 1 0.05 30 0.1 0.5 1 Load Resistance, RL (K ) 5 2500 2000 1500 1000 500 0 10 50 100 Forward Current, IF (µA) 500 PS2502-1 PS2502-1, -2, -4, PS2502L-1 PS2502L-1, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 10000 VCC = 5 V IF = 1 mA CTR = 2280% IF = 1 mA VCE = 2 V tf 0 1000 Voltage Gain, Av (dB) Switching Time, t (µs) 5000 ts 500 100 50 tr 10 td -5 -10 -15 RL = 1OO -20 5 0.3 1 10 100 LONG TERM CTR DEGRADATION CTR Degradation, (Relative Value) 1.2 IF = 1 mA (TYP.) 1.0 TA = 25 °C 0.8 TA = 60 °C 0.4 0.2 0 10 10 2 10 3 10 4 Operating Time, (h) 10 0.5 1 2 5 10 20 Frequency, f (kHz) Load Resistance, RL () 0.6 0.2 5 10 6 50 100 200 PS2502-1 PS2502-1, -2, -4, PS2502L-1 PS2502L-1, -2, -4 OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-Line Package) 5.1 MAX PS2502-1 PS2502-1 PS2502-2 PS2502-2 4 3 6.5 1 2 3.8 MAX 2.54 1 2 3 4 6.5 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 8 7 6 5 10.2 MAX 3.8 MAX 4.55 MAX. 7.62 4.55 MAX 2.8 MIN. 0.65 2.54 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 2.8 MIN 0.65 0.50 ± 0.10 0.25 M 1.34 0 to 15 ° 0.50 ± 0.10 0.25 M 1.34 0 to 15 ° PS2502-4 PS2502-4 20.3 MAX 16 15 14 13 12 11 10 9 6.5 1 2 3 4 5 6 7 8 3.8 MAX 2.54 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. 7.62 4.55 MAX Anode Cathode Emitter Collector 2.8 MIN 0.65 0.50 ± 0.10 0.25 M 0 to 15° 1.34 OUTLINE DIMENSIONS (Units in mm) Lead Bending type (Gull-wing) PS2502L-1 PS2502L-1 PS2502L-2 PS2502L-2 8 7 6 5 4 3 5.1 MAX 10.2 MAX 1 2 3 4 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 2.54 6.5 3.8 MAX 7.62 2.54 6.5 3.8 MAX 0.05 to 0.2 0.9 ± 0.25 1.34 ± 0.10 0.25 M 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 0.05 to 0.2 0.9 ± 0.25 1.34 ± 0.10 0.25 M 9.60 ± 0.4 9.60 ± 0.4 PS2502L-4 PS2502L-4 16 15 14 13 12 11 10 9 20.3 MAX 1 2 3 4 5 6 7 8 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. 7.62 2.54 6.5 3.8 MAX Anode Cathode Emitter Collector 0.05 to 0.2 1.34 ± 0.10 0.25 M 0.9 ± 0.25 9.60 ± 0.4 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393 · FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 10/31/2001