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Part : PMBT5401 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : PMBT5401 Supplier : Philips Semiconductors Manufacturer : Bristol Electronics Stock : 3,000 Best Price : - Price Each : -
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PMBT5401 Datasheet

Part Manufacturer Description PDF Type
PMBT5401 NXP Semiconductors PMBT5401 - PNP high-voltage transistor - Complement: PMBT5550 ; fT min: 100 MHz; hFE max: 240 ; hFE min: 60 ; IC max: 300 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 150 V Original
PMBT5401 Philips Semiconductors PNP high-voltage transistor Original
PMBT5401 Philips Semiconductors Silicon PNP High Voltage Transistor Original
PMBT5401 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
PMBT5401 N/A Semiconductor Master Cross Reference Guide Scan
PMBT5401,215 NXP Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150V 300MA SOT23 Original
PMBT5401,235 NXP Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150V 300MA SOT23 Original
PMBT5401T/R NXP Semiconductors PNP high-voltage transistor - Complement: PMBT5550 ; fT min: 100 MHz; hFE max: 240 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 150 V Original
PMBT5401TR Philips Semiconductors PNP high-voltage transistor Original
PMBT5401T/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

PMBT5401

Catalog Datasheet MFG & Type PDF Document Tags

PMBT5401

Abstract: PMBT5550 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PMBT5401 PNP high-voltage , Product data sheet PNP high-voltage transistor PMBT5401 FEATURES PINNING · Low current (max , : PMBT5550. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PMBT5401 2 1 *2L 2 Top view , .1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMBT5401 , Product data sheet PNP high-voltage transistor PMBT5401 THERMAL CHARACTERISTICS SYMBOL Rth(j-a
NXP Semiconductors
Original
MAM256 R75/04/

PMBT5401

Abstract: PMBT5550 DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage , Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING · Low current , : PMBT5550. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PMBT5401 2 1 *2L 2 Top view , .1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMBT5401 , Semiconductors Product specification PNP high-voltage transistor PMBT5401 THERMAL CHARACTERISTICS
Philips Semiconductors
Original
SCA76
Abstract: Mouser Electronics Related Product Links 771-PMBT5401-T/R - NXP PMBT5401,215 NXP Semiconductors , DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PMBT5401 PNP high-voltage , NUMBER PMBT5401 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER PMBT5401 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *2L Top view handbook, halfpage PMBT5401 PINNING PIN 1 2 3 base emitter NXP Semiconductors
Original
771-PMBT5401-T/R

BP317

Abstract: PMBT5401 DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage , Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING · Low current , complement: PMBT5550. 1 MARKING 2 1 MARKING CODE(1) TYPE NUMBER Top view 2L PMBT5401 , transistor PMBT5401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal , high-voltage transistor PMBT5401 MGD813 200 handbook, full pagewidth hFE 150 VCE = -5 V
Philips Semiconductors
Original
BP317 SCA63
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5401 PNP high-voltage transistor Product , High voltage (max. 150 V). PMBT5401 PINNING PIN 1 2 base em itter co lle cto r DESCRIPTION , MARKING TYPE NUMBER PMBT5401 2 MARKING CODE«1) Ï2 L T o p V ie w 1 2 MAM256 Note 1 , nsisto r m ounted on an FR4 printed-circuit board. PMBT5401 PARAMETER therm al resistance from ju , iconductors Product specification PNP high-voltage transistor PMBT5401 1999 A pr 15 4 -
OCR Scan
BT5550
Abstract: Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 , MARKING CODE PMBT5401 Top *2 L 2 V ie w MAM256 Note 1. Fig. 1 S im plified , high-voltage transistor PMBT5401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS , PMBT5401 4 Philips S em iconductors P roduct specification PNP high-voltage transistor PMBT5401 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 detail X 0 1 2 -
OCR Scan

PMBT5401

Abstract: Philips Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 300 mA) · High voltage (max. 150 V). PMBT5401 PINNING PIN 1 2 3 base emitter collector , , 3 i _ I, MARKING TYPE NUMBER PMBT5401 1 ' < I 2 T 2 MAM 256 MARKING , specification PNP high-voltage transistor PMBT5401 LIMITING VALUES In accordance with the Absolute , high-voltage transistor PMBT5401 1997 Apr 09 994
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OCR Scan

L7E transistor

Abstract: â I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ] > y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA Collector-base voltage (open emitter) -VC BO max. 160 V Collector-emitter voltage (open base) -VC , 60 to 240 0.150 TOP VIEW bb53T31 â¡OESfl?'! 27b * A P X PMBT5401 N AflER PHILIPS
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OCR Scan
L7E transistor 53T31

PMBT5401

Abstract: transistor marking code lg â I 1^33^31 0D25Ã"7Ã" 33T HAPX N AUER PHILIPS/DISCRETE b7E D PMBT5401 SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA Collector-base voltage (open emitter) -VCBO max. 160 V Collector-emitter voltage (open base) -VCEO max. 150 V Collector , VIEW April 1991 1855 This Material Copyrighted By Its Respective Manufacturer PMBT5401 â  bb53T31
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OCR Scan
transistor marking code lg 100AIA
Abstract: PMBT5401 _ J V_ _ SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor fo r general purposes and especially in telephony applications and encapsulated in a SOT-23 package. QUICK REFERENCE DATA Collector-base voltage (open emitter) -V C B O Collector-em itter voltage (open base) max. 150 V 160 V -V C E O max. Collector current - , 933 PMBT5401 JV RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC -
OCR Scan

p2d smd

Abstract: smd code p2d PZTA42 BSP19 BST39 PXTA42 PNP BF621 BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 , BT2 AT1 AT2 U35 U36 lÿpe No. BSR20 BSR20A BST15 BST16 BST39 BST40 PMBT5401 PMBT5550 PMBT5551
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OCR Scan
p2d smd smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d sot-89 marking H3 BF620 BF622 BF623 BF720 BF722 BF820

SOT89 MARKING 2E

Abstract: SOT-23 MARKING T36 BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 BF623 PZTA93 BSP16 BST16 PMBTA92 , BST40 PMBT5401 PMBT5550 PMBT5551 Code T35 T36 BT1 BT2 ATI AT2 2L type No. PMBTA42 PMBTA43 PMBTA92
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OCR Scan
SOT89 MARKING 2E SOT-23 MARKING T36 SOT89 MARKING 2d bt1 marking SOT89 MARKING DF sot 223 marking code BSP BSR19 BSR19A PZTA43 BF822 BSP20 PXTA92
Abstract: PMBT5401 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)150 V(BR)CBO (V)160 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C American Microsemiconductor
Original

BF420.423

Abstract: BF469 PNP BF421/423 BF486/488 MPSA92/93 2N5415/5416 PH5416 2N5400/5401 BSR20/A PMBT5401 BF470 BF472 BF584
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OCR Scan
BF469 BF420.423 BF420/422 BF483/485/487 MPSA42/43 PN3439/3440 2N5550/5551 BSR19/A

2n3906 sot23

Abstract: 2N5551 SOT23 PMBTA42 PMSTA42 MPSA42 MPSA44 BFV421 BSS63 PMBT5401 PMST5401 2N5401 BF723 MMBTA92
Philips Semiconductors
Original
PMBS3904 PXT4403 PZT2907A PXT2907A PMBT3906 PXT2222A 2n3906 sot23 2N5551 SOT23 PMBT5551, PMST5551 PMBS3904, PMSS3904 PMBT5401, PMST5401 2n3904 sot23 philips SC-73 SC-62 SC-74 BSV52 SC-70
Abstract: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES · Low current (max. 300 mA) · High voltage (max. 160 V). APPLICATIONS · General purpose · Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. MARKING TYPE NUMBER PMBT5551 MARKING CODE pGI Top v ie w PMBT5551 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 1 2 M M 25S 2 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL -
OCR Scan

BSP15

Abstract: BSP19 0.5 50/5 100 f pmbt5401 sot-23 150 160 600 60/240 10/5 0.2 10/1 200 f bf723 sot-223 200 200 50 50/-
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OCR Scan

MAM25S

Abstract: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES · Low current (max. 300 mA) · Low voltage (max. 140 V). PMBT5550 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. - 3 MARKING TYPE NUMBER PMBT5550 - MARKING CODE p IF T O p V ie w 1 Ü2 MAM25S Fig. 1 Simplified outline (SOT23) and symbol. QUICK REFERENCE
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OCR Scan

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE BC856BR BC856W BC856 BC857AW BC857A BC857BW BC857B BC857CW p2G p2H p2L p2T PMBTA56 PMBTA55 PMBT5401
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OCR Scan
SOT89 MARKING CODE 3D sot89 mark code AE 3D sot23 sot23 mark code AE SOT89 MARKING 5G SOT89 marking cec PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C
Abstract: SOT-89 SO T-223 SOT-23 SOT-23 SOT-23 50 120 300 300 300 250 130 BSR20A PMBT5401 -
OCR Scan
S3T31 SQT-23 PZTA92

T-23

Abstract: PZTA42 BSP19 BST39 PXTA42 PNP BF621 BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 , BT2 AT1 AT2 U35 U36 lÿpe No. BSR20 BSR20A BST15 BST16 BST39 BST40 PMBT5401 PMBT5550 PMBT5551
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OCR Scan
T-23 T5550 T5551 T5401

pm2222a

Abstract: BCB47B PNP BF421/423 BF486/488 MPSA92/93 2N5415/5416 PH5416 2N5400/5401 BSR20/A PMBT5401 BF470 BF472 BF584
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OCR Scan
pm2222a BCB47B SOD80C PHILIPS 1N4148 SOD80C BCB47BW BF606A BA582 BA482 BA682 BA683 BA483 BAL74

TXD10K40

Abstract: TXD10K60 PMBT5401 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)150 V(BR)CBO (V)160 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C
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OCR Scan
TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 S3131 BLU52 1N321 BYW56 1N321A BLV97
Showing first 20 results.