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Part : PMBT5401 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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PMBT5401 Datasheet

Part Manufacturer Description PDF Type
PMBT5401 NXP Semiconductors PMBT5401 - PNP high-voltage transistor - Complement: PMBT5550 ; fT min: 100 MHz; hFE max: 240 ; hFE min: 60 ; IC max: 300 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 150 V Original
PMBT5401 Philips Semiconductors PNP high-voltage transistor Original
PMBT5401 Philips Semiconductors Silicon PNP High Voltage Transistor Original
PMBT5401 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
PMBT5401 N/A Semiconductor Master Cross Reference Guide Scan
PMBT5401,215 NXP Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150V 300MA SOT23 Original
PMBT5401,235 NXP Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150V 300MA SOT23 Original
PMBT5401T/R NXP Semiconductors PNP high-voltage transistor - Complement: PMBT5550 ; fT min: 100 MHz; hFE max: 240 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 150 V Original
PMBT5401TR Philips Semiconductors PNP high-voltage transistor Original
PMBT5401T/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

PMBT5401

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PMBT5401 PNP high-voltage , Product data sheet PNP high-voltage transistor PMBT5401 FEATURES PINNING · Low current (max , : PMBT5550. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PMBT5401 2 1 *2L 2 Top view , .1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMBT5401 , Product data sheet PNP high-voltage transistor PMBT5401 THERMAL CHARACTERISTICS SYMBOL Rth(j-a NXP Semiconductors
Original
MAM256 R75/04/
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage , Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING · Low current , : PMBT5550. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PMBT5401 2 1 *2L 2 Top view , .1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMBT5401 , Semiconductors Product specification PNP high-voltage transistor PMBT5401 THERMAL CHARACTERISTICS Philips Semiconductors
Original
SCA76
Abstract: Mouser Electronics Related Product Links 771-PMBT5401-T/R - NXP PMBT5401,215 NXP Semiconductors , DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PMBT5401 PNP high-voltage , NUMBER PMBT5401 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER PMBT5401 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *2L Top view handbook, halfpage PMBT5401 PINNING PIN 1 2 3 base emitter NXP Semiconductors
Original
771-PMBT5401-T/R
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage , Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING · Low current , complement: PMBT5550. 1 MARKING 2 1 MARKING CODE(1) TYPE NUMBER Top view 2L PMBT5401 , transistor PMBT5401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal , high-voltage transistor PMBT5401 MGD813 200 handbook, full pagewidth hFE 150 VCE = -5 V Philips Semiconductors
Original
BP317 SCA63
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5401 PNP high-voltage transistor Product , High voltage (max. 150 V). PMBT5401 PINNING PIN 1 2 base em itter co lle cto r DESCRIPTION , MARKING TYPE NUMBER PMBT5401 2 MARKING CODE«1) Ï2 L T o p V ie w 1 2 MAM256 Note 1 , nsisto r m ounted on an FR4 printed-circuit board. PMBT5401 PARAMETER therm al resistance from ju , iconductors Product specification PNP high-voltage transistor PMBT5401 1999 A pr 15 4 -
OCR Scan
BT5550
Abstract: Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 , MARKING CODE PMBT5401 Top *2 L 2 V ie w MAM256 Note 1. Fig. 1 S im plified , high-voltage transistor PMBT5401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS , PMBT5401 4 Philips S em iconductors P roduct specification PNP high-voltage transistor PMBT5401 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 detail X 0 1 2 -
OCR Scan
Abstract: Philips Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 300 mA) · High voltage (max. 150 V). PMBT5401 PINNING PIN 1 2 3 base emitter collector , , 3 i _ I, MARKING TYPE NUMBER PMBT5401 1 ' < I 2 T 2 MAM 256 MARKING , specification PNP high-voltage transistor PMBT5401 LIMITING VALUES In accordance with the Absolute , high-voltage transistor PMBT5401 1997 Apr 09 994 -
OCR Scan
Abstract: â I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ] > y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA Collector-base voltage (open emitter) -VC BO max. 160 V Collector-emitter voltage (open base) -VC , 60 to 240 0.150 TOP VIEW bb53T31 â¡OESfl?'! 27b * A P X PMBT5401 N AflER PHILIPS -
OCR Scan
L7E transistor 53T31
Abstract: â I 1^33^31 0D25Ã"7Ã" 33T HAPX N AUER PHILIPS/DISCRETE b7E D PMBT5401 SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA Collector-base voltage (open emitter) -VCBO max. 160 V Collector-emitter voltage (open base) -VCEO max. 150 V Collector , VIEW April 1991 1855 This Material Copyrighted By Its Respective Manufacturer PMBT5401 â  bb53T31 -
OCR Scan
transistor marking code lg 100AIA
Abstract: PMBT5401 _ J V_ _ SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor fo r general purposes and especially in telephony applications and encapsulated in a SOT-23 package. QUICK REFERENCE DATA Collector-base voltage (open emitter) -V C B O Collector-em itter voltage (open base) max. 150 V 160 V -V C E O max. Collector current - , 933 PMBT5401 JV RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC -
OCR Scan
Abstract: PZTA42 BSP19 BST39 PXTA42 PNP BF621 BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 , BT2 AT1 AT2 U35 U36 lÿpe No. BSR20 BSR20A BST15 BST16 BST39 BST40 PMBT5401 PMBT5550 PMBT5551 -
OCR Scan
p2d smd smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d SOT-23 MARKING T36 BF620 BF622 BF623 BF720 BF722 BF820
Abstract: BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 BF623 PZTA93 BSP16 BST16 PMBTA92 , BST40 PMBT5401 PMBT5550 PMBT5551 Code T35 T36 BT1 BT2 ATI AT2 2L type No. PMBTA42 PMBTA43 PMBTA92 -
OCR Scan
SOT89 MARKING 2E SOT89 MARKING 2d bt1 marking MARKING CODE 2e sot-89 DA SOT-89 NPN sot 23 marking code 2l BSR19 BSR19A PZTA43 BF822 BSP20 PXTA92
Abstract: PMBT5401 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)150 V(BR)CBO (V)160 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C American Microsemiconductor
Original
Abstract: PNP BF421/423 BF486/488 MPSA92/93 2N5415/5416 PH5416 2N5400/5401 BSR20/A PMBT5401 BF470 BF472 BF584 -
OCR Scan
BF469 BF420.423 BF420/422 BF483/485/487 MPSA42/43 PN3439/3440 2N5550/5551 BSR19/A
Abstract: PMBTA42 PMSTA42 MPSA42 MPSA44 BFV421 BSS63 PMBT5401 PMST5401 2N5401 BF723 MMBTA92 Philips Semiconductors
Original
SC-73 PMBS3904 BSV52 PMBT3906 PMBT2222A PXT2222A 2n3906 sot23 2N5551 SOT23 PMBT5551, PMST5551 2n3904 sot23 philips PMBT5401, PMST5401 PMBS3904, PMSS3904 SC-62 SC-74 SC-70
Abstract: 0.5 50/5 100 f pmbt5401 sot-23 150 160 600 60/240 10/5 0.2 10/1 200 f bf723 sot-223 200 200 50 50/- -
OCR Scan
Abstract: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES · Low current (max. 300 mA) · High voltage (max. 160 V). APPLICATIONS · General purpose · Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. MARKING TYPE NUMBER PMBT5551 MARKING CODE pGI Top v ie w PMBT5551 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 1 2 M M 25S 2 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL -
OCR Scan
Abstract: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES · Low current (max. 300 mA) · Low voltage (max. 140 V). PMBT5550 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. - 3 MARKING TYPE NUMBER PMBT5550 - MARKING CODE p IF T O p V ie w 1 Ü2 MAM25S Fig. 1 Simplified outline (SOT23) and symbol. QUICK REFERENCE -
OCR Scan
Abstract: BC856BR BC856W BC856 BC857AW BC857A BC857BW BC857B BC857CW p2G p2H p2L p2T PMBTA56 PMBTA55 PMBT5401 -
OCR Scan
SOT89 MARKING CODE 3D sot89 mark code AE sot23 mark code AE 3D sot23 marking code P1R SOT89 MARKING 5G PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C
Abstract: SOT-89 SO T-223 SOT-23 SOT-23 SOT-23 50 120 300 300 300 250 130 BSR20A PMBT5401 -
OCR Scan
S3T31 SQT-23 PZTA92
Abstract: PZTA42 BSP19 BST39 PXTA42 PNP BF621 BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 , BT2 AT1 AT2 U35 U36 lÿpe No. BSR20 BSR20A BST15 BST16 BST39 BST40 PMBT5401 PMBT5550 PMBT5551 -
OCR Scan
T-23 T5550 T5551 T5401
Abstract: PNP BF421/423 BF486/488 MPSA92/93 2N5415/5416 PH5416 2N5400/5401 BSR20/A PMBT5401 BF470 BF472 BF584 -
OCR Scan
pm2222a BCB47B SOD80C PHILIPS 1N4148 SOD80C BC558B PHILIPS BCB47BW BA582 BA482 BA682 BA683 BA483 BAL74
Abstract: PMBT5401 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)150 V(BR)CBO (V)160 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C -
OCR Scan
TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 S3131 BLU52 1N321 BYW56 1N321A BLV97
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