PMBFJ175 |
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NXP Semiconductors
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PMBFJ175 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V |
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PMBFJ175 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ175 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ175,215 |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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PMBFJ175,215 |
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NXP Semiconductors
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PMBFJ175 - TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SOT-23, 3 PIN, FET General Purpose Small Signal |
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PMBFJ175T/R |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V |
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PMBFJ175T/R |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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