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Part Manufacturer Description Datasheet BUY
T2111020101-000 TE Connectivity (T2111020101-000) HMN-002-MC visit TE Connectivity
T2111020201-000 TE Connectivity (T2111020201-000) HMN-002-FC visit TE Connectivity
5-1415410-2 TE Connectivity (5-1415410-2) 0410 63 053 002 visit TE Connectivity
1601142-1 TE Connectivity (1601142-1) 159-002-000=TAB,187X020,MMDSMZ visit TE Connectivity
7-1415534-5 TE Connectivity (7-1415534-5) 0410 63 046 002 visit TE Connectivity
9-1415363-1 TE Connectivity (9-1415363-1) 0410 63 054 002 visit TE Connectivity

PK 002 bt

Catalog Datasheet MFG & Type PDF Document Tags

PK MUR 460

Abstract: transistor PUK 102 , Ibi = 0.4 Ade, VÃE(off) = 5-0 Vdc, VcE(pk) = 400 Vdc) (Tç = 100°C) 'sv â'" 500 1600* ns Fall Time , 'BT IBI- â  0.3 A ~ / lc = 9.0 A v Ij = 25°C â , LIMITS 10 5.0 M I 2.0 < I ,0 I 0.5 S 0 g 0.2 1 0, S 0.05 ù 0.02 0.01 FIGURE 16 â'" MAXIMUM , (2N6834) 002 0.01 -BONDING WIRE LIMIT Zf-THERMAL LIMIT SECOND BREAK00WN LIMIT - IUI I I I 1 , (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to
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2N6648 2N6833 2N8834 PK MUR 460 transistor PUK 102 PK 002 bt mur 460 data RT83 P-6042 P-6Q42
Abstract: : ANGLES .005 [.13] ±.100 [2.54] t HREE PLACE DECIMALS ± .01 0 [-25] FOUR PLACE DECIMALS ± .002 , THIS PRINT 295 [7.49] REF 0 0 â'"- .100 [2.54] REF BT C7 f E .100 [2.54 , INSERT PK-01 INTO SPECIFIED EOS AND BREAK OFF TAB ONLY] MISC\ MKTG 5 2 0 PAR K EAST BLVD. NEW -
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C-08-2-X C-08-3-X C-08-5-X C-17-2-X C-17-3-X C-17-5-X

BPS-15

Abstract: PK 002 bt operating temperature (-25 C to +71 °C) â'¢ Single or dual outputs â'¢ Delivery from stock! Bt , regulated (0.02%, Line/Load), with 0.01 % temperature coefficients (depending upon model), and isolation to , mA Line Regulation 0.02% 0.02% 0.02% Load Regulation 0.05% 0.05% 0.05% Temperature Coefficient 0.02%/°C . 0.02%/°C 0.02%/°C Breakdown Voltage, min. 500V dc 500V dc 500V dc Reflected Ripple , % 0.05% Load Regulation 0.05% 0.05% 0.05% Temperature Coefficient 0.02%/°C 0.02%/°C 0.02%/°C
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BPS-15 bps-15/412-d28 Datel bpm MS7 package 412D24 PK-002 bt UPM-12/840-021 12-D24 BPS-15/412-D28 02048-1194/TEL 339-3000/TLX 174388/FAX
Abstract: February 2002) HFD3180-002 PK XXXX X DMM Printed in USA Honeywell , Typical Bandwidth HFD3180-002 The HFD3180-002 is a high-performance 850nm GaAs detector and , XXX, (622Mbps) communications standards. The HFD3180-002 converts optical power into an electrical , HFD3180-002 is designed to interface with 50/125 and 62.5/125mm multimode fiber. Honeywell Fiber , Rating -40 to +85°C 0 to +70°C 260°C, 10 sec. -0.5 to 6 V 0 dBm average, +4 dBm peak HFD3180-002 Honeywell
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HFD3180-002 006697-1-EN

fiber optic lan

Abstract: HFD3180 Typical Bandwidth Preliminary HFD3180-002 The HFD3180-002 is a high-performance 850nm GaAs , Fibre Channel) and ATM XXX, (622Mbps) communications standards. The HFD3180-002 converts optical power , . The Honeywell HFD3180-002 is designed to interface with 50/125 and 62.5/125mm multimode fiber , average, +4 dBm peak Preliminary HFD3180-002 NOTICE Stresses greater than those listed under , =50 937.5 MHz BT Filter BER=10-12, SNR=7 S -20 PSRR 10 Pin=0µW, Rload=50 Pin=20µW peak, Rload=50 Pin
Honeywell
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fiber optic lan HFD3180
Abstract: February 2002) HFD3180-002 PK XXXX X DMM Printed in USA Honeywell , Typical Bandwidth HFD3180-002 The HFD3180-002 is a high-performance 850nm GaAs detector and , XXX, (622Mbps) communications standards. The HFD3180-002 converts optical power into an electrical , HFD3180-002 is designed to interface with 50/125 and 62.5/125mm multimode fiber. Honeywell Fiber , Rating -40 to +85°C 0 to +70°C 260°C, 10 sec. -0.5 to 6 V 0 dBm average, +4 dBm peak HFD3180-002 Honeywell
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Abstract: : Gaussian Default Value: Bbt = 0.3 Range (BT in 0.5 steps): .02 to 0.7 Global Phase Error:18 (rms/pk) 1 , MHz: +10 to -136 dBm >3000 MHz to 4000 MHz: +7 to -136 dBm Resolution 0.02 dB Level Accuracy2 (at , Impedance: 50 ohms 2Accuracy degrades by 0.02 dB/°C over full temperature range and by 0.3 dB above +7 dBm , kbits/sec Filter: Gaussian Default Value: BT = 0.5 Range (BT in 0.5 steps): 0.2 to 0.7 Deviation , factors (BT) specified at power levels >=+7 dBm. GSM (DCS1800/PCS1900) (Option UN3 or UN4) Modulation Agilent Technologies
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E4432A ESG-D3000A
Abstract: MHz: +10 to -136 dBm >3000 MHz to 4000 MHz: +7 to -136 dBm Resolution 0.02 dB Level Accuracy2 (at , Impedance: 50 ohms 2Accuracy degrades by 0.02 dB/°C over full temperature range and by 0.3 dB above +7 dBm , to 1209.6 kbits/sec Filter: Gaussian Default Value: BT = 0.5 Range (BT in 0.5 steps): 0.2 to 0.7 , filter factors (BT) specified at power levels >=+7 dBm. GSM (DCS1800/PCS1900) (Option UN3 or UN4 , Filter: Gaussian Default Value: Bbt = 0.3 Range (BT in 0.5 steps): .02 to 0.7 Global Phase Error:18 Agilent Technologies
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E4431A ESG-D2000A
Abstract: Default Value: Bbt = 0.3 Range (BT in 0.5 steps): .02 to 0.7 Global Phase Error:18 (rms/pk) 1°/4 , MHz: +10 to -136 dBm >3000 MHz to 4000 MHz: +7 to -136 dBm Resolution 0.02 dB Level Accuracy2 (at , Impedance: 50 ohms 2Accuracy degrades by 0.02 dB/°C over full temperature range and by 0.3 dB above +7 dBm , Filter: Gaussian Default Value: BT = 0.5 Range (BT in 0.5 steps): 0.2 to 0.7 Deviation Accuracy:17 6 , , Low Capacity 17 Specifications apply for the frequency range, data rates and filter factors (BT Agilent Technologies
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E4430A ESG-D1000A
Abstract: Range (BT in 0.5 steps): .02 to 0.7 Global Phase Error:18 (rms/pk) 1°/4° 0.5°/1.75° (typical , MHz: +10 to -136 dBm >3000 MHz to 4000 MHz: +7 to -136 dBm Resolution 0.02 dB Level Accuracy2 (at , Impedance: 50 ohms 2Accuracy degrades by 0.02 dB/°C over full temperature range and by 0.3 dB above +7 dBm , Value: BT = 0.5 Range (BT in 0.5 steps): 0.2 to 0.7 Deviation Accuracy:17 6 (1.5, typical) Channel , Specifications apply for the frequency range, data rates and filter factors (BT) specified at power levels >=+7 Agilent Technologies
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E4433A ESG-D4000A

motorola transistor 2N6547

Abstract: 2n6546 motorola lis |XS |XS (Iq = 10 A(pk), Vc|a m p = Rated VC E X , Iß1 = 2.0 A, VßE(off) = 5 0 V d c. TC = 100°C) ts tf - - Typical 5.0 1.5 lis lis Storage Time Fall Time (Iq = 10 A(pk), Vc , , TIM E (ns) 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT , ) I o " 4, *Bt(orr) 3v Tp < 100X 100 200 VCEO(sus) - - - VCEX(sus) - 5.0 7.0 10 , can be handled to values less than the limitations imposed by second breakdown. '.01 0.02 500
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motorola transistor 2N6547 2n6546 motorola EM- 546 motor 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 2N6547/D 2N6547

Drive circuit for IGBT using IR2130

Abstract: Schematic Drive circuit for IGBT using IR2130 Ambienttemperature °C 55 Thermal resistance j-c KM/ 40.00 IG BT MODEL AND PARAM ETERS: IRGBC30UD2-S(typical , =125°C Gamma Conduction model: Vt= 0.60 a= 0.120 b= 1.000 0.88623 Switching model: Pk lrr/lf= 1.30 ta(|JS)= , 0.02 0.03 0.06 0.12 0.20 0.24 0.25 Correctionfactorforgate drive 23Q 1.00 1.00 1.00 1.00 1.00 1.00 1.00 2.00 3.00 Corrected turn-on losses W 0.00 0.01 0.02 0.03 0.06 0.12 0.20 0.49 0.76 Turn-off , , switching losses W 0.00 0.00 0.00 0.00 0.00 0.01 0.02 0.02 0.03 Total diode losses W 0.30 0.30 0.30 0 29
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Drive circuit for IGBT using IR2130 Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output T0-220 IRGBC30KD2-S IR2130

IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies

Abstract: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Types H & BT . . , 71000 .629" (15.97mm) 22 to 1 2 thru 6 600V H/BT .652" (16.56mm) H - 16 to 4 BT , Resistance: .002 Ohm Typ. â'" CFTD 9.687 246.06 9.062 230.18 25 26 211.13 9.750 247.65 10.062
Curtis Industries
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IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies

MJF16006A

Abstract: vqe 14e 1-5 Vdc) , , VCE(pk) - 400 Vdc) (Tj = 100-c) tsv â'" 800 2000 ns Fall Time tfi â'" 80 200 Crossover Time tc , ?5s4 qd1qm40 1 | TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS | - 3 2> -1 I = 5, TC = 75°C, VcE(pk) = 400 V IC/«B1 = 10, TC = 75°C, VcE(pk) = 400 V o 3000 2000 c Ui S tâ'" 1000 O s i 700 $
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MJF16006A vqe 14e wMR918 MTP8P10 AM503 MUR8100 MJF16006A/D 33-II AN1040 C64449

D 4206 TRANSISTOR

Abstract: 2N5206 | Limits | 1 1 1 VTM 1 1 IH 1 1 VGT 1 y 1 1 1 IGT y 1 1 1 1 1 1 1 1 v(pk) | mA dc 1 1 V dc 1 1 I mA dc , NOTE 2 bT, at J_Jjfc SEE NOTE 5 CATHODEâ'"' TERMINAL I SEE NOTE A TERMINAL 3 SEE NOTE 7 NOTES: 1 , Z .002 .050 ; Zi .006 .152 FIGURE 1. Physical dimensions of thyristor types 2N682, 2N683 , 1.4.1 Individual ratings. I I I Type | I I VRRM y VDRM I I I VRSM 2/ | I I i i v(pk) v(pk) I v(pk>. I , value or | ¡+0.4 mA(pk), whichever is greater. | |4Iqrm = 100 percent of initial value or | 1+0.4 mA(pk
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2N685 2N692 2N5206 D 4206 TRANSISTOR DD001B 40Cr 2N688 1L-S-19500/108E MIL-S-19500/108D MIL-S-19500
Abstract: ), NORMALIZED TRANSIENT THERMAL RESISTANCE : D = 0.5 â'" 0.2 0.1 0.05 _ p (pk) f 002 d n e J G W , idth < 300 us, Duty Cycle < 2%. 2 M otoro la IG BT D evice Data M G W 12N120 (AMPS , BT D evice D ata 3 M G W 12N 120 100 10 cc cc ZD o cc o o o V q e = 15V , ) Figure 8. Therm al Response M otoro la IG BT D evice Data M G W 12N120 PACKAGE DIMENSIONS 1 -
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MGW12N120/D

SMBJ8.5CA

Abstract: SMBJ20A ) .008(.203) .002(.051) Dimensions in inches and (millimeters) Maximum Ratings and Electrical , MK MM MP MR MT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR PT PV PX PZ QE QG QK QM BI AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT
KD Diode
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SMBJ8.5CA SMBJ20A SMBJ15A SMBJ100A SMBJ11CA SMBJ8.0A SMBJ440CA DO-214AA MIL-STD-750

"peripheral control processor"

Abstract: ADSL MODEM PROGRAMMING compliant Ethernet (10/100 bT) MII Interface · Multiport UTOPIA Level 1 & 2 (8-bit data) Master/Slave , Auckland (+64) 9-520 3033 SGP New Delhi 110 002 (+91) 11-331 9912 P Amadora (+35) 1-417 00 11 TR Mumbai 18 (+91) 22-496 21 99 PK Islamabad (+92) 51-21 2200 USA IRL
Infineon Technologies
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B119-H7524-X-X-7600 ADSL MODEM PROGRAMMING PBGA272 ATM25 ATM-25

SMBJ8.5CA

Abstract: SMBJ15A (2.44) .084(2.13) .060(1.52) .030(0.76) .220(5.59) .200(5.08) .008(.203) .002(.051 , MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR PT PV PX PZ QE QG QK QM BI AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT BV BX BZ CE CG CK
KD Diode
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SMBJ70A SMBJ12A SMBJ350A SMBJ200A SMBJ50A DO-214AA SMBJ16CA

baker e4

Abstract: MJH16018 (Table 1) Storage Time Baker Clamped (IC = 5 Adc, Ibi = 2 Adc, VBE(off) = 2 Vdc, VCE(pk) = -»00 , / C = 5A Bt =2A B2=2A0 BE= -2\ y / / â" 1 13 17 , \ 200 400 600 800 1K 1.2K I.4K 1.6K 1.8K 2K vCE(pk). reAK COLLECTOR VOLTAGE WOLTSI Figure 13. Maximum , at any case temperature by using the appropriate curve on Figure 15. Tj(pk) maV be calculated from , 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 1, TIME (ms) Figure 16. Thermal Response
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MJ16018 MJH16018 UR105 MUR105 P6302 baker e4 MTPSP10 bt 109 transistor a626 T-33-/J-T-3S-/3
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