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PHI06

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Abstract: .NEC ELECTRONICS INC 3QE D â  b427525 â¡DETSflci 7 â  T-41 'W PHOTO TRANSISTOR _PH108 PHOTO TRANSISTOR PACKAGE DIMENSIONS in millimeter« The PHI06 is a photo transistor in a plastic molded package, and very suitable for a detector of a photo interrupter. ® Emltwr (2) Collector ABSOLUTE MAXIMUM RATINGS (T,-25 °C) Collector to Emitter Voltage VCEO 30 V Collector Current ic 40 mA Power Dissipation Pc 100 mW Junction Temperature Ti 100 °C Storage Temperature Tjtg -40 to +100 °C -
OCR Scan
PH106 foto transistor interrupter photo VCE-10 L-100 427S2S T-41-61
Abstract: rmin = 18m + rdep=15k repi= 22k + bv = 3000 ibv = 10E-06 vreverse=6 + vj = 0.6 phi=0.6 + W = 175u Microsemi
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UMX5601 PIN diode SPICE model Microwave PIN diode spice pin diode Microwave PIN diode TM 937
Abstract: NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB Harris Semiconductor
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6v ls1 relay HIP0061 HIP0061AS1 HIP0061AS2 ISO9000 1-800-4-HARRIS
Abstract: =3.150e-03 PHI=0.65 G AM M A=2.55 + VM AX=6.42e+07 NSUB=4.33e+16 THETA=0.60973 ETA=0.0015 KAPPA=1.275 L=1u W -
OCR Scan
25E03 HIP2060 TS-001A HIP2060AS1 HIP2060AS2 IS09000
Abstract: NMOS LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA Harris Semiconductor
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12v class d amplifier 70W 001-AA HIP4080A transistor AHs HIP2060AS3 TS-001AA MO-169
Abstract: =3 (VTO=2.75 + TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA Intersil
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AN9539 jfet normally off to220 mosfet L 3055 class d amplifier schematic hip4080 ITL5-1 HIP4080 dual jfet transistor array HIP4086
Abstract: HIP0061_1 LS3 7 10 7.5n LS4 4 11 7.5n .ENDS KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB Intersil
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AN8610 KAPPA RELAY
Abstract: =2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.60973 ETA Harris Semiconductor
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AN-8610 BSC 75N MO-169AC mosfet array vgs 5v 2A
Abstract: =3 (VTO=2.75 + TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.6097 + Intersil
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AN9404 1350P mosfet p 3055 mosfet control circuit MO-169AB 0-60V HIP2100
Abstract: Insert the insulation tube (outside diameter phi0.65mm) of 50mm length in the drain wire, and bent Molex Japan
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IS-8048E ECN-JM80007 ECN-JM10013 ECN-JM20001 ECN-JM20008 ECN-JM60008
Abstract: LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAM M A=2.55 + VM AX=6.42e+07 NSUB=4.33e+16 TH ETA -
OCR Scan
ic 067b rs20e transistor P1M O-169 5M-1982 S-001AA
Abstract: .MODEL NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB Intersil
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UF 407 Diode
Abstract: =3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.6097 + ETA=0.0015 KAPPA=1.275 L=1u W Harris Semiconductor
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oscilloscope schematic EAS 200 lem la 50p RM1S mj 3055 npn transistor mj 3055 harris application an8610
Abstract: externally if needed. .MODEL NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=500 KP=3.150e-03 PHI=0.65 GAMMA=2.55 VMAX -
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diode 3982
Abstract: NMOS LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA Intersil
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lambda IC 101 LAMBDA AS3 FN3983 350E-12 Switching Power supply with HIP4080A
Abstract: =3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.60973 ETA=0.0015 KAPPA=1.275 L=1u W Harris Semiconductor
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Abstract: LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAM M A=2.55 + VM AX=6.42e+07 NSUB=4.33e+16 TH ETA -
OCR Scan
Abstract: VPINCH 6 8 DC 10.0 VMEAS 8 15 DC 0.0 .MODEL NMOS1 NMOS LEVEL=3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 Intersil
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET relay spice model
Abstract: =3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX=6.42e+07 NSUB=4.33e+16 THETA=0.60973 ETA=0.0015 KAPPA=1.275 L=1u W Harris Semiconductor
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Transistor S1D
Abstract: 15 DC 0.0 .MODEL NMOS1 NMOS LE V E L-3 (VTO=2.75 TOX=5e-08 KP=3.150e-03 PHI=0.65 GAMMA=2.55 + VMAX -
OCR Scan
psp 1004 1-800-4-H
Abstract: .NEC ELECTRONICS INC 3QE D â  b427525 â¡DETSflci 7 â  T-41 'W PHOTO TRANSISTOR _PH108 PHOTO TRANSISTOR PACKAGE DIMENSIONS in millimeter« The PHI06 is a photo transistor in a plastic molded package, and very suitable for a detector of a photo interrupter. ® Emltwr (2) Collector ABSOLUTE MAXIMUM RATINGS (T,-25 °C) Collector to Emitter Voltage VCEO 30 V Collector Current ic 40 mA Power Dissipation Pc 100 mW Junction Temperature Ti 100 °C Storage Temperature Tjtg -40 to +100 °C Siemens
Original
5TT4105-0 GAEB81 GAEB83
Abstract: rmin = 18m + rdep=15k repi= 22k + bv = 3000 ibv = 10E-06 vreverse=6 + vj = 0.6 phi=0.6 + W = 175u Siemens
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5TT4104-0
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