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LT1076HVIT#06 Linear Technology IC MULTI CONFIG ADJ 2A TO220-5 visit Linear Technology - Now Part of Analog Devices
LT1010CT#31 Linear Technology IC BUFFER HI-SPEED 150MA TO220-5 visit Linear Technology - Now Part of Analog Devices

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PG-TO220-3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: °C G40F655 PG-TO220-3 2 Rev.#2;1.1,#2;#2;2012-11-09 IGW40N65F5,#2;IGP40N65F5 , . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package Drawing PG-TO220-3 . . . . . . . , PG-TO220-3 260 260 °C M 0.6 Nm Soldering temperature, wave soldering 1.6 mm (0.063 in , PG-TO247-pinGCE PG-TO220-3 Parameter , 5mm (0.197 in.) from case LE PG-TO247-pinGCE PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz Infineon Technologies
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PG-TO247-3
Abstract: SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V DS 2.7 â"¦ Q g,typ â'¢ Extreme dv/dt rated V R DS(on)max @ Tj = 25° C â'¢ New revolutionary high voltage technology 800 12 nC â'¢ High peak current capability â'¢ Qualified according to JEDEC1) for target applications PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant â'¢ Ultra low , Package Marking SPP02N80C3 PG-TO220-3 02N80C3 Maximum ratings, at T j=25 ° unless Infineon Technologies
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11N80C3

Abstract: SPP11N80C3 CoolMOSTM Power Transistor Product Summary Features V DS â'¢ Extreme dv/dt rated V R DS(on)max @ Tj = 25° C â'¢ New revolutionary high voltage technology 800 0.45 â"¦ 64 nC Q g,typ â'¢ High peak current capability â'¢ Qualified according to JEDEC1) for target applications PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant â'¢ Ultra low , Package Marking SPP11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 ° unless
Infineon Technologies
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G40F655

Abstract: PG-TO-247-3 -3 PG-TO220-3 2 Rev.1.1,2012-11-09 IGW40N65F5,IGP40N65F5 Highspeedswitchingseriesfifthgeneration , . . . . . . . . . . . . . . . . . . . . . . . . .12 Package Drawing PG-TO220-3 . . . . . . . . . . . , IC ICpuls VGE Ptot Tvj Tstg PG-TO247-3 PG-TO220-3 M Value 650 74.0 46.0 120.0 120.0 ±20 ±30 255.0 , -3 PG-TO220-3 0.60 40 62 K/W K/W , case Cies Coes Cres QG LE VCC=520V,IC=40.0A, VGE=15V PG-TO247-3 PG-TO220-3 VCE=25V,VGE=0V,f=1MHz 2500
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PG-TO-247-3 650VIGBT 81726M 2012I
Abstract: °C G40F655 PG-TO220-3 2 Rev.#2;1.1,#2;#2;2012-11-09 IGW40N65F5,#2;IGP40N65F5 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Package Drawing PG-TO220-3 . . . . . , °C PG-TO247-3 PG-TO220-3 260 260 °C M 0.6 Nm Soldering temperature, wave , 40 62 K/W PG-TO247-3 PG-TO220-3 , 5mm (0.197 in.) from case LE PG-TO247-3 PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz Infineon Technologies
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Abstract: °C G40H655 PG-TO220-3 2 Rev.#2;1.1,#2;#2;2012-11-09 IGW40N65H5,#2;IGP40N65H5 , . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package Drawing PG-TO220-3 . . . . . . . , PG-TO220-3 260 260 °C M 0.6 Nm Soldering temperature, wave soldering 1.6 mm (0.063 in , PG-TO247-pinGCE PG-TO220-3 Parameter , 5mm (0.197 in.) from case LE PG-TO247-pinGCE PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz Infineon Technologies
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G40H655

Abstract: 175°C G40H655 PG-TO247-3 IGP40N65H5 650V 40A 1.65V 175°C G40H655 PG-TO220-3 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Package Drawing PG-TO220-3 . . . . . , °C PG-TO247-3 PG-TO220-3 260 260 °C M 0.6 Nm Soldering temperature, wave , 40 62 K/W PG-TO247-3 PG-TO220-3 , 5mm (0.197 in.) from case LE PG-TO247-3 PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz
Infineon Technologies
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PG-TO220-3

Abstract: STANDARD DIN 6784 SHEET METAL -3 PG-TO220-3 Applications · · · · · Manufacturing Automation Appliances HDTV Televisions Game Consoles , PG-SOT223-4 PG-SOT223-4 PG-TO252-3 PG-TO220-3 PG-TO252-3 PG-TO263-3 PG-TO220-3 PG-TO263-3 PG-TO220-3 , Configuration 3 3.1 Pin Configuration Pin Assignment PG-SOT223-4, PG-TO252-3, PG-TO263-3, and PG-TO220-3 , (top view) 3.2 4 Pin Definitions and Functions PG-SOT223-4, PG-TO252-3, PG-TO263-3, and PG-TO220-3 , -3 4.3.5 4.3.6 4.3.7 4.3.8 PG-TO220-3 4.3.9 Junction to Case1) Junction to Case1) Junction to Ambient1
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25001V50 25001V10 STANDARD DIN 6784 SHEET METAL IFX25001TSV50 IFX25001 IFX25001TF 25001B 25001V85

STANDARD DIN 6784 SHEET METAL

Abstract: PG-TO220-3 ) PG-TO252-3 PG-TO220-3 PG-TO263-3 PG-SOT223-4 Applications · · · · · Manufacturing , -3 2500133 IFX25001 TS V50 PG-TO220-3 25001V50 IFX25001TF V50 PG-TO252-3 2500150 IFX25001 TC V50 PG-TO263-3 25001V50 IFX25001 TS V85 PG-TO220-3 25001V85 IFX25001 TC V85 PG-TO263-3 25001V85 IFX25001 TS V10 PG-TO220-3 25001V10 IFX25001 TC V10 PG-TO263 , -4, PG-TO252-3, PG-TO263-3, and PG-TO220-3 GND 1 5 GND INH 1 5 Q Q INH N.C
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TO252 rthjc PG-TO-252-3

25001V50

Abstract: PG-TO220-3 ) PG-TO252-3 PG-TO220-3 PG-TO263-3 PG-SOT223-4 Applications · · · · · Manufacturing , -3 2500133 IFX25001 TS V50 PG-TO220-3 25001V50 IFX25001TF V50 PG-TO252-3 2500150 IFX25001 TC V50 PG-TO263-3 25001V50 IFX25001 TS V85 PG-TO220-3 25001V85 IFX25001 TC V85 PG-TO263-3 25001V85 IFX25001 TS V10 PG-TO220-3 25001V10 IFX25001 TC V10 PG-TO263 , -4, PG-TO252-3, PG-TO263-3, and PG-TO220-3 Figure 2 Pin Configuration (top view) 3.2 Pin
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17n80c3

Abstract: SPP17N80C3 CoolMOS® Power Transistor Product Summary Features V DS â'¢ Extreme dv/dt rated V R DS(on)max @ Tj = 25° C â'¢ New revolutionary high voltage technology 800 0.29 â"¦ 88 nC Q g,typ â'¢ High peak current capability â'¢ Qualified according to JEDEC1) for target applications PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant â'¢ Ultra low , Package Marking SPP17N80C3 PG-TO220-3 17N80C3 Maximum ratings, at T j=25 ° unless
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15P10P

Abstract: SPP15P10P G SPD15P10P G SIPMOS® Small-Signal-Transistor Features · P-Channel · Enhancement mode · Normal level · Avalanche rated · Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 0.24 -15 V A PG-TO220-3 PG-TO252-3 Type SPP15P10P G SPD15P10P G Package PG-TO220-3 PG-TO252-3 Marking 15P10P 15P10P Lead free Yes Yes Packing Non dry Non dry Maximum , SPP15P10P G SPD15P10P G PG-TO220-3: Outline Rev 1.4 page 9 2008-07-29 SPP15P10P G SPD15P10P G
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Abstract: °C K40H655 PG-TO220-3 2 Rev.#2;1.1,#2;#2;2012-11-09 IKW40N65H5,#2;IKP40N65H5 , . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1 Package Drawing PG-TO220-3 . . . . . . . , Tstg -55.+150 °C PG-TO247-pinGCE PG-TO220-3 260 260 °C M 0.6 Nm , ) 40 62 K/W PG-TO247-pinGCE PG-TO220-3 4 Rev.#2;1.1,#2;#2;2012-11-09 IKW40N65H5,#2;IKP40N65H5 , 5mm (0.197 in.) from case LE PG-TO247-pinGCE PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz Infineon Technologies
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15P10PL

Abstract: SPP15P10PL SPP15P10PL G SPD15P10PL G SIPMOS® Power-Transistor Features · P-Channel · Enhancement mode · logic level · Avalanche rated · Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 0.20 -15 V : A PG-TO220-3 PG-TO252-3 Type SPP15P10PL G SPD15P10PL G Package PG-TO220-3 PG-TO252-3 Marking 15P10PL 15P10PL Lead free Yes Yes Packing Non dry Non dry Maximum , Outline: PG-TO-252-3 Rev 1.3 page 8 2008-07-29 SPP15P10PL G SPD15P10PL G PG-TO220-3: Outline
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SPD15P10PLG

G40H655

Abstract: PG-TO-247-3 °C Marking G40H655 G40H655 Package PG-TO247-3 PG-TO220-3 2 Rev.1.1,2012-11-09 IGW40N65H5,IGP40N65H5 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Package Drawing PG-TO220-3 . . . . . . . , ambient Symbol Conditions Max.Value Unit Symbol VCE IC ICpuls VGE Ptot Tvj Tstg PG-TO247-3 PG-TO220-3 M , °C °C °C Nm Rth(j-c) Rth(j-a) PG-TO247-3 PG-TO220-3 0.60 40 62 K/W K/W , -3 PG-TO220-3 VCE=25V,VGE=0V,f=1MHz 2500 40 9 95.0 13.0 nC nH pF Symbol Conditions Value min. typ. max. Unit
Infineon Technologies
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PG-TO247 G40H
Abstract: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features V DS 1.3 â"¦ Q g,typ â'¢ Extreme dv/dt rated V R DS(on)max @ Tj = 25° C â'¢ New revolutionary high voltage technology 800 23 nC â'¢ High peak current capability â'¢ Qualified according to JEDEC1) for target applications PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant â'¢ Ultra low , Package Marking SPP04N80C3 PG-TO220-3 04N80C3 Maximum ratings, at T j=25 ° unless Infineon Technologies
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07n65c3

Abstract: PG-TO220-3 SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOSTM Power Transistor V DS · Ultra low gate charge · Periodic avalanche rated PG-TO220-3 0.6 ID · New revolutionary high voltage , -3-31 P-TO220-3-1 · PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute) Type SPP07N65C3 Package PG-TO220 Marking 07N65C3 SPI07N65C3 PG-TO262-3 07N65C3 SPA07N65C3 PG-TO220-3 07N65C3 , PG-TO220-3 Rev. 1.91 Page 12 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO-220-3
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smd diode 46A PG-TO262-3-1 P-TO220-3-31
Abstract: SPP15P10P H  SIPMOS® Small-Signal-Transistor Product Summary Features V DS 0.24 â"¦ ID â'¢ Enhancement mode V R DS(on),max â'¢ P-Channel -100 -15 A â'¢ Normal level â'¢ Avalanche rated PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant  , Lead free Packing SPP15P10P  H PG-TO220-3 15P10P Yes Non dry Maximum ratings, at , Outline: PG-TO-252-3 Rev 1.7 page 8 2011-09-01 SPP15P10P H PG-TO220-3: Outline Rev 1.7 Infineon Technologies
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IEC61249
Abstract: SPP15P10P G SPD15P10P G SIPMOS® Small-Signal-Transistor Product Summary Features V DS 0.24 â"¦ ID â'¢ Enhancement mode V R DS(on),max â'¢ P-Channel -100 -15 A â'¢ Normal level â'¢ Avalanche rated PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant Type Package Marking Lead free Packing SPP15P10P G PG-TO220-3 15P10P Yes Non , Outline: PG-TO-252-3 Rev 1.5 page 8 2008-09-01 SPP15P10P G SPD15P10P G PG-TO220-3: Outline Infineon Technologies
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07N65C3

Abstract: 07N65 · Periodic avalanche rated PG-TO220-3 0.6 ID · New revolutionary high voltage , -3-31 P-TO220-3-1 · PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute) Type SPP07N65C3 Package PG-TO220 Marking 07N65C3 SPI07N65C3 PG-TO262-3 07N65C3 SPA07N65C3 PG-TO220-3 07N65C3 , 2010-12-21 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 Rev. 1.92 Page 12 2010-12-21 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO-220-3 (FullPAK) Rev. 1.92 Page 13 2010-12-21
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07N65
Abstract: °C K40F655 PG-TO220-3 2 Rev.#2;1.1,#2;#2;2012-11-09 IKW40N65F5,#2;IKP40N65F5 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Package Drawing PG-TO220-3 . . . . . , °C Storage temperature Tstg -55.+150 °C PG-TO247-3 PG-TO220-3 260 260 °C , junction - ambient Rth(j-a) 40 62 K/W PG-TO247-3 PG-TO220-3 4 Rev.#2;1.1,#2;#2;2012-11-09 , PG-TO247-3 PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz 13.0 pF Switching#2;Characteristic Infineon Technologies
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IKW40N65

K40H655

Abstract: 175°C K40H655 PG-TO247-3 IKP40N65H5 650V 40A 1.65V 175°C K40H655 PG-TO220-3 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Package Drawing PG-TO220-3 . . . . . , °C Storage temperature Tstg -55.+150 °C PG-TO247-3 PG-TO220-3 260 260 °C , junction - ambient Rth(j-a) 40 62 K/W PG-TO247-3 PG-TO220-3 4 Rev.#2;1.1,#2;#2;2012-11-09 , PG-TO247-3 PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz 13.0 pF Switching#2;Characteristic
Infineon Technologies
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Abstract: 175°C K40F655 PG-TO247-3 IKP40N65F5 650V 40A 1.6V 175°C K40F655 PG-TO220-3 , . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1 Package Drawing PG-TO220-3 . . . . . . . , Tstg -55.+150 °C PG-TO247-pinGCE PG-TO220-3 260 260 °C M 0.6 Nm , ) 40 62 K/W PG-TO247-pinGCE PG-TO220-3 4 Rev.#2;1.1,#2;#2;2012-11-09 IKW40N65F5,#2;IKP40N65F5 , 5mm (0.197 in.) from case LE PG-TO247-pinGCE PG-TO220-3 - VCE#2;=#2;25V,#2;VGE#2;=#2;0V,#2;f#2;=#2;1MHz Infineon Technologies
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Abstract: '¢ Pb-free lead plating; RoHS compliant â'¢ Halogen-free according to IEC61249-2-21 PG-TO220-3 Type Package Marking IPP020N06N PG-TO220-3 020N06N Maximum ratings, at T j=25 ° unless , .2.3 page 7 2012-12-20 IPP020N06N Package Outline Rev.2.3 PG-TO220-3 page 8 2012-12-20 Infineon Technologies
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50K/W J-STD20 JESD22

IPP05N03LA

Abstract: ),max ID 25 4.9 80 V m: A PG-TO262-3 PG-TO220-3 Type IPI05N03LA IPP05N03LA Package PG-TO262-3 PG-TO220-3 Marking 05N03LA 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified , 2007-08-29 IPI05N03LA, IPP05N03LA PG-TO220-3: Outline Packaging Rev. 1.9 page 9 2007-08-29
Infineon Technologies
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