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LT1010CT#31 Linear Technology IC BUFFER HI-SPEED 150MA TO220-5 visit Linear Technology - Now Part of Analog Devices
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PG-TO220-3-1

Catalog Datasheet MFG & Type PDF Document Tags

PG-TO220-3-1

Abstract: PG-TO-220-3-1 Product (RoHS compliant) version of TLE 4274 AEC qualified P-TO220-3-1 PG-TO220-3-1 ^ Functional , TLE 4274 DV50 TLE 4274 GV10 TLE 4274 GV50 TLE 4274 GV85 Data Sheet Package PG-TO220-3-1 (RoHS compliant) PG-TO220-3-1 (RoHS compliant) PG-TO220-3-1 (RoHS compliant) PG-TO252-3-11 (RoHS compliant , PG-TO220-3-1 GND PG-TO252-3-11 GND PG-TO263-3-1 GND 1 2 3 GND I Q 1 2 3 PG-TO252-3-11.vsd 1 2 3 I GND Q PG-TO263-3-1.vsd I GND PG-TO220-3-1.vsd Q
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PG-TO-220-3-1 VDR600 TLE4274GV10 TLE4274GV50 P-TO252-3-11 P-TO263-3-1

P-TO-252-3-11

Abstract: TLE4274GV10 electronics Green Product (RoHS compliant) version of TLE 4274 AEC qualified P-TO220-3-1 PG-TO220-3-1 , Package TLE 4274 V10 PG-TO220-3-1 (RoHS compliant) TLE 4274 V50 PG-TO220-3-1 (RoHS compliant) TLE 4274 V85 PG-TO220-3-1 (RoHS compliant) TLE 4274 DV50 PG-TO252-3-11 (RoHS compliant , Reverse polarity Data Sheet 2 Rev. 1.6, 2007-01-23 TLE 4274 PG-TO220-3-1 PG-TO252 , PG-TO220-3-1 (Plastic Transistor Single Outline) Green Product (RoHS-Compliant) To meet the world-wide
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P-TO-252-3-11 AEP02512 GV10 TLE GV10 4274GV50

G15N60

Abstract: PG-TO-247-3-21 ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 , 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 , resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.9 K/W Symbol Conditions Max , E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, Tj 150°C 2 , gate-emitter voltage (VCE 600V, Tj = 150°C) 8 Rev. 2.2 Sep 07 SGP15N60 SGW15N60 PG-TO-220-3-1
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J-STD-020 JESD-022

g15n60

Abstract: G15N60 IGBT - high ruggedness, temperature stable behaviour - parallel switching capability C G PG-TO-220-3-1 , IC VCE(sat) Tj Marking SGP15N60 600V 15A 2.3V 150°C G15N60 PG-TO-220-3-1 , ambient PG-TO-220-3-1 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified , =1MHz - 52 62 Gate charge QGate V C C = 48 0 V, I C =15A - 76 99 nC PG-TO-220-3-1 , Sep 08 SGP15N60 SGW15N60 PG-TO-220-3-1 9 Rev. 2.3 Sep 08 SGP15N60 SGW15N60
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PG-TO-247-3 G15N60 IGBT PG-TO-247-3-2

g30n60

Abstract: equivalent to g30n60 ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 , 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150°C 150°C Marking G30N60 G30N60 Package PG-TO-220-3-1 , resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.5 K/W Symbol Conditions Max , A V G E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, Tj 150 , 600V, Tj = 150°C) 8 Rev. 2.2 Jan 07 SGP30N60 SGW30N60 TO-220AB PG-TO220-3-1 symbol min A
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equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60

g30n60

Abstract: PG-TO-220-3-1 distribution - high ruggedness, temperature stable behaviour - parallel switching capability G PG-TO-220-3-1 , °C G30N60 PG-TO-220-3-1 SGW30N60 600V 30A 2.5V 150°C G30N60 PG-TO , Characteristic RthJC IGBT thermal resistance, junction ­ case RthJA junction ­ ambient PG-TO-220-3-1 , =3 0 A - 140 182 nC PG-TO-220-3-1 - 7 - nH PG-TO-247-3-21 - 13 , (VCE 600V, Tj = 150°C) 8 Rev. 2.3 Sep. 07 SGP30N60 SGW30N60 PG-TO-220-3-1 9 Rev
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100W-50W g30n60 data sheet

G15N60

Abstract: 06mJ ruggedness, temperature stable behaviour - parallel switching capability C G E PG-TO-220-3-1 (TO , A VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 , ambient RthJA PG-TO-220-3-1 PG-TO-247-3-1 62 40 RthJC 0.9 K/W Symbol Conditions Max. Value Unit , , V G E = 0V, f = 1 M Hz V C C = 4 80V, I C = 15A V G E = 1 5V PG-TO-220-3-1 PG-TO-247-3-1 V G E = 1 , -220AB PG-TO220-3-1 symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
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06mJ Q67040-S4508 Q67040-S4235

G15N60

Abstract: ruggedness, temperature stable behaviour - parallel switching capability C G E PG-TO-220-3-1 (TO , V A VCE 600V 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 , ambient RthJA PG-TO-220-3-1 PG-TO-247-3-1 62 40 RthJC 0.5 K/W Symbol Conditions Max. Value Unit , , V G E = 0V, f = 1 M Hz V C C = 4 80V, I C = 30A V G E = 1 5V PG-TO-220-3-1 PG-TO-247-3-1 V G E = 1 , gate-emitter voltage (VCE 600V, Tj = 150°C) 8 Rev. 2 Jan 05 SGP30N60 SGW30N60 TO-220AB PG-TO220-3-1
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Q67040-A4463 Q67040-S4237

g30N60

Abstract: G30N60 IGBT distribution - high ruggedness, temperature stable behaviour - parallel switching capability G PG-TO-220-3-1 , °C G30N60 PG-TO-220-3-1 SGW30N60 600V 30A 2.5V 150°C G30N60 PG-TO-247-3 Type , -247-3-21 junction ­ ambient PG-TO-220-3-1 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise , nC Internal emitter inductance LE PG-TO-220-3-1 - 7 - nH PG-TO-247-3-21 - , = 150°C) 8 Rev. 2.5 Nov. 09 SGP30N60 SGW30N60 PG-TO-220-3-1 9 Rev. 2.5 Nov
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igbt 1000v 30a

G15N60

Abstract: ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 , 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 , resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.9 K/W Symbol Conditions Max , E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, Tj 150°C 2 , -220AB PG-TO220-3-1 symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
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G15N60

Abstract: PG-TO-247-3-21 ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 , 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 , resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.9 K/W Symbol Conditions Max , E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, Tj 150°C 2 , -220AB PG-TO220-3-1 symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
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G15N60

Abstract: G15N60 IGBT ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 , 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 , resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.5 K/W Symbol Conditions Max , A V G E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, Tj 150 , 600V, Tj = 150°C) 8 Rev. 2.1 June 06 SGP30N60 SGW30N60 TO-220AB PG-TO220-3-1 symbol min
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G30N60

Abstract: G30N60 IGBT ruggedness, temperature stable behaviour - parallel switching capability C G E PG-TO-220-3-1 , V A VCE 600V 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150°C 150°C Marking G30N60 G30N60 Package PG-TO-220-3-1 , thermal resistance, junction ­ case Thermal resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO , , VGE=0V, f =1MHz V C C = 48 0 V, I C =30A V G E =15V PG-TO-220-3-1 PG-TO-247-3-21 V G E =15V, t S C 1 , Rev. 2.4 Sep. 08 SGP30N60 SGW30N60 PG-TO-220-3-1 9 Rev. 2.4 Sep. 08 SGP30N60
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IGBT 400V 100KHZ 30A igbt 600V 30A

d06s60

Abstract: nC A PG-TO220-3-1. Type SDP06S60 SDT06S60 Package PG-TO220-3-1. PG-TO220-2-2. Ordering , Rev. 2.1 Page 6 2005-02-17 SDP06S60 SDT06S60 PG-TO220-3-1 P-TO220-3-1 dimensions symbol
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d06s60 Q67040-S4371 Q67040-S4446 D06S60

PG-TO-220-3-1

Abstract: PG-TO220-3-1 SDP20S30 Silicon Carbide Schottky Diode · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · No forward recovery 1 2 3 thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 300 23 2x10 V nC A PG-TO220-3-1. Type SDP20S30 Package PG-TO220-3-1. Ordering Code Q67040-S4419 Marking D20S30 , diF /dt Rev. 1.2 Page 6 2005-02-17 SDP20S30 PG-TO220-3-1 P-TO220-3-1 dimensions
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Abstract: -2-2. 300 23 10 V nC A PG-TO220-3-1. Type Package Ordering Code Marking Pin 1 n.c. C Pin 2 C A Pin 3 SDP10S30 SDT10S30 PG-TO220-3-1. PG-TO220-2-2. Q67040-S4372 Q67040-S4447 , 800 A/µs 1000 diF /dt Rev. 1.2 Page 6 2005-02-17 SDP10S30 SDT10S30 PG-TO220-3-1 Infineon Technologies
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D10S30

G15N60

Abstract: G15N60 IGBT - high ruggedness, temperature stable behaviour - parallel switching capability C G PG-TO-220-3-1 , °C G15N60 PG-TO-220-3-1 SGW30N60 600V 30A 2.5V 150°C G15N60 PG-TO , Characteristic RthJC IGBT thermal resistance, junction ­ case RthJA junction ­ ambient PG-TO-220-3-1 , =3 0 A - 140 182 nC PG-TO-220-3-1 - 7 - nH PG-TO-247-3-21 - 13 , -220AB PG-TO220-3-1 symbol [mm] [inch] min max min max A 9.70 10.30 0.3819
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g15N6 30A, 600v DIODE

PG-TO-220-3-1

Abstract: PG-TO220-3-1 SDP20S30 Silicon Carbide Schottky Diode · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · No forward recovery 1 2 3 thinQ!¥ SiC Schottky Diode Product Summary VRRM Qc IF 300 23 2x10 V nC A PG-TO220-3-1. Type SDP20S30 Package PG-TO220-3-1. Ordering Code Q67040-S4419 Marking D20S30 , PG-TO220-3-1 P-TO220-3-1 dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60
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IKP10N60T

Abstract: k10t60 distribution PG-TO-220-3-1 - high ruggedness, temperature stable behavior (TO-220AB) - low VCE(sat) NPT , K10T60 Package PG-TO-220-3-1 G E Type IKP10N60T Ordering Code Q67040S4682 Maximum Ratings , PG-TO-220-3-1 PG-TO-263-3-2 Footprint PG-TO-263-3-2 (6cm² Cu) Electrical Characteristic, at Tj = 25 °C , Conditions RthJCD PG-TO-220-3-1 RthJC PG-TO-220-3-1 Symbol Conditions IKP10N60T p Max. Value 1.35 1.9 62 , . 2 Jan 05 TrenchStop Series IKP10N60T p Dimensions TO-220AB PG-TO220-3-1 symbol [mm
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IKP10N60T IGBT

gp15n120

Abstract: parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3-1 · Qualified according , °C 150°C Marking GP15N120 Package PG-TO-220-3-1 SGW15N120 PG-TO-247-3-21 Symbol VCE IC , , junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-1 62 40 RthJC 0.63 K/W Symbol Conditions Max. Value Unit , . 2.4 Sep 07 SGP15N120 SGW15N120 PG-TO220-3-1 Power Semiconductors 9 Rev. 2.4 Sep 07
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k06t60

Abstract: igbt k06t60 Power Supply Trench and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 (TO-220AB) - , E Type IKP06N60T Ordering Code PG-TO-220-3-1 Q67040S4679 Maximum Ratings Parameter , RthJA PG-TO220-3-1 RthJCD PG-TO220-3-1 RthJC PG-TO220-3-1 Symbol Conditions IKP06N60T p Max. Value , Semiconductors 11 Rev. 2.1 Jan 05 TrenchStop series ^ TO-220AB PG-TO220-3-1 symbol min A B C D E F G
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k06t60 igbt k06t60 K06T60

K15N60

Abstract: k15n60 equivalent offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 , Package Ordering Code K15N60 PG-TO-220-3-1 Q67040-S4251 K15N60 PG-TO-247-3-1 Q67040-S4243 Symbol , , junction ­ case Thermal resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-1 62 40 RthJCD 1.7 , M Hz V C C = 4 80V, I C = 15A V G E = 1 5V PG-TO-220-3-1 PG-TO-247-3-1 V G E = 1 5V, t S C 10 µ s V , Rev. 2 Jan 05 SKP15N60 SKW15N60 PG-TO220-3-1 TO-220AB symbol dimensions [mm] min max 10.30
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k15n60 equivalent k15n60 ic equivalent igbt k15n60 K15N60 600v 15a

k15N60

Abstract: k15n60 ic equivalent PG-TO-220-3-1 - parallel switching capability (TO-220AB) · Very soft, fast recovery anti-parallel , PG-TO-247-3 VCE IC VCE(sat) Tj SKP15N60 600V 15A 2.3V 150°C K15N60 PG-TO-220-3-1 , resistance, RthJA 62 PG-TO-247-3-1 junction ­ ambient PG-TO-220-3-1 40 Electrical , V C C = 48 0 V, I C =15A - 76 99 nC PG-TO-220-3-1 - 7 - nH PG-TO , Sep 08 SKP15N60 SKW15N60 PG-TO220-3-1 11 Rev. 2.3 Sep 08 SKP15N60 SKW15N60
Infineon Technologies
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SKP15N60 or equivalent SKW15N60 K15N60 K15N

GP07N120

Abstract: SGP07N120 switching capability G E PG-TO-220-3-1 1 · Qualified according to JEDEC for target , Package GP07N120 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Value Unit , Thermal resistance, 62 PG-TO-220-3-1 junction ­ ambient Electrical Characteristic, at Tj = 25 °C , SGP07N120 PG-TO220-3-1 Power Semiconductors 9 Rev. 2.3 Sep 07 SGP07N120 i,v tr r =tS
Infineon Technologies
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SGP07N120 equivalent ir igbt 1200V 10A

g10n60

Abstract: SGP02N60 distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK) PG-TO-220-3-1 - parallel , 150°C G10N60 600V 2A 2.2V 150°C G10N60 E PG-TO-220-3-1 SGD02N60 G , resistance, PG-TO-220-3-1 62 RthJA PG-TO-252-3-1 50 junction ­ ambient 1) SMD version , Sep 07 SGP02N60 SGD02N60 PG-TO220-3-1 9 Rev. 2.3 Sep 07 SGP02N60 SGD02N60
Infineon Technologies
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pspice high frequency igbt PG-TO-252-3-11

G20N60

Abstract: G20N60 IGBT ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 , 600V IC 20A 20A VCE(sat) 2.4V 2.4V Tj 150°C 150°C Marking G20N60 G20N60 Package PG-TO-220-3-1 , resistance, junction ­ ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.7 K/W Symbol Conditions Max , PG-TO220-3-1 9 Rev. 2.2 Sep 07 SGP20N60 SGW20N60 PG-TO247-3-21 10 Rev. 2.2 Sep 07
Infineon Technologies
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G20N60 IGBT

g20n60hs

Abstract: IC2020 temperature - very tight parameter distribution · · · · G E PG-TO-220-3-1 PG-TO-247-3-21 High , / VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Marking G20N60HS G20N60HS Package PG-TO-220-3-1 , , junction ­ case Thermal resistance, junction ­ ambient RthJC RthJA PG-TO-220-3-1 PG-TO-247-3-21 0.7 62 40 K , Rev 2.3 Sep 07 SGP20N60HS SGW20N60HS PG-TO220-3-1 Power Semiconductors 9 Rev 2.3
Infineon Technologies
Original
IC2020

g20n60

Abstract: G20N60 IGBT - high ruggedness, temperature stable behaviour - parallel switching capability C G PG-TO-220-3-1 , PG-TO-220-3-1 SGW20N60 600V 20A 2.4V 150°C G20N60 PG-TO-247-3 Type Maximum , resistance, RthJC junction ­ case Thermal resistance, RthJA PG-TO-220-3-1 62 PG-TO , Rev. 2.4 Nov 09 SGP20N60 SGW20N60 PG-TO220-3-1 9 Rev. 2.4 Nov 09 SGP20N60
Infineon Technologies
Original
igbt 400V 20A g20n60 G 180W

G06N60

Abstract: PG-TO-220-3-1 distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK) PG-TO-220-3-1 - parallel , 2.3V 150°C G06N60 PG-TO-220-3-1 SGD06N60 600V 6A 2.3V 150°C G06N60 PG-TO , case RthJA Thermal resistance, PG-TO-220-3-1 62 RthJA PG-TO-252-3-1 50 junction , Sep 07 SGP06N60 SGD06N60 PG-TO220-3-1 9 Rev. 2.2 Sep 07 SGP06N60 SGD06N60 P-TO252
Infineon Technologies
Original

K15N60

Abstract: SKP15N60 K15N60 offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 , Package K15N60 PG-TO-220-3-1 K15N60 PG-TO-247-3-21 Symbol VCE IC Value 600 31 15 Unit V A , RthJA PG-TO-220-3-1 PG-TO-247-3-1 62 40 RthJCD 1.7 RthJC 0.9 K/W Symbol Conditions Max. Value Unit , PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C 10 µ s V C C 6 0 0 V, Tj 150°C 2) Allowed , Rev. 2.2 Sep 07 SKP15N60 SKW15N60 PG-TO220-3-1 11 Rev. 2.2 Sep 07 SKP15N60
Infineon Technologies
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SKP15N60 K15N60
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