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PF08109B Datasheet

Part Manufacturer Description PDF Type
PF08109B Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone Original
PF08109B Renesas Technology MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone Original
PF08109B-TB Samsung Electronics Micro Module Specifications Scan

PF08109B

Catalog Datasheet MFG & Type PDF Document Tags

PF08109B

Abstract: Hitachi DSA00103 PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE , : GND PF08109B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply , the E-GSM-band (880 MHz to 915 MHz), and the DCS1800-band (1710 MHz to 1785 MHz). 2 PF08109B , , 3 PF08109B Electrical Characteristics for DCS1800 mode (Tc = 25°C) Test conditions unless , Condition DCS DCS = 32.7dBm, = 0 to 32.7dBm PF08109B Characteristic Curves High mode, f =
Hitachi Semiconductor
Original
Hitachi DSA00103 pf08109 F 915 ADE-208-821C RF-O-12 DCS1800- D-85622

GSM repeater circuit

Abstract: PF08109B products contained therein. PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band , : Pin DCS G: GND PF08109B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit , .3, Feb. 2001, page 2 of 23 PF08109B Electrical Characteristics for E-GSM mode (Tc = 25°C) Test , , Vtxlo = 0.1V, Vapc GSM = controlled Rev.3, Feb. 2001, page 3 of 23 PF08109B Electrical , , Vapc DCS = controlled PF08109B Characteristic Curves High mode, f = 880 MHz 55 40 20
Renesas Technology
Original
GSM repeater circuit dual gsm repeater

PF08109B

Abstract: circuit on how to make a simple amplifire PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar. 2000 Application · Dual band Amplifier for E-GSM (880 to 915 MHz) and , ), and the DCS1800-band (1710 to 1785 MHz). PF08109B Electrical Characteristics for DC (Tc = 25 , , = 0 to 35.5dBm, Vtxlo = 0.1V PF08109B Electrical Characteristics for DCS1800 mode (Tc = 25 , to 32.7dBm 3 PF08109B Package Dimensions Unit: mm 1.8 ± 0.2 8 G 7 5 G G
Hitachi Semiconductor
Original
circuit on how to make a simple amplifire 327-DB Hitachi DSA00352 GSM module operation amplifire circuit applications power amplifire

PF08109B

Abstract: ic PF08109B . /RO, (H fU u ÌUL± 9 CALE REÛO. NTS title PF08109B-TB CAS SDTYP^ D O : CLASS m M , Customer name SAMSUNG ELECTRONICS Co.Ltd Customer type Hitachi type PF08109B-TB Application RF , . PF08109B-TB CAS Hitachi,Ltd. Tokyo Japan Circuite Division 345 f" 2 12345G7B90 , , sixryt»ed,o: class. to WORK 3H: No i ! i i |m he reso. WVN. TITLE PF08109B-TB CAS , . t(tle PF08109B-TB CAS spftype dd; CLASS. Hitachi, Ltd. Tokyo Japan M WORK 98«: m
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OCR Scan
ic PF08109B PMM Bd-5701 ME0104 h9908010n8 ASQC-21 H9906 H9908010NS 96082T H9908010N8 6S96082T 22-TT 6596082X220

74ls111

Abstract: 2SA872 spice PF01412A PF0210 PF0414A PF0414B PF0415A PF08103A PF08103B PF08109b Transistors\Power Mos FETs\µ-Fet 2SJ574
Hitachi Semiconductor
Original
74ls111 2SA872 spice 74LS122 spice model 74ls221 Spice BC240 hitachi mosfet audio application note 2SB715 2SB738 2SB740 2SB831 2SC1213 2SC1344

7054F

Abstract: BC564A pf01411a pf01411b pf01412a pf04115b pf0414a pf0414b pf0415a pf08103a pf08103b pf08107b pf08107bp pf08109b
Hitachi Semiconductor
Original
7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 2SD755/56/56A

PF08122B

Abstract: PF08109B the Hitachi PF08109B, PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF
Linear Technology
Original
LTC4400-1 LTC4400-2 pf08122 Li ION spice model charge POWER AMPLIFIER CIRCUIT DIAGRAM 10000 LTC4400-1/LTC4400-2 800MH LT1932 LT1944

pf08123

Abstract: the Hitachi PF08109B, PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF
Linear Technology
Original
pf08123 300MH LTC4401-1/LTC4401-2 LT5502 400MH LT5503 LT5504

PF08109B

Abstract: PF08122B PF08109B, PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF power amplifiers
Linear Technology
Original
33E-12 AN rf power amplifier nd1 marking code GGX5 RF POWER amplifier 44E-12 LTC4401 LTC5505 LTC5507 LTC5508 LT5511 LT5512

vbg marking code SOT23

Abstract: CAPACITOR 33PF PF08109B, PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF power amplifiers
Linear Technology
Original
vbg marking code SOT23 CAPACITOR 33PF schottky diode 2GHz to 3GHz

PF08109B

Abstract: pf08109 RF power amplifiers operating in the 800MHz to 2.7GHz range. Examples include the Hitachi PF08109B
Linear Technology
Original