MIL-STD-883 223/U - Datasheet Archive

 

CAN bus ESD protection diode Rev. 01 - 22 December 2006 Product data sheet 1. Product profile 1.1 General description PESD2CAN in

 

PESD2CAN CAN bus ESD protection diode Rev. 01 - 22 December 2006 Product data sheet 1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features I Due to the integrated diode structure only one small SOT23 package is needed to protect two CAN bus lines I Max. peak pulse power: PPP = 230 W at tp = 8/20 µs I Low clamping voltage: VCL = 41 V at IPP = 5 A I Ultra low leakage current: IRM < 1 nA I ESD protection up to 30 kV I IEC 61000-4-2, level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 5 A at tp = 8/20 µs I Small SMD plastic package 1.3 Applications I CAN bus protection I Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 24 V - 25 30 pF Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V PESD2CAN NXP Semiconductors CAN bus ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 common cathode Simplified outline Symbol 3 1 1 2 3 2 006aaa155 3. Ordering information Table 3. Ordering information Type number Package Name Version - PESD2CAN Description plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PESD2CAN 6R* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 µs peak pulse current tp = 8/20 µs Min Max Unit [1][2] - 230 W [1][2] - 5 A Per diode PPP IPP Per device Tj junction temperature - 150 °C Tamb ambient temperature -65 +150 °C Tstg storage temperature -65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. PESD2CAN_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 - 22 December 2006 2 of 11 PESD2CAN NXP Semiconductors CAN bus ESD protection diode Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit [1][2] - 30 kV [2] - 400 V [1][2] - 16 kV Per diode VESD machine model MIL-STD-883 MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883 MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 001aaa630 120 IPP 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e-t 50 % IPP; 20 µs 40 10 % t tr = 0.7 ns to 1 ns 0 0 10 20 30 30 ns 40 t (µs) 60 ns Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD2CAN_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 - 22 December 2006 3 of 11 PESD2CAN NXP Semiconductors CAN bus ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 24 V IRM reverse leakage current VRWM = 24 V -