PDU-G101 100-PDU-G101 - Datasheet Archive

 

Gallium Nitride (GaN), Ultra Violet (U.V.) Photodiode Type PDU-G101 DETECTORS INC. PACKAGE DIMENSIONS inch [mm] HEADER 0.100

 

PHOTONIC Gallium Nitride (GaN), Ultra Violet (U.V.) Photodiode Type PDU-G101 PDU-G101 DETECTORS INC. PACKAGE DIMENSIONS inch [mm] HEADER 0.100 [2.54] PIN CIRCLE C L 0.210 [5.33] WINDOW CAP (WELDED) 0.155 [3.98] WIRE BONDS 0.055 [1.40] 45° Ø0.018 [0.46] VIEWING ANGLE 65° 0.500 [12.70] Ø0.185 [4.70] CHIP 0.150 [3.81] 0.044 [1.12] SQ ANODE Ø0.031 [Ø0.80] ACTIVE AREA 3X CATHODE CATHODE ANODE CASE GROUND TO-46 HERMETIC CAN PACKAGE ACTIVE AREA = 0.50 mm2 DESCRIPTION The PDU-G101 PDU-G101 is a GaN, planar passivated U.V. photodiode. Spectral range from 200 nm to 350 nm with a 0.80 mm diameter (.50 mm2) active area. Packaged in a isolated TO-46 with U.V. transmitting window can. IL Light Current O 0.5 C C mA 10 -4 10 -5 10 -6 *1/16 inch from case for 3 secs max ISC Short Circuit Current H = 100 fc, 360 nm ID Dark Current % Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance unless otherwise noted) MIN TYP 40 30 H = 0, VR = 10 mV RSH 130 UNITS mA 150 pA MW H = 0, VR = 10 mV -8 % / oC H = 0, V R = 10 V* 30 Spectral Application Range Spot Scan lp Spectral Response - Peak Spot Scan VBR Breakdown Voltage I = 10 mA Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 1 KW VR = 3 V 50 MAX 75 l range tr 00 WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC SYMBOL CHARACTERISTIC TEST CONDITIONS NEP =1 500 Soldering Temperature* +125 QE 475 TS -40 C -3 450 Operating Temperature Range O -2 10 425 TO O -1 10 400 -55 +150 +240 Storage Temperature 10 375 V 350 100 UNITS 325 Reverse Voltage MAX 300 TSTG MIN 275 VBR SPECTRAL RESPONSE (TA=25OC unless otherwise noted) 250 ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER APPLICATIONS Flame detectors U.V. sensors U.V. monitors U.V. instrumentation RESPONSIVITY (A/W) FEATURES 0.194 A/W @ 360 nm High shunt resistance 360 nm peak response Short wavelength resp. 200 50 425 360 3 pF nm nm V 1.5x10-14 W/ Hz 50 nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. * f = 1MHz [FORM NO. 100-PDU-G101 100-PDU-G101 REV B]