PDM505HC VGS10V ID25A VDS15V VDS25V IS50A 150MAX

PDM505HC PDM505HC Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Duty=50% Continuous Drain Current

MOSFET 50A 500V PDM505HC PDM505HC PDM505HC PDM505HC Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage Mounting Torque 1 VGS=0V Unit V VGSS Gate-Source Voltage Grade PDM505HC PDM505HC 500 Symbol ±20 V ID 50c=25 35c=25 A IDM 100c=25 A PD 350c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol Condition Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID3mA 2 3.1 4 V VGS±20V, VDS0V 0.3 A rDS on VGS10V VGS10V, ID25A ID25A 110 120 m VDS on VGS10V VGS10V, ID25A ID25A 3.2 3.5 V gfg VDS15V VDS15V, ID25A ID25A 30 S 8.4 nF 1.1 nF Crss 0.24 nF ton d 92 ns 110 ns 250 ns 68 ns IDSS VGS th IGSS Ciss Coss tr toff d VGS0V VDS25V VDS25V f1MHz VDD1/2VDSS ID25A ID25A VGS-5V, 10V RG5 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IS Condition D. C. trr Qr Unit IS50A IS50A -diS/dt100A/ s 35 A 100 A IS50A IS50A ISM VSD Maximum Value Min. Typ. Max. 1.5 V 80 ns 0.18 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rth j-c - Thermal Resistance, Case to Heatsink Rth c-f Condition Maximum Value Min. Typ. Max. MOSFET 0.36 Diode 2.0 Mounting surface flat, smooth, and greased 0.1 Unit 326 /W Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage TC=25 250s Pulse Test 60 6V 40 20 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0V f=1MHz Ciss 8 6 4 Coss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) RG=5 VDD=250V TC=25 80s Pulse Test tr 100 td(on) tf 50 1 2 5 10 20 DRAIN CURRENT ID (A) 50 100 Fig. 10 Maximum Safe Operating Area TC=25 Tj=150MAX 150MAX Single Pulse 200 8 4 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 1 60 Tj=25 40 0 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) DC 0.5 1 2 DRAIN CURRENT ID (A) tr td(on) 1 tf 0.5 0.2 0.05 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) 327 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 200 Fig. 9 Typical Reverse Recovery Characteristics 80 Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 2 0.2 600 Tj=125 1ms 10ms 160 ID=25A VDD=250V TC=25 80s Pulse Test 5 250s Pulse Test 20 5 0 40 80 120 JUNCTION TEMPERATURE Tj () 0.1 100s Operation in this area is limited by RDS (on) 15A td(off) 12 50 10 4 ID=35A 10s 100 25A Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 20 20 8 0 -40 IS=50A IS=25A Tj=125 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) td(off) 12 16 100 200 ID=50A VDD=100V 250V 400V 120 SOURCE CURRENT IS (A) SWITCHING TIME t (ns) 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics 500 10 0 VGS=10V 250s Pulse Test 16 2 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 15A 2 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 10 0 25A Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 12 2 4 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 0 5V ID=50A NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] DRAIN CURRENT ID (A) 8V TC=25 250s Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) VGS=10V SWITCHING TIME t (s) 80 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 200 trr 100 50 IR 20 10 5 1.8 0 100 200 300 400 -dis/dt (A/s) 500 600 2 1 0.5 0.2 0.1 Per Unit Base Rth(j-c)=0.36/W 1 Shot Pulse 0.05 0.02 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 2 1 0.5 0.2 0.1 Per Unit Base Rth(j-c)=2.0/W 1 Shot Pulse 0.05 0.02 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10