PDB-C611 PDB-V611 PDB-C611-2 PDB-V611-2 PDB-C611-3 PDB-V611-3 PDB-C611-1 - Datasheet Archive

 

Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C611 Photovoltaic Type PDB-V611 DETECTORS INC.

 

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C611 PDB-C611 Photovoltaic Type PDB-V611 PDB-V611 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 1.375 [34.93] 1.375 [34.93] 1.375 [34.93] 1.00 [25.4] 1.250 [31.75] 0.096 [2.44] 0.096 [2.44] 0.027 [0.69] 0.096 [2.44] ANODE, RED WIRE ANODE, BUSS WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] BARE CHIP 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE ACTIVE AREA = 52.0 mm2 PDB-C611-2 PDB-C611-2 PDB-V611-2 PDB-V611-2 APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused Optical encoder Position sensor Industrial controls Instrumentation silicon solderable photodiode. The PDB-V611 PDB-V611 cell is designed for low noise, photovoltaic applications. The PDB-C611 PDB-C611 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) C TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 C C 0.3 0.2 0.1 0 mA 1200 O -40 +125 -40 +1255 0.4 0% 1100 V 0 =1 QE 900 25 0.5 1000 Storage Temperature 75 0.6 800 TSTG MAX 700 Reverse Voltage MIN 0.7 600 V BR MAX UNITS 400 MIN SPECTRAL RESPONSE RESPONSIVITY (A/W) PARAMETER PDB-C611 PDB-C611 PDB-V611 PDB-V611 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 190 FEATURES SYMBOL PDB-C611-3 PDB-C611-3 PDB-V611-3 PDB-V611-3 500 PDB-C611-1 PDB-C611-1 PDB-V611-1 PDB-V611-1 WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 5 V* RSH range Spectral Application Range Spot Scan p Breakdown Voltage 585 NEP tr I = 10 m A Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 K VR = 5 V* 650 50 540 100 mA 600 30 UNITS 60 nA 20 M -8 -8 % / oC 325 5 Spectral Response - Peak Spot Scan V BR PDB-V611 PDB-V611 MIN TYP MAX MIN TYP MAX H = 0, VR = 5 V* Shunt Resistance PDB-C611 PDB-C611 8500 pF 10 350 8 1100 350 940 25 6 x 10 715 nm 940 50 -13 1100 5 TYP nm 15 V -13 2 x 10 TYP 1800 W/ Hz nS *VR = 100 mV on Photovoltaic type *VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C611-V611 100-PDB-C611-V611 REV B ]