PD60131J IR21531/ IR21531D IR21531/IR21531D IR2155 IR2151 IR21531 IR2153 - Datasheet Archive

 

IR21531/ IR21531D SELF-OSCILLATING HALF-BRIDGE DRIVER Features · · · · · · ·

 

Preliminary Data Sheet No. PD60131J PD60131J IR21531/ IR21531/ IR21531D IR21531D SELF-OSCILLATING HALF-BRIDGE DRIVER Features · · · · · · · · · · · · · · Product Summary Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on CT pin Increased undervoltage lockout Hysteresis (1V) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Lower di/dt gate driver for better noise immunity Low side output in phase with RT Internal 50nsec (typ.) bootstrap diode (IR21531D IR21531D) Excellent latch immunity on all inputs and outputs ESD protection on all leads VOFFSET 600V max. Duty Cycle 50% Tr/Tp 80/40ns Vclamp 15.6V Deadtime (typ.) 0.6 µs Packages Description The IR21531/IR21531D IR21531/IR21531D are an improved version of the popular IR2155 IR2155 and IR2151 IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more 8 Lead PDIP 8 Lead SOIC stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins. Typical Connections IR21531 IR21531 IR21531D IR21531D 600V MAX VCC 600V MAX VB VCC HO RT Shutdown HO VS CT LO COM VB VS RT CT Shutdown LO COM IR21531/IR21531D IR21531/IR21531D Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VB VS Min. Max. -0.3 High side floating supply voltage 625 VB + 0.3 High side floating supply offset voltage V B - 25 VHO High side floating output voltage VS - 0.3 VB + 0.3 VLO Low side output voltage -0.3 VCC + 0.3 VRT RT pin voltage -0.3 VCC + 0.3 VCT CT pin voltage -0.3 VCC + 0.3 ICC Supply current (note 1) - 25 IRT RT pin current -5 5 -50 50 Units dVs/dt PD Allowable offset voltage slew rate Maximum power dissipation @ TA +25°C - 1.0 - 0.625 (8 Lead DIP) - 125 (8 Lead SOIC) RthJA (8 Lead DIP) (8 Lead SOIC) - 200 Thermal resistance, junction to ambient TJ Junction temperature -55 Storage temperature -55 150 TL Lead temperature (soldering, 10 seconds) - mA V/ns W °C/W 150 TS V 300 °C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol Definition Min. Max. VCC - 0.7 VCLAMP -3.0 (note 2) 600 Supply voltage 10 VCLAMP Supply current (note 3) 5 mA -40 125 °C VBS High side floating supply voltage VS Steady state high side floating supply offset voltage VCC ICC TJ Junction temperature Note 1: Note 2: Note 3: Units V This IC contains a zener clamp structure between the chip V CC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V. Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin. 2 IR21531/IR21531D IR21531/IR21531D Recommended ComponentValues Symbol Min. Max. RT Component Timing resistor value 10 - Units k CT CT pin capacitor value 330 - pF IR21531 IR21531 RT vs Frequency IR2153 IR2153 RT vs Frequency 1000000 Frequency (Hz) 100000 330pf 10000 470pF 1nF 1000 CT Values 2.2nF 4.7nF 10nF 100 10 10 100 1000 10000 RT (ohms) 3 100000 1000000 IR21531/IR21531D IR21531/IR21531D Electrical Characteristics VBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Low Voltage Supply Characteristics Symbol Definition Min. Typ. Max. VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP 8.1 7.2 0.5 - - 14.4 9.0 8.0 1.0 75 500 15.6 9.9 8.8 1.5 150 950 16.8 Min. Typ. Max. - - - 0 30 4.0 10 50 5.0 V V CC=VCCUV+ + 0.1V - 0.5 - - 50 1.0 µA V VB = VS = 600V IF = 250mA Rising V CC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage Units Test Conditions V µA V VCC VCCUVICC = 5mA Floating Supply Characteristics Symbol Definition IQBSUV IQBS VBSMIN ILK VF Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current Bootstrap diode forward voltage (IR21531D IR21531D) Units Test Conditions µA VCC VCCUV- Oscillator I/O Characteristics Symbol Definition Min. Typ. Max. fosc Oscillator frequency d ICT ICTUV VCT+ VCTVCTSD VRT+ RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper CT ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level RT output voltage, VCC - VRT VRT- Low-level RT output voltage VRTUV VRTSD UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT 19.4 94 48 - 0.30 - - 1.8 - - - - - - 20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 20.6 106 52 1.0 1.2 - - 2.4 50 300 50 300 100 50 - 10 300 4 Units Test Conditions kHz % uA mA RT = 36.9k RT = 7.43k fo < 100kHz VCC = 7V V mV IRT = 100µA IRT = 1mA IRT = 100µA IRT = 1mA VCC VCCUVIRT = 100µA, VCT = 0V IRT = 1mA, VCT = 0V IR21531/IR21531D IR21531/IR21531D Electrical Characteristics (cont.) Gate Driver Output Characteristics Symbol Definition Min. VOH High level output voltage, V BIAS -VO VOL Low-level output voltage, VO VOL_UV UV-mode output voltage, VO tr tf tsd td Output rise time Output fall time Shutdown propogation delay Output deadtime (HO or LO) Typ. - - - 0 0 0 - - - 0.35 80 45 660 0.60 Max. 100 100 100 Units Test Conditions mV 150 100 - 0.85 nsec µsec Lead Definitions Symbol Description VCC RT CT COM LO VS HO VB Logic and internal gate drive supply voltage Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low side gate driver output High voltage floating supply return High side gate driver output High side gate driver floating supply Lead Assignments 8 Lead DIP 8 Lead SOIC IR21531 IR21531 / IR21531D IR21531D IR21531S IR21531S NOTE: The IR21531D IR21531D is offered in 8 lead DIP only. 5 IO = OA IO = OA IO = OA VCC VCCUV- IR21531/IR21531D IR21531/IR21531D Functional Block Diagram for IR21531 IR21531 RT VB R Q HV LEVEL SHIFT + R R S + - Q PULSE FILTER R HO S Q PULSE GEN DEAD TIME VS VCC R/2 CT 15.6V + R/2 LOGIC LO DELAY DEAD TIME UV DETECT COM Functional Block Diagram for IR21531D IR21531D RT VB R Q HV LEVEL SHIFT + R R + - S Q DEAD TIME PULSE FILTER R PULSE GEN VS D1 Q VCC R/2 CT 15.6V + R/2 HO S LOGIC DELAY DEAD TIME UV DETECT LO COM NOTE: The D1 is a separate die. 6 IR21531/IR21531D IR21531/IR21531D 8 Lead PDIP 01-3003 01 8 Lead SOIC 01-0021 08 7 IR21531/IR21531D IR21531/IR21531D V CLAMP Vccuv+ Vcc RT RT ,C T 2/3 CT 1/3 td LO td HO Figure 1. Input/Output Timing Diagram RT 50% 50% (HO) (LO) 90% HO 10% DT LO 90% 10% Figure 3. Deadtime Waveform Definitions Figure 2. Switching Time Waveform Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: + 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: + 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D.207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99 8