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Part : PBSS4220V,115 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : $0.0663 Price Each : $0.0724
Part : PBSS4220V115 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 12,185 Best Price : $0.12 Price Each : $0.15
Part : PBSS4220V Supplier : NXP Semiconductors Manufacturer : America II Electronics Stock : 8,000 Best Price : - Price Each : -
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PBSS4220V Datasheet

Part Manufacturer Description PDF Type
PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor Original
PBSS4220V,115 NXP Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor; Package: SOT666 (SS-Mini); Container: Tape reel smd Original
PBSS4220VT/R NXP Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor Original

PBSS4220V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: status Change notice Supersedes PBSS4220V_2 20091211 Product data sheet - PBSS4220V_1 , A - 0.3 A junction temperature PBSS4220V_2 Product data sheet A - 0.3 , derating curves PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 - , junction to ambient as a function of pulse time; typical values PBSS4220V_2 Product data sheet , ; IE = ie = 0 A; f = 1 MHz - 11 - pF [1] Pulse test: tp 300 s; 0.02. PBSS4220V_2 NXP Semiconductors
Original
PBSS5220V transistor smd marking CODE n6
Abstract: dissipation Tamb 25 °C Tj junction temperature PBSS4220V_1 Product data sheet © Koninklijke , derating curves PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All , values PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights , . PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved , current; typical values PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V Philips Semiconductors
Original
MARKING CODE SMD IC
Abstract: PBSS4220V_2 Product data sheet A - 0.3 W - 0.5 W [3][4] Tj 0.6 [2][4 , 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4220V_2 Product , function of pulse time; typical values PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights , . PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 â'" 11 December 2009 , ; typical values PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 â NXP Semiconductors
Original
Abstract: PBSS4160V DSS4160V NSS20200L DSS20200L 2SB1697 2DB1697 PBSS4220V DSS4220V NSS20201L Diodes
Original
PBSS4140U MMJT9435 PBSS4140V DSS4140V PBSS4160U DSS4240T PBSS4240T DSS5240T PBSS4160 AEC-Q101 DSS4140U DMJT9435 2SA1797
Abstract: SOT666 PBSS4140V PBSS4160V PBSS4220V PBSS4240V Under development * PNP/NPN Low VCEsat (BISS Philips Semiconductors
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SC-75 PEMB20 PEMB15 PEMB11 PEMB24 PEMB10 PEMH15 SC-79
Abstract: PBSS4140S PBSS4350S PBSS8110S/AS PBSS2515M PBSS2540M PBSS4220V PBSS4140V PBSS4240V PBSS4160V NXP Semiconductors
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PBSS301ND PBSS301NX SC-73 PBSS301NZ biss 0001 pbss4160dpn SOT363 flash PBLS2001D PBSS4350Z, PBSS4350X, PBSS4350T SC-74 SC-62
Abstract: PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 - 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller NXP Semiconductors
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MOSFET transistor smd marking code n7-
Abstract: PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 â'" 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features Ì Ì Ì Ì Ì Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat NXP Semiconductors
Original
Abstract: PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 02 - 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat Philips Semiconductors
Original
NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
Abstract: PBSS2515M PBSS2540M PBSS4220V PBSS4140V PBSS4240V PBSS4160V PBSS2515E PBSS2540E PBSS3515M PBSS3540M NXP Semiconductors
Original
HXSON12 HXSON16 PMZ250UN marking PESD12VS1UL PESD12VS2UQ PESD5V0F1BL PESD5Z12 PMBT3904M SC-101 HXS0N12 HXS0N16
Abstract: 2 30 1) 20 250 5.8 0.29 33 1) PBSS4220V PBSS4320T 0.2 5.0 NXP Semiconductors
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PBHV8140Z PBSS4160DS MSE264 PBSS4032PT PBSS4021PT PBSS4021NT M3D109 PBHV8115Z PBHV8215Z PBHV8115T PBHV8540Z
Abstract: PBSS4160DS PBSS4160K PBSS4160T PBSS4160U PBSS4160V PBSS4220V PBSS4230T PBSS4240DPN PBSS4240T NXP Semiconductors
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IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier TC124EE PMD9010D PMEG3020BER PMSS3904 PTVS48VS1UR PDTA143XU
Abstract: 390 320 300 400 320 390 < 500 < 250 < 200 PBSS4220V PBSS4320T PBSS4230T PBSS4240V Philips Semiconductors
Original
TDA8947J BUK2114 BUK2114-50SYTS SAA7136E saa7117 MPSA92 168 saa7136 1N4148 1N4531 1PS10SB62 1PS10SB63 1PS10SB82 1PS181