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Part : PBSS4220V,115 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : $0.0559 Price Each : $0.0611
Part : PBSS4220V115 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 12,185 Best Price : $0.12 Price Each : $0.15
Part : PBSS4220V Supplier : NXP Semiconductors Manufacturer : America II Electronics Stock : 8,000 Best Price : $8778454392.00 Price Each : $8778454392.00
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PBSS4220V Datasheet

Part Manufacturer Description PDF Type
PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor Original
PBSS4220V,115 NXP Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor; Package: SOT666 (SS-Mini); Container: Tape reel smd Original
PBSS4220VT/R NXP Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor Original

PBSS4220V

Catalog Datasheet MFG & Type PDF Document Tags

transistor smd marking CODE n6

Abstract: PBSS4220V status Change notice Supersedes PBSS4220V_2 20091211 Product data sheet - PBSS4220V_1 , A - 0.3 A junction temperature PBSS4220V_2 Product data sheet A - 0.3 , derating curves PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 - , junction to ambient as a function of pulse time; typical values PBSS4220V_2 Product data sheet , ; IE = ie = 0 A; f = 1 MHz - 11 - pF [1] Pulse test: tp 300 s; 0.02. PBSS4220V_2
NXP Semiconductors
Original
PBSS5220V transistor smd marking CODE n6

transistor smd marking CODE n6

Abstract: PBSS4220V dissipation Tamb 25 °C Tj junction temperature PBSS4220V_1 Product data sheet © Koninklijke , derating curves PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All , values PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights , . PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved , current; typical values PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V
Philips Semiconductors
Original
MARKING CODE SMD IC
Abstract: PBSS4220V_2 Product data sheet A - 0.3 W - 0.5 W [3][4] Tj 0.6 [2][4 , 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4220V_2 Product , function of pulse time; typical values PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights , . PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 â'" 11 December 2009 , ; typical values PBSS4220V_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 â NXP Semiconductors
Original

npn pnp transistor bipolar cross reference

Abstract: PBSS4240T PBSS4160V DSS4160V NSS20200L DSS20200L 2SB1697 2DB1697 PBSS4220V DSS4220V NSS20201L
Diodes
Original
PBSS4140U MMJT9435 PBSS4140V PBSS4160U DSS4240T DSS5240T npn pnp transistor bipolar cross reference PBSS4240T PBSS4160 2SA1797 EQUIVALENT AEC-Q101 DSS4140U DMJT9435 2SA1797

PEMB10

Abstract: PEMH15 SOT666 PBSS4140V PBSS4160V PBSS4220V PBSS4240V Under development * PNP/NPN Low VCEsat (BISS
Philips Semiconductors
Original
SC-75 PEMB20 PEMB15 PEMB11 PEMB24 PEMB10 PEMH15 PBSS2515VS BAT960 SC-79

biss 0001

Abstract: PBLS2001D PBSS4140S PBSS4350S PBSS8110S/AS PBSS2515M PBSS2540M PBSS4220V PBSS4140V PBSS4240V PBSS4160V
NXP Semiconductors
Original
PBSS301ND PBSS301NX SC-73 PBSS301NZ biss 0001 PBLS2001D pbss4160dpn SOT363 flash PBSS302NX PBSS4350Z SC-74 SC-62

PBSS4220V

Abstract: PBSS5220V PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 - 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller
NXP Semiconductors
Original
Abstract: PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 â'" 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features Ì Ì Ì Ì Ì Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat NXP Semiconductors
Original

MARKING CODE SMD IC

Abstract: PBSS4220V PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 02 - 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat
Philips Semiconductors
Original
NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7

biss 0001

Abstract: PMZ250UN marking PBSS2515M PBSS2540M PBSS4220V PBSS4140V PBSS4240V PBSS4160V PBSS2515E PBSS2540E PBSS3515M PBSS3540M
NXP Semiconductors
Original
HXSON12 SC-101 PMZ250UN marking PESD5V0F1BL IP4221CZ6-XS PESD12VS1UB PESD12VS1UL HXSON16 HXS0N12 HXS0N16

PBSS4160DS

Abstract: PBHV8140Z 2 30 1) 20 250 5.8 0.29 33 1) PBSS4220V PBSS4320T 0.2 5.0
NXP Semiconductors
Original
PBHV8140Z PBSS4160DS MSE264 PBLS2021D PBSS4032PT PBSS4350Z, PBSS4350X, PBSS4350T M3D109 PBHV8115Z PBHV8215Z PBHV8115T PBHV8540Z

IP4223CZ6

Abstract: power one pmp 7.24 PBSS4160DS PBSS4160K PBSS4160T PBSS4160U PBSS4160V PBSS4220V PBSS4230T PBSS4240DPN PBSS4240T
NXP Semiconductors
Original
IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier TC124EE PMD9010D PMEG3020BER PMSS3904 PTVS48VS1UR PDTA143XU

BUK2114

Abstract: BUK2114-50SYTS 390 320 300 400 320 390 < 500 < 250 < 200 PBSS4220V PBSS4320T PBSS4230T PBSS4240V
Philips Semiconductors
Original
TDA8947J BUK2114 BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 1N4148 1N4531 1PS10SB62 1PS10SB63 1PS10SB82 1PS181