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| Part Number | Manufacturer | Description | ||||||
| 1. |  PBSS4160V T/R |
NXP Semiconductors / Philips Semiconductors | 60 V, 1 A NPN low VCEsat (BISS) transistor | Latest Datasheet | ||||
| 2. | PBSS4160V |
Philips Semiconductors / NXP Semiconductors | SMD, High Current Amp., 60V 0.9A 0.3W, Silicon NPN Transistor | 92.81 Kb | 14 Pg. | |||
| 3. | PBSS4160V |
Philips Semiconductors / NXP Semiconductors | 60 V, 1 A NPN low VCEsat (BISS) transistor | 84.51 Kb | 12 Pg. |
| « Previous 1 Next » |
| 1. |  84.52 Kb • 12 Pages |
Abstract: ... PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 23 April 2004 Objective data sheet. Table 1: Quick reference data. Symbol Parameter Conditions Min Typ Max Unit. VCEO collector-emitter ... Labels: PBSS4160V |
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| 2. |  92.82 Kb • 14 Pages |
Abstract: ... PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 31 January 2005 Product data sheet. Table 1: Quick reference data. Symbol Parameter Conditions Min Typ Max Unit. VCEO collector-emitter ... Labels: PBSS4160V |
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| 3. |  78.24 Kb • 14 Pages |
Abstract: ... NPN complement: PBSS4160V. 1.2 Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency leading to less heat generation ... Labels: PBSS4160V |
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| 4. |  70.63 Kb • 12 Pages |
Abstract: ... NPN complement: PBSS4160V. 1.2 Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces ... Labels: PBSS4160V |
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| 5. |  804.35 Kb • 44 Pages |
Abstract: ... 60 PBSS4160T PBSS4160K PBSS4160U PBSS4160V < 250 < 140 < 250. 100 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T PBSS8110Y < 200 < 120 < 200. 2.0. 20 PBSS4320T < 105 < 70 < 310. 30 PBSS4230T < 200 < 100 < 320. 40. PBSS4240V ... Labels: PBSS4160V, Application Notes, Cross Reference |
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