PBSS302PX SC-62/TO-243 PBSS302NX SC-62 MSA423 - Datasheet Archive

 

20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 01 - 23 August 2006 Product data sheet 1. Product profile 1.1 General

 

PBSS302PX PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 01 - 23 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243 SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX PBSS302NX. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - -20 V - - -5.1 A - - -10.2 A - 32 48 m VCEO collector-emitter voltage IC collector current ICM peak collector current single pulse; tp 1 ms RCEsat collector-emitter saturation resistance IC = -4 A; IB = -200 mA [1] Pulse test: tp 300 µs; 0.02. [1] PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 Simplified outline Symbol base 2 3 3 2 1 1 sym079 3. Ordering information Table 3. Ordering information Type number Package Name PBSS302PX PBSS302PX Description Version SC-62 SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS302PX PBSS302PX *5J [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 2 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -20 V VCEO collector-emitter voltage open base - -20 V VEBO emitter-base voltage open collector - -5 V IC collector current - -5.1 A ICM peak collector current single pulse; tp 1 ms - -10.2 A Ptot total power dissipation Tamb 25 °C [1] - 0.6 W [2] - 1.65 W [3] - 2.1 W Tj junction temperature - 150 °C Tamb ambient temperature -65 +150 °C Tstg storage temperature -65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa556 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 -75 -25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 3 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to ambient Typ Max Unit - - 208 K/W [2] - - 76 K/W - - 60 K/W - in free air Min [1] [3] Rth(j-a) Conditions - 20 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa557 103 Zth(j-a) (K/W) =1 0.75 102 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 4 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 102 006aaa558 =1 0.75 Zth(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa559 102 =1 0.75 Zth(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 5 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions Min Max Unit - - -100 nA - - -50 µA - collector-base cut-off VCB = -20 V; IE = 0 A current VCB = -20 V; IE = 0 A; Tj = 150 °C Typ - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A hFE DC current gain VCE = -2 V; IC = -0.5 A [1] 250 370 - VCE = -2 V; IC = -1 A [1] 250 340 - VCE = -2 V; IC = -2 A [1] 200 290 - VCE = -2 V; IC = -4 A [1] 150 220 - VCE = -2 V; IC = -6 A [1] 100 160 - IC = -0.5 A; IB = -50 mA [1] - -25 -35 mV IC = -1 A; IB = -50 mA [1] - -45 -65 mV IC = -1 A; IB = -10 mA [1] - -70 -100 mV IC = -2 A; IB = -40 mA [1] - -90 -130 mV IC = -4 A; IB = -200 mA [1] - -130 -190 mV IC = -4 A; IB = -400 mA [1] - -120 -175 mV IC = -4 A; IB = -40 mA [1] - -200 -300 mV IC = -5.1 A; IB = -255 mA [1] - -160 -230 mV collector-emitter IC = -4 A; IB = -200 mA saturation resistance I = -4 A; I = -40 mA C B [1] - 32 48 m [1] - 50 75 m IC = -1 A; IB = -100 mA [1] - -0.82 -0.9 V IC = -4 A; IB = -400 mA [1] - -0.93 -1.05 V [1] - -0.76 -0.85 V - 10 - ns VCEsat RCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage VBEon base-emitter turn-on VCE = -2 V; IC = -2 A voltage td delay time tr rise time - 55 - ns ton turn-on time - 65 - ns ts storage time - 205 - ns tf fall time - 145 - ns toff turn-off time fT transition frequency Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz [1] VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A VCE = -10 V; IC = -0.1 A; f = 100 MHz - ns 130 - MHz - 130 160 pF Pulse test: tp 300 µs; 0.02. PBSS302PX PBSS302PX_1 Product data sheet 350 - © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 6 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 006aaa596 1000 hFE 006aaa602 -14 IC (A) -12 IB (mA) = -100 800 -90 -80 -70 -60 -50 -40 -30 -10 (1) 600 -8 -6 400 (2) 200 (3) -20 -4 -10 -2 0 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = -2 V 0 -1 0 -2 -3 -4 -5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa597 -1.2 VBE (V) Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aaa600 -1.2 VBEsat (V) -0.8 -0.8 (1) (1) (2) (2) -0.4 -0.4 (3) (3) 0 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = -2 V 0 -10-1 -1 -10 -102 -103 -104 IC (mA) IC/IB = 20 (1) Tamb = -55 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 7 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 006aaa598 -1 006aaa599 -10 VCEsat (V) VCEsat (V) -1 -10-1 -10-1 -10-2 (1) (2) (3) (1) (2) -10-2 (3) -10-3 -10-1 -1 -10 -102 -103 -104 IC (mA) -10-3 -10-1 -1 -10 -102 -103 -104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = -55 °C (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa601 102 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat () RCEsat () 006aaa603 103 (1) 102 (2) 10 (3) 10 (1) (2) (3) 1 1 10-1 10-2 -10-1 10-1 -1 -10 -102 -103 -104 IC (mA) 10-2 -10-1 -1 -10 -102 -103 -104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = -55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 8 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 8. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 (probe) 450 oscilloscope R2 VI DUT R1 mgd624 VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A Fig 14. Test circuit for switching times PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 9 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 04-08-03 Fig 15. Package outline SOT89 (SC-62/TO-243 SC-62/TO-243) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 1000 PBSS302PX PBSS302PX [1] SOT89 8 mm pitch, 12 mm tape and reel -115 -135 For further information and the availability of packing methods, see Section 15. PBSS302PX PBSS302PX_1 Product data sheet 4000 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 10 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 0.50 1.20 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 Dimensions in mm Fig 16. Reflow soldering footprint SOT89 (SC-62 SC-62) 6.60 2.40 solder lands solder resist 7.60 0.50 3 occupied area 3.50 2 1 1.20 3.00 transport direction during soldering 1.50 0.70 5.30 MSA423 MSA423 Dimensions in mm Not recommended for wave soldering Fig 17. Wave soldering footprint SOT89 (SC-62 SC-62) PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 11 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 12. Mounting 32 mm 30 mm 32 mm 40 mm 2.5 mm 20 mm 40 mm 1 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 3.96 mm 5 mm 3.96 mm 1.6 mm 001aaa234 PCB thickness: 1.6 mm 001aaa235 PCB thickness = 1.6 mm FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al2O3, standard footprint SOT89 (SC-62 SC-62) PBSS302PX PBSS302PX_1 Product data sheet Fig 19. FR4 PCB, mounting pad for collector 6 cm2 SOT89 (SC-62 SC-62) © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 12 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS302PX PBSS302PX_1 20060823 Product data sheet - - PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 13 of 15 PBSS302PX PBSS302PX Philips Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 14.2 Definitions Draft - The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet - A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General - Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes - Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use - Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications - Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values - Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale - Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license - Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PBSS302PX PBSS302PX_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 - 23 August 2006 14 of 15 Philips Semiconductors PBSS302PX PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 23 August 2006 Document identifier: PBSS302PX PBSS302PX_1