PA828TD 2SC5436 PA828TD-A PA828TD-T3 PA828TD-T3-A PU10402EJ03V0DS

NPN SILICON RF TWIN TRANSISTOR PA828TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA828TD PA828TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES · Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz · Built-in 2 transistors (2 × 2SC5436 2SC5436) · 6-pin lead-less minimold (M16, 1208 PKG) BUILT-IN TRANSISTORS Q1, Q2 3-pin thin-type ultra super minimold part No. 2SC5436 2SC5436 ORDERING INFORMATION Part Number PA828TD PA828TD Order Number Package PA828TD-A PA828TD-A PA828TD-T3 PA828TD-T3 6-pin lead-less minimold PA828TD-T3-A PA828TD-T3-A (M16, 1208 PKG) (Pb-Free) Quantity Supplying Form 50 pcs (Non reel) · 8 mm wide embossed taping 10 kpcs/reel · Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10402EJ03V0DS PU10402EJ03V0DS (3rd edition) Date Published February 2008 NS Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2003, 2008 PA828TD PA828TD ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5.0 V Collector to Emitter Voltage VCEO 3.0 V Emitter to Base Voltage VEBO 2 V IC 30 mA 90 in 1 element mW Collector Current Total Power Dissipation Ptot Note 180 in 2 elements Junction Temperature Tj 150 °C Storage Temperature Tstg -65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characterstics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA - - 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 100 nA VCE = 2 V, IC = 20 mA 70 - 140 - VCE = 1 V, IC = 10 mA, f = 2 GHz 7.0 9.0 - GHz VCE = 2 V, IC = 20 mA, f = 2 GHz 9.0 11.0 - GHz DC Current Gain hFE Note 1 RF Characterstics Gain Bandwidth Product (1) fT Gain Bandwidth Product (2) fT Insertion Power Gain (1) S21e VCE = 1 V, IC = 10 mA, f = 2 GHz 6.0 7.5 - dB Insertion Power Gain (2) S21e VCE = 2 V, IC = 20 mA, f = 2 GHz 7.0 8.5 - dB Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = Zopt - 1.3 2.0 dB Noise Figure (2) NF VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = Zopt - 1.3 2.0 dB VCB = 2 V, IE = 0 mA, f = 1 MHz - 0.4 0.8 pF 0.85 - - - 2 2 Reverse Transfer Capacitance hFE Ratio Cre Note 2 hFE1/hFE2 VCE = 2 V, IC = 20 mA, hFE1 : Smaller value of Q1 and Q2, hFE2 : Larger value of Q1 and Q2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded. hFE CLASSIFICATION Rank Marking kL hFE Value 2 FB 70 to 140 Data Sheet PU10402EJ03V0DS PU10402EJ03V0DS PA828TD PA828TD TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 300 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 250 200 2 Elements in total 180 150 100 Per Element 90 50 0 25 50 75 100 125 150 0.5 f = 1 MHz 0.4 0.3 0.2 0.1 0 1 2 3 4 Ambient Temperature TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 10 Collector Current IC (mA) Collector Current IC (mA) 100 1 0.1 0.01 0.001 0.0001 0.4 5 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 35 Collector Current IC (mA) 30 500 A 450 A 400 A 300 A 350 A 250 A 25 200 A 20 150 A 15 100 A 10 IB = 50 A 5 0 1 2 3 4 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10402EJ03V0DS PU10402EJ03V0DS 3 PA828TD PA828TD DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 100 10 0.1 1 10 100 10 0.1 100 1 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 16 VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 16 Collector Current IC (mA) 12 8 4 0 1 10 VCE = 2 V f = 2 GHz 12 8 4 0 1 100 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 1 V IC = 10 mA 30 25 MSG MAG 20 15 |S21e|2 10 5 0 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) Frequency f (GHz) VCE = 2 V IC = 10 mA 30 25 MSG MAG 20 15 |S21e|2 10 5 0 0.1 1 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 4 35 Data Sheet PU10402EJ03V0DS PU10402EJ03V0DS 10 PA828TD PA828TD 20 MSG 16 MAG |S21e|2 12 8 4 VCE = 1 V f = 1 GHz 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG |S21e|2 16 12 8 4 VCE = 2 V f = 1 GHz 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 16 MSG MAG 12 |S21e|2 8 4 VCE = 1 V f = 2 GHz 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 20 16 MSG MAG 12 |S21e|2 8 4 VCE = 2 V f = 2 GHz 0 1 10 100 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 10 8 MAG 6 4 |S21e|2 2 VCE = 1 V f = 4 GHz 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) Collector Current IC (mA) 10 8 MAG 6 |S21e|2 4 2 VCE = 2 V f = 4 GHz 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10402EJ03V0DS PU10402EJ03V0DS 5 PA828TD PA828TD NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 2 8 NF 4 1 Noise Figure NF (dB) 12 Associated Gain Ga (dB) 4 16 3 12 2 8 NF 4 1 0 0 100 10 Ga 1 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 5 20 20 16 Ga 3 12 2 8 NF 4 1 0 1 16 Ga 3 12 2 8 NF 4 1 0 0 100 10 4 1 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 20 5 20 4 16 3 Ga 2 12 8 NF 4 1 1 10 0 100 Noise Figure NF (dB) VCE = 2 V f = 2 GHz Associated Gain Ga (dB) Noise Figure NF (dB) VCE = 1 V f = 2 GHz 0 4 16 Ga 3 2 12 8 NF 4 1 0 1 Collector Current IC (mA) 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 Associated Gain Ga (dB) 4 Noise Figure NF (dB) VCE = 2 V f = 1.5 GHz Associated Gain Ga (dB) Noise Figure NF (dB) VCE = 1 V f = 1.5 GHz Data Sheet PU10402EJ03V0DS PU10402EJ03V0DS 0 100 Associated Gain Ga (dB) Noise Figure NF (dB) 16 3 1 20 VCE = 2 V f = 1 GHz Ga 4 0 5 20 VCE = 1 V f = 1 GHz Associated Gain Ga (dB) 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT PA828TD PA828TD PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.0±0.05 3 0.15±0.05 C1 1 Q1 6 B1 5 6 (Top View) E1 4 2 0.4 0.4 0.8 kL C2 2 3 5 Q2 4 E2 B2 0.125+0.1 0.05 PIN CONNECTIONS 0.5±0.05 1.2+0.07 0.05 1 0.8+0.07 0.05 Data Sheet PU10402EJ03V0DS PU10402EJ03V0DS 1. 2. 3. 4. 5. 6. Collector (Q1) Emitter (Q1) Collector (Q2) Base (Q2) Emitter (Q2) Base (Q1) 7 PA828TD PA828TD · The information in this document is current as of February, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. · No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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