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NX6350GP33-AZ
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Renesas Electronics Corporation
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270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application |
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NX6351GP33-AZ
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Renesas Electronics Corporation
|
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application |
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NX6352GP33-AZ
|
|
Renesas Electronics Corporation
|
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application |
|
|
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NX6350EP33-AZ
|
|
Renesas Electronics Corporation
|
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application |
|
|
|
NX6353EP33-AZ
|
|
Renesas Electronics Corporation
|
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8Gbps CPRI, 10G Ethernet Application |
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