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P-TO220-3-31

Catalog Datasheet MFG & Type PDF Document Tags

11N60C3

Abstract: transistor 11n60c3 High peak current capability · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.38 11 V A P-TO220-3-31 P-TO220-3-1 · P-TO-220-3-31: Fully , Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 11N60C3 P-TO220-3-31 Q67040-S4408 Symbol ID 11 7 ID puls , cut. P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol min A B C D E F G H K L M N P T
Infineon Technologies
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transistor 11n60c3 SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Q67040-S4395 Q67040-S4396

15N60C3

Abstract: P-TO220-3-31 gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · Extreme dv/dt rated · Ultra low effective capacitances 1 · Improved transconductance 2 3 P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code , -3-1 Q67040-S4601 15N60C3 SPA15N60C3 P-TO220-3-31 Q67040-S4603 15N60C3 Maximum Ratings Parameter , 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK
Infineon Technologies
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SPP15N60C3 SPI15N60C3 transistor 15N60c3 5304 marking code 15N60 73 5304 Q67040-S4600

SMD Transistor g20

Abstract: 03N60C3 current capability · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO220-3-31 P-TO263-3-2 650 1.4 3.2 V A P-TO220-3-1 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 , Q67040-S4401 Q67040-S4391 Marking 03N60C3 03N60C3 03N60C3 P-TO220-3-31 - Maximum Ratings Parameter , 2004-09-07 SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol
Infineon Technologies
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SMD Transistor g20 2535-r

16N50C3

Abstract: Q67040-S4581 Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP16N50C3 , -3-1 Q67040-S4582 16N50C3 SPA16N50C3 P-TO220-3-31 Q67040-S4581 16N50C3 Maximum Ratings Parameter , cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220
Infineon Technologies
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SPI16N50C3 16N50 AN-TO220-3-31-01 Q67040-S4583

03N60C3

Abstract: SMD Transistor g20 Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 · , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-2 Q67040-S4391 03N60C3 SPA03N60C3 P-TO220-3-31 - 03N60C3 Maximum Ratings Symbol Parameter , SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO-220-3-31 (FullPAK) Please refer to mounting instructions
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04N60C3

Abstract: smd transistor G18 gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 · Extreme dv/dt rated · High peak current capability 1 · Improved transconductance 2 3 P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code , -3-2 Q67040-S4407 04N60C3 SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3 Maximum Ratings Symbol , -PAK) Rev.2.1 Page 12 2004-09-07 SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO-220-3-31 (FullPAK
Infineon Technologies
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smd transistor G18 04N60C3 equivalent 4V-20V 04N60C Q67040-S4366

02N80C3

Abstract: Q67040-S4432 gate charge · Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 · Extreme dv/dt rated · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) 1 2 3 P-TO220-3-31 Type Package Ordering Code Marking SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 SPA02N80C3 P-TO220-3-31 , =7.25, y=12.3 P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note
Infineon Technologies
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02N8 Q67040S4634

12N50C3

Abstract: TRANSISTOR 12N50C3 · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263 , transconductance 1 2 3 1 23 P-TO220-3-31 P-TO220-3-1 · P-TO-220-3-31: Fully isolated , P-TO262 Q67040-S4578 12N50C3 SPA12N50C3 P-TO220-3-31 Q67040-S4577 12N50C3 Maximum , 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to
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SPP12N50C3 SPB12N50C3 SPI12N50C3 Q67040-S4641 TRANSISTOR 12N50C3 12n50c TRANSISTOR SMD MARKING CODE 7A Q67040-S4579

03N60C3

Abstract: P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 · P-TO-220-3-31: Fully isolated , -3-2 Ordering Code Q67040-S4401 Q67040-S4391 Marking 03N60C3 03N60C3 03N60C3 P-TO220-3-31 - Maximum , 2003-07-01 Final data P-TO-220-3-31 (FullPAK) SPP03N60C3, SPB03N60C3 SPA03N60C3 Please refer to
Infineon Technologies
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07n60c3

Abstract: 07n60c voltage technology · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262 , transconductance 1 2 3 P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute , SPA07N60C3 P-TO220-3-31 Q67040-S4409 07N60C3 Maximum Ratings Symbol Parameter Value SPP_B , Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31
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SPP07N60C3 SPB07N60C3 SPI07N60C3 07n60c smd transistor marking G12 Q67040-S4422 Q67040-S4394 Q67040-S4424

08N80C3

Abstract: equivalent 08N80C3 gate charge · Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 · Extreme dv/dt rated · Ultra low effective capacitances 1 · Improved transconductance 2 3 P-TO220-3-31 · P-TO-220-3-31 , P-TO220-3-1 Q67040_S4436 08N80C3 SPA08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 Maximum , C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-220-3-31
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SPP08N80C3 equivalent 08N80C3 08n80 transistor SPP08N80C3 08n80c

07N60C3

Abstract: High peak current capability · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.6 7.3 V A P-TO220-3-31 P-TO220-3-1 2 1 P-TO220-3-1 23 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPB07N60C3 , Code Q67040-S4400 Q67040-S4394 Q67040-S4424 Marking 07N60C3 07N60C3 07N60C3 07N60C3 P-TO220-3-31 , plated, except area of cut. P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol min A B C
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17n80c3

Abstract: 17n80 capacitances · Improved transconductance · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type , Marking 17N80C3 17N80C3 17N80C3 P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO220-3-31 Q67040-S4441 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C , P-TO-220-3-31 (FullPAK) SPP17N80C3, SPB17N80C3 SPA17N80C3 10.5 ±0.005 6.1 ±0.002 1.5 ±0.001 4.7
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17n80 17N80C UJ14 Q67040-S4353 Q67040-S4354

08N50C3

Abstract: P-TO-220-3-31 Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP08N50C3 , -3-1 Q67040-S4568 08N50C3 SPA08N50C3 P-TO220-3-31 Q67040-S4576 08N50C3 Maximum Ratings Parameter , plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions
Infineon Technologies
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SPI08N50C3 08N50 Q67040-S4567

11n80c3

Abstract: SPA11N80C3 gate charge · Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 · Extreme dv/dt rated · Ultra low effective capacitances 1 · Improved transconductance 2 3 P-TO220-3-31 · P-TO-220-3-31 , P-TO220-3-1 Q67040-S4438 11N80C3 SPA11N80C3 P-TO220-3-31 Q67040-S4439 11N80C3 Maximum , plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-220-3-31 (FullPAK) Please refer
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SPP11N80C3 80011a 11n80c

04n60c3

Abstract: Q67040-S4366 P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 · P-TO-220-3-31: Fully isolated , -3-2 Ordering Code Q67040-S4366 Q67040-S4407 Marking 04N60C3 04N60C3 04N60C3 P-TO220-3-31 Q67040-S4413 , ±0.48 0.05 Page 12 2003-07-01 Final data P-TO-220-3-31 (FullPAK) SPP04N60C3, SPB04N60C3
Infineon Technologies
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20N60C3

Abstract: Q67040-S4550 avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance · P-TO-220-3-31 , Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.19 20.7 V A P-TO220-3-31 P-TO220-3-1 Package , 20N60C3 20N60C3 20N60C3 20N60C3 P-TO220-3-31 Q67040-S4410 Symbol ID 20.7 13.1 ID puls EAS EAR IAR , . P-TO-220-3-31 (FullPAK) P-TO220-3-31 dimensions symbol min A B C D E F G H K L M N P
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Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING SPP20N60C3 SPB20N60C3 SPI20N60C3 SPA20N60C3 Q67040-S4398 Q67040-S4397

08N80C3

Abstract: equivalent 08N80C3 SPP08N80C3, SPI08N80C3 SPA08N80C3 Final data Cool MOSTM Power Transistor VDS · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 0.65 ID · New revolutionary , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , Q67040-S4632 08N80C3 SPA08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 Maximum Ratings Symbol , metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting
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Q67040-S4436

04n60c3

Abstract: 04N60C3 equivalent · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220 , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-2 Q67040-S4407 04N60C3 SPA04N60C3 P-TO220-3-31 Q67040-S4413 04N60C3 Maximum Ratings Symbol , Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO-220-3-31 (FullPAK) Please refer to mounting
Infineon Technologies
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04n60 transistor C 331

11N80C3

Abstract: 11n80c Final data SPP11N80C3 SPA11N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOSTM Power Transistor , Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 0.45 11 V A P-TO220-3-1 1 2 3 , 11N80C3 P-TO220-3-31 Q67040-S4439 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC , surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-220-3-31 (FullPAK
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17n80c3

Abstract: 17n80 avalanche rated · Extreme dv/dt rated P-TO220-3-31 Product Summary VDS RDS(on) ID P-TO263-3-2 800 0.29 17 V A P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP17N80C3 SPB17N80C3 SPA17N80C3 , 17N80C3 P-TO220-3-31 Q67040-S4441 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC , 2002-07-25 Preliminary data P-TO-220-3-31 (FullPAK) SPP17N80C3, SPB17N80C3 SPA17N80C3 10.5 ±0.005
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15N60C3

Abstract: TRANSISTOR 15n60c3 Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 · , P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-1 Q67040-S4601 15N60C3 SPA15N60C3 P-TO220-3-31 Q67040-S4603 15N60C3 Maximum Ratings Parameter , surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31
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04n50c3

Abstract: SMD TRANSISTOR MARKING 6C · Ultra low gate charge · Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220 , 3 P-TO220-3-31 · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package , -3-2 Q67040-S4573 04N50C3 SPA04N50C3 P-TO220-3-31 Q67040-S4572 04N50C3 Maximum Ratings Symbol , Final data SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO-220-3-31 (FullPAK) Please refer to mounting
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SMD TRANSISTOR MARKING 6C 04N50 Q67040-S4575

04N80C3

Abstract: SPA04N80C3 Final data SPP04N80C3 SPA04N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOSTM Power Transistor , Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 1.3 4 V A P-TO220-3-1 1 2 3 , 04N80C3 P-TO220-3-31 Q67040-S4434 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC , =12.3 P-TO-220-3-31 (FullPAK) 10.5 ±0.005 6.1 ±0.002 1.5 ±0.001 4.7 ±0.005 2.7 ±0.005 7° 15.99 ±0.005
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Q67040-S4433

06n80c3

Abstract: SPA06N80C3 Final data SPP06N80C3 SPA06N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOSTM Power Transistor , Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 0.9 6 V A P-TO220-3-1 1 2 3 , 06N80C3 P-TO220-3-31 Q67040-S4435 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC , plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-220-3-31 (FullPAK) 10.5 ±0.005
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Q67040-S4351
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