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Part : P-CHANNEL MOSFET, 60-V Supplier : SILICONYX Manufacturer : New Advantage Stock : 80 Best Price : - Price Each : -
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P-Channel

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 5-65 5-70 5-75 5-80 5-85 P-CHANNEL POWER MOSFETs P-CHANNEL POWER MOSFET DATA SHEETS 2N6804 2N6849 , Rated P-Channel Power M OSFET. Avalanche Energy Rated P-Channel Power MOSFET. Avalanche Energy Rated P-Channel Power MOSFET. P-Channel Enhancement-Mode Power MOS Field-Effect Transistor. P-Channel Enhancement-Mode Power MOS Field-Effect Transistor. P-Channel Enhancement-Mode Power MOS Field-Effect -
OCR Scan
2N6897 2N6898 IRF9132 IRF9150 IRF9511 IRF9632 p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors irf9640 mosfet 2N6851 2N6895 2N6896 IRF9130
Abstract: · Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS , voltage (DC) N-channel P-channel VsD source-drain diode forward voltage N-channel P-channel V gso VGSth , P-channel drain current (DC) N-channel P-channel drain-source on-state resistance N-channel P-channel total , P-channel gate-source voltage (DC) drain current (DC) N-channel P-channel peak drain current N-channel P-channel total power dissipation Ts = 80 °C; note 2 Tam b = Tam b = Tam b = - 30 -3 0 ±20 V V V A A -
OCR Scan
PHC21025 HC21025 1997J MBE14S
Abstract: POWER MOSFETs 4 PAGE 4-3 4-9 4-15 P-CHANNEL POWER MOSFETs P-CHANNEL POWER MOSFET DATA , 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 3 6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs. . . . 4-21 15A -
OCR Scan
100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated 451 MOSFET mosfet 30a 200v IRFU9110 IRFR9110 IRFU9120 IRFR9120 IRFR9220 IRFU9220
Abstract: 8 DESCRIPTION One N-channel and one P-channel enhancem ent mode MOS transistor in an 8-pin SOT96 , SYMBOL Per channel V ds drain-source voltage (DC) N-channel P-channel VsD source-drain diode forward voltage N-channel P-channel V qs O VGSth gate-source voltage (DC) gate-source threshold voltage N-channel P-channel Id drain current (DC) N-channel P-channel R d Soh drain-source on-state resistance N-channel P-channel Plot 1998 Feb 18 total power dissipation VGS = 10 V; lD = 4 A V gs = -1 0 V; lD = -2 .8 A T s = 80 -
OCR Scan
PHC20306
Abstract: , N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F This specification is , P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects(SEE), power , ID1 (3) TC = +25°C VDS = VDG R JA VGS N-channel P-channel N-channel P-channel °C/W 90 , ±20 ±20 IDM (3) IS TJ and TSTG N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel °C 2N7518 1.6 -0.85 1.0 -0.55 1.6 -0.85 6.4 -3.4 -55 to 2N7518U -
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MO-036AB IRHQ567110 2N6989U F 739 DC MIL-PRF-19500/739 MIL-PRF-19500 MS-004CC IRHG567110
Abstract: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of , pair-a p-channel and an n-channel device that match in all parameters-is impossible. The principal application of the p-channel, enhancementmode MOSPOWER FET is in switching power (or voltage) to grounded (ground return) loads. Yet, despite its shortcomings, the p-channel MOSFET performs a vital Temic Semiconductors
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VP2020L FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET Power MOSFET p-Channel n-channel dual TP0610 2N7000 9939DY 9942DY 9958DY VP0300L
Abstract: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher , complementary pair-a p-channel and an n-channel device that match in all parameters-is impossible. The principal application of the p-channel, enhancementmode MOSPOWER FET is in switching power (or voltage) to , gate-source voltage, whereas the p-channel MOSFET requires a negative gate-source potential. Yet, despite Vishay Siliconix
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TP0101T 2n7000+complement mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET Si9928DY Si9939DY Si9942DY 9928DY VN0300L TP0610L VN2010L TN0200T
Abstract: National 0 M a y 1996 Semiconductor' NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power , 3.0A, 20V, RD N S(O |=0.125Q @ VG S=10V P-Channel -2.8A, -25V, RD N SIO )=0.16Q @ VGS=-10V. â , widely used surface mount package. â  Dual (N & P-Channel) MOSFET in surface mount package. TA , Unite ±20 Ta = 25°C P-Channel ±10 2 (N 1 a ote > {N 1 l ote b 1 (N 1 ) ote -
OCR Scan
Abstract: i n t e r cil m P-Channel Standard Gate I _ Power MOSFETs | P ow er M O SFE T P ro d u cts PAGE P-Channel Test Circuits and W avefo rm s. P-Channel Standard Gate Power M O SFETs Data Sheets 5 -3 RFD15P05, RFD15P05SM, RFP15P05 RFD15P06 , , RFP12P10 RFP8P10 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs. 5-7 15A, 60V, 0.150 Ohm, P-Channel Power M OSFETs -
OCR Scan
RFD8P05SM 15a 50v p-channel mosfet 30V 60A power p MOSFET mosfet p-channel 8a RFD15P06SM RFP15P06 RFD8P05 RFP8P05 RFD8P06E
Abstract: Logic-Level PowerTrench MOSFET FDG326P P-Channel 1.8V Specified PowerTrench MOSFET Power Management , /Notebook CPU PWM Controllers FDN304P P-Channel 1.8V Specified PowerTrench MOSFET FM3565 Power , FQB60N03L 30V Logic N-Channel MOSFET System Supervisory FDG326P P-Channel 1.8V Specified PowerTrench MOSFET FAN7000 300mW Audio Amplifier (stereo) FDG328P P-Channel 2.5V Specified PowerTrench MOSFET FAN7021 1.1W Audio Amplifier (mono) FDN304P P-Channel 1.8V Specified PowerTrench Fairchild Semiconductor
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500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v S-17148 247TM
Abstract: Power management · Synchronized rectification. DESCRIPTION One N-channel and one P-channel , ! P-channel VsD source-drain diode forward voltage N-channel P-channel V gs VGSth gate-source voltage (DC) gate-source threshold voltage N-channel P-channel Id drain current (DC) N-channel P-channel V ds = Vgs ; Id = , P-channel o o II - a il w Plot 1997 Oct 22 total power dissipation 1280 Philips , P-channel gate-source voltage (DC) drain current (DC) N-channel P-channel peak drain current N-channel -
OCR Scan
hc20512 PHC20512
Abstract: IRF7104 p-channel IRF7309 IRF7303 n-channel + IRF7306 p-channel IRF7307 IRF7301 n-channel + IRF7304 p-channel IRF7105 / IRF7106 For complimentary,refer to respective n-channel or p-channel dual part numbers: 20V P-channel 30V P-channel 20V N-channel Type Package Failure Point ESD Average 2 IRLML5103 IRLML6302 30V P-channel IRLML2402 IRLML2803 IRLMS6702 IRLMS5703 , IRF7603 Part Number 20V P-channel 20V N-channel 30V N-channel 20V P-channel 30V International Rectifier
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MIL-STD-750C IRF7413 IRLMS1503 824 mosfet n-channel mosfet vgs 3v P-Channel MOSFET 600v IRF7205 irf7311 97-2J IRF7404 IRF7406 IRF7204/IRF7205 IRF7416
Abstract: PAIRCHILD MICONDUCTOR ! February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field effect , . Features â  N-Channel 3.7A, 30V, Rn =0.08ii@ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13£2 @ VGS , widely used surface mount package. Dual (N S P-Channel) MOSFET in surface mount package. SO-8 Absolute Maximum Ratings T.= 25°C unless otherwise noted Symbol Parameter N-Channel P-Channel Units VDSS -
OCR Scan
Transistor Mosfet N-Ch 30V n channel mosfet
Abstract: SLA5006 SLA5007 N-Channel P-Channel SLA5008 N-Channel P-Channel SLA5009 N-Channel P-Channel SLA5010 SLA5011 SLA5012 SLA5013 SLA5015 SLA5017 N-Channel P-Channel N-Channel P-Channel N-Channel P-Channel P-Channel N-Channel P-Channel SLA5018 SLA5021 SLA5024 SLA5029 SLA5031 SLA5037 SLA5038 SLA5040 SLA5041 SLA5042 SLA5044 SLA5047 SMA5101 SMA5102 SMA5103 N-Channel P-Channel SMA5104 SMA5105 SMA5106 SMA5112 , 250 60 N-Channel P-Channel 60 ­60 60 ­60 100 5 4 5 4 5 4 7 5 4 3 20 28 2 ­ 2 ­ 32 16 55 ­ ­ ­ ­ ­ ­ Allegro MicroSystems
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SLA5001 SLA5002 SLA5003 SLA5004 SLA5005 STA501A
Abstract: drain 1 8 d1 drain 1 DESCRIPTION One N-channel and one P-channel enhancement mode MOS , . UNIT Per channel VDS drain-source voltage (DC) N-channel VSD - 30 V P-channel , P-channel IS = -1.25 A - -1.6 V open drain - ±20 V VGSO gate-source voltage , 3.5 A P-channel RDSon 1 VDS = VGS ; ID = -1 mA N-channel ID VDS = VGS; ID = 1 mA P-channel - -2.3 A drain current (DC) drain-source on-state resistance N-channel Ptot -
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MAM118 076E03S MS-012AA
Abstract: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs , higher inter-electrode capacitances. Consequently, a truly complementary pair-a p-channel and an n-channel device that match in all parameters-is impossible. Yet, despite its shortcomings, the p-channel , high-side switch, a p-channel MOSFET in a totem-pole arrangement with an n-channel MOSFET will simulate a high-current, high-power CMOS (complementary MOS) arrangement. Although the p-channel MOSFET cannot Temic Semiconductors
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VN0300L equivalent 2N7000 MOSFET Siliconix "fet" TO226AA siliconix an804 SILICONIX 2N7002 TP0610T 2N7002
Abstract: Ià National Semiconductor'" March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N and P-channel enhancement mode power field effect , power supply applications. Features â  N-Channel 0.51 A, 50V, RDS(0N) = 2Q @ VGS=10V â'¢ P-Channel , . SuperSOTâ"¢-6 Symbol Parameter N-Channel P-Channel Units Voss Drain-Source Voltage 50 -50 V ^GSS , CL Input Capacitance N-Channel VDS = 25V, VGS = 0V, f =1.0 MHz P-Channel Vds = -25V, Vgs = 0 V, f -
OCR Scan
VX25 L5D113D S0113G Q03T7T3
Abstract: e* National Semiconductor" May 1996 NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect , resistance to transients are needed. Features â  N-Channel 3.0A, 20V, RDSION)=0.125à @ VGS=10V P-Channel , power and current handling capability in a widely used surface mount package. â  Dual (N & P-Channel , Symbol Parameter N-Channel P-Channel Units Voss Drain-Source Voltage 20 -20 V V(3SS Gate-Source Voltage -
OCR Scan
p channel mosfet SD1130
Abstract: N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel N-Channel N-Channel N-Channel N-Channel -
OCR Scan
BUZ50ASM BUZ50B-220SM BUZ900D BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM
Abstract: 0 December 1996 N ational Semiconductor NDH8320C Dual N & P-Channel Enhancement Mode ,   N-Channel 3 A, 20 V, RD (O )=0.06 a @ VG =4.5 V S N S RD (O )=0.075 a @ V gs= 2.7 V S N P-Channel -2 A , surface m ount package. Dual (N & P-Channel) MOSFET in surface m ount package. D2 D1 D2 D1 S2 , Pulsed -20 8 (N o te D Units 20 Drain Current -Continuous Id P-Channel -1 0 , Input Capacitance Output Capacitance Reverse Transfer Capacitance P-Channel VD = A 0 V, VG = 0 -
OCR Scan
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