500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161IS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

P-Channel MOSFET 800v

Catalog Datasheet MFG & Type PDF Document Tags

IRU1239SC

Abstract: iru1239 package 3 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 10 45V 110.000A D-61 45V 110A Schottky Common Cathode , Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a , 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package FAX , : 0755-8380 8450 3 800V 3 Phase Bridge in a INT-A-Pak package 100V 110A Schottky Common Cathode Diode in a
Shenzhen Shouhe Technology
Original

15A POWER TRANSISTOR FOR SMPS

Abstract: list of n channel power mosfet output. It is ideally suited for driving a power MOSFET. Features and Benefits · Power savings mode , Complex Module Compact & Complex Module 800V N-Channel Advanced QFETTM C-Series 900V N-Channel Advanced , C-Series 800V N-Channel Advanced QFET C-Series 800V N-Channel Advanced QFET C-Series 200V N-Channel , N-Channel Advanced QFET C-Series 800V N-Channel Advanced QFET C-Series 800V N-Channel Advanced QFET , Transistor Dual P-Channel Logic Level PowerTrench MOSFET ISL9N315AD3ST KSC2690 MJE802 SI4532DY
Fairchild Semiconductor
Original
FAN7601 15A POWER TRANSISTOR FOR SMPS list of n channel power mosfet FQPF*10n20c detailed vfd circuit diagram for motor FAN7601 application data FAN7031 FAN7023 FAN7005 FIN7216-01 FAN7556

P-Channel MOSFET 800v

Abstract: 800v irf PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 10V, ID = 2.5A V VDS = VGS, ID = 250µA S VDS = 100V, ID = 2.5A µA VDS = 800V, VGS = 0V VDS = , 25°C, IS = 4.1A, VGS = 0V TJ = 25°C, IF = 4.1A di/dt = 100A/µs à MOSFET symbol A ­­­ ­­­
International Rectifier
Original
IRFBE30S IRFBE30L P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET IRFBE30SP IRFBE30LP IRFBE30S/LP EIA-418

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode MOSFET FQA7N80 N-Channel 7A/800V Power MOSFET FDS6912 Dual N-Channel Logic-Level PWM , Current Sensing Method 20A­30A/40V Schottky Rectifiers 100%­400% Current Amplification 6A/800V , Memory Power Controller (VDDQ, VTT and VREF) FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDB6035AL N-Channel Logic-Level PowerTrench MOSFET FDC6331L Integrated Load Switch FDD6690A N-Channel Logic-Level PowerTrench MOSFET FDD6630A 30V N-Channel PowerTrench MOSFET ML6553 1A Bus
Fairchild Semiconductor
Original
500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps SB550 transistor S-17148 247TM

600V igbt dc to dc buck converter

Abstract: diode 8a 600v MOSFETs FDZ299P - P-Channel MOSFET Features and Benefits Applications FXL34 - Voltage Translator , save PCB board space without sacrificing power dissipation capability Low-voltage P-Channel MOSFET , applications P-Channel MOSFET in 1.5 x 1.5mm BGA package www.fairchildsemi.com/whats_new/lmv3xx_nph.html , performance with size. This PChannel MOSFET's high-performance PowerTrench technology is housed in an , channel · The SSOT-6 FLMP provides a much lower thermal impedance path from the PCB to the MOSFET
Fairchild Semiconductor
Original
600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FS6X1220RT FSAT66 FDC796N/FDC3616N QTLP673C-R/E/O/Y/IB/IC/IG QTLP614C-RGB QTLP650D-RGB

IXAN0062

Abstract: 1000V P-channel MOSFET IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation's power MOSFET products and their typical application information. Power MOSFETs are widely used , vertical double-diffused MOSFET using the Planar-gate process and the "UMOSFET" or the "Trench MOSFET , Power MOSFET The Planar-gate MOSFET is defined as "DMOSFET" or double diffused power MOSFET in which , bias to create a channel at the surface of the P-base region. Trench-gate Power MOSFET The
IXYS
Original
1000V P-channel MOSFET DMOSFET power mosfets mosfet 1000v Silicon MOSFET 1000V

TRIACS EQUIVALENT LIST

Abstract: 440v to 12v smps power supply 18 FDS3672/FDS3682/FDS3692/ FDS3992/FDS2572/FDS2582 60V trench MOSFET devices provide , functions · Injection systems · Overcurrent protection using MOSFET sensing · Distributed power , topologies 8 9 10 FKPF12N60/FKPF12N80 TinyLogic Ultra Low Power FOD2741A/B/C 600V/800V , /fod2741_nph.html www.fairchildsemi.com/tinylogic TinyLogic ULP Noise free low voltage switching 600V/800V , FJAF4210 FJAF4310 FKPF12N60 FKPF12N80 P-Channel 1.8V Specified FLMP PowerTrench® MOSFET P-Channel
Fairchild Semiconductor
Original
TRIACS EQUIVALENT LIST 440v to 12v smps power supply 440v ac voltage regulator REG IC 48V IN 12V 10A OUT 440v to 12v smps power supply 50A dimmer diagrams IGBT FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 FKPF12N60/80

1N4007 MINI MELF

Abstract: . 3 BACKLIGHT INVERTER, MOSFET Driver , Backlight Inverter segment includes lighting igniters, protection devices, and MOSFET drivers. For lighting , , MOSFET Driver MOSFETs Product Name Status Description Features Package 2N7002K Single n-channel 60-V MOSFET Single N-Ch; 60V; MOSFET rDS(on) at 4.5V=4Ohms; ID(max) = 300mAmp; SI4425BDY P-channel 30-V single MOSFET VDS = 30 V; rDS(on)@4.5 V = 0.019ohms ID(max) = 11.4 A SMD SO
Vishay Intertechnology
Original
1N4007 MINI MELF 1N4007 1N5408 DO-201 BYV26EGP DO-204AC DO-15

P-Channel MOSFET 800v

Abstract: PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0â"¦ G ID = 4.1A S Description Third Generation HEXFETs from , = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , di/dt = 100A/µs Ù MOSFET symbol A â'"â'"â'" â'"â'"â'" â'"â'"â'" â'"â'"â'" 480
International Rectifier
Original

P-Channel MOSFET 800v

Abstract: IRFBE30L PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS(on) = 3.0 G ID = 4.1A S Description Third Generation HEXFETs from International , = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 4.1A VDS = , MOSFET symbol A ­­­ ­­­ ­­­ ­­­ 480 1.8 V ns nC D G S f f Intrinsic
International Rectifier
Original
IRL3103L

IRF540 n-channel MOSFET

Abstract: GES 9515 ^ ^ _ ^ ^ CONCLUSION The use of power MOSFET dice for hybrid assemblies can result in significant , OOlOSbfl 0 â  T-3 , pd-9.465 TABLE 2: ELECTRICAL PROBE SPECIFICATIONS FOR P-CHANNEL HEXFET POWER MOSFET DIE HEX Part , HEXSense POWER MOSFET DIE IOR HEX Part VDS RDS(on) Nominal Figure Recommended Closest Bulletin size , IRC840 PD-9.501 TABLE 4: ELECTRICAL PROBE SPECIFICATIONS FOR P-CHANNEL LOGIC LEVEL MOSFET DIE HEX Part
-
OCR Scan
IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 p-channel MOSFET QD102 55M52
Abstract: Specifications for N-Channel Rad Hard Power MOSFET Die Recommended Bond Wire Size Gate Source (in/mm) (In , ) GATE 0.68 " (0.027) 3.56 (0.140) 2.49 (0.098) HEX-3: 60V, N-CHANNEL HEX-2: 800V, 900V & , ) * " HEX-3: 600V, N-CHANNEL HEX-3: 800V, 900V & 1000V, N-CHANNEL SEE NOTES FOR TOLERANCES AND -
OCR Scan
T-39- IRHN7150 IRHN8150 IRHN7250 IRHN8250 IRHN7450

IRF540 p-channel MOSFET

Abstract: IRFBE40 MOSFET Die Hex Size Z Part Number (6) IRFC1ZQ IRFC014 IRFC110 IRFC210 IRFC214 IRFC31Q IRFC024 IRFC120 , (0.140) 2.49 (0.098) HEX-3: 60V, N-CHANNEL HEX-2: 800V, 900V & 1000V, N-CHANNEL LOGIC LEVEL: HEX , > (0.170) * 72 (0.026) 2.95 (0.116) " HEX-3: 600V, N-CHANNEL HEX-3: 800V, 900V&1000V, N-CHANNEL
-
OCR Scan
IRFBE40 IRFBG40 irf*234 n irf540 800v IRFBF40 MOSFET IRF840 SS455

IRFC9130

Abstract: irfc130 « Figure 11. HEX-2. 800V, 900V, & 1000V, N-Channel -â'"WH â W Figure 12. HEX-3: 60V, N- and , 18. HEX-3: 800V, 900V, & 1000V, N-Channel All dimensions shown in Inches/mm Die dimensions are from , Figure 2«. HEX-4.5: 500V, N-Channel Figure 2*. HEX-4: 800V, 900V, & 1000V, N-Channel Figure 27. HEX , , N-Channel Figure 32. HEX-5: 800V. 900V, & 1000V. N-Channel -mâ'" â'"-I Figure 33. HEX-6: 200V, 400V & , -966. "HEXFET III â'" A new Generation of Power MOSFETs." Conclusion The use of power MOSFET die for hybrid
-
OCR Scan
IRFC9130 irfc130 IRLC024 IRLC034 IRFC9014 irfcg20 AN-966 AN-955 AN-986 AN-964D

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 KELVIN IS = CURRENT SENSE Figure 11. HEX-2: 800V, 900V, & 1000V, N-Channel SK * SOURCE KELVIN IS = , -3: 200V & 250V, N- and P-Channel Figure 17. HEX-3: 400V, 500V, & 600V, N-Channel Figure 18. HEX-3: 800V , -4: 400V, 500V, & 600V, N-Channel Figure 25. HEX-4.5: 500V, N-Channel Figure 26. HEX-4: 800V, 900V, & , 500V, N-Channel Figure 31. HEX-5: 400V, 500V, & 600V, N-Channel Figure 32. HEX-5: 800V, 900V, & , use of power MOSFET die for hybrid assemblies can result in significant reduction in overall package
-
OCR Scan
HEXFET III - A new Generation of Power MOSFETs irf 1490 irfc9024 IRFC9240 application new hexfet AN966
Abstract: AUIRF9Z34N TO-220AB AUIRF9Z34N Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified , '" â'"â'"â'" â'"â'"â'" â'"â'"â'" â'"â'"â'" â'"â'"â'" 54 110 Conditions MOSFET symbol D -68 , )â' â' â'  AEC-Q101-002 Human Body Model Class H1B (+/- 800V)â' â' â'  AEC-Q101-001 Charged KERSEMI
Original

Diode 400V 5A

Abstract: lm1083 Features Package Q-Level P+N Channel MOSFET, SMD Id up to 1.2 A, SC70-6 rDSon 0.165 â"¦@Vin = , Small-Signal MOSFET Product Name Status 2N7002E-E3 2N7002K-E3 Description N-Channel Small-Signal Switching MOSFET NEW 60V/0.24A. Rdson=1.2ohm, Qg = 0.4 Nc SMD SOT-23 N-Channel Small-Signal Switching MOSFET 60V/0.3A. Rdson=1ohm, Qg = 0.4 nC SMD SOT-23 Small-Signal Schottky Diode , Status NEW Description N-Channel 40V (D-S) MOSFET Features Rdson=0.042ohm, ID=5.6A Package
-
Original
2C444 Diode 400V 5A lm1083 transistor 2n1208 bc109 spice BZY55C IRF9024 2C415 2C425 2C746 2N1131L 2N1132

3 watt 70v zener diode

Abstract: inkjet print head interface the NCP1014 monolithic switching controller/Mosfet (U1). Synchronous rectification is used on the , -4R7L or similar (4.7 uH, 4A). 6. Q1 is ON Semi NTD25P03LG P-channel Mosfet. 7. Q3 is ON Semi NTB30N06LT4G N-ch logic level Mosfet (D2Pak) 8. T2 is Coilcraft current sense xfmr T6522-AL (Np/Ns = 1:50) or , 1 1 D1, 2, 3, 4, 5 D6, D7 D8, D9 Q2, 4, 5 Q6 U1 Q1 Q3 U3 U2 U5 1A, 800V diode 100 , controller - 65 kHz P-channel Mosfet, 30V N-channel Mosfet, logic level Dual buck regulator SFH6156A-4 (4
Vishay Intertechnology
Original
3 watt 70v zener diode inkjet print head interface K784P DO-204AL DO-41 DO-201AD DO-220AA

npn smd 2n2222 smd

Abstract: transformer less power supply 12 volt 3A PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS , Forward Turn-On Time Ù Min. Typ. Max. Units â'"â'"â'" â'"â'"â'" MOSFET symbol -68 , M3 (+/- 250V)â' â' â'  AEC-Q101-002 Human Body Model Class H1B (+/- 800V)â' â' â'  AEC-Q101
ON Semiconductor
Original
npn smd 2n2222 smd transformer less power supply 12 volt 3A 2n2222 smd transistor 2N2222 SMD 2n2907 smd 2N2222 pinout DN06045/D NCP3120 BU16-4530R5BL RFB0807-4R7L DO3316P-153L MRA4007T3G
Showing first 20 results.