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HIP4083AB Intersil Corporation 3 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO16 visit Intersil
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P-Channel Depletion mosFET

Catalog Datasheet MFG & Type PDF Document Tags

DQ381

Abstract: P-Channel Depletion Mosfet Drain 2 12 11 1 6 i 9 20X ICMJB 15 N-ohannel depletion MOSFET 4 Capacitors 2 Diodes I Resistor I I P-channel depletion MOSFET DG390A Pad No. ' 88 m llt1 3 4 5 8 8 9 10 11 13 14 15 16 , Diodes 2 Resistors 22 P-channel depletion MOSFET 5-206 SILICONIX INC 03 dË J ÛES473S , depletion MOSFET 22 N-ohanne! depletion MOSFET 4 Diodes 5 DG384A - 88 m ils- Pad No. 1 3 4 5 6 8 9 10 , 22 P-ohannel depletion MOSFET 30 N-channel depletion MOSFET 4 Diodes 5-205 SILICONIX I N C
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OCR Scan
DQ381 P-Channel Depletion Mosfet depletion p mosfet Depletion MOSFET vd 5205 DG381AAK DG381A/384A/387A/390A DG180 DG38XA PLUS-40 DG387A AE5473S

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets N-Channel Depletion-Type MOSFET 6b) Circuit Arrangement for N-Channel Depletion MOSFET VDS = VGS ­ VGS , - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , interchangeable. initial rise in ID is related to the buildup of the depletion layer as VDS increases. The , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion
Temic Semiconductors
Original
P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note AN101

P-Channel Depletion Mosfets

Abstract: shockley diode ) Circuit Arrangement for N-Channel Depletion MOSFET VDS = VGS ­ VGS(th) Ohmic Region Characteristics , ) 6c) Family of Output Characteristics for N-Channel Depletion MOSFET 6d) Family of Output , - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by
Siliconix
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shockley diode shockley diode application shockley diode datasheet list of n channel fet jfet idss 10 ma vp -3 diode shockley

p channel depletion mosfet

Abstract: list of n channel fet Cross-Section Through an N-Channel Depletion-Type MOSFET 6b) Circuit Arrangement for N-Channel Depletion , N-Channel Depletion MOSFET 6d) Family of Output Characteristics for N-Channel Enhancement MOSFET Figure , both enhancement and depletion modes, and also exist as both n- and p-channel devices. The two main , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion
Temic Semiconductors
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p channel depletion mosfet Depletion MOSFET 6D list of n channel MOSFET JFETs Junction FETs Junction FETs JFETs list of fet

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet Through an NChannel DepletionType MOSFET 6b) Circuit Arrangement for NChannel Depletion MOSFET VDS = , Depletion MOSFET 6d) Family of Output Characteristics for NChannel Enhancement MOSFET Figure 6. 4 , enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , Not Possible Depletion n MOS p Depletion n Enhancement p n p Figure 1 , buildup of the depletion layer as VDS increases. The curve approaches the level of the limiting current
Temic Semiconductors
Original
an101 siliconix n mosfet depletion Siliconix AN Junction P FET

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion-Mode N-channel depletion MOSFET 12 16 VOLTS (C) Family of output characteristics for the Sil iconix 2N3631 N-channel depletion MOSFET Figure 7 in a manner similar to the N-Channel junction FET when a voltage of the , enhancement or depletion modes, and exist as both N- and P-Channel devices. The two main FET groups depend on , gradient established will form a depletion layer, where almost all the electrons present in the N-type , to the source). Figure 3B shows the almost complete depletion of the channel under these conditions
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P-Channel Depletion-Mode FET E202 2N3823 2N2606 2N3329 E202

IXTD24P20

Abstract: depletion mode mosfet N-Channel Depletion Mode MOSFET Type VDSS max. V IXTD 02N50D-1M IXTD 01N100D-1M 500 1000 RDSon max , depletion mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other depletion mode MOSFET, IXTP02N05D, is rated at VDSS = 500 Volts, ID = 200 mA, while its RDS , Depletion Mode MOSFETs Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, requires a , otherwise have similar MOSFET characteristics. Their Rds(on) and breakdown voltage have a positive
IXYS
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IXTD36P10-5B IXTD24P20-7B IXTH50P10 IXTH7P50 IXTD24P20 depletion mode mosfet DEPLETION ixtd8p50 depletion mode 02N50D 01N100D IXTP01N100D IXTD50P10-7B IXTD16P20-5B

op amp cookbook

Abstract: N-Channel JFET Vgsoff & PNP Depletion Mode JFETs: N-Channel & P-Channel Enhancement Mode MOSFETs: N-Channel & P-Channel , reverse voltage > BV(BR)ebo N-Channel Depletion Mode JFET d + Id g Vds Vgs + s Ohmic Region = Triode Region Saturation Region = Pinch-off Region N_jfet.tsc N-Channel Depletion Mode JFET: Vgs = 0V N-Channel Depletion Mode JFET Voltage Controlled Device N-Channel Depletion , A Is 3.214024mA N-Channel Depletion Mode JFET: Vgs = -2.04V N-Channel Depletion Mode JFET
Texas Instruments
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op amp cookbook N-Channel JFET Vgsoff N-Channel jfet 100V depletion Texas Instruments LED Cookbook analog optocoupler hcnr201 n-Channel Depletion Mosfets 20AND 20BEP 20FET HCNR200/HCNR201

P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 FIELD-EFFECT TRANSISTORS (continued) MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel, and both , ) P-Channel MOSFETs MOSFETs Single Gate P-CHANNEL Enhancement N-CHANNEL Depletion N-CHANNEL Enhancement , '"0.5 -8.0 5.0 25 t = typical *N-Channel MOSFET MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-59
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3N155A MFE3003 2N3796 MFE825 2N4351 3N169 mosfet 2N3796 2N3797 MFE3002 MFE823

2N3797

Abstract: MPF102 equivalent transistor MOSFET Structure. This Type of Device may be Designed to Operate in Both the Enhancement and Depletion , . 1993 GATE 1 P (a) (­) P SOURCE N DRAIN N SOURCE GATE 1 DEPLETION ZONES , between the source and the drain and are thus called gate regions. As with any p-n junction, a depletion , voltage is increased, the depletion regions spread into the channel until they meet, creating an almost , , the depletion regions again spread into the channel because of the voltage drop in the channel which
Motorola
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MPF102 equivalent transistor mpf102 fet MPF102 JFET 2N3797 equivalent 2N4221 motorola MPF102 Transistor AN211A/D AN211A

AN211A

Abstract: MPF102 JFET MOSFET Structure. This Type of Device may be Designed to Operate in Both the Enhancement and Depletion , SOURCE GATE 1 DEPLETION ZONES (­) P GATE 2 (b) DRAIN P (­) GATE 1 GATE 2 , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figure 1c). As the reverse voltage is increased, the depletion regions , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into
Motorola
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MPF102 JFET data sheet mpf102 equivalent P channel depletion mode fet JFET TRANSISTOR REPLACEMENT GUIDE mpf102 equivalent TRANSISTOR REPLACEMENT GUIDE FET

P-Channel Depletion-Mode MOSFET

Abstract: FET pair n-channel p-channel MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article will look at depletion mode MOSFET device structure, operation and , â'enhancement-modeâ' MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has
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P-Channel Depletion-Mode MOSFET FET pair n-channel p-channel

TLV2426

Abstract: op amp cookbook triode region the MOSFET can be used as a voltage-controlled resistor similar to the Depletion Mode JFET , Review Bipolar Transistors: NPN & PNP Depletion Mode JFETs: N-Channel & P-Channel Enhancement Mode , collector-emitter voltage as current flows from emitter through collector. 5 N-Channel Depletion Mode JFET , Pinch-off Region N_jfet.tsc N-Channel Depletion Mode JFETs are fully turned on with Vgs = 0V and it , resistor. 6 N-Channel Depletion Mode JFET: Vgs = 0V N-Channel Depletion Mode JFET Voltage
Texas Instruments
Original
TLV2426 MMBT2222 OPA364 Resistor - Wikipedia 2N3955

MPF102 JFET

Abstract: motorola AN211A refers Figure 7. Depletion Mode MOSFET Structure. This Type of Device May Be Designed to Operate in , called gate regions. As with any p-n junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figure 1c). As the reverse voltage is increased, the depletion regions , , parallel to the channel. As the drain-source voltage increases, the depletion regions again spread into , increased, the depletion regions grow until they meet, whereby any further increase in voltage is
Motorola
Original
motorola AN211A 2N4221 MOTOROLA POWER TRANSISTOR MPF102 circuit application JFET with Yos 2N4351 MOTOROLA igfet

MPF102 equivalent transistor

Abstract: MPF102 JFET volts (Figure 7). In this manner, the MOSFET can be made to exhibit depletion characteristics. For , -+ ±±±±±±±±±±±±± + + + N N+ N+ P (SUBSTRATE) Figure 7. Depletion Mode MOSFET , the "Metal-Oxide Semiconductor" Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect , to the channel. As the drain-source voltage increases, the depletion regions again spread into the , , the depletion regions grow until they meet, whereby any further increase in voltage is counterbalanced
ON Semiconductor
Original
mpf102 application note 2N5458 equivalent equivalent to MPF102 Transistors MPF102 n-channel MFE2012 jfet idss 10 vp -6

depletion 400V power mosfet

Abstract: P-Channel mosfet 400v Memory IC IN4625 (5.1V) 500V depletion mode MOSFET 1.0µamp maximum quiescent current 1.0mamp , MOSFET -2.0V maximum threshold voltage Guaranteed 15 maximum on-resistance at VGS = -2.5V Negligible , Microphone Pulse Dialer IC Mute 400V N-channel MOSFET 1.8V maximum threshold voltage Maximum
Supertex
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TP2640N3 TN2540N8 LND150N3 depletion 400V power mosfet P-Channel mosfet 400v MOSFET 400V N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET AN-D27

SLUS452

Abstract: bq24700 product preview 2000 MOSFET gate drive PARAMETER AC driver RDS(on) high AC driver RDS(on) low Battery driver , fault time delay ACSEL low to alarm reset low in ac fault time delay Battery depletion ALARM trip , select output. This pin drives an external P-channel MOSFET used to switch to the ac wall-adapter as the , battery to BATDEP pin is used to set the battery voltage level at which depletion is indicated by the ALARM pin. See ALARM pin for more details. A battery depletion is detected when BATDEP is less than 1.2
Texas Instruments
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SLUS452 bq24700 product preview bq24700

1600 v mosfet

Abstract: power mosfet 500 A 150 A 6 6 6 7 MOSFET Chips VDSS HiPerFET Power MOSFET PolarHTTM MOSFET, very Low RDS(on) P-Channel Power MOSFET N-Channel Depletion Mode MOSFET Layouts TM RDS(on) 0.005 . 4.5 0.015 . 0.135 0.06
IXYS
Original
1600 v mosfet power mosfet 500 A

SLUS452A

Abstract: TDA 1251 specified) VCC 30.0 Vdc, all voltages relative to Vss) (unless MOSFET gate drive PARAMETER TEST , VNOBAT Battery depletion ALARM trip voltage See Note 8 1.165 1.220 1.275 No battery , source select output. This pin drives an external P-channel MOSFET used to switch to the ac wall-adapter , the battery voltage level at which depletion is indicated by the ALARM pin. See ALARM pin for more details. A battery depletion is detected when BATDEP is less than 1.2 V. A no battery condition is
Texas Instruments
Original
SLUS452A TDA 1251 Notebook PC Service Manual mosfet drive 23C310 ACP-12 charger

MCp SOT 23-6

Abstract: 013g , the depletion region expansion required by high withstand voltage operation is unstable. To make the depletion layer expand steadily, diffusion layers (guard rings) of the same conduction type as that of the base layer were made within the collector. This allows the depletion layer from the base-collector junction to expand with the depletion layers of the guard rings one after the other, resulting in a stable depletion layer cross the collector. In addition, a multi-layer protection film is added to prevent the
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MCp SOT 23-6 013g T0-126ML 2sc4710 e1aj 2SC4630LS T0-220FI T0-220 SC-64 SC-63 T0-251 SC-83
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