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Part Manufacturer Description Datasheet BUY
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

P-Channel Depletion Mosfets

Catalog Datasheet MFG & Type PDF Document Tags

P-Channel Depletion Mosfets

Abstract: P-Channel Depletion /384A/387A/390A DIE TOPOGRAPHY ICMJC 4 Capacitors 2 Resistors 4 Diodes *C = DG381A 18 p-channel Depletion MOSFETs 22 n-channel Depletion MOSFETs ICMJB 4 Capacitors 1 Resistor 2 Diodes * B = DG387A 11 p-channel Depletion MOSFETs 15 n-channel Depletion MOSFETs Pad No. 1 3 4 5 6 6 10 11 , 16 11 13 14 *A = DG384A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs ICMJC Capacitors 2 Resistors 4 Diodes 8 *C = DG390A 22 p-channel Depletion MOSFETs 30 n-channel Depletion
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P-Channel Depletion Mosfets P-Channel Depletion DG381AAK DG390ad DG381A/384A/387A/390A DG180 DG38XA PLUS-40 DG381A/DG387A DG384A/DG390A

P-Channel Depletion Mosfets

Abstract: DG307ABK Capacitors 2 Resistors 4 Diodes D = DG304A 16 p-channel Depletion MOSFETs 20 n-channel Depletion MOSFETs ICMJD 6 Capacitors 2 Resistors 4 Diodes D = DG306A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs ICMJE 4 Capacitors 1 Resistor 2 Diodes ICMJF 8 Capacitors 2 Resistors 4 Diodes *E = DG305A 10 p-channel Depletion MOSFETs 14 n-channel Depletion MOSFETs *F = DG307A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs DS XXIC 10632 9003 - 5-85 DG304A/305A/306A/307A
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DG307ABK 1N diode 306A DG306ACJ

P-Channel Depletion Mosfets

Abstract: B4477 Capacitors 2 Resistors 4 Diodes *C = DG381A 18 p-channel Depletion MOSFETs 22 n-channel Depletion MOSFETs ICMJB 4 Capacitors 1 Resistor 2 Diodes *B = DG387A 11 p-channel Depletion MOSFETs 15 n-channel Depletion MOSFETs Pad No. 1 Function DG384A Pad No. 1 3 4 5 87 m il* 8 9 10 11 6 , Resistors 4 Diodes ICMJC 8 Capacitors 2 Resistors 4 Diodes *A DG384A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs *C = DG390A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs
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B4477 SSM73S

P-Channel Depletion Mosfets

Abstract: dg303aak 2 Resistors 4 Diodes *A = DG300A 18 p-channel Depletion MOSFETs 22 n-channel D e le tio n MOSFETs ICMJA 8 Capacitors 2 Resistors 4 Diodes * A = DG302A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs Pad No. 2 3 4 5 6 7 8 9 10 11 12 13 14 Function DG301A Di s, NC NC IN GND VNC , Capacitors 2 Resistors 4 Diodes * B = DG301A 11 p-channel Depletion MOSFETs 15 n-channel Depletion MOSFETs *C = DG303A 22 p-channel Depletion MOSFETs 30 n-channel Depletion MOSFETs DS XXIC 10531 9003 -
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dg303aak DG303ACJ DG300ACJ DG302ACJ DG300A/301A/302A/303A DG300A-DG303A DG300A/301

P-Channel Depletion Mosfets

Abstract: 10535 TOPOGRAPHY Pad No. 1 3 4 5 6 8 9 10 11 12 13 14 15 16 ICMKB 6 Resistors 7 Capacitors 9 Diodes 31 p-channel Depletion MOSFETs 33 n-channel Depletion MOSFETs Function Di d3 S3 S, D* D2 S2 !N2 V+ (Substrate) Vl
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10535 DG5043 DG403/405 DG5043CJ

DG308

Abstract: JR 309 Diodes *A = DG308A, *B - DG309 36 p-channel Depletion MOSFETs 40 n-channel Depletion MOSFETs 8 9 10 s3
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DG308 JR 309 DG308A/309

HP3571A

Abstract: P-Channel Depletion Mosfets apacitors 2 R esistors 22 P-channel depletion MOSFETs 11 12 30 N -channel depletion MOSFETs 4 Diodes
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HP3330B HP3571A DG403D DGP303 DGP303ADJ DGP303A

DG186ba

Abstract: JFET 1, Source F G H 5 CMJC 4 Capacitors 4 Resistors 6 p-channel Depletion MOSFETS 4 n-channei Depletion MOSFETS 5 PNP bipolar Transistors 4 NPN bipolar Transistors 4 Diodes TYPICAL
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DG186ba DG186/187/188 DG186-188 DG186 DG187 DG188 DG187/188

CMJB

Abstract: P-Channel Depletion Mosfets + VL Vr V- (Substrate) IN, T CMJB 6 Capacitors 7 Resistors 8 p-channel Depletion MOSFETs 2 n-channel Depletion MOSFETs 8 PNP bipolar Transistors 4 NPN bipolar Transistors 4 Diodes TYPICAL
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CMJB DG180/181 DG180-182 DG181 DG102 DG181/182 OG181

CMJB

Abstract: CMJ-B ) 44 m ilt CMJB 8 Capacitors 7 Resistors 12 p-channel Depletion MOSFETs 4 n-channel Depletion MOSFETs 10 PNP bipolar Transistors 4 NPN bipolar Transistors 4 Diodes TYPICAL CHARACTERISTICS liN
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CMJ-B DG189/190/191 DG189-191 DG189 DG190 DG191 DG190/191

jfet k 184

Abstract: P-Channel Depletion Mosfets Resistors 12 p-channel Depletion MOSFETS 4 n-ohannel Depletion MOSFETs 10 PNP bipolar Transistors 4 NPN
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jfet k 184 DG183/184/185 DG183-185 DG183 DQ184 DG185

P-Channel Depletion Mosfets

Abstract: 0g190 Resistors 12 p-channel Depletion MOSFETs 4 n-channel Depletion MOSFETs II« Pad Function No. 10 in2 11 V
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0g190 DG189BP JFET dg190 DG189AR 89/190/19T E54735 DG19I H5M73S T-51-11

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , interchangeable. initial rise in ID is related to the buildup of the depletion layer as VDS increases. The , which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion
Temic Semiconductors
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P-Channel Depletion Mode FET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note AN101

p channel depletion mosfet

Abstract: list of n channel fet MOSFETs and JFETS. JFETs, by nature, operate only in the depletion mode. That is, a reverse gate bias , (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n- and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and also exist as both n- and p-channel devices. The two main , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p
Temic Semiconductors
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p channel depletion mosfet list of n channel fet shockley diode Depletion MOSFET 6D list of n channel MOSFET JFETs Junction FETs

P-Channel Depletion Mosfets

Abstract: shockley diode - and p-channel configurations. MOSFETs are available in both enhancement and depletion modes, and , and 4, MOSFETs can assume several forms and operate in either the depletion/enhancement-mode or , main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor , Enhancement Not Possible Depletion n MOS p Depletion n Enhancement p n p , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by
Siliconix
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shockley diode application shockley diode datasheet jfet idss 10 ma vp -3 diode shockley shockley depletion mode fet

P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 FIELD-EFFECT TRANSISTORS (continued) MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel, and both single gate and dual gate construction. Some MOSFETs are also offered with input diode protection which , ) P-Channel MOSFETs MOSFETs Single Gate P-CHANNEL Enhancement N-CHANNEL Depletion N-CHANNEL Enhancement
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3N155A MFE3003 2N3796 MFE825 2N4351 3N169 mosfet 2N3796 2N3797 MFE3002 MFE823

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet MOSFETs, metaloxide semiconductor fieldeffect transistors). Junction FETs are inherently depletionmode devices, and are available in both n and pchannel configurations. MOSFETs are available in both enhancement and depletion modes, and also exist as both n and pchannel devices. The two main FET groups , Not Possible Depletion n MOS p Depletion n Enhancement p n p Figure 1 , buildup of the depletion layer as VDS increases. The curve approaches the level of the limiting current
Temic Semiconductors
Original
an101 siliconix Junction FETs JFETs Depletion MOSFET n mosfet depletion Siliconix AN

IXTD24P20

Abstract: depletion mode mosfet Depletion Mode MOSFETs Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, requires a , N-Channel Depletion Mode MOSFET Type VDSS max. V IXTD 02N50D-1M IXTD 01N100D-1M 500 1000 RDSon max. 30 110 1M 1M Chip type Chip size dimensions mm 1.96 x 1.68 1.96 x 1.68 mils 77 x 66 77 x 66 3 mil x 1 , depletion mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other depletion mode MOSFET, IXTP02N05D, is rated at VDSS = 500 Volts, ID = 200 mA, while its RDS
IXYS
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IXTD36P10-5B IXTD24P20-7B IXTH50P10 IXTH7P50 IXTD24P20 depletion mode mosfet DEPLETION ixtd8p50 depletion mode 02N50D 01N100D IXTP01N100D IXTD50P10-7B IXTD16P20-5B

P-Channel Depletion-Mode MOSFET

Abstract: FET pair n-channel p-channel An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the , by other means. This article will look at depletion mode MOSFET device structure, operation and , â'enhancement-modeâ' types. Although MOSFETs can be made in either polarity, N-channel MOSFETs are available in all , sometimes create Pchannel depletion devices during the manufacture of certain analog and digital ICs. In , enhancement-mode transistors, which are â'normally-offâ' devices, depletionmode MOSFETs are â'normally-onâ
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P-Channel Depletion-Mode MOSFET FET pair n-channel p-channel

BF900

Abstract: TIS69 TO THE 100-MIL PIN CIRCLE OF THE TO-18 PACKAGE Dual Gate Mosfets for VHF/UHF|(N-Channel Depletion , static change N-Channel Mosfets (Depletion Mode) BVDGO IGSS VGS(off) IDSS Yfs Ciss PDS , 900 UHF Amp P-Channel Mosfets (Enhancement Mode) BVDGO IGSS VGS(th) lD(on) Yfs Ciss rds(on , pF a TIS159 T0226A 40 1.0 1.0 3.1 5 30 1 4 4 300 Non protected Mosfets requiring , mmho pF n TIS163 T0226A 40 1.0 1.0 2.8 0.5 5.0 1.0 4.0 4 500 Non protected Mosfets
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BF900 C2T204 C2T205 C2T206 C2T211 C2T212 TIS69 TIS68 BF905 TI570 TIS88
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