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P-CHANNEL 45A TO-247 POWER MOSFET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IXTH90P10P IXTT90P10P PolarPTM Power MOSFET VDSS ID25 = = RDS(on) - 100V - 90A 25m P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions , 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-247 TO-268 G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features , Reserved V - 4.0 V 25 m Easy to Mount Space Savings High Power Density Applications IXYS
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90P10P
Abstract: , 0.030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power MOSFET is manufactured using , Symbol 0 ' BRAND RFG60P06E S I I Ordering Information PART NUMBER RFG60P06E PACKAGE TO-247 NOTE: When ordering use the entire part numberr RFG60P06E. Packaging JEDEC STYLE TO-247 5-46 C A U , Temperature . . TJ- T STG Power D issipation Derate Above 2 5 ° C , Transient Thermal Impedance curve (Figure 3). SYMBOL VSD trr TEST CONDITIONS Is d = 45A ISd = 45A, dlSD/dt = -
OCR Scan
TA09836 60P06E 1750C AN7254 AN7260
Abstract: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS(on) - 100V - 90A 25mâ"¦ â"¦ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test , Mounting Torque (TO-247) Weight TO-247 TO-268 G S (TAB) G = Gate S = Source D = Drain , "¦ Easy to Mount Space Savings High Power Density Applications High-Side Switches Push Pull , VGS = -10V, VDS = 0.5 â'¢ VDSS, ID = 0.5 â'¢ ID25 Qgd 0.27 °C/W RthJC RthCS (TO-247 IXYS
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Abstract: Summit Microelectronics, Inc., 300 Orchard City Drive Campbell, CA 95008. Phone 408-378-6461 www.summitmicro.com Suggested Power MOSFET Switches for Hot-Swap Controller ICs Nov-99 N-Channel Part Number , 25 milliohms max 4.5A 9.2A 140A 4.3A 7.7A 9.1A 57A Micro-8 SO-8 D2PAK DPAK DPAK DPAK , -8 D2PAK IXFX180N10 IXYS 100V 8 milliohms max 180A TO-247 MTSF3N03HD MMSF7N03HD , max 40 milliohms max 20 milliohms max 4.5A 6.5A 5.8A 8A TSSOP-8 TSSOP-8 SO-8 SO Summit Microelectronics
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IRF7603 IRFR110 IRFR120 IRF3710S HUF75631SK8 IRF7606 P-channel power mosfet SO-8 30V 9.2A 20 Siliconix 100v P-Channel DPAK P-channel power mosfet SO-8 Vishay Siliconix P-channel N-Channel power mosfet SO-8 IRF7413 IRL3803S IRFR120N
Abstract: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 , © TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150 , TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25°C, unless otherwise specified , charge results in simple drive requirement High power density Fast switching Easy to parallel 25 IXYS
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Abstract: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control , C-Series 15A, 500V, 0.38, N-Channel SMPS Power MOSFET N-Channel PowerTrench; MOSFET 14A, 600V, 0.490, N-Channel SPMS Power MOSFET Dual Notebook Power Supply NChannel PowerTrench; in SO-14 Package N-Channel Fast Body-Diode SMPS Power MOSFET A full list of new product highlights and detailed , FDC6901L 30V N-Channel PowerTrench; MOSFET N-Channel PowerTrench; MOSFET, 75V, 80A, 3.8M TO-247 Fairchild Semiconductor
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FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FDJ129P NC7SV19 VRM10 FDC6901L/FDG901D 247TM
Abstract: Power MOSFET/Package TM = Metal Can TO-204 (TO-3) TP = TO-220 TH = TO-247 l0 Current Rating 12 = 12 , Continuous (Tc =25°C) Drain Current Pulsed (3) Total Power Dissipation Power Dissipation Derating >25 , 12N45, 45A 12N50, 50A ALL ALL ALL ALL 12N45, 50A 12N45, 50 ALL ALL ALL ALL ALL ALL ALL ALL ALL ALL ALL , Junction-to-Case Junction-to-Ambient TO-204 Junction-to-Ambient TO-247 R|hJA ^IhJA IXTM IXTH IXTM IXTH - , - 12.0 48.0 1.5 - A A V ns - - Modified MOSFET symbol showing the integral reverse -
OCR Scan
IXTH12N50 IXTH12N45 IXTM12N45 IXTM12N50
Abstract: -220 500V Single N-Channel HEXFET Power MOSFET in a 15 MTP package 15 500V 19.000A MTP 15 500V 19.000A Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
Abstract: .441 .472 Q 3.86 4.11 .152 .162 R 24.84 25.47 .978 1.00 IXYS- Power MOS Power MOSFET/Package â  PART , 16 A Total Power Dissipation Po 75 W Power Dissipation Derating >25°C 0.6 W/°C , Parameter Type Min. Typ. Max. Units Test Conditions BVqss Drain-Source Breakdown Voltage 4N45, 45A 450 - - , CHARACTERISTICS ls Continuous Source Current (Body Diode) ALL - - 4.0 A Modifled MOSFET symbol s^Z , -220 AB lfiE D â  HbôbHSb OOdObOS 4 â  PACKAGE OUTLINES AND PINOUTS TO-247 TO-204 AA »-s 3 â¡ k-n WN1 -
OCR Scan
IXTM4N45 IXTM4N50 Mosfet K 135 To3 1XTP4N45 IXTP4N50 IXTP4N45 4N45A
Abstract: .162 R 24.84 25.47 .978 1.00 IXYS- Power MOS Power MOSFET/Package â  PART NUMBER DESCRIPTION IX TM 6 N , Power Dissipation Pd 125 W Power Dissipation Deratîng >25°C 1.0 W/°C Operatlng and , Parameter â type Min. Typ. Max. Units Test Conditions BVdss Drain-Source Breakdown Voltage 7N45, 45A 450 , u Continuous Source Current (Body Dlode) ALL - - 7.0 A Modified MOSFET symbol showing the integral ,   HbôbHSb OOdObOS 4 â  PACKAGE OUTLINES AND PINOUTS TO-247 TO-204 AA »-s 3 â¡ k-n WN1. GATE 2. DRAIN 3 -
OCR Scan
IXTM7N50 ixtm7n45 1XTP7N45 IXTP7N50 IXTM7N45 IXTP7N45 7N45A
Abstract: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET File Number 3989.3 Features · 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured , PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options , Temperature D Ordering Information PART NUMBER RFG60P06E PACKAGE TO-247 BRAND G RFG60P06E NOTE: When ordering use the entire part numberr RFG60P06E. S Packaging JEDEC STYLE TO-247 Intersil
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rfg60p06 ISO9000
Abstract: International IöR Rectifier â'¢ Ultra Low On-Resistance â'¢ P-Channel MOSFET â'¢ Surface Mount â'¢ Available in Tape & Reel PD-91844A IRF7210 HEXFET® Power MOSFET im f2- D =m LJL D nn Description These , varlety of power appllcatlons. Wlth these ¡mprovements, múltiple devlces can be used in an appllcation , °C Power Dissipation 2.5 W Pd@Ta = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C Vqs , ls Continuous Source Current (Body Diode) - -2.5 MOSFET symbol showing the f D n ISM Pulsed -
OCR Scan
IRE7101 EIA-481 EIA-541
Abstract: 4V Drive Pch+Pch MOSFET SH8J66 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 , Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature , 35 9 12 Max. ±10 - -1 -2.5 18.5 23.6 24.7 - - - - - - - - - - - Gate-source leakage - IGSS , ID= -9A, VGS= -10V ID= -4.5A, VGS= -4.5V ID= -4.5A, VGS= -4.0V VDS= -10V, ID= -9A VDS= -10V VGS=0V f=1MHz VDD -15V ID= -4.5A VGS= -10V RL=3.3 RG=10 VDD -15V ID= -9A VGS= -5V RL=1.7 / RG=10 Body diode ROHM
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R0039A
Abstract: 4V Drive Pch+Pch MOSFET SH8J66 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET , Total power dissipation Channel temperature Range of Storage temperature 1 1 PD Tch Tstg , 170 100 35 9 12 ±10 - -1 -2.5 18.5 23.6 24.7 - - - - - - - - - - - Unit A , = -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -9A, VGS= -10V ID= -4.5A, VGS= -4.5V ID= -4.5A, VGS= -4.0V VDS= -10V, ID= -9A VDS= -10V VGS=0V f=1MHz VDD -15V ID= -4.5A VGS= -10V RL ROHM
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TR151
Abstract: FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET ­20V, ­4.5A, 43m Features General Description Max rDS(on) = 43m at VGS = ­4.5V, ID = ­4.5A This P-Channel 2.5V specified MOSFET is , trench technology for extremely low rDS(on). These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion , 3 3 4 S D D Pin 1 SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise Fairchild Semiconductor
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638Z MOSFET 20V 45A FDC638ASPZ
Abstract: AAT8343 20V P-Channel Power MOSFET General Description Features The AAT8343 is a low , P-Channel Power MOSFET Electrical Characteristics Symbol (TJ=25°C unless otherwise noted , . 2 8343.2004.03.0.9 AAT8343 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC , 125 150 T J (ºC) 3 AAT8343 20V P-Channel Power MOSFET Typical Characteristics (TJ = , 100 1000 8343.2004.03.0.9 AAT8343 20V P-Channel Power MOSFET Ordering Information Advanced Analogic Technologies
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AAT8343IDU-T1
Abstract: AAT8343 20V P-Channel Power MOSFET General Description Features The AAT8343 is a low , 300us. 8343.2005.04.1.0 1 AAT8343 20V P-Channel Power MOSFET Electrical Characteristics TJ = , 's design. 2 8343.2005.04.1.0 AAT8343 20V P-Channel Power MOSFET Typical Characteristics TJ = , 100 125 150 T J (ºC) 3 AAT8343 20V P-Channel Power MOSFET Typical Characteristics , 100 1000 8343.2005.04.1.0 AAT8343 20V P-Channel Power MOSFET Ordering Information Package Advanced Analogic Technologies
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Abstract: Min Typ Max Unit RdsON Power P-channel/N-channel MOSFET RdsON Idd = 1 A - 200 270 mâ"¦ Idss Power P-channel/N-channel leakage Idss VCC = 35 V - - 50 ÂuA , STA515W 40-volt, 3-amp, quad power half bridge Features Ì Multipower BCD technology Ì , : normal operation 26 TRISTATE I Hi-Z pin: 0: all power amplifier outputs in high-impedance , Operating temperature range 0 to 70 °C Ptot Power dissipation (Tcase = 70 °C) 21 W STMicroelectronics
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SSO36 STA515W13TR
Abstract: Parameter Test conditions Min Typ Max Unit RdsON Power P-channel/N-channel MOSFET RdsON Idd = 1 A - 200 270 m Idss Power P-channel/N-channel leakage Idss VCC , STA515W 40 V, 3 A, quad power half bridge Datasheet - production data Description The STA515W , : 0: low-power mode 1: normal operation 26 TRISTATE I Hi-Z pin: 0: all power amplifier , to 32 5.5 V Top Operating temperature range 0 to 70 °C Ptot Power STMicroelectronics
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22i st ID11079
Abstract: included on-chip. The MAX8568A/MAX8568B also manage backup switchover from a primary power source. An , and memory) when main power falls. On-chip drivers switch external MOSFETs to disconnect the main , Continuous Power Dissipation (TA = +70°C) 16-Pin 3mm x 3mm Thin QFN (derate 15.6mW/°C above +70°C , 1 7 mV 2.43 2.48 VINOK rising 2.40 2.47 2.54 TA = +25°C 0.005 0.1 , other power source. Bypass with a 4.7ÂuF ceramic capacitor to GND. 2 BK Backup Battery Input Maxim Integrated Products
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MAX8568A MAX8568B SPP-012 MO220
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