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CS5346-DQZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, PQFP48, LEAD FREE, MS-022, LQFP-48 visit Digikey Buy
CS53L21-DNZR Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, 5 X 5 MM, LEAD FREE, MO-220, QFN-32 visit Digikey Buy
CS5342-CZZR Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, PDSO16, 4.40 MM, LEAD FREE, MO-153, TSSOP-16 visit Digikey Buy
CS5346-CQZ Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, PQFP48, LEAD FREE, MS-022, LQFP-48 visit Digikey Buy
CS5366-DQZR Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 6 Channel, Serial Access, PQFP48, LEAD FREE, MS-026, LQFP-48 visit Digikey Buy
CS5381-KSZR Cirrus Logic ADC, Delta-Sigma, 24-Bit, 1 Func, 2 Channel, Serial Access, CMOS, PDSO24, 300 MIL, LEAD FREE, SOIC-24 visit Digikey Buy

P-CHANNEL+45A+TO-247+POWER+MOSFET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 0.215 at VGS = - 1.5 V ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 1.5 7.8 nC 5.6 nC Qg (Typ , ID Symbol VDS VGS 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 N-Channel 12 ±8 - 4.5a - 4.5a - 4.5a, b, c - 3.7b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c Vishay Siliconix
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P5806NVG

Abstract: SEM 2004 P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 60 58m 4.5A P-Channel -60 90m -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless , 100 135 VGS = 10V, ID = 4.5A N-Ch 42 58 P-Ch 70 90 VDS = 10V, ID = 4.5A , N-Channel N-Ch 12 16 VDS = 0.5V (BR)DSS, VGS = 10V, P-Ch 11 15 ID = 4.5A gfs
Niko Semiconductor
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SEM 2004
Abstract: 0.170 at VGS = - 1.5 V PowerPAK SC-70-6 Dual FEATURES ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 4.5a 8.2 nC 5.6 nC Qg (Typ.) · Halogen-free According to IEC 61249-2-21 Definition · , N-Channel 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 4.3b, c - 3.8b, c - 15 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c P-Channel - 12 Unit V Vishay Siliconix
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A517DJ SC-70 2002/95/EC A517DJ-T1-GE3 2011/65/EU
Abstract: PRODUCT SUMMARY VDS (V) 0.050 at VGS = 1.8 V 4.5a 0.059 at VGS = - 4.5 V - 4.5a 0.081at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 0.215 at VGS = - 1.5 V - 12 4.5a 0.070 at VGS = 1.5 V P-Channel 4.5a â'¢ Halogen-free According to IEC 61249-2-21 Definition â , Tested â'¢ Compliant to RoHS Directive 2002/95/EC 4.5a 0.040 at VGS = 2.5 V 12 ID (A , Drain-Source Voltage VDS 12 Gate-Source Voltage VGS P-Channel - 12 V ±8 4.5a - 4.5a Vishay Siliconix
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A533EDJ A533EDJ-T1-GE3 JS709A

SC-70-6

Abstract: SIA517DJ-T1-GE3 PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.029 at VGS = 4.5 V 12 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V N-Channel 4.5a 0.034 at VGS = 2.5 V 0.061 at VGS = - 4.5 V - 12 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 5.6 nC 4.5a - 4.5a 0.170 at VGS = - 1.5 V P-Channel · Halogen-free According to IEC 61249-2-21 , Area - Low On-Resistance · Compliant to RoHS Directive 2002/95/EC Qg (Typ.) - 4.5a 8.2 nC
Vishay Siliconix
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SIA517DJ-T1-GE3
Abstract: 0.170 at VGS = - 1.5 V PowerPAK SC-70-6 Dual FEATURES ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 4.5a 8.2 nC 5.6 nC Qg (Typ.) · Halogen-free According to IEC 61249-2-21 Definition · , N-Channel 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 4.3b, c - 3.8b, c - 15 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c P-Channel - 12 Unit V Vishay Siliconix
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65706

Abstract: SC-70-6 PRODUCT SUMMARY VDS (V) 0.050 at VGS = 1.8 V 4.5a 0.059 at VGS = - 4.5 V - 4.5a 0.081at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 0.215 at VGS = - 1.5 V - 12 4.5a 0.070 at VGS = 1.5 V P-Channel 4.5a · Halogen-free According to IEC 61249-2-21 Definition · , Compliant to RoHS Directive 2002/95/EC 4.5a 0.040 at VGS = 2.5 V 12 ID (A) 0.034 at VGS = 4.5 , VDS 12 Gate-Source Voltage VGS P-Channel - 12 V ±8 4.5a - 4.5a 4.5a -
Vishay Siliconix
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65706 SiA533EDJ

638Z

Abstract: FDC638APZ FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET ­20V, ­4.5A, 43m Features General Description Max rDS(on) = 43m at VGS = ­4.5V, ID = ­4.5A This P-Channel 2.5V specified MOSFET is , 25°C 2.9 VGS = ­4.5V, ID = ­4.5A 37 43 rDS(on) Static Drain to Source On Resistance VGS = ­2.5V, ID = ­3.8A 52 68 VGS = ­4.5V, ID = ­4.5A, TJ = 125°C 50 72 ID(on) On-State Drain Current VGS = ­10V, VDS = ­4.5A gFS Forward Transconductance ­0.4 VDS = ­10V
Fairchild Semiconductor
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638Z MOSFET 20V 45A FDC638ASPZ
Abstract: PRODUCT SUMMARY VDS (V) 0.050 at VGS = 1.8 V 4.5a 0.059 at VGS = - 4.5 V - 4.5a 0.081at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 0.215 at VGS = - 1.5 V - 12 4.5a 0.070 at VGS = 1.5 V P-Channel 4.5a â'¢ Halogen-free According to IEC 61249-2-21 Definition â , Tested â'¢ Compliant to RoHS Directive 2002/95/EC 4.5a 0.040 at VGS = 2.5 V 12 ID (A , Drain-Source Voltage VDS 12 Gate-Source Voltage VGS TC = 70 °C TA = 25 °C - 12 ±8 4.5a Vishay Siliconix
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SIA517DJ-T1-GE3

Abstract: SIA517DJ PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.029 at VGS = 4.5 V 12 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V N-Channel 4.5a 0.034 at VGS = 2.5 V 0.061 at VGS = - 4.5 V - 12 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 5.6 nC 4.5a - 4.5a 0.170 at VGS = - 1.5 V P-Channel · Halogen-free According to IEC 61249-2-21 , Area - Low On-Resistance · Compliant to RoHS Directive 2002/95/EC Qg (Typ.) - 4.5a 8.2 nC
Vishay Siliconix
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SIA517DJ

DIODE SMD 10A

Abstract: 56 pF CH 1.0 2.5 VDS=-10V,ID=-1mA P-Ch -1.0 -2.5 ID=7.0A,VGS=4.5V ID=-4.5A,VGS=-4.5V 23 , VSD www.kexin.com.cn V 33 56 57 80 65 m 35 40 ID=-4.5A,VGS=-4.0V A 24 25 P-Ch A V 17 N-Ch ID=-4.5A,VGS=-10A Forward transfer admittance Unit 10 , resistance Typ VGS= 20V,VDS=0V 90 ID=7.0A,VDS=10V N-Ch 5.0 ID=-4.5A,VDS=-10V P-Ch , 1.9 P-Channel P-Ch 2.5 VDD=-15V,VGS=-5V,ID=-4.5A N-Ch 3.3 P-Ch 11.8 3.0
Kexin
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DIODE SMD 10A 56 pF CH PCH190 KP8M10

P5506

Abstract: P5506NVG P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 60 55m 4.5A P-Channel , 21 ID = 4.5A N-Ch 2.4 P-Channel P-Ch 2.5 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.6 ID = -3.5A P-Ch 3.0 VGS = -4.5V, ID = -3A m RDS(ON) VGS = 10V, ID = 4.5A VGS = , Enhancement Mode Field Effect Transistor NIKO-SEM gfs VDS = 10V, ID = 4.5A VDS = -5V, ID = -3.5A
Niko Semiconductor
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P5506 AUG-17-2004
Abstract: 0.215 at VGS = - 1.5 V ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 1.5 7.8 nC 5.6 nC Qg (Typ , ID Symbol VDS VGS 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 N-Channel 12 ±8 - 4.5a - 4.5a - 4.5a, b, c - 3.7b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c Vishay Siliconix
Original
Abstract: ) = -30V ID = 4.5A ID = -4.5A (VGS = ±10V) RDS(ON) < 52mâ"¦ RDS(ON) < 68mâ"¦ (VGS = , ) On state drain current VGS=10V, VDS=5V 20 VGS=10V, ID=4.5A RDS(ON) Static Drain-Source On-Resistance TJ=125° C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward , (4.5V) Total Gate Charge 2.6 5 nC Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=4.5A , Time IF=4.5A, dI/dt=500A/Âus ns 3.5 ns 22 ns 3.5 Qrr Body Diode Reverse Alpha & Omega Semiconductor
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AON3613
Abstract: PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.029 at VGS = 4.5 V - 12 4.5a 4.5a - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 0.170 at VGS = - 1.5 V P-Channel 4.5a 0.061 at VGS = - 4.5 V 12 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V N-Channel 4.5a 0.034 at VGS = 2.5 V â'¢ Halogen-free According to IEC 61249-2-21 Definition â , Low On-Resistance â'¢ Compliant to RoHS Directive 2002/95/EC Qg (Typ.) - 4.5a 5.6 nC 8.2 Vishay Siliconix
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Abstract: ) = -30V ID = 4.5A ID = -4.5A (VGS = ±10V) RDS(ON) < 52mâ"¦ RDS(ON) < 68mâ"¦ (VGS = , ) On state drain current VGS=10V, VDS=5V 20 VGS=10V, ID=4.5A RDS(ON) Static Drain-Source On-Resistance TJ=125° C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward , Charge Qgd VGS=10V, VDS=15V, ID=4.5A Gate Drain Charge 0.5 nC 1 nC tD(on , Time trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=500A/Âus ns 3.5 ns 22 Alpha & Omega Semiconductor
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Abstract: '¢ â'¢ â'¢ â'¢ Vds=-55V Id=-4.5A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs , nA -2.5 V A Vgs=-10V, Id=-4.5A 60 80 mΩ Vgs=-4.5V, Id=-3.5A 90 150 mΩ Vds=-10V, Id=-4.5A Is=If, Vgs=0V 9 -1 S V Is -1.3 A Ism -2.6 A 1 Gfs , =1MHz tr Vgs=-10V, Vds=-27.5V Id=-4.5A Vgs=-10V, Vds=-20V td(off) Id=-1A, Rgen=6Ω pF 90 40 ELM Technology
Original
ELM34403AA-N P8006EVG SEP-30-2004

74592

Abstract: sia511dj s-71328 D1 S1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 Part # code 1 2 G1 3 D2 S2 FEATURES ID (A) 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a 5 nC 4.5 nC Qg (Typ) · TrenchFET® Power MOSFETs · New Thermally Enhanced , TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 4.3b, c - 3.4b, c - 10 - 4.5a - 1.6b, c 6.5 5
Vishay Siliconix
Original
74592 sia511dj s-71328 A511DJ A511DJ-T1-E3 S-71328-R

AAT8343

Abstract: AAT8343IDU-T1 size. · · · Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.5A @ 25 , Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA -20 VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = , Transconductance VDS = -5V, ID = -4.5A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 2.2, VGS , Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -4.5A Voltage1 IS Continuous , ) 0.24 VGS = 2.5V 0.16 0.08 ID = 4.5A 0.15 0.1 0.05 VGS = 4.5V 0 0 5 10 15
Advanced Analogic Technologies
Original
AAT8343 AAT8343IDU-T1

74592

Abstract: 74592 application notes PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.040 at VGS = 4.5 V - 12 4.5a 4.5a - 4.5a 0.100 at VGS = - 2.5 V - 4.5a 0.140 at VGS = - 1.8 V P-Channel 4.5 0.070 at VGS = - 4.5 V , 4.5a, b, c 4.5a, b, c 20 4.5a - 4.5a - 4.5a - 4.3b, c - 3.4b, c - 10 - 4.5a 1.6b, c 6.5 5 - 1.6b, c 6.5 5 1.9b, c 1.2b, c 1.9b, c 1.2b, c 4.5a TJ, Tstg Operating , 4.5a IDM Pulsed Drain Current N-Channel 12 - 55 to 150 260 Unit V A W °C
Vishay Siliconix
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74592 application notes 74592 datasheet S-80436-Rev SiA511DJ-T1-GE3 A511DJ-T1-GE3
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