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LT1025ACJ8 Linear Technology T.C. COLD JUNCTION COMPENSATOR visit Linear Technology - Now Part of Analog Devices
LT1025CN8#PBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1025ACN8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1025CN8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1025CS8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1025CS8#TRPBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

P channel Junction FET

Catalog Datasheet MFG & Type PDF Document Tags

FET J176

Abstract: P channel Junction FET Datasheet J1 J1 75 ronfVH â  J176 «ciiinii J1 77 Semiconductor Corp. P CHANNEL JUNCTION FET 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR J1Series types are Silicon P Channel Junction Field Effect Transistors designed for switching , Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature V 'gd gs g TJ'TSTG
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P-Channel Depletion Mosfets

Abstract: shockley diode complete depletion of the channel under these conditions. Depletion Layer P G 3b) N-Channel FET , form a semiconductor junction on the channel of a FET to achieve gate control of the channel current , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Channel N-Drain S D P N Depletion Layer P N-Channel P-Gate G Final form taken by FET with n-type channel embedded in p-type substrate. Figure 2. Idealized Structure of An
Siliconix
Original

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet Channel NDrain S D P N Depletion Layer P NChannel PGate Final form taken by FET with ntype channel embedded in ptype substrate. Figure 2. Idealized Structure of An NChannel Junction FET G 3a) NChannel FET Working in the Ohmic Region (VGS = 0 V) (Depletion Shown Only in Channel , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , . FET Family Tree (07/11/94) 1 AN101 Siliconix In addition to the channel material, a JFET
Temic Semiconductors
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P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs n channel depletion MOSFET

p channel depletion mosfet

Abstract: list of n channel fet which the maximum IDSS flows. VDS < VP Channel S N-Source D P N N-Drain Depletion Layer P G N-Channel P-Gate Final form taken by FET with n-type channel embedded in p-type , to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , Figure 1. FET Family Tree Siliconix 11-Jul1­94 1 AN101 In addition to the channel material, a
Temic Semiconductors
Original
list of n channel fet shockley diode Depletion MOSFET 6D list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets which the maximum IDSS flows. VDS < VP N-Source N-Drain Channel S D P N Depletion Layer N-Channel P P-Gate Final form taken by FET with n-type channel embedded in p-type substrate. Figure 2. Idealized Structure of An N-Channel Junction FET G 3a) N-Channel FET Working , junction formed along the channel. Implicit in this description is the fundamental difference between JFET , conditions. N Depletion Layer P G 3b) N-Channel FET Working in the Current Saturation Region
Temic Semiconductors
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P-Channel Depletion mosFET Siliconix JFET application note shockley depletion n channel mosfet diode shockley N-Channel depletion mos

2N3797

Abstract: MPF102 equivalent transistor TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with , oxide layer serves as a protective coating for the FET surface and to insulate the channel from the , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates only in the enhancement
Motorola
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2N3797 MPF102 equivalent transistor mpf102 fet MPF102 JFET 2N3797 equivalent 2N4221 motorola AN211A/D AN211A

AN211A

Abstract: MPF102 JFET P-CHANNEL MOSFET ID N MOS FIELD-EFFECT TRANSISTORS (MOSFET) P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE N P (SUBSTRATE) (a) OXIDE , JFET SOURCE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) P P SOURCE N DRAIN N , + ­­­­­­­­­ N+ N+ INDUCED CHANNEL P (SUBSTRATE) Figure 5. Channel Enhancement , . Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the
Motorola
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MPF102 Transistor MPF102 JFET data sheet mpf102 equivalent P channel depletion mode fet JFET TRANSISTOR REPLACEMENT GUIDE mpf102 equivalent

MPF102 JFET

Abstract: motorola AN211A current in the 2 GATE P (SUBSTRATE) P L CHANNEL CHANNEL LENGTH Figure 3. Junction FET with Single-Ended Geometry SOURCE DRAIN N N P (SUBSTRATE) P (SUBSTRATE) (a , - N+ INDUCED CHANNEL N+ Freescale Semiconductor, Inc. P (SUBSTRATE) Figure 5 , large gate voltages. Notice that for the junction FET, drain current may be enhanced by forward gate voltage only until the gate-source p-n junction becomes forward biased. The third type of FET operates
Motorola
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motorola AN211A 2N4221 MOTOROLA POWER TRANSISTOR MPF102 circuit application JFET with Yos 2N4351 MOTOROLA igfet

MPF102 equivalent transistor

Abstract: MPF102 JFET into the channel until they meet, È È È È È È N (a) (-) P P N DRAIN SOURCE ÈÇÇÈ ÇÇÇ ÇÇÇ È , ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË ËËËËËËËË ËËËË P P (SUBSTRATE) ID N P L CHANNEL LENGTH MOS , for the FET surface and to insulate the channel from the gate. However, the oxide is subject to , connected back to back. Figure 3. Junction FET with Single-Ended Geometry http://onsemi.com 2 , reversing the material types. SOURCE GATE (+) ALUMINUM + + + -INDUCED CHANNEL P
ON Semiconductor
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2N4351 mpf102 application note 2N5458 equivalent transistor mpf102 equivalent to MPF102 Transistors MPF102 n-channel

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion-Mode channel region). iâ'"111â'" S 0 p I- (BÃ N-channel FET working in saturation retion (Vqs = , necessary to form a semiconductor junction on the channel of a FET in order to achieve gate control of the , incorporated 6-10 Junction FET Capacitances Associated with the junction between the gate and the channel of a , a reverse-biased PN junction formed along the channel. Implicit in this description is the fundamental difference between FET and bipolar devices: when the FET junction is reverse-biased the gate
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P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606

fet third quadrant operation

Abstract: fet vcr compatible voltage divider attenuator.*^) (al N-channel FET Circuit Arrangement for Both an N and P Channel FET , across the junction (VGg, VGp) controls the channel conductance. Under the condition that the FET is , (on)> occurs at VGS = 0 and is dictated by the geometry of the FET. A device with a channel of small , between two of the terminals is controlled by a voltage potential applied to the third. A junction , conductance in the channel between the source and the drain is modulated by a transverse electric field. The
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fet third quadrant operation fet vcr compatible jfet transistor for VCR siliconix FET AUDIO AMPLIFIER 647 "photomultiplier" n-channel jfet amplitude control AU-13

pnp transistor 800v

Abstract: Figure 8, after the MOS FET channel is opened, a hole (m inority carrier) is driven in from the P+ chip , '+- P +. Thus all m anufacturing steps are the same for the MOS FET and the IGBT w ith the exception o f , MOS FET chip base 91 the IGBT is finally enabled. To disable the IGBT, the channel is closed , current o f the MOS FET. R n - cmod ) is conductivity m odulated N~ layer resistance. R ch is the channel resistance o f the MOS FET. And, if the PNP transistor's collector current is defined as I c ip n p ) , and
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pnp transistor 800v

MOSFET LOSSES SYNC BUCK

Abstract: FET DATA BOOK maximize the channel density was not sufficient to reduce the sync FET power losses. The reason for this , trench MOSFET technology, the power losses associated with the FET's in a Synchronous Buck (sync buck , ], Pon = I2rms x Rdson (1) Psw Vin x (Qgd + Qgs2) x fs x Iout/Ig (2) Pgd Qg x V g x fs P(Qoss) 1/2 x (V in x Qoss x fs) P(Qrr) = Vin x Qrr x fs (3) (4) (5) Note that Equation 2 does not apply to the sync FET as it undergoes zero voltage switching and Equation 5 does not apply to
International Rectifier
Original
MOSFET LOSSES SYNC BUCK FET DATA BOOK fet nc IC MOSFET QG IRF7811 IRF7811W IRF7811W/IRF7822 IRF7811/IRF7809
Abstract: INTEGRATED CIRCUIT TPD7000F 4-CHANNEL LOW -SIDE POW ER M O S FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-channel driver with a built-in circuit is used to monitor the voltage between the MOS FET drain and source for each channel and to output the state of the power MOS FET. FEATURES â'¢ Low-side N-channel power MOS FET driver (input capacitance: 15nF Max). â'¢ Incorporates a power MOS FET overcurrent protection function. â'¢ Incorporates induction load energy -
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961001EBA2 SSOP24-P-300-1

TPD7000F

Abstract: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TPD7000F 4-CHANNEL LOW-SIDE POWER MOS FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-charmel driver with a built-in circuit is used to monitor the voltage between the MOS FET drain and source for each channel and to output the state of the power MOS FET. FEATURES · Low-side N-channel power MOS FET driver (input capacitance: 15nF Max). · Incorporates a power MOS FET overcurrent protection function. · Incorporates induction load
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Diode DII

Abstract: 2SK299 FET channel current overrides the PN junction leakage current. Junction Temperature Tj (°C , should be noted. (5) Channel dissipation Pch or P D Allowable channel dissipation is the drain loss , transistor's Tj, the allowable channel temperature is the upper limit junction temperature value, which , I in relation to ID. P channel MOS FETs also have similar characteristics. P channel and N channel , Channel dissipation Pch Also, these items express rating values which cannot be exceeded no matter what
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Diode DII 2SK299 2SK2265 2SJ68 2sk135 application note 2SK1058

E1326A

Abstract: E1351-66201 PDFINFO H5 7 6 7 - 0 1 16-Channel T/C FET Multiplexer HP E1353A Technical Specifications , scan list Built-in thermistor reference junction Temperature, voltage, current, and Ohm readings 16 channel 3-wire, or 8-channel 4-wire multiplexer Description The HP E1353A FET multiplexer is a B-size , 16-Channel T/C FET Multiplexer Service Manual 3 Yr. Retn. to HP to 1 Yr. OnSite Warr. Terminal , temperature measurements. The FET multiplexer module consists of a B-size component card (labeled E1351
Hewlett-Packard
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E1351-66201 E1326A E1403 E1326B E1411B E1351A E1352A E1357A

2n4391, Voltage controlled

Abstract: sw 2n4093 most important considerations in selectin g a FET for use as a switch: 1. (R e ) 2N4391 thru 2N4393 G eneral Purpose 2N 4856 thru 2N4861 FET PARAMETERS AND THEIR RELATION TO APPLICATIONS OF VARIOUS TYPES. 2N3824 2N 4417-2N4416 U 310 2N 5396-2N5397 "P " CHANNEL 2N 2606 thru 2N2609 2N5114 thru 2N5116 , voltage is applied at the Drain of the FET. (Vos = O junction FET) (V «(TH ) M OS FET). This param eter is , the G ate in relation to the Source to turn the FET off. (junction FET). This is similar to the Pull
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2N5906 2n4391, Voltage controlled sw 2n4093 SDF1001 2N4093 2N5S92 2N4119 2NS432

BD9240

Abstract: bd9240f 12 13 14 VREF DUTY1 DUTY2 STB FUNCTION PIN No. Power Ground for FET drivers NMOS FET driver (Channel 2 side) NMOS FET driver (Channel 2 side) Input of Under Voltage Lock Out CT , Protection NMOS FET driver (Channel 1 side) NMOS FET driver (Channel 1 side) 4/4 NOTE FOR USE This , between the various pins. A P-N junction is formed from this P layer of each pin. For example, the , Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation *1
ROHM
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BD9240 bd9240f dc-ac inverter Controller PWM SSOP-B28 BD9240FV BD9240F 25VCC R0039A

high power FET transistor s-parameters

Abstract: ATP-1054 diode junction. III. How Does the FET Work? Gain in an FET is proportional to the channel conductivity (the "channel" being that area within the epi material under the gate). In a depletion mode FET , with a diode gate structure (similar to a junction FET, but a surface device) made from gallium , inversely proportional to its gate length. Gate width The size of the GaAs FET channel that carries , ­ The measured or estimated temperature of the GaAs FET channel under operating conditions. Tstg
Agilent Technologies
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ATP-1054 high power FET transistor s-parameters bipolar transistor ghz s-parameter high frequency transistor ga as fet RF Transistor s-parameter NF50 5963-2025E 5966-0779E
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