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Part : OSRAM-SAMPLES Supplier : OSRAM Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 100Q/CL/DC/64475/OSRAM 120V Supplier : OSRAM SYLVANIA Manufacturer : Newark element14 Stock : - Best Price : $38.99 Price Each : $49.02
Part : FP14/HE/SLS/830[OSRAM] Supplier : OSRAM SYLVANIA Manufacturer : Newark element14 Stock : - Best Price : $76.75 Price Each : $88.42
Part : FP28/HE/SLS/830[OSRAM] Supplier : OSRAM SYLVANIA Manufacturer : Newark element14 Stock : - Best Price : $94.07 Price Each : $116.55
Part : FP28/HE/SLS/840[OSRAM] Supplier : OSRAM SYLVANIA Manufacturer : Newark element14 Stock : - Best Price : $94.07 Price Each : $116.55
Part : FP39/840/HO/SLS/ECO[OSRAM] Supplier : OSRAM SYLVANIA Manufacturer : Newark element14 Stock : - Best Price : $66.28 Price Each : $76.36
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OSRAM IR emitter

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ® Most wanted for backlighting Applications! The customers' partner of choice OSRAM OS LED Rainer Schmitt Illumination in white OSRAM LED.ppt 18-Feb-02 Opto Semiconductors Top-Emitting LED LW , (white) · viewing angle: Lambertian Emitter (120°) · grouping parameter: luminous intensity, color coordinates · assembly methods: suitable for all SMT assembly methods · soldering methods: IR reflow soldering , angle: Lambertian Emitter (120°) · grouping parameter: luminous intensity, color coordinates · assembly OSRAM
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LED 40000 mcd white Y87C 17X0 SMT IR LED Y87C-R2S1-1 Y87C-S2T2-1 Q62703-Q6393 Q62703-Q6394 Y87S-NQ-1 Q62703Q6139
Abstract: 5 Collector 4 Emitter NC 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45 , Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors , Maximum Ratings TA=25°C Emitter Reverse Voltage , . 7.0 mm Isolation Thickness between Emitter and Detector . 0.4 mm , ) . 260°C 4N25/26/27/28-Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit Infineon Technologies
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H11A1 H11A2 H11A3 optocoupler mct2e opto coupler mct2e opto coupler 4n35 4n35 optocoupler MCT2E Opto Coupler optocoupler MCT2E IC H11A4 H11A5 MCT270
Abstract: =25°C (except where noted) Description Emitter (IR GaAs) Forward Voltage Reverse Current Capacitance Thermal , emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a , 15 Emitter 14 Collector 13 Emitter 12 Collector 11 Emitter 10 Collector 9 Emitter 0.19 (4.83) 0.17 , noted) Emitter Reverse Voltage , Test Voltage between Emitter and Detector (1.0 s Infineon Technologies
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SFH6916 1-888-I
Abstract: IF=0, VO (open), VCC=15 V, TA=25°C - - 50 IF=0, VO (open), VCC=15 V Emitter (IR , · GaAlAs Emitter · Integrated Detector with Photodiode and Transistor · High Data Transmission , 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) 5 Emitter , Emitter (GaAlAs) Reverse Voltage , . 100 mW Package Insulation Isolation Test Voltage between emitter and detector (refer to climate Infineon Technologies
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SFH636 6N136 SFH6136 opto igbt E52744
Abstract: Base Collector Emitter .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .048 , GaAs LED emitter which is optically coupled with a silicon planar phototransistor detector. The , exceed the maximum permissible insulating voltage. Maximum Ratings Emitter Reverse Voltage , .150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046 , Emitter & Detector . 0.4 mm Comparative Tracking Index Infineon Technologies
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SFH600-0 SFH600-1 SFH600-2 SFH600-3 SFH600
Abstract: DESCRIPTION 2 LEDC LED Cathode The IRM1000 is an IR emitter/detector pair packaged in a surface , IRM1000 SIDE VIEW Infrared Emitter/Detector Preliminary Dimensions in inches (mm) C .116 , Emitter Switch Time, 10% to 90% and 90% to 10% tr, tf Detector VF @ 10 ÂuA VF 0.4 â'" 1.0 V â'" Breakdown Voltage VBR 30 55 â'" V IR=1.2 ÂuA Receiver Sensitivity , '¢ Optoelectronics Division â'¢ San Jose, CA www.infineon.com/opto â'¢ 1-888-Infineon (1-888-463-4636) OSRAM Opto Infineon Technologies
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1000YYWW
Abstract: =25°C) Parameter Symbol Value Unit Condition Emitter (IR GaAs) Forward Voltage VF 1.25(1.65 , a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar , 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14 , ) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage , Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 Infineon Technologies
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Transistor BC 648 transistor BC 584 bc 303 transistor transistor BC 102 transistor BC 56 opto 101 SFH615AA/AGB/AGR/ABM/ SFH615XXX SFH615AA/AGB/AGR/ABM/ABL/AY/AB/BC
Abstract: one ID Anode 1 Cathode 2 NC 3 .300 (7.62) typ. 6 5 4 Base Collector Emitter .335 (8.50 , emitter which is optically coupled with a silicon planar phototransistor detector. The component is , isolated circuits. Maximum Ratings Emitter Reverse Voltage .6.0 , .150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2 , Emitter and Detector . 0.4 mm Comparative Tracking Index per Infineon Technologies
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SFH601-1 SFH601-2 SFH601-3 SFH601-4 SFH601
Abstract: 0.32, y = 0.31 acc. to CIE 1931 (white) â'¢ viewing angle: Lambertian Emitter (120°) â'¢ grouping , methods â'¢ soldering methods: IR reflow soldering and TTW soldering â'¢ preconditioning: acc. to JEDEC , ) â'¢ viewing angle: Lambertian Emitter (120°) â'¢ grouping parameter: luminous intensity, color coordinates â'¢ assembly methods: suitable for all SMT assembly methods â'¢ soldering methods: IR reflow , Region The customers' partner of choice OSRAM OS LED Rainer Schmitt Illumination in white OSRAM OSRAM
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M47C-R1S1-1 M47C-S1T2-1 M47S-N2P2-35 M47S-P2R1-35 M67C-R1S1-1 M67C-S1T2-1
Abstract: CC 0.6 pF - Emitter IR = 10 mA Detector Package 2000 Infineon Technologies , modulation. Maximum Ratings (TA=25°C) Emitter Reverse Voltage , Voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74) (t=1 sec , . 7.0 mm Isolation Thickness between Emitter and Detector. 0.4 mm , NC 3 4 Emitter 6 .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (1.22) .022 (0.55 Infineon Technologies
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CNY17 CNY17-1 CNY17-2 CNY17-3 CNY17-4 B550 transistor trios cny17-3 transistor fall time DSA00484002
Abstract: Emitter (IR GaAs) Reverse Current IR 0.01(10) uA VR=6.0 V Capacitance C0 13 pF , capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is , 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27 , (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage , Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74, t=1.0 s Infineon Technologies
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SFH615A SFH615A-1 SFH615A-2 SFH615A-3 SFH615A-4 SFH615A-12
Abstract: Condition Emitter (IR GaAs) Forward Voltage VF 1.25 (1.65) V IF=60 mA Reverse Current , Optoelectronics Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg, Germany www.osram-os.com · +49-941-202-7178 4 Emitter 3 , voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a , 2 4 Collector 3 Emitter Maximum Ratings Emitter Reverse Voltage Infineon Technologies
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SFH610A 617A-4 617A 617A-2 SFH617A SFH61XA SFH610A/617A SFH610A/617A-1 SFH610A/617A-2 SFH610A/617A-3 SFH610A/617A-4
Abstract: mounting (SMT) Compact housing out of black LCP GaAs infrared emitter (940 nm) Silicon phototransistor , accuracy (slit width: 0.5 mm) Wide gap between emitter and detector (5 mm) Mit Positionspin Geeignet , mW Wärmewiderstand Thermal resistance RthJA 280 K/W Sender (GaAs-Diode) Emitter , Reverse current VR = 5 V IR 0.01 ( 1) uA Kapazität Capacitance VR = 0 V, f = 1 MHz C0 , Dunkelstrom, VCE = 20 V Dark current ICEO 2 ( 50) nA Sender (GaAs-Diode) Emitter (GaAs Diode OSRAM
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Q62702-P5066 ipc 9501 OHFY1950 OHLY0597
Abstract: ID Anode 1 Cathode 2 NC 3 .300 (7.62) typ. 6 5 4 Base Collector Emitter .335 (8.50) .343 , Emitter (each channel) Peak Reverse Voltage.3.0 V Continuous Forward , 8 3 2 1 Anode 1 8 Emitter 7 Collector 6 Collector 5 Emitter Cathode 2 Cathode 3 Anode 4 .379 , 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 Emitter Cathode 2 Cathode 3 Anode 4 Anode 5 Cathode 6 Infineon Technologies
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IL30/31/55 ILD30/31/55 ILQ30/31/55 IL/ILD/ILQ30/55 IL/ILD/ILQ31 MCA230/MCA231/
Abstract: 2007-05-23 Ambient Light and Proximity Sensor with Integrated IR Emitter Umgebungslicht- und Proximity Sensor mit integriertem IR Emitter Version alpha.1 SFH 7776 Features: â'¢ Proximity sensor (PS) - Detection range up to 160 mm - 850 nm IR emitter integrated in package - Programmable pulse , without ink and a two separate IR transmissive openings for emitter and detector OHF05609 1.2 > 1 , 7776 Radiation Characteristics of the IR Emitter Irel f(f) 40˚ 30˚ 20˚ 10˚ Ï OSRAM
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D-93055
Abstract: , Available with Option 1 D E Maximum Ratings TA=25°C Emitter Reverse Voltage , . 150 mW Package Isolation Test Voltage (between emitter and detector referred to standard , between Emitter and Detector . 0.4 mm Comparative Tracking , Cathode 2 4 5 6 .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. 4 Emitter , Condition Forward Voltage VF 1.25 (1.65) V IF=60 mA Breakdown Voltage VBR 6.0 IR Infineon Technologies
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CNY17F CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4
Abstract: 2007-05-23 Ambient Light and Proximity Sensor with Integrated 940nm IR Emitter Umgebungslicht- und Proximity Sensor mit integriertem 940nm IR Emitter Version 0.1 SFH 7779 Features: â'¢ Proximity sensor (PS) - Detection range up to 160 mm - 940 nm IR emitter integrated in package - , IR Emitter Irel f(f) 40˚ 30˚ 20˚ 10˚ ϕ 0˚ OHF05605 1.0 50˚ 0.8 , Detektionsbereich bis zu 160mm - 940 nm Emitter, im Gehäuse integriert - Programmierbarer Pulsstrom bis 200 mA - OSRAM
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Abstract: ) Base (VB) Collector (VO) Emitter (GND) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 , allowed to exceed the maximum permissible reference voltages. Maximum Ratings Emitter Reverse Voltage , ) .100 mW Package Isolation Test Voltage (between emitter and detector climate per DIN 50014, part 2, Nov , ) Characteristics TA=0 to 70°C unless otherwise specified, TA=25°C typ. Emitter Forward Voltage Breakdown Voltage , 6N136 Symbol Value 1.6 (1.9) 5.0 0.5 (10) 125 ­1.7 Unit V Condition VF VBR IR CO VF /TA Infineon Technologies
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optocoupler ic 6N136 6N135 6N135/136
Abstract: (VO) Emitter (GND) .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) 10° .020 (.51 , ) .110 (2.79) .250(6.35) .130 (3.30) Maximum Ratings Emitter Reverse Voltage , www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg , VCM Emitter Forward Voltage VF 1.6 (1.9) V IF=16 mA Breakdown Voltage VBR 3.0 V IR=10 uA Reverse Current IR 0.5 (10) uA VR=3.0 V Capacitance CO 125 Infineon Technologies
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SFH6135 SFH6135/6136
Abstract: out of black LCP GaAs infrared emitter (940 nm) Silicon phototransistor detector with , mm) Wide gap between emitter and detector (5 mm) Mit Positionspin Geeignet für ,pick and place , mW Wärmewiderstand Thermal resistance RthJA 280 K/W Sender (GaAs-Diode) Emitter , IR 0.01 ( 1) uA Kapazität Capacitance VR = 0 V, f = 1 MHz C0 16 pF Wellenlänge , current ICEO 2 ( 50) nA Sender (GaAs-Diode) Emitter (GaAs Diode) Empfänger OSRAM
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Q65110A5066 Fototransistor fototransistor led J-STD-020B OHLA0687 D-93049
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