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OSRAM-SAMPLES OSRAM High Power LEDs (Alt: OSRAM-SAMPLES) (Sep 2016) Avnet Buy

OSRAM IR emitter

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ® Most wanted for backlighting Applications! The customers' partner of choice OSRAM OS LED Rainer Schmitt Illumination in white OSRAM LED.ppt 18-Feb-02 Opto Semiconductors Top-Emitting LED LW , (white) · viewing angle: Lambertian Emitter (120°) · grouping parameter: luminous intensity, color coordinates · assembly methods: suitable for all SMT assembly methods · soldering methods: IR reflow soldering , angle: Lambertian Emitter (120°) · grouping parameter: luminous intensity, color coordinates · assembly ... OSRAM
Original
datasheet

4 pages,
102.68 Kb

SMT IR LED OSRAM IR emitter 17X0 Y87C LED 40000 mcd white TEXT
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Abstract: 5 Collector 4 Emitter NC 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45 , Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors , Maximum Ratings TA=25°C Emitter Reverse Voltage , . 7.0 mm Isolation Thickness between Emitter and Detector . 0.4 mm , ) . 260°C 4N25/26/27/28-Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit ... Infineon Technologies
Original
datasheet

6 pages,
219.98 Kb

4N27 4N28 4N28 opto 4N35 4N35 QUALITY TECHNOLOGIES 4N36 4N37 4N38 H11A1 H11A2 optocoupler 4N25 opto 4n25 H11A3 MCT2E optocoupler MCT2E IC MCT2E Opto Coupler 4n35 optocoupler opto coupler 4n35 opto coupler mct2e optocoupler mct2e TEXT
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Abstract: =25°C (except where noted) Description Emitter (IR GaAs) Forward Voltage Reverse Current Capacitance Thermal , emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a , 15 Emitter 14 Collector 13 Emitter 12 Collector 11 Emitter 10 Collector 9 Emitter 0.19 (4.83) 0.17 , noted) Emitter Reverse Voltage , Test Voltage between Emitter and Detector (1.0 s ... Infineon Technologies
Original
datasheet

4 pages,
180.56 Kb

SFH6916 TEXT
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Abstract: IF=0, VO (open), VCC=15 V, TA=25°C - - 50 IF=0, VO (open), VCC=15 V Emitter (IR , · GaAlAs Emitter · Integrated Detector with Photodiode and Transistor · High Data Transmission , 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) 5 Emitter , Emitter (GaAlAs) Reverse Voltage , . 100 mW Package Insulation Isolation Test Voltage between emitter and detector (refer to climate ... Infineon Technologies
Original
datasheet

5 pages,
200.55 Kb

SFH636 SFH6136 opto igbt 6N136 TEXT
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Abstract: Base Collector Emitter .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .048 , GaAs LED emitter which is optically coupled with a silicon planar phototransistor detector. The , exceed the maximum permissible insulating voltage. Maximum Ratings Emitter Reverse Voltage , .150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046 , Emitter & Detector . 0.4 mm Comparative Tracking Index ... Infineon Technologies
Original
datasheet

4 pages,
562.48 Kb

SFH600-0 SFH600-1 SFH600-2 SFH600-3 E52744 SFH600 TEXT
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Abstract: DESCRIPTION 2 LEDC LED Cathode The IRM1000 IRM1000 is an IR emitter/detector pair packaged in a surface , IRM1000 IRM1000 SIDE VIEW Infrared Emitter/Detector Preliminary Dimensions in inches (mm) C .116 , Emitter Switch Time, 10% to 90% and 90% to 10% tr, tf Detector VF @ 10 ÂuA VF 0.4 — 1.0 V — Breakdown Voltage VBR 30 55 — V IR=1.2 ÂuA Receiver Sensitivity , €¢ Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) OSRAM Opto ... Infineon Technologies
Original
datasheet

5 pages,
308.87 Kb

IRM1000 TEXT
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Abstract: =25°C) Parameter Symbol Value Unit Condition Emitter (IR GaAs) Forward Voltage VF 1.25(1.65 , a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar , 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14 , ) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage , Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ... Infineon Technologies
Original
datasheet

3 pages,
219.65 Kb

BC 584 transistor BC 110 Infrared emitter opto 101 transistor BC 56 transistor BC 102 bc 303 transistor OSRAM IR emitter Transistor BC 648 transistor BC 584 SFH615AA/AGB/AGR/ABM/ TEXT
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Abstract: one ID Anode 1 Cathode 2 NC 3 .300 (7.62) typ. 6 5 4 Base Collector Emitter .335 (8.50 , emitter which is optically coupled with a silicon planar phototransistor detector. The component is , isolated circuits. Maximum Ratings Emitter Reverse Voltage .6.0 , .150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2 , Emitter and Detector . 0.4 mm Comparative Tracking Index per ... Infineon Technologies
Original
datasheet

4 pages,
331.17 Kb

SFH601-1 SFH601-2 SFH601-3 SFH601-4 E52744 SFH601 TEXT
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Abstract: 0.32, y = 0.31 acc. to CIE 1931 (white) • viewing angle: Lambertian Emitter (120°) • grouping , methods • soldering methods: IR reflow soldering and TTW soldering • preconditioning: acc. to JEDEC , ) • viewing angle: Lambertian Emitter (120°) • grouping parameter: luminous intensity, color coordinates • assembly methods: suitable for all SMT assembly methods • soldering methods: IR reflow , Region The customers' partner of choice OSRAM OS LED Rainer Schmitt Illumination in white OSRAM ... OSRAM
Original
datasheet

1 pages,
148.18 Kb

TEXT
datasheet frame
Abstract: CC 0.6 pF - Emitter IR = 10 mA Detector Package 2000 Infineon Technologies , modulation. Maximum Ratings (TA=25°C) Emitter Reverse Voltage , Voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74) (t=1 sec , . 7.0 mm Isolation Thickness between Emitter and Detector. 0.4 mm , NC 3 4 Emitter 6 .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (1.22) .022 (0.55 ... Infineon Technologies
Original
datasheet

4 pages,
213.85 Kb

VDE0303 CNY17 CNY17-1 CNY17-2 CNY17-3 CNY17-4 OSRAM IR emitter transistor fall time trios cny17-3 B550 transistor TEXT
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