NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CC 0.6 pF - Emitter IR = 10 mA Detector Package 2000 Infineon Technologies , modulation. Maximum Ratings (TA=25°C) Emitter Reverse Voltage , Voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74) (t=1 sec , Distance. 7.0 mm Isolation Thickness between Emitter and Detector. 0.4 mm , NC 3 4 Emitter 6 .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (1.22) .022 (0.55 ... | Original |
4 pages, |
VDE0303 OSRAM IR emitter CNY17-4 CNY17-3 CNY17-2 CNY17-1 CNY17 B550 transistor E52744 CNY17-1 abstract |
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| Abstract: , Available with Option 1 D E Maximum Ratings TA=25°C Emitter Reverse Voltage , . 150 mW Package Isolation Test Voltage (between emitter and detector referred to standard , between Emitter and Detector . 0.4 mm Comparative Tracking , Cathode 2 4 5 6 .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. 4 Emitter , Voltage VF 1.25 (1.65) V IF=60 mA Breakdown Voltage VBR 6.0 IR=10 uA Reverse ... | Original |
4 pages, |
CNY17F-4 CNY17F-3 CNY17F-2 CNY17F-1 CNY17F CNY17 E52744 CNY17F abstract |
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| Abstract: consist of an IRLED optically coupled to two photodiodes. The emitter is located such that both , ) typ. 3°7° Absolute Maximum Ratings Emitter Sym. Min. Max. Units Reverse Voltage , 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg, Germany www.osram-os.com , Emitter Symbol Min. Typ. Max. Units Test Conditions Forward Voltage VF - 1.8 2.1 V IF=10 mA Reverse Current IR - .01 10 uA VR=3.0 V VF ... | Original |
3 pages, |
OSRAM OPTO SEMICONDUCTORS GMBH opto phase detector IL388DAA HIGH VOLTAGE OPTO COUPLER DM207 DL207 DAA2000 linear opto coupler IL388DAA abstract |
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| Abstract: Condition Emitter (IR GaAs) Forward Voltage VF 1.25 (1.65) V IF=60 mA Reverse Current , Optoelectronics Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg, Germany www.osram-os.com · +49-941-202-7178 4 Emitter 3 , voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a , 2 4 Collector 3 Emitter Maximum Ratings Emitter Reverse ... | Original |
3 pages, |
SFH61XA SFH617A SFH610A 617A-2 617A-4 SFH610A/617A-1 SFH610A/617A-2 SFH610A/617A-3 SFH610A/617A-4 SFH610A/617A SFH610A/617A-1 abstract |
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| Abstract: phototransistor detector in a plastic plug-in DIP 6 pin package. Maximum Ratings (TA=25°C) Emitter Reverse , . 150 mW Package Isolation Test Voltage between Emitter and Detector, Refer to Standard Climate , Thickness between Emitter and Detector . 0.4 mm Comparative Tracking , exceed the maximum permissible reference voltages. 2 .018 (0.45) .022 (0.55) 4 Emitter .300 , Condition Forward Voltage VF - 1.15 1.5 V IF=10 mA Reverse Leakage Current IR ... | Original |
2 pages, |
MOC8112 MOC8111 MOC8111/MOC8112 E52744 MOC8111/MOC8112 abstract |
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| Abstract: · GaAlAs Emitter · Integrated Detector with Photodiode and Transistor · High Data Transmission , 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) 5 Emitter , Emitter (GaAlAs) Reverse , 100 mW Package Insulation Isolation Test Voltage between emitter and detector (refer to climate , www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg ... | Original |
5 pages, |
SFH636 SFH6136 opto igbt 6N136 E52744 SFH636 abstract |
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| Abstract: (TA=25°C) Parameter Symbol Value Unit Condition Emitter (IR GaAs) Forward Voltage VF , a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar , 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14 , ) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage , Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ... | Original |
3 pages, |
Infrared emitter BC 584 transistor BC 56 transistor BC 102 bc 303 transistor transistor BC 584 OSRAM IR emitter SFH615AA/AGB/AGR/ABM/ SFH615AA/AGB/AGR/ABM/ abstract |
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| Abstract: Phase and IR Reflow Soldering · Underwriters Lab File #E52744 E52744 (Code Letter Y) Dimensions in inches , (.51±.10) 2 plcs. NC Base Collector Emitter 7° .058±.005 (1.49±.13) 40° .015±.002 , (3.18±.13) Lead Coplanarity ±.0015 (.04) max. Maximum Ratings, TA=25°C (except where noted) Emitter , www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg , V IF=10 mA Reverse Current IR - 0.1 100 uA VR=6.0 V Capacitance CO ... | Original |
4 pages, |
opto 3805 IL208AT IL207AT IL206AT IL205AT 207a IL205AT/206AT/207AT/208AT E52744 IL205AT/206AT/207AT/208AT abstract |
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| Abstract: V ICE=1.0 mA, RBE=1.0 M 200 - - - - Emitter IR=10 uA Detector , ) .343 (8.70) NC 3 4 Emitter Anode 4 .039 (1.00) Min. 4° typ. D E , ) Maximum Ratings TA=25°C Emitter Reverse , Package Isolation Test Voltage (between emitter and detector, refer to climate DIN 50014, part 2, Nov. 74) . 5300 VRMS Insulation Thickness between Emitter and Detector ... | Original |
3 pages, |
H11D3 H11D1/H11D2/H11D3/H11D4 H11D1/H11D2/H11D3/H11D4 abstract |
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| Abstract: 1 uA IF=0, VO (open), VCC=15 V, TA=25°C Emitter (IR GaAlAs) Detector (Si Photodiode + , Optocoupler without Base Connection · GaAlAs Emitter · Integrated Detector with Photodiode and Transistor , ) 5 Emitter .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56 , (2.79) .250(6.35) .130 (3.30) Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage , mW Package Insulation Isolation Test Voltage between emitter and detector ... | Original |
4 pages, |
SFH6345 HCPL4503 6N135 GaAlAs detector E52744 SFH6345 abstract |
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