OPA627 OPA637 OPA111 OPA627/637 SBOS165 PDS-998H OPA627BM OPA637BM OPA627AM - Datasheet Archive

 

OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS q VERY LOW NOISE:

 

® OPA627 OPA627 OPA637 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS q VERY LOW NOISE: 4.5nV/Hz at 10kHz q FAST SETTLING TIME: OPA627-550ns to 0.01% OPA637-450ns to 0.01% q PRECISION INSTRUMENTATION q FAST DATA ACQUISITION q DAC OUTPUT AMPLIFIER q OPTOELECTRONICS q LOW VOS: 100µV max q LOW DRIFT: 0.8µV/°C max q LOW IB: 5pA max q SONAR, ULTRASOUND q HIGH-IMPEDANCE SENSOR AMPS q HIGH-PERFORMANCE AUDIO CIRCUITRY q OPA627 OPA627: Unity-Gain Stable q OPA637 OPA637: Stable in Gain 5 q ACTIVE FILTERS High frequency complementary transistors allow increased circuit bandwidth, attaining dynamic performance not possible with previous precision FET op amps. The OPA627 OPA627 is unity-gain stable. The OPA637 OPA637 is stable in gains equal to or greater than five. DESCRIPTION The OPA627 OPA627 and OPA637 OPA637 Difet operational amplifiers provide a new level of performance in a precision FET op amp. When compared to the popular OPA111 OPA111 op amp, the OPA627/637 OPA627/637 has lower noise, lower offset voltage, and much higher speed. It is useful in a broad range of precision and high speed analog circuitry. Difet fabrication achieves extremely low input bias currents without compromising input voltage noise performance. Low input bias current is maintained over a wide input common-mode voltage range with unique cascode circuitry. The OPA627/637 OPA627/637 is fabricated on a high-speed, dielectrically-isolated complementary NPN/PNP process. It operates over a wide range of power supply voltage- ±4.5V to ±18V. Laser-trimmed Difet input circuitry provides high accuracy and low-noise performance comparable with the best bipolar-input op amps. Trim 1 The OPA627/637 OPA627/637 is available in plastic DIP, SOIC and metal TO-99 packages. Industrial and military temperature range models are available. 7 +VS Trim 5 Output 6 +In 3 ­In 2 ­VS 4 Difet ®, Burr-Brown Corp. International Airport Industrial Park · Mailing Address: PO Box 11400, Tucson, AZ 85734 · Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 · Tel: (520) 746-1111 · Twx: 910-952-1111 Internet: http://www.burr-brown.com/ · FAXLine: (800) 548-6133 (US/Canada Only) · Cable: BBRCORP · Telex: 066-6491 · FAX: (520) 889-1510 · Immediate Product Info: (800) 548-6132 ©1989 Burr-Brown Corporation SBOS165 SBOS165 PDS-998H PDS-998H Printed in U.S.A. March, 1998 SPECIFICATIONS ELECTRICAL At TA = +25°C, and VS = ±15V, unless otherwise noted. OPA627BM OPA627BM, BP, SM OPA637BM OPA637BM, BP, SM PARAMETER CONDITIONS OFFSET VOLTAGE (1) Input Offset Voltage AP, BP, AU Grades Average Drift AP, BP, AU Grades Power Supply Rejection MIN MAX 40 100 0.4 0.8 120 100 250 0.8 2 106 1 VS = ±4.5 to ±18V INPUT BIAS CURRENT (2) Input Bias Current Over Specified Temperature SM Grade Over Common-Mode Voltage Input Offset Current Over Specified Temperature SM Grade TYP 5 1 50 VCM = 0V VCM = 0V VCM = 0V VCM = ±10V VCM = 0V VCM = 0V 1 0.5 NOISE Input Voltage Noise Noise Density: f = 10Hz f = 100Hz f = 1kHz f = 10kHz Voltage Noise, BW = 0.1Hz to 10Hz Input Bias Current Noise Noise Density, f = 100Hz Current Noise, BW = 0.1Hz to 10Hz MAX UNITS 250 500 2 100 130 280 1.2 2.5 116 µV µV µV/°C µV/°C dB 2 10 2 pA nA nA pA pA nA nA 2 1 5 1 50 10 2 40 20 8 6 1.6 20 10 5.6 4.8 0.8 nV/Hz nV/Hz nV/Hz nV/Hz µVp-p 2.5 60 2.5 48 fA/Hz fAp-p * * || pF || pF 1013 || 8 1013 || 7 VCM = ±10.5V ±11 ±10.5 106 ±11.5 ±11 116 * * 100 * * 110 V V dB VO = ±10V, RL = 1k VO = ±10V, RL = 1k VO = ±10V, RL = 1k 112 106 100 120 117 114 106 100 116 110 dB dB dB 40 100 55 135 550 450 450 300 16 80 0.00003 * * * * * * * * * * * V/µs V/µs ns ns ns ns MHz MHz % G G G G G G = = = = = = ­1, 10V Step ­4, 10V Step ­1, 10V Step ­1, 10V Step ­4, 10V Step ­4, 10V Step G=1 G = 10 G = +1, f = 1kHz POWER SUPPLY Specified Operating Voltage Operating Voltage Range Current OUTPUT Voltage Output Over Specified Temperature Current Output Short-Circuit Current Output Impedance, Open-Loop TYP 1.6 30 INPUT VOLTAGE RANGE Common-Mode Input Range Over Specified Temperature Common-Mode Rejection FREQUENCY RESPONSE Slew Rate: OPA627 OPA627 OPA637 OPA637 Settling Time: OPA627 OPA627 0.01% 0.1% OPA637 OPA637 0.01% 0.1% Gain-Bandwidth Product: OPA627 OPA627 OPA637 OPA637 Total Harmonic Distortion + Noise MIN 15 8 5.2 4.5 0.6 INPUT IMPEDANCE Differential Common-Mode OPEN-LOOP GAIN Open-Loop Voltage Gain Over Specified Temperature SM Grade OPA627AM OPA627AM, AP, AU OPA637AM OPA637AM, AP, AU ±4.5 ±11.5 ±11 RL = 1k VO = ±10V ±35 1MHz TEMPERATURE RANGE Specification: AP, BP, AM, BM, AU SM Storage: AM, BM, SM AP, BP, AU J-A: AM, BM, SM AP, BP AU ±15 ±7 ±12.3 ±11.5 ±45 +70/­55 55 ±18 ±7.5 * * * * * * * * * * * * 200 100 160 * +85 +125 +150 +125 ­25 ­55 ­60 ­40 ±100 * * * * * * * * * V V mA V mA mA °C °C °C °C °C/W °C/W °C/W * Specifications same as "B" grade. NOTES: (1) Offset voltage measured fully warmed-up. (2) High-speed test at TJ = +25°C. See Typical Performance Curves for warmed-up performance. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. ® OPA627 OPA627, 637 2 PIN CONFIGURATIONS ABSOLUTE MAXIMUM RATINGS(1) Top View Supply Voltage . ±18V Input Voltage Range . +VS + 2V to ­VS ­ 2V Differential Input Range . Total VS + 4V Power Dissipation . 1000mW Operating Temperature M Package . ­55°C to +125°C P, U Package . ­40°C to +125°C Storage Temperature M Package . ­65°C to +150°C P, U Package . ­40°C to +125°C Junction Temperature M Package . +175°C P, U Package . +150°C Lead Temperature (soldering, 10s) . +300°C SOlC (soldering, 3s) . +260°C DIP/SOIC Offset Trim 1 8 No Internal Connection ­In 2 7 +VS +In 3 6 Output ­VS 4 5 Offset Trim NOTE: (1) Stresses above these ratings may cause permanent damage. Top View TO-99 No Internal Connection PACKAGE/ORDERING INFORMATION 8 +VS Offset Trim 1 ­In PRODUCT 2 6 3 +In 5 4 Offset Trim ­VS Case connected to ­VS. PACKAGE DRAWING NUMBER(1) TEMPERATURE RANGE Plastic DIP Plastic DIP SOIC TO-99 Metal TO-99 Metal TO-99 Metal 006 006 182 001 001 001 ­25°C to +85°C ­25°C to +85°C ­25°C to +85°C ­25°C to +85°C ­25°C to +85°C ­55°C to +125°C OPA637AP OPA637AP OPA637BP OPA637BP OPA637AU OPA637AU OPA637AM OPA637AM OPA637BM OPA637BM OPA637SM OPA637SM Output PACKAGE OPA627AP OPA627AP OPA627BP OPA627BP OPA627AU OPA627AU OPA627AM OPA627AM OPA627BM OPA627BM OPA627SM OPA627SM 7 Plastic DIP Plastic DIP SOIC TO-99 Metal TO-99 Metal TO-99 Metal 006 006 182 001 001 001 ­25°C to +85°C ­25°C to +85°C ­25°C to +85°C ­25°C to +85°C ­25°C to +85°C ­55°C to +125°C NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ® 3 OPA627 OPA627, 637 TYPICAL PERFORMANCE CURVES At TA = +25°C, and VS = ±15V, unless otherwise noted. TOTAL INPUT VOLTAGE NOISE vs BANDWIDTH INPUT VOLTAGE NOISE SPECTRAL DENSITY 100 Input Voltage Noise (µV) 100 10 10 1 0.1 RMS 0.01 1 1 10 100 1k 10k 100k 1M 1 10M 10 100 VOLTAGE NOISE vs SOURCE RESISTANCE 10k 100k 1M 10M OPEN-LOOP GAIN vs FREQUENCY 1k 140 ­ 120 + Voltage Gain (dB) Voltage Noise (nV/ Hz) 1k Bandwidth (Hz) Frequency (Hz) RS 100 Comparison with OPA27 OPA27 Bipolar Op Amp + Resistor OPA627 OPA627 + Resistor 10 OPA637 OPA637 100 80 60 40 OPA627 OPA627 20 Spot Noise at 10kHz Resistor Noise Only 0 ­20 1 1k 100 10k 100k 1M 10M 100M 1 Source Resistance ( ) 10 100 1k 10k 100k 1M 10M 100M Frequency (Hz) OPA627 OPA627 GAIN/PHASE vs FREQUENCY OPA637 OPA637 GAIN/PHASE vs FREQUENCY 30 20 ­120 Phase ­150 Gain 0 Gain (dB) 75° Phase Margin ­90 ­120 10 30 Phase (Degrees) ­90 20 Gain (dB) p-p Noise Bandwidth: 0.1Hz to indicated frequency. Phase ­180 ­10 10 1 ­210 100 ­150 0 ­10 ­180 ­210 1 10 Frequency (MHz) Frequency (MHz) ® OPA627 OPA627, 637 Gain 10 4 100 Phase (Degrees) Voltage Noise (nV/ Hz) 1k TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, and VS = ±15V, unless otherwise noted. OPEN-LOOP GAIN vs TEMPERATURE OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY 125 Output Resistance () 100 Voltage Gain (dB) 120 115 110 80 60 40 20 105 ­75 0 ­50 ­25 0 25 50 75 100 2 125 20 200 2k 20k 200k Temperature (°C) COMMON-MODE REJECTION vs FREQUENCY 130 120 Common-Mode Rejection (dB) Common-Mode Rejection Ratio (dB) 20M COMMON-MODE REJECTION vs INPUT COMMON MODE VOLTAGE 140 OPA637 OPA637 100 80 OPA627 OPA627 60 40 20 1 10 100 1k 10k 100k 1M 120 110 100 90 80 ­15 0 10M ­10 ­5 0 5 10 15 Common-Mode Voltage (V) Frequency (Hz) POWER-SUPPLY REJECTION AND COMMON-MODE REJECTION vs TEMPERATURE POWER-SUPPLY REJECTION vs FREQUENCY 125 140 120 PSR CMR and PSR (dB) Power-Supply Rejection (dB) 2M Frequency (Hz) 100 ­VS PSRR 627 and 637 80 60 +VS PSRR 627 637 40 120 CMR 115 110 20 105 0 1 10 100 1k 10k 100k 1M ­75 10M Frequency (Hz) ­50 ­25 0 25 50 75 100 125 Temperature (°C) ® 5 OPA627 OPA627, 637 TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, and VS = ±15V, unless otherwise noted. SUPPLY CURRENT vs TEMPERATURE OUTPUT CURRENT LIMIT vs TEMPERATURE 100 8 +IL at VO = 0V Output Current (mA) Supply Current (mA) 80 7.5 7 6.5 +IL at VO = +10V 60 40 ­IL at VO = 0V 20 ­IL at VO = ­10V 0 6 ­75 ­50 ­25 0 25 50 75 100 ­75 125 ­50 ­25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) OPA637 OPA637 GAIN-BANDWIDTH AND SLEW RATE vs TEMPERATURE OPA627 OPA627 GAIN-BANDWIDTH AND SLEW RATE vs TEMPERATURE 160 120 60 24 Slew Rate 16 55 GBW 12 8 ­75 ­25 0 25 50 75 100 140 80 120 GBW 100 60 80 40 50 ­50 100 ­50 ­75 125 ­25 OPA627 OPA627 TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY G = +1 VI ­ 600 1 VO = ±10V + ­ 100pF 5k 600 G = +10 VI 0.1 549 VO = ±10V 5k 600 VI Measurement BW: 80kHz G = +10 0.0001 + ­ 100pF 549 0.001 75 100 125 G = +50 + ­ 100pF THD+N (%) THD+N (%) 0.01 VI 50 OPA637 OPA637 TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY G = +10 VO = ±10V + 25 Temperature (°C) Temperature (°C) 0.1 0 VO = ±10V 5k 600 100pF 102 0.01 G = +50 Measurement BW: 80kHz 0.001 G = +1 0.00001 G = +10 0.0001 20 100 1k 10k 20k 20 Frequency (Hz) 1k Frequency (Hz) ® OPA627 OPA627, 637 100 6 10k 20k Slew Rate (V/µs) Gain-Bandwidth (MHz) 20 Slew Rate (V/µs) Gain-Bandwidth (MHz) Slew Rate TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, and VS = ±15V, unless otherwise noted. INPUT BIAS CURRENT vs POWER SUPPLY VOLTAGE INPUT BIAS AND OFFSET CURRENT vs JUNCTION TEMPERATURE 20 10k 100 Input Bias Current (pA) Input Current (pA) 1k IB 10 IOS 1 NOTE: Measured fully warmed-up. 15 TO-99 10 Plastic DIP, SOIC 5 TO-99 with 0807HS 0807HS Heat Sink 0 0.1 ­50 ­25 0 25 50 75 100 125 150 ±4 ±6 INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE ±12 ±14 ±16 ±18 INPUT OFFSET VOLTAGE WARM-UP vs TIME 1.2 50 Beyond Linear Common-Mode Range 1.1 Offset Voltage Change (µV) Input Bias Current Multiplier ±10 Supply Voltage (±VS) Junction Temperature (°C) 1 0.9 Beyond Linear Common-Mode Range 0.8 25 0 ­25 ­50 ­15 ­10 ­5 0 5 Common-Mode Voltage (V) 10 15 0 1 2 3 4 5 6 Time From Power Turn-On (Min) SETTLING TIME vs CLOSED-LOOP GAIN MAX OUTPUT VOLTAGE vs FREQUENCY 100 30 Error Band: ±0.01% Settling Time (µs) Output Voltage (Vp-p) ±8 20 OPA637 OPA637 10 10 OPA627 OPA627 1 OPA637 OPA637 OPA627 OPA627 0.1 0 100k 1M 10M 100M ­1 Frequency (Hz) ­10 ­100 ­1000 Closed-Loop Gain (V/V) ® 7 OPA627 OPA627, 637 TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, and VS = ±15V, unless otherwise noted. SETTLING TIME vs ERROR BAND 1500 ­ 1000 + RF ­5V 2k OPA627 OPA627 RI 2k RF 2k CF 6pF OPA637 OPA637 500 2k 4pF Settling Time (µs) +5V RI Settling Time (ns) SETTLING TIME vs LOAD CAPACITANCE 3 CF OPA627 OPA627 G = ­1 500 OPA637 OPA637 G = ­4 Error Band: ±0.01% 2 OPA627 OPA627 G = ­1 1 OPA637 OPA637 G = ­4 0 0.001 0 0.01 0.1 1 10 0 150 Error Band (%) 200 300 400 500 Load Capacitance (pF) APPLICATIONS INFORMATION RF < 4RI The OPA627 OPA627 is unity-gain stable. The OPA637 OPA637 may be used to achieve higher speed and bandwidth in circuits with noise gain greater than five. Noise gain refers to the closed-loop gain of a circuit as if the non-inverting op amp input were being driven. For example, the OPA637 OPA637 may be used in a non-inverting amplifier with gain greater than five, or an inverting amplifier of gain greater than four. ­ + OPA627 OPA627 ­ OPA627 OPA627 + Buffer Non-Inverting Amp G 1 OUTPUT OVERLOAD When the inputs to the OPA627/637 OPA627/637 are overdriven, the output voltage of the OPA627/637 OPA627/637 smoothly limits at approximately 2.5V from the positive and negative power supplies. If driven to the negative swing limit, recovery CL 5nF OPA627 OPA627 R1 For Approximate Butterworth Response: 2 RO CL RF >> RO CF = RF f­3dB = 1 2 RF RO CF CL FIGURE 6. Driving Large Capacitive Loads. ® OPA627 OPA627, 637 Diode Bridge BB: PWS740-3 PWS740-3 5k Temperature rise in the plastic DIP and SOIC packages can be minimized by soldering the device to the circuit board. Wide copper traces will also help dissipate heat. The OPA627/637 OPA627/637 may also be operated at reduced power supply voltage to minimize power dissipation and temperature rise. Using ±5V power supplies reduces power dissipation to one-third of that at ±15V. This reduces the IB of TO99 metal package devices to approximately one-fourth the value at ±15V. 10 INPUT PROTECTION Sometimes input protection is required on I/V converters of inverting amplifiers (Figure 7b). Although in normal operation, the voltage at the summing junction will be near zero (equal to the offset voltage of the amplifier), large input transients may cause this node to exceed 2V beyond the power supplies. In this case, the summing junction should be protected with diode clamps connected to ground. Even with the low voltage present at the summing junction, common signal diodes may have excessive leakage current. Since the reverse voltage on these diodes is clamped, a diode-connected signal transistor can be used as an inexpensive low leakage diode (Figure 7b). The inputs of the OPA627/637 OPA627/637 are protected for voltages between +VS + 2V and ­VS ­ 2V. If the input voltage can exceed these limits, the amplifier should be protected. The diode clamps shown in Figure 7a will prevent the input voltage from exceeding one forward diode voltage drop beyond the power supplies-well within the safe limits. If the input source can deliver current in excess of the maximum forward current of the protection diodes, use a series resistor, RS, to limit the current. Be aware that adding resistance to the input will increase noise. The 4nV/Hz theoretical thermal noise of a 1k resistor will add to the 4.5nV/Hz noise of the OPA627/637 OPA627/637 (by the square-root of the sum of the squares), producing a total noise of 6nV/Hz. Resistors below 100 add negligible noise. +VS Leakage current in the protection diodes can increase the total input bias current of the circuit. The specified maximum leakage current for commonly used diodes such as the 1N4148 1N4148 is approximately 25nA-more than a thousand times larger than the input bias current of the OPA627/637 OPA627/637. Leakage current of these diodes is typically much lower and may be adequate in many applications. Light falling on the junction of the protection diodes can dramatically increase leakage current, so common glass-packaged diodes should be shielded from ambient light. Very low leakage can be achieved by using a diode-connected FET as shown. The 2N4117A 2N4117A is specified at 1pA and its metal case shields the junction from light. ­ VO D + D OPA627 OPA627 D: IN4148 IN4148 - 25nA Leakage 2N4117A 2N4117A - 1pA Leakage Siliconix Optional RS ­VS = (a) IIN ­ VO D D + OPA627 OPA627 D: 2N3904 2N3904 = (b) NC FIGURE 7. Input Protection Circuits. SMALL SIGNAL RESPONSE LARGE SIGNAL RESPONSE (A) (B) FPO When used as a unity-gain buffer, large common-mode input voltage steps produce transient variations in input-stage currents. This causes the rising edge to be slower and falling edges to be faster than nominal slew rates observed in higher-gain circuits. G=1 ­ + OPA627 OPA627 FIGURE 8. OPA627 OPA627 Dynamic Performance, G = +1. ® 11 OPA627 OPA627, 637 LARGE SIGNAL RESPONSE +10 0 VOUT (V) VOUT (V) +10 (C) ­10 0 (D) ­10 6pF(1) NOTE: (1) Optimum value will depend on circuit board layout and stray capacitance at the inverting input. When driven with a very fast input step (left), common-mode transients cause a slight variation in input stage currents which will reduce output slew rate. If the input step slew rate is reduced (right), output slew rate will increase slightly. 2k G = ­1 ­ 2k VOUT + OPA627 OPA627 FIGURE 9. OPA627 OPA627 Dynamic Performance, G = ­1. OPA637 OPA637 LARGE SIGNAL RESPONSE OPA637 OPA637 SMALL SIGNAL RESPONSE +100 0 VOUT (mV) VOUT (V) +10 (E) 0 (F) FPO ­100 ­10 4pF(1) 2k G=5 ­ + OPA637 OPA637 VOUT 500 NOTE: (1) Optimum value will depend on circuit board layout and capacitance at inverting input. FIGURE 10. OPA637 OPA637 Dynamic Response, G = 5. ® OPA627 OPA627, 637 12 Error Out / RI 2k OPA627 OPA627 CF HP50822835 HP50822835 2k OPA637 OPA637 2k 6pF ±0.5mV RI , R 1 CF Error Band (0.01%) 500 4pF ±0.2mV +15V RI High Quality Pulse Generator ­ 51 NOTE: CF is selected for best settling time performance depending on test fixture layout. Once optimum value is determined, a fixed capacitor may be used. ±5V Out + ­15V FIGURE 11. Settling Time and Slew Rate Test Circuit. ­In + ­ Gain = 100 CMRR 116dB Bandwidth 1MHz OPA637 OPA637 RF 5k 2 Input Common-Mode Range = ±5V RG 101 25k 25k INA105 INA105 Differential Amplifier 3pF ­ 3 ­ +In + RF 5k 5 Output 6 + 25k 25k 1 OPA637 OPA637 Differential Voltage Gain = 1 + 2RF /RG FIGURE 12. High Speed Instrumentation Amplifier, Gain = 100. ­In + ­ Gain = 1000 CMRR 116dB Bandwidth 400kHz OPA637 OPA637 RF 5k 2 Input Common-Mode Range = ±10V RG 101 10k 100k ­ INA106 INA106 Differential Amplifier 3pF 3 ­ +In + RF 5k 5 6 Output + 10k 100k 1 OPA637 OPA637 Differential Voltage Gain = (1 + 2RF /RG) · 10 FIGURE 13. High Speed Instrumentation Amplifier, Gain = 1000. This composite amplifier uses the OPA603 OPA603 current-feedback op amp to provide extended bandwidth and slew rate at high closed-loop gain. The feedback loop is closed around the composite amp, preserving the precision input characteristics of the OPA627/637 OPA627/637. Use separate power supply bypass capacitors for each op amp. R2 ­ A1 VI + *Minimize capacitance at this node. VO + ­ OPA603 OPA603 R1 R3 * RL 150 for ±10V Out R4 GAIN (V/V) A1 OP AMP R1 () R2 (k) R3 () R4 (k) ­3dB (MHz) SLEW RATE (V/µs) 100 1000 OPA627 OPA627 OPA637 OPA637 50.5(1) 49.9 4.99 4.99 20 12 1 1 15 11 700 500 NOTE: (1) Closest 1/2% value. FIGURE 14. Composite Amplifier for Wide Bandwidth. ® 13 OPA627 OPA627, 637 PACKAGE OPTION ADDENDUM www.ti.com 12-Sep-2006 PACKAGING INFORMATION Orderable Device Package Type Package Drawing OPA627AM OPA627AM NRND TO-99 LMC 8 20 Green (RoHS & no Sb/Br) AU N / A for Pkg Type OPA627AP OPA627AP ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA627APG4 OPA627APG4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA627AU OPA627AU ACTIVE SOIC D 8 100 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR OPA627AU/2K5 OPA627AU/2K5 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR OPA627AU/2K5E4 OPA627AU/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR OPA627AUE4 OPA627AUE4 ACTIVE SOIC D 8 100 Pb-Free (RoHS) CU NIPDAU Level-3-260C-168 HR OPA627BM OPA627BM NRND TO-99 LMC 8 20 Green (RoHS & no Sb/Br) AU N / A for Pkg Type OPA627BP OPA627BP ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA627BPG4 OPA627BPG4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA627SM OPA627SM NRND TO-99 LMC 8 20 Green (RoHS & no Sb/Br) AU N / A for Pkg Type OPA637AM OPA637AM NRND TO-99 LMC 8 20 Green (RoHS & no Sb/Br) AU N / A for Pkg Type OPA637AM2 OPA637AM2 OBSOLETE TO-99 LMC 8 TBD Call TI OPA637AP OPA637AP ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA637APG4 OPA637APG4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA637AU OPA637AU ACTIVE SOIC D 8 100 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR OPA637AU/2K5 OPA637AU/2K5 ACTIVE SOIC D 8 2500 Pb-Free (RoHS) CU NIPDAU Level-3-260C-168 HR OPA637AU/2K5E4 OPA637AU/2K5E4 ACTIVE SOIC D 8 2500 TBD Call TI OPA637AUE4 OPA637AUE4 ACTIVE SOIC D 8 100 Pb-Free (RoHS) CU NIPDAU Level-3-260C-168 HR OPA637AUG4 OPA637AUG4 ACTIVE SOIC D 8 100 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR OPA637BM OPA637BM NRND TO-99 LMC 8 20 Green (RoHS & no Sb/Br) AU OPA637BM1 OPA637BM1 OBSOLETE TO-99 LMC 8 TBD Call TI OPA637BP OPA637BP ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA637BPG4 OPA637BPG4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type OPA637SM OPA637SM (1) Status (1) Pins Package Eco Plan (2) Qty NRND TO-99 LMC 8 20 Green (RoHS & no Sb/Br) AU N / A for Pkg Type The marketing status values are defined as follows: Addendum-Page 1 Lead/Ball Finish MSL Peak Temp (3) Call TI Call TI N / A for Pkg Type Call TI PACKAGE OPTION ADDENDUM www.ti.com 12-Sep-2006 ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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